V DS V GS -5.2 I D T A =70 C A Drain Current-Pulsed a I DM 2.0 P D T A =70 C 1.28

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1 Dual Enhancement Mode Field Effect Traistor (N and P Channel) CEM29 FEATURES,.1A, R DS(ON) = GS = 1. R DS(ON) = GS =.5. -, -5.2A, R DS(ON) = GS = 1. R DS(ON) = GS =.5. Super high dee cell design for extremely low R DS(ON). High power and current handing capability. D1 D1 D2 D2 7 5 Lead free product is acquired. Surface mount Package. SO S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted Parameter Symbol Channel 1 Channel 2 Units Drain-Source oltage Gate-Source oltage DS GS ±2 - ±2 Drain Current-Continuous I D T A =7 C A Drain Current-Pulsed a I DM 2-2 Maximum Power Dissipation 2. P D T A =7 C 1.2 W Operating and Store Temperature Range T J,T stg -55 to 15 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b RθJA 2.5 C/W Specification and data are subject to change without notice. 1 Rev Aug

2 N-Channel Electrical Characteristics T A = 25 C unless otherwise noted Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Forward Traconductance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) g FS I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < 1 sec. c.pulse Test : Pulse Width < 3µs, Duty Cycle < 2%. d.guaranteed by design, not subject to production testing. GS =, I D = 25µA DS =, GS = GS = 2, DS = GS = -2, DS = GS = DS, I D = 25µA GS = 1, I D = A GS =.5, I D = 5A DS = 5, I D = A DS = 2, GS =, f = 1. MHz DD = 2, I D = A, GS = 1, R GEN =3Ω DS = 2, I D = A, GS = 1 GS =, I S = 1.A CEM µa mω mω S A 2

3 P-Channel Electrical Characteristics T A = 25 C unless otherwise noted Off Characteristics CEM29 Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Forward Traconductance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) g FS I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < 1 sec. c.pulse Test : Pulse Width < 3µs, Duty Cycle < 2%. d.guaranteed by design, not subject to production testing. GS =, I D = -25µA DS = -, GS = GS = 2, DS = GS = -2, DS = GS = DS, I D = -25µA GS = -1, I D = -5A GS = -.5, I D = -2A DS = -5, I D = -.A DS = -2, GS =, f = 1. MHz DD = -2, I D = -5A, GS = -1, R GEN = 3Ω DS = -2, I D = -5A, GS = -1 GS =, I S = -1.A µa mω 5 mω S A 3

4 CEM29 N-CHANNEL 3 GS =1,5 GS =.5 2 ID, Drain Current (A) 2 1 GS =. GS =3.5 ID, Drain Current (A) 1 T J =5 C 25 C -55 C DS, Drain-to-Source oltage () Figure 1. Output Characteristics GS, Gate-to-Source oltage () Figure 2. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =A GS = DS, Drain-to-Source oltage () Figure 3. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =25µA IS, Source-drain current (A) GS = SD, Body Diode Forward oltage () Figure 5. Gate Threshold ariation Figure. Body Diode Forward oltage ariation with Source Current

5 CEM29 P-CHANNEL 3 - GS =1,,5 - GS = ID, Drain Current (A) GS =. - GS =3.5 - GS =3. -ID, Drain Current (A) T J =5 C 25 C -55 C DS, Drain-to-Source oltage () -GS, Gate-to-Source oltage () Figure 7. Output Characteristics Figure. Trafer Characteristics C, Capacitance () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =-5A GS = DS, Drain-to-Source oltage () Figure 9. Capacitance Figure 1. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =-25µA IS, Source-drain current (A) GS = SD, Body Diode Forward oltage () Figure 11. Gate Threshold ariation Figure. Body Diode Forward oltage ariation with Source Current 5

6 N-CHANNEL GS, Gate to Source oltage () Qg, Total Gate Charge () Figure 13. Gate Charge P-CHANNEL -GS, Gate to Source oltage () 1 DS =2 I D =A DS =-2 I D =-5A Qg, Total Gate Charge () Figure 15. Gate Charge ID, Drain Current (A) -ID, Drain Current (A) R DS(ON) Limit CEM29 DC 1ms 1ms 1ms 1s 1-1 T J =15 C 1-2 Single Pulse DS, Drain-Source oltage () Figure 1. Maximum Safe Operating Area R DS(ON) Limit DC 1ms 1ms 1ms 1-1 T J =15 C 1-2 Single Pulse DS, Drain-Source oltage () Figure 1. Maximum Safe Operating Area

7 CEM29 DD ton toff GS RGEN IN G D RL OUT td(on) OUT tr td(off) 9% 9% 1% INERTED 1% tf 9% S IN 1% 5% 5% PULSE WIDTH Figure 17. Switching Test Circuit Figure 1. Switching Waveforms 1 r(t),normalized Effective Traient Thermal Impedance D= Single Pulse PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t). Duty Cycle, D=t1/t Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Traient Impedance Curve 7