STU/D15L01. N-Channel Logic Level Enhancement Mode Field Effect Transistor

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1 Green Product STU/D5L SamHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max VGS=V V 5 VGS=4.5V FETURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-25 Package. Halogen free. G S STU SERIES TO - 252(D- PK ) G D S STD SERIES TO - 25( I - PK ) BSOLUTE MXIMUM RTINGS (T =25 C unless otherwise noted) Symbol V DS V GS I D I DM E S P D T J, T STG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c a c Single Pulse valanche Energy d Maximum Power Dissipation Operating Junction and Storage Temperature Range a T C =25 C T C =7 C T C =25 C T C =7 C Limit Units V ±2 V mj 5 W 32 W -55 to 5 C THERML CHRCTERISTICS R JC a Thermal Resistance, Junction-to-Case 3.6 C/W R J a Thermal Resistance, Junction-to-mbient 5 C/W Details are subject to change without notice.

2 STU/D5L ELECTRICL CHRCTERISTICS (T=25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHRCTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=V, ID=25u V IDSS Zero Gate Voltage Drain Current VDS=8V, VGS=V u IGSS Gate-Body Leakage Current VGS= ±2V, VDS=V ± n ON CHRCTERISTICS VGS(th) RDS(ON) g FS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VDS=VGS, ID=25u VGS=V, ID=6 VGS=4.5V, ID=5 VDS=V, ID= V 45 m ohm 5 95 m ohm 5 S b DYNMIC CHRCTERISTICS CISS Input Capacitance 48 pf VDS=25V,VGS=V COSS Output Capacitance 47 pf f=.mhz CRSS Reverse Transfer Capacitance 29 pf SWITCHING CHRCTERISTICS td(on) Turn-On Delay Time tr Rise Time td(off) tf Fall Time Qg Qgs Qgd Turn-Off Delay Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDD=5V ID= VGS=V RGEN= 6 ohm VDS=5V,ID=6,VGS=V VDS=5V,ID=6, VGS=V ns ns ns ns nc nc nc DRIN-SOURCE DIODE CHRCTERISTICS ND MXIMUM RTINGS VSD Diode Forward Voltage VGS=V,IS= V Notes a.surface Mounted on FR4 Board of inch 2, oz. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting TJ=25 C,L=.5mH,VDD = 5V.(See Figure3) 2

3 STU/D5L 5 VGS=V ID, Drain Current() VGS=8V VGS=7V VGS=6V VGS=5V ID, Drain Current() C Tj=25 C -55 C VDS, Drain-to-Source Voltage(V) Figure. Output Characteristics VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics RDS(on)(m Ω) V GS=V RDS(on), On-Resistance Normalized V GS=V ID= Tj( C ) ID, Drain Current() Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage V DS=V GS ID=25u 25 5 BVDSS, Normalized Drain-Source Breakdown Voltage ID=25u Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature 3

4 STU/D5L RDS(on)(m Ω) C ID=6 25 C 25 C Is, Source-drain current() C 25 C 25 C VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current C, Capacitance(pF) 9 75 Ciss Coss 5 Crss VGS, Gate to Source Voltage(V) VDS=5V ID= VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure. Gate Charge 3 8 Switching Time(ns) TD(on) VDS=5V,ID= VGS=V Rg, Gate Resistance(Ω) Tr Tf TD(off ) ID, Drain Current() R DS (ON) Limit VGS=V Single Pulse T=25 C.. VDS, Drain-Source Voltage(V) DC ms ms us Figure. switching characteristics Figure 2. Maximum Safe Operating rea 4

5 STU/D5L tp V(BR )DSS V DS L R G 2V tp D.U.T IS. + - V DD IS Unclamped Inductive Test Circuit Figure 3a. Unclamped Inductive Waveforms Figure 3b. 2 D=.5 Normalized Transient Thermal Resistance R J (t)=r (t) * R J 2. R J=S ee Datas heet SINGLE PULSE 3. T JM-T =PDM* R J (t) 4. Duty Cycle, D=t/t P DM t t2 Square Wave Pulse Duration(sec) Figure 4. Normalized Thermal Transient Impedance Curve 5

6 STU/D5L TO-252 E b3 E L3 D D H 2 3 L4 b e b2 L2 c L L c2 DETIL "" SYMBOLS b b2 b3 c c2 D D e E E H L L L2 L3 L4 MILLIMETERS MIN MX BSC REF.58 BSC DETIL "" 6

7 STU/D5L PCKGE OUTLINE DIMENSIONS TO-25 E b3 c2 D E D H 2 3 b2 L4 L5 b L e b4 c SYMBOL MILLIMETERS MIN MX E L L4.698 REF L D H b b b b e BSC c.4.6 c2 D E

8 STU/D5L TO-25 Tube TO-25 Tube/TO-252 Tape and Reel Data ~ " " TO-252 Carrier Tape P T D P2 E B E2 K D P FEED DIRECTION UNIT: PCKGE TO-252 (6 B K D D E E E2 P P P2 T TO-252 Reel T M N E S G K V R H W UNIT: TPE SIZE 6 REEL SIZE 33 M N W T H K S G R V

9 STU/D5L TOP MRKING DEFINITION TO-252 SamHop Logo STU5L XXXXXX Product No. SMC internal code No. (,B,C...Z) Wafer Lot No. Production Date (,2 ~ 9,,B...) Production Month (,2 ~ 9,,B,C) Production Year (29 = 9, 2 =...) 9

10 STU/D5L TOP MRKING DEFINITION TO-25 SamHop Logo STD5L XXXXXX Product No. SMC internal code No. (,B,C...Z) Wafer Lot No. Production Date (,2 ~ 9,,B...) Production Month (,2 ~ 9,,B,C) Production Year (29 = 9, 2 =...)

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