CEM2939 FEATURES. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted. Thermal Characteristics
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1 Dual Enhancement Mode Field Effect Traistor (N and P Channel) CEM299 FETURES 2, 6., R DS(ON) = GS =.. R DS(ON) = GS = , -.8, R DS(ON) = GS = -.. R DS(ON) = GS = -2.. Super high dee cell design for extremely low R DS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D D D2 D SO-8 2 S G S2 G2 BSOLUTE MXIMUM RTINGS T = 2 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source oltage Gate-Source oltage Drain Current-Continuous Drain Current-Pulsed a DS GS I D I DM 2 ± ± Maximum Power Dissipation P D 2. W Operating and Store Temperature Range TJ,Tstg - to C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-mbient b RθJ 62. C/W Specification and data are subject to change without notice. Rev. 2.Jan
2 N-Channel Electrical Characteristics T = 2 C unless otherwise noted Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Traconductance Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) g FS I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < sec. c.pulse Test : Pulse Width < µs, Duty Cycle < 2%. d.guaranteed by design, not subject to production testing. GS =, I D = 2µ DS = 6, GS = GS = 2, DS = GS = -2, DS = GS = DS, I D = 2µ GS =., I D = 6. GS = 2., I D =. DS =, I D = 6. DS = 8, GS =, f =. MHz DD =, I D =, GS =., R GEN =6Ω DS =, I D =6., GS =. GS =, I S =. CEM µ n n mω mω S 2
3 P-Channel Electrical Characteristics T = 2 C unless otherwise noted Off Characteristics CEM299 Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Traconductance Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) g FS I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < sec. c.pulse Test : Pulse Width < µs, Duty Cycle < 2%. d.guaranteed by design, not subject to production testing. GS =, I D = -2µ DS = -6, GS = GS = 2, DS = GS = -2, DS = GS = DS, I D = -2µ GS = -., I D = -.2 GS = -2., I D = -. DS = -, I D = -. DS = -, GS =, f =. MHz DD = -, I D = -, GS = -., R GEN = Ω DS = -, I D = -, GS = -. GS =, I S = µ n n mω 6 9 mω S
4 CEM299 N-CHNNEL ID, Drain Current () GS =.,.,.,2. GS =2. ID, Drain Current () T J =2 C 2 C - C DS, Drain-to-Source oltage () Figure. Output Characteristics GS, Gate-to-Source oltage () Figure 2. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =6. GS = DS, Drain-to-Source oltage () Figure. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =2µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure 6. Body Diode Forward oltage ariation with Source Current
5 CEM299 P-CHNNEL -ID, Drain Current () - GS =.,-., GS =2. - GS =2 -ID, Drain Current () T J =2 C 2 C - C DS, Drain-to-Source oltage () Figure 7. Output Characteristics 2 -GS, Gate-to-Source oltage () Figure 8. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =-.2 GS = DS, Drain-to-Source oltage () Figure 9. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =-2µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure 2. Body Diode Forward oltage ariation with Source Current
6 N-CHNNEL GS, Gate to Source oltage () P-CHNNEL -GS, Gate to Source oltage () 2 DS =- 2 DS = I D = I D =- Qg, Total Gate Charge () Figure. Gate Charge Qg, Total Gate Charge () Figure. Gate Charge ID, Drain Current () -ID, Drain Current () 2 2 R DS(ON) Limit CEM299 - T =2 C T J = C -2 Single Pulse -2-2 DS, Drain-Source oltage () Figure. Maximum Safe Operating rea R DS(ON) Limit ms - T =2 C T J = C -2 Single Pulse -2-2 s DC s DC ms ms ms -DS, Drain-Source oltage () Figure 6. Maximum Safe Operating rea 6
7 CEM299 DD GS RGEN IN G D RL OUT td(on) OUT ton toff tr td(off) 9% 9% % INERTED % tf S IN % 9% % % PULSE WIDTH Figure 7. Switching Test Circuit Figure 8. Switching Waveforms r(t),normalized Effective Traient Thermal Impedance - -2 D= Single Pulse PDM t t2. R J (t)=r (t) * R J 2. R J=See Datasheet. TJM-T = P* R J (t). Duty Cycle, D=t/t Square Wave Pulse Duration (sec) Figure 9. Normalized Thermal Traient Impedance Curve 7
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DS = 30 R DS(ON), gs @10, I ds @8.5A = 38mΩ R DS(ON), gs @4.5, I ds @5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling
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