STM6960. Dual N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 Green Product SamHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Traistor PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max VGS=V V 5.5 VGS=4.5V FETURES Super high dee cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D 5 4 G D S SO-8 D D 7 8 G S BSOLUTE MXIMUM RTINGS (T =5 C unless otherwise noted) Symbol V DS V GS I D I DM P D T J, T STG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed b Maximum Power Dissipation a Operating Junction and Storage Temperature Range T =5 C Limit ± Units V V T =7 C 4.5 T =5 C T =7 C.8 W -55 to 5 W C THERML CHRCTERISTICS a R J Thermal Resistance, Junction-to-mbient.5 C/W Details are subject to change without notice. pr,7,

2 ELECTRICL CHRCTERISTICS (TC=5 C unless otherwise noted) Symbol Parameter Conditio Min Typ Max Units OFF CHRCTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=V,ID=5u V IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=V u IGSS Gate-Body leakage current VGS= ±V,VDS=V ± n ON CHRCTERISTICS VGS(th) Gate Threshold Voltage VDS=VGS,ID=5u.8 V VGS=V, ID= m ohm RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID= 55 7 m ohm g FS Forward Traconductance VDS=5V,ID=4.5 S DYNMIC CHRCTERISTICS CISS Input Capacitance pf VDS=5V,VGS=V COSS Output Capacitance 75 pf f=.mhz CRSS Reverse Trafer Capacitance 55 pf SWITCHING CHRCTERISTICS td(on) tr td(off) tf Qg Qgs Qgd Turn-On DelayTime Rise Time Turn-Off DelayTime Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c c VDD=V ID=4.5 VGS=V RGEN= ohm VDS=48V,ID=4.5,VGS=V VDS=48V,ID=4.5, VGS=V DRIN-SOURCE DIODE CHRCTERISTICS ND MXIMUM RTINGS VSD Diode Forward Voltage VGS=V,IS=.7.8. V Notes a.surface Mounted on FR4 Board,t < _ sec. b.pulse Test:Pulse Width < _ us, Duty Cycle < _ %. c.guaranteed by design, not subject to production testing. VDS=48V,ID=4.5,VGS=4.5V pr,7,

3 ID, Drain Current() VGS=4.5V -55 C 5 C VGS=V VGS=4V VGS=.5V VGS=V ID, Drain Current() 9 Tj=5 C VDS, Drain-to-Source Voltage(V) Figure. Output Characteristics VGS, Gate-to-Source Voltage(V) Figure. Trafer Characteristics 9. RDS(on)(m Ω) VGS=4.5V VGS=V RDS(on), On-Resistance Normalized V GS=V ID=4.5 V GS=4.5V ID= 9 5 Tj( C) ID, Drain Current() Tj, Junction Temperature( C ) Figure. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage VDS=VGS ID=5u BVDSS, Normalized Drain-Source Breakdown Voltage.5 ID=5u Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Tj, Junction Temperature( C ) Figure. Breakdown Voltage Variation with Temperature pr,7,

4 RDS(on)(m Ω) C 5 C 5 C ID= Is, Source-drain current() C 5 C 75 C VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current C, Capacitance(pF) 8 Ciss 4 Coss Crss VGS, Gate to Source Voltage(V) 8 4 VDS=48V ID= VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance Qg, Total Gate Charge() Figure. Gate Charge Switching Time() Tr Tf VDS =V,ID=4.5 VGS=V Rg, Gate Resistance(Ω) Figure. switching characteristics ID, Drain Current() 5 RDS(ON) Limit. VGS=V Single Pulse T=5 C.. DC VDS, Drain-Source Voltage(V) Figure. Maximum Safe Operating rea s ms ms 4 pr,7,

5 Normalized Traient Thermal Resistance t.. t. Single Pulse. R J (t)=r (t) * R J. R J=See Datasheet. TJM-T =PDM* R J (t) 4. Duty Cycle, D=t/t P DM Square Wave Pulse Duration(sec) Figure. Normalized Thermal Traient Impedance Curve pr,7, 5

6 PCKGE OUTLINE DIMENSIONS SO-8 D E e b H hx45 O L C SYMBOLS MILLIMETERS INCHES MIN MX MIN MX b C D E e.7 REF..5 BSC H L h pr,7,

7 SO-8 Carrier Tape SO-8 Tape and Reel Data P D P B E E E D P T TERMINL NUMBER SECTION - unit: PCKGE SOP 8N 5 K FEEDING DIRECTION B K D D E E E P P P T (MIN) SO-8 Reel W G S V M N K R H UNIT: TPE SIZE REEL SIZE W M N W W H K S G R V pr,7,