CEM6407. Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted
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1 Dual P-Channel Enhancement Mode Field Effect Traistor PRELIMINRY FETURES -, -5., R DS(ON) = GS = -. R DS(ON) = GS = -.5. Super high dee cell design for extremely low R DS(ON). High power and current handing capability. RoHS compliant. Surface mount Package. D D D D 7 5 SO- 3 S G S G BSOLUTE MXIMUM RTINGS T = 5 C unless otherwise noted Parameter Symbol Limit Units Drain-Source oltage DS - Gate-Source oltage GS -5 Drain Current-Continuous Drain Current-Pulsed a I D I DM Maximum Power Dissipation P D W Operating and Store Temperature Range TJ,Tstg -55 to 5 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-mbient b RθJ.5 C/W This is preliminary information on a new product in development now. Details are subject to change without notice. Rev..Jan
2 Electrical Characteristics T = 5 C unless otherwise noted Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) C iss C oss C rss I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < sec. c.pulse Test : Pulse Width < 3µs, Duty Cycle < %. d.guaranteed by design, not subject to production testing. GS =, I D = -5µ DS = -, GS = GS =, DS = GS = -5, DS = GS = DS, I D = -5µ GS = -, I D = - GS = -.5, I D = - DS = -5, GS =, f =. MHz DD = -, I D = -, GS = -, R GEN = Ω DS = -, I D = -, GS = - GS =, I S = µ n n mω 5 mω
3 -ID, Drain Current () - GS =,,, - GS =3 -ID, Drain Current () T J =5 C 5 C -55 C DS, Drain-to-Source oltage () Figure. Output Characteristics 3 5 -GS, Gate-to-Source oltage () Figure. Trafer Characteristics C, Capacitance () 5 C iss 9 3 C oss C rss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =- GS = DS, Drain-to-Source oltage () Figure 3. Capacitance TJ, Junction Temperature( C) Figure. On-Resistance ariation with Temperature TH, Normalized Gate-Source Threshold oltage DS = GS I D =-5µ IS, Source-drain current () GS = TJ, Junction Temperature( C) -SD, Body Diode Forward oltage () Figure 5. Gate Threshold ariation with Temperature Figure. Body Diode Forward oltage ariation with Source Current 3
4 -GS, Gate to Source oltage () DS =- I D =- 7 Qg, Total Gate Charge () -ID, Drain Current () R DS(ON) Limit ms ms s DC - T =5 C T J =5 C - Single Pulse - - -DS, Drain-Source oltage () BDSS,Normalized Drain-Source Breakdown oltage Figure 7. Gate Charge Figure. Maximum Safe Operating rea Tj, Junction Temperature ( C) Figure 9. Breakdown oltage ariation S Temperature DD GS RGEN IN G D RL OUT td(on) OUT ton toff tr td(off) 9% 9% % INERTED % tf S IN % 9% 5% 5% PULSE WIDTH Figure. Switching Test Circuit Figure. Switching Waveforms
5 r(t),normalized Effective Traient Thermal Impedance D=.5. - PDM. t.5 t. R J (t)=r (t) * R J.. R J=See Datasheet 3. TJM-T = P* R J (t) Single Pulse -. Duty Cycle, D=t/t Square Wave Pulse Duration (sec) Figure. Normalized Thermal Traient Impedance Curve 5
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PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI RoHS compliant High frequency operation Applications
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Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
More informationPNMT50V02E N-Channel MOSFET
N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 5 @V GS =V.22 D (3)
More informationTHERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc 6 C / W Junction-to-Ambient R θja 42 C / W STATIC
N- & annel Enhancement Mode P3ND5G PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 3 mω 5A annel -3 36mΩ -9A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 5 C Unless
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TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationElectrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
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More informationParameter Symbol Limit Unit IDM 20 A T A = PD T A =100
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800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent
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