ACE2302 N-Channel Enhancement Mode MOSFET

Transcription

1 Description The is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features 20V/3.6A, RDS(ON)=80mΩ@V GS =4.5V 20V/3.1A, RDS(ON)=95mΩ@V GS =2.5V Super high density cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±20 V T A = Continuous Drain Current (T J =150 ) TA =70 I D 2.6 A Pulsed Drain Current I DM 10 A Continuous Source Current (Diode Conduction) I S 1.6 A Power Dissipation T A = T A =70 P D 0.8 W Operating Junction Temperature T J 150 O C Storage Temperature Range T STG -55/150 O C Thermal Resistance-Junction to Ambient R θja 100 O C/W VER 1.2 1

2 Packaging Type SOT Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Ordering information Selection Guide XX + H Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics T A =25, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown V (BR)DSS V GS =0V, I D =250 ua 20 Voltage V Gate Threshold Voltage V GS(th) V D =VGS, I D =250uA Gate Leakage Current I GSS V DS =0V,V GS =±12V ±100 na Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance I DSS I D(ON) R DS(ON) V DS =20V, V GS =0V 1 V DS =24V, V GS =0V T J =55 10 ua VDS 5V, V GS =4.5V 6 VDS 5V, V GS =2.5V 4 A V GS =4.5V, I D =3.6A V GS =2.5V, I D =3.1A Ω Forward Transconductance gfs V DS =5V,I D =3.6A 10 S VER 1.2 2

3 Diode Forward Voltage V SD I S =1.6A, V GS =0V V Dynamic Total Gate Charge Q g Gate-Source Charge Q gs V DS =10V, V GS =4.5V, I D =3.6A 0.65 nc Gate-Drain Charge Q gd Input Capacitance Ciss 340 Output Capacitance Coss 115 V DS =10V, V GS =0V, f=1mhz pf Reverse Transfer Crss 33 Capacitance td(on) Turn-On Time tr V DD =10V, R L =5.5Ω, I D =3.6A, V GEN =4.5V, ns td(off) R G =6Ω Turn-Off Time tf Typical Performance Characteristics 1.4 Output Characteristics Transfer Characteristics V DS -Drain-to-Source Voltage (V) V GS -Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance I D -Drain Current (A) V DS -Drain-to-Source Voltage (V) VER 1.2 3

4 Gate Charge On-Resistance vs. Junction Temperature Q g -Total Gate Charge (nc) T J -Junction Temperature ( ) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage V SD -Source-to-Drain Voltage (V) V GS -Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power T J -Temperature( ) Time (sec) VER 1.2 4

5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VER 1.2 5

6 Packing Information SOT-23-3 VER 1.2 6

7 Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Co., LTD. VER 1.2 7

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