CEM3109 FEATURES. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted. Thermal Characteristics

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1 Dual Enhancement Mode Field Effect Traistor (N and P Channel) CEM9 FETURES,, R DS(ON) = GS =. R DS(ON) = GS =.. -, -8, R DS(ON) = GS = -. R DS(ON) = GS = -.. Super high dee cell design for extremely low R DS(ON). High power and current handing capability. D D D D 8 7 Lead-free plating ; RoHS compliant. Surface mount Package. SO-8 S G S G BSOLUTE MXIMUM RTINGS T = C unless otherwise noted Drain-Source oltage Gate-Source oltage Parameter Symbol Channel Channel Units Drain Current-Continuous@T = C Drain Current-Pulsed = 7 C DS GS I D I DM ± - ± Maximum Power Dissipation P D. W Operating and Store Temperature Range TJ,Tstg - to C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-mbient b RθJ. C/W Details are subject to change without notice. Rev..Sep

2 N-Channel(Q) Electrical Characteristics T = C unless otherwise noted Off Characteristics CEM9 Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics c B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward oltage b GS(th) R DS(on) I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.pulse Test : Pulse Width < µs, Duty Cycle < %. c.guaranteed by design, not subject to production testing. GS =, I D = µ DS =, GS = GS =, DS = GS = -, DS = GS = DS, I D = µ GS =, I D = 9 GS =., I D = DS =, GS =, f =. MHz DD =, I D =, GS =, R GEN = Ω DS =, I D = 9, GS =. GS =, I S = µ n n mω 8 mω

3 P-Channel Electrical Characteristics T = C unless otherwise noted Off Characteristics CEM9 Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics c B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward oltage b GS(th) R DS(on) I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.pulse Test : Pulse Width < µs, Duty Cycle < %. c.guaranteed by design, not subject to production testing. GS =, I D = -µ DS = -, GS = GS =, DS = GS = -, DS = GS = DS, I D = -µ GS = -, I D = -8 GS = -., I D = - DS = -, GS =, f =. MHz DD = -, I D = -, GS = -, R GEN = Ω DS = -, I D = -8, GS = -. GS =, I S = µ n n mω mω

4 N-CHNNEL CEM9 ID, Drain Current () 8 GS =,8, GS = ID, Drain Current () 8 T J = C C - C DS, Drain-to-Source oltage () Figure. Output Characteristics GS, Gate-to-Source oltage () Figure. Trafer Characteristics C, Capacitance () 8 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =9 GS =. - - DS, Drain-to-Source oltage () Figure. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure. Body Diode Forward oltage ariation with Source Current

5 P-CHNNEL CEM9 -ID, Drain Current () 8 - GS =,8, - GS = -ID, Drain Current () 9 T J = C C - C DS, Drain-to-Source oltage () Figure 7. Output Characteristics -GS, Gate-to-Source oltage () Figure 8. Trafer Characteristics C, Capacitance () 8 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =-8 GS = DS, Drain-to-Source oltage () Figure 9. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =-µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure. Body Diode Forward oltage ariation with Source Current

6 N-CHNNEL GS, Gate to Source oltage () P-CHNNEL -GS, Gate to Source oltage () BDSS,Normalized Drain-Source Breakdown oltage 8... DS = I D =9 DS =- I D =-8 Qg, Total Gate Charge () Figure. Gate Charge.9 Qg, Total Gate Charge () Figure. Gate Charge.8 - Tj, Junction Temperature ( C) Figure 7. Breakdown oltage ariation S Temperature ID, Drain Current () -ID, Drain Current () R DS(ON) Limit CEM9 DC ms ms - T = C T J = C - Single Pulse - - s DS, Drain-Source oltage () Figure. Maximum Safe Operating rea R DS(ON) Limit DC ms ms s - T = C T J = C - Single Pulse - - -DS, Drain-Source oltage () Figure. Maximum Safe Operating rea

7 CEM9 DD GS RGEN IN G D RL OUT td(on) OUT ton toff tr td(off) 9% 9% % INERTED % tf S IN % 9% % % PULSE WIDTH Figure 8. Switching Test Circuit Figure 9. Switching Waveforms r(t),normalized Effective Traient Thermal Impedance - D=..... Single Pulse - - PDM t t. R J (t)=r (t) * R J. R J=See Datasheet. TJM-T = P* R J (t). Duty Cycle, D=t/t Square Wave Pulse Duration (sec) Figure. Normalized Thermal Traient Impedance Curve 7