CEM3138. Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted
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1 Dual N-Channel Enhancement Mode Field Effect Traistor CEM8 FETURES, 9., R DS(ON) = GS =. R DS(ON) = GS = 4.., 6.9, R DS(ON) = GS =. R DS(ON) = GS = 4.. Super high dee cell design for extremely low R DS(ON). High power and current handing capability. D D D2 D Lead free product is acquired. Surface mount Package. SO S G S2 G2 BSOLUTE MXIMUM RTINGS T = 2 C unless otherwise noted Parameter Symbol Channel Channel 2 Units Drain-Source oltage Gate-Source oltage Drain Current-Continuous Drain Current-Pulsed a DS GS I D I DM ± ± Maximum Power Dissipation P D 2. W Operating and Store Temperature Range TJ,Tstg - to C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-mbient b RθJ 62. C/W Details are subject to change without notice. Rev Nov
2 N-Channel(Q) Electrical Characteristics T = 2 C unless otherwise noted CEM8 Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Forward Traconductance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) g FS I S SD GS =, I D = 2µ DS = 24, GS = GS = 2, DS = GS = -2, DS = GS = DS, I D = 2µ GS =, I D = 8.6 GS = 4., I D = 7. DS =, I D = 8.6 DS =, GS =, f =. MHz DD =, I D =, GS =, R GEN = 6Ω DS =, I D = 2, GS = GS =, I S = 2 - µ mω 7 2 mω S Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR4 Board, t < sec. c.pulse Test : Pulse Width < µs, Duty Cycle < 2%. d.guaranteed by design, not subject to production testing. 2
3 N-Channel(Q2) Electrical Characteristics T = 2 C unless otherwise noted CEM8 Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Forward Traconductance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) g FS I S SD GS =, I D = 2µ DS = 24, GS = GS = 2, DS = GS = -2, DS = GS = DS, I D = 2µ GS =, I D = 6. GS = 4., I D =.6 DS =, I D = 6. DS =, GS =, f =. MHz DD =, I D =, GS =, R GEN = 6Ω DS =, I D = 2, GS = GS =, I S = µ mω 27 mω S Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR4 Board, t < sec. c.pulse Test : Pulse Width < µs, Duty Cycle < 2%. d.guaranteed by design, not subject to production testing.
4 CEM8 CHNNEL GS =,6,,4. GS = C 4 2 GS =. GS =. 2 T J =2 C - C DS, Drain-to-Source oltage () Figure. Output Characteristics GS, Gate-to-Source oltage () Figure 2. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =8.6 GS = DS, Drain-to-Source oltage () Figure. Capacitance Figure 4. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =2µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure 6. Body Diode Forward oltage ariation with Source Current 4
5 CEM8 CHNNEL GS =,6,4. GS =4. GS =. GS =. GS = C 2 T J =2 C - C DS, Drain-to-Source oltage () GS, Gate-to-Source oltage () Figure 7. Output Characteristics Figure 8. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =6. GS = DS, Drain-to-Source oltage () Figure 9. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =2µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure 2. Body Diode Forward oltage ariation with Source Current
6 CEM8 CHNNEL GS, Gate to Source oltage () 4 2 DS = I D = R DS(ON) Limit DC - T =2 C T J = C -2 Single Pulse -2-2 s ms ms ms Qg, Total Gate Charge () DS, Drain-Source oltage () CHNNEL 2 GS, Gate to Source oltage () 4 2 DS = I D =2 Figure. Gate Charge Figure 4. Maximum Safe Operating rea R DS(ON) Limit ms ms ms s DC - T =2 C T J = C -2 Single Pulse -2-2 Qg, Total Gate Charge () DS, Drain-Source oltage () Figure. Gate Charge Figure 6. Maximum Safe Operating rea 6
7 CEM8 DD GS RGEN IN G D RL OUT td(on) OUT ton toff tr td(off) 9% 9% % INERTED % tf S IN % 9% % % PULSE WIDTH Figure 7. Switching Test Circuit Figure 8. Switching Waveforms r(t),normalized Effective Traient Thermal Impedance - -2 D= Single Pulse PDM t t2. R J (t)=r (t) * R J 2. R J=See Datasheet. TJM-T = P* R J (t) 4. Duty Cycle, D=t/t Square Wave Pulse Duration (sec) Figure 9. Normalized Thermal Traient Impedance Curve 7
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N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted
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N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 5 @V GS =V.22 D (3)
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PRODUCT SUMMARY (TYPICAL) V DS (V) 650 R DS(on) (m ) 35 Q rr (nc) 175 Features Low Q rr Free-wheeling diode not required Quiet Tab for reduced EMI at high dv/dt GSD pin layout improves high speed design
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TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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STP60NF06 STP60NF06FP N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP60NF06 STP60NF06FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60A 60A TYPICAL R DS (on) = 0.014Ω EXCEPTIONAL
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AON73 V PChannel MOSFET General Description The AON73 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
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N- & annel Enhancement Mode P8NDG TO-- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel V 8mΩ A annel -V 8mΩ -A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = C Unless
More informationElectrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol
N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38
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Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
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N- & annel Enhancement Mode P3ND5G PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 3 mω 5A annel -3 36mΩ -9A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 5 C Unless
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3V PChannel EnhancementMode MOSFET LP347LT1G V DS 3V I D (V GS = V) 4.1A R DS(ON) (V GS = V) < 7mΩ R DS(ON) (V GS = 4.5V) < m Ω 1 3 2 FEATURES The LP347LT1G uses advanced trench technology to provide excellent
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N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
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PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI GSD pin layout improves high speed design RoHS
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Description The is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
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