CEC2609 FEATURES. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted. Thermal Characteristics

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1 Dual Enhancement Mode Field Effect Traistor (N and P Channel) PRELIMINRY FETURES,.8, R DS(ON) = GS =.5. R DS(ON) = GS =.5. -, -3., R DS(ON) = GS = -.5. R DS(ON) = GS = -.5. Super high dee cell design for extremely low R DS(ON). High power and current handing capability. RoHS compliant. D() D(3) S G D G() G(5) D G S S() S() DFN* BSOLUTE MXIMUM RTINGS T = 5 C unless otherwise noted Drain-Source oltage Gate-Source oltage Drain Current-Continuous Parameter Symbol N-Channel P-Channel Units DS GS I = 5 C ±.8 - ± -3. I = 7 C Drain Current-Pulsed a I DM 9. - Maximum Power Dissipation P D.3 W Operating and Store Temperature Range TJ,Tstg -55 to 5 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case b RθJc 3 Thermal Resistance, Junction-to-mbient b RθJ 95 C/W C/W This is preliminary information on a new product in development now. Details are subject to change without notice. Rev. 7.Feb

2 N-Channel Electrical Characteristics T = 5 C unless otherwise noted Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < sec. c.pulse Test : Pulse Width < 3µs, Duty Cycle < %. d.guaranteed by design, not subject to production testing. GS =, I D = 5µ DS =, GS = GS =, DS = GS = -, DS = GS = DS, I D = 5µ GS =.5, I D = 3.5 GS =.5, I D =. DS =, GS =, f =. MHz DD =, I D = 3.5, GS =.5, R GEN = Ω DS =, I D = 3.5, GS = 3.3 GS =, I S = µ n n mω mω

3 P-CHNNEL Electrical Characteristics T = 5 C unless otherwise noted Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < 5 sec. c.pulse Test : Pulse Width < 3µs, Duty Cycle < %. d.guaranteed by design, not subject to production testing. GS =, I D = -5µ DS = -, GS = GS =, DS = GS = -, DS = GS = DS, I D = -5µ GS = -.5, I D = -.5 GS = -.5, I D = -.5 DS = -, GS =, f =. MHz DD = -, I D = -.5, GS = -.5, R GEN = 3Ω DS = -, I D = -., GS = -3.3 GS =, I S = µ n n 78 mω 5 mω

4 N-CHNNEL ID, Drain Current () 8 GS =.5,3.5,.5 GS =. GS =.5 3 ID, Drain Current () 5 C 8 T J =5 C -55 C DS, Drain-to-Source oltage () Figure. Output Characteristics GS, Gate-to-Source oltage () Figure. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =3.5 GS = DS, Drain-to-Source oltage () Figure 3. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =5µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure 5. Gate Threshold ariation Figure. Body Diode Forward oltage ariation with Source Current

5 P-CHNNEL -ID, Drain Current () 8 - GS =.5,3.5,.5 - GS = DS, Drain-to-Source oltage () Figure 7. Output Characteristics -ID, Drain Current () 5 5 C 3 T J =5 C -55 C GS, Gate-to-Source oltage () Figure 8. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =-.5 GS = DS, Drain-to-Source oltage () Figure 9. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =-5µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure. Body Diode Forward oltage ariation with Source Current 5

6 N-CHNNEL GS, Gate to Source oltage () DS = I D = Qg, Total Gate Charge () ID, Drain Current () - - R DS(ON) Limit T =5 C T J =5 C Single Pulse ms ms ms s DC - DS, Drain-Source oltage () P-CHNNEL -GS, Gate to Source oltage () DS =- I D =-. Figure 3. Gate Charge ID, Drain Current () Figure. Maximum Safe Operating rea R DS(ON) Limit T =5 C T J =5 C Single Pulse ms ms ms s DC Qg, Total Gate Charge () -DS, Drain-Source oltage () Figure 5. Gate Charge Figure. Maximum Safe Operating rea

7 DD GS RGEN IN G D RL OUT td(on) OUT ton toff tr td(off) 9% 9% % INERTED % tf S IN % 9% 5% 5% PULSE WIDTH Figure 7. Switching Test Circuit Figure 8. Switching Waveforms r(t),normalized Effective Traient Thermal Impedance D= Single Pulse PDM t t. R J (t)=r (t) * R J. R J=See Datasheet 3. TJM-T = P* R J (t). Duty Cycle, D=t/t Square Wave Pulse Duration (sec) Figure 9. Normalized Thermal Traient Impedance Curve 7