Schematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply

Size: px
Start display at page:

Download "Schematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply"

Transcription

1 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 85H21 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features V DSS =85V,I D =210A(Note5) Schematic diagram R DS(ON) < V GS =10V Good stability and uniformity with high E AS Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation Application Automotive applications Hard switched and high frequency circuits Marking and pin assignment Uninterruptible power supply TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 85H21 FNK85H21 TO Absolute Maximum Ratings (T C =25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 85 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous I D 210(Note5) A Drain Current-Continuous(T C =100 ) I D (100 ) 150 A Pulsed Drain Current I DM 850 A Maximum Power Dissipation P D 310 W Derating factor 2.07 W/ Page 1

2 Single pulse avalanche energy (Note 3) E AS 2200 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 5 V/ns Operating Junction and Storage Temperature Range T J,T STG -55 To 175 Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 1) R θjc 0.48 /W Electrical Characteristics (T C =25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA V Zero Gate Voltage Drain Current I DSS V DS =85V,V GS =0V μa Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±200 na On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA V Drain-Source On-State Resistance 25 R DS(ON) V GS =10V, I D =40A mω mω Forward Transconductance g FS V DS =25V,I D =40A S Dynamic Characteristics Input Capacitance C lss PF V DS =25V,V GS =0V, Output Capacitance C oss PF F=1.0MHz Reverse Transfer Capacitance PF Switching Characteristics C rss Turn-on Delay Time t d(on) ns V DD =38V,I D =40A Turn-on Rise Time t r ns V GS =10V,R GEN =1.2Ω Turn-Off Delay Time t d(off) (Note2) ns Turn-Off Fall Time ns t f Total Gate Charge Q g V DS =60V,I D =40A, nc Gate-Source Charge Q gs V GS =10V(Note2) nc Gate-Drain Charge nc Q gd Drain-Source Diode Characteristics Diode Forward Voltage V SD V GS =0V,I S =40A V Reverse Recovery Time t rr TJ = 25 C, IF = 40A ns Reverse Recovery Charge Qrr di/dt = 100A/μs(Note2) nc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Surface Mounted on FR4 Board, t 10 sec. 2. Pulse Test: Pulse Width 400μs, Duty Cycle 2%. 3. EAS condition:tj=25,v DD =42.5V,V G =10V,L=0.5mH,Rg=25Ω,I AS =37A 4. ISD 125A, di/dt 260A/μs, VDD V(BR)DSS,TJ 175 C 5.Package limitation current is 190A. Page 2

3 Test Circuit 1)E AS test Circuit 2)Gate charge test Circuit 3)Switch Time Test Circuit Page 3

4 Typical Electrical and Thermal Characteristics Rdson On-Resistance(Ω) ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics Normalized On-Resistance Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) T J -Junction Temperature( ) Figure 4 Rdson-JunctionTemperature Qg Gate Charge (nc) Figure 5 Gate Charge I D - Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Page 4

5 Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds T J -Junction Temperature( ) Figure 9 BV DSS vs Junction Temperature ID- Drain Current (A) C Capacitance (pf) Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area T J -Junction Temperature( ) Figure 10 V GS(th) vs Junction Temperature r(t),normalized Effective Transient Thermal Impedance Vth, ( V ) Normalized BVdss Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Page 5

6 TO-220-3L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A b b c c D E E e TYP TYP. e F H h L L V REF REF. Φ Page 6

FNK N-Channel Enhancement Mode Power MOSFET

FNK N-Channel Enhancement Mode Power MOSFET FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 80H11 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of

More information

Device Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE85H21T NCE85H21T TO Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCE85H21T NCE85H21T TO Parameter Symbol Limit Unit NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in Automotive applications and

More information

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching

More information

Parameter Symbol Limit Unit

Parameter Symbol Limit Unit N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Taiwan Goodark Technology Co.,Ltd TGD01P30

Taiwan Goodark Technology Co.,Ltd TGD01P30 TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

PE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)

PE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted) N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.

More information

Electrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol

Electrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity

Device Marking Device Device Package Reel Size Tape width Quantity N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent DS(ON) with low gate charge. It can be used in a wide variety of applications. General

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE3080K NCE3080K TO-252-2L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCE3080K NCE3080K TO-252-2L Parameter Symbol Limit Unit http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE30H21 NCE30H21 TO Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCE30H21 NCE30H21 TO Parameter Symbol Limit Unit NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

NCE0250D. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE0250D. NCE N-Channel Enhancement Mode Power MOSFET.  Description. General Features. Application http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

NCE7190. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE7190. NCE N-Channel Enhancement Mode Power MOSFET.  Description. General Features. Application http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE3090 NCE3090 TO-220-3L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCE3090 NCE3090 TO-220-3L Parameter Symbol Limit Unit http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Device Marking Device Device Package Reel Size Tape width Quantity HM60N08 HM60N08 TO-220-3L - - Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity HM60N08 HM60N08 TO-220-3L - - Parameter Symbol Limit Unit N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE30P50G NCE30P50G DFN 5x6 EP - - -

Device Marking Device Device Package Reel Size Tape width Quantity NCE30P50G NCE30P50G DFN 5x6 EP - - - http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE6990 NCE6990 TO unless otherwise noted)

Device Marking Device Device Package Reel Size Tape width Quantity NCE6990 NCE6990 TO unless otherwise noted) http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Device Marking Device Device Package Reel Size Tape width Quantity HM4884A HM4884A SOP Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity HM4884A HM4884A SOP Parameter Symbol Limit Unit Dual N-Channel Enhancement Mode Power MOSFET Description The HM4884A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE1520K NCE1520K TO-252-2L - - -

Device Marking Device Device Package Reel Size Tape width Quantity NCE1520K NCE1520K TO-252-2L - - - http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

V DS =60V,I D =20A R DS(ON) V GS =10V Schematic diagram

V DS =60V,I D =20A R DS(ON) V GS =10V Schematic diagram http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE8580 NCE8580 TO-220-3L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCE8580 NCE8580 TO-220-3L Parameter Symbol Limit Unit http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

V DS =30V,I D =35A R DS(ON) < V GS =10V R DS(ON) < V GS =4.5V Schematic diagram

V DS =30V,I D =35A R DS(ON) < V GS =10V R DS(ON) < V GS =4.5V Schematic diagram http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE82H110D NCE82H110D TO-263-2L - - -

Device Marking Device Device Package Reel Size Tape width Quantity NCE82H110D NCE82H110D TO-263-2L - - - http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE01P13K NCE01P13K TO-252-2L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCE01P13K NCE01P13K TO-252-2L Parameter Symbol Limit Unit NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE01P30 NCE01P30 TO-220-3L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCE01P30 NCE01P30 TO-220-3L Parameter Symbol Limit Unit NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Taiwan Goodark Technology Co.,Ltd TGD0103M

Taiwan Goodark Technology Co.,Ltd TGD0103M TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE60P12K NCE60P12K TO-252-2L - - -

Device Marking Device Device Package Reel Size Tape width Quantity NCE60P12K NCE60P12K TO-252-2L - - - http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.this device is well suited

More information

Product Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A

Product Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A SIAI N-Channel Enhancement Mode Power MOSFET General Description The S75NF75 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use

More information

P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM

More information

NCE0208IA. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE0208IA. NCE N-Channel Enhancement Mode Power MOSFET.  Description. General Features. Application http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

NCE6012AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE6012AS. NCE N-Channel Enhancement Mode Power MOSFET.  Description. General Features. Application http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2 N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCEP0178AK NCEP0178AK TO-252-2L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCEP0178AK NCEP0178AK TO-252-2L Parameter Symbol Limit Unit http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

More information

Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment

Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

NCE6005AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE6005AS. NCE N-Channel Enhancement Mode Power MOSFET.   Description. General Features. Application http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Product Summary. BV DSS typ. 80 V R DS(ON) max. 4 mω I D 200 A

Product Summary. BV DSS typ. 80 V R DS(ON) max. 4 mω I D 200 A N-Channel Enhancement Mode Power MOSFET General Description The YMP200N08 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use

More information

NCE0203S. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE0203S. NCE N-Channel Enhancement Mode Power MOSFET.   Description. General Features. Application http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

NCE40P13S. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE40P13S. NCE P-Channel Enhancement Mode Power MOSFET.  Description. General Features. Application http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Device Marking Device Device Package Reel Size Tape width Quantity HM5P55R HM5P55R SOT-223 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity HM5P55R HM5P55R SOT-223 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit P-Channel Enhancement Mode Power MOSFET Description The HM5P55R uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCEP8818AS NCEP8818AS SOP-8 Ø330mm 12mm 2500 units

Device Marking Device Device Package Reel Size Tape width Quantity NCEP8818AS NCEP8818AS SOP-8 Ø330mm 12mm 2500 units http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

More information

30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET

30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com 30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The is designed to provide a high efficiency synchronous buck power stage with optimal layout and board

More information

PE2302C. N-Channel Enhancement Mode Power MOSFET 2302C DESCRIPTION GENERAL FEATURES. Application. Page 1

PE2302C. N-Channel Enhancement Mode Power MOSFET 2302C DESCRIPTION GENERAL FEATURES. Application. Page 1 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE30C uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is

More information

PJM8205DNSG Dual N Enhancement Field Effect Transistor

PJM8205DNSG Dual N Enhancement Field Effect Transistor DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCEP4085EG NCEP4085EG DFN5X6-8L - - -

Device Marking Device Device Package Reel Size Tape width Quantity NCEP4085EG NCEP4085EG DFN5X6-8L - - - http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

More information

Device Marking Device Device Package Reel Size Tape width Quantity 0102 NCE0102 SOT-23 Ø180mm 8 mm 3000 units

Device Marking Device Device Package Reel Size Tape width Quantity 0102 NCE0102 SOT-23 Ø180mm 8 mm 3000 units Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can

More information

SSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)

SSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified) Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET

More information

RM4503S8. N and P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package Marking and Ordering Information

RM4503S8. N and P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package Marking and Ordering Information RM4503S8 N and P-Channel Enhancement Mode Power MOSFET Description The RM4503S8 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The SOP-8 package is universally preferred

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE4606 SOP-8 Ø330mm 12mm 2500 units

Device Marking Device Device Package Reel Size Tape width Quantity NCE4606 SOP-8 Ø330mm 12mm 2500 units N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted

More information

Device Marking Device Device Package Reel Size Tape width Quantity EZ TO

Device Marking Device Device Package Reel Size Tape width Quantity EZ TO N-Channel Trench Power MOSFET General Description The EZ8590 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R DS(ON) is suitable

More information

Device Marking Device Device Package Reel Size Tape width Quantity HM4485B HM4485B SOP-8 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity HM4485B HM4485B SOP-8 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent R DS(ON), This device is suitable for use as a load switch or in PWM applications. General

More information

Device Marking Device Device Package Reel Size Tape width Quantity 30P25 NCE30P25S SOP-8 Ø330mm 12mm 2500 units

Device Marking Device Device Package Reel Size Tape width Quantity 30P25 NCE30P25S SOP-8 Ø330mm 12mm 2500 units http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), This device is suitable for use as a load switch or power

More information

Product Summary. BV DSS typ. 84 V. R DS(ON) typ. 6.8 mω I D 60 A

Product Summary. BV DSS typ. 84 V. R DS(ON) typ. 6.8 mω I D 60 A RM60N75LD N-Channel Enhancement Mode Power MOSFET General Description The RM60N75LD uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment

High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS (ON) voltages as low as 4.5V., low gate charge and operation with gate G D General

More information

NCE40P06J. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE40P06J. NCE P-Channel Enhancement Mode Power MOSFET.  Description. General Features. Application Pb Free Product http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate

More information

Device Marking Device Device Package Reel Size Tape width Quantity 30P12 NCE30P12S SOP-8 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity 30P12 NCE30P12S SOP-8 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCEP6080AG NCEP6080AG DFN5X6-8L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCEP6080AG NCEP6080AG DFN5X6-8L Parameter Symbol Limit Unit http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

More information

Device Marking Device Device Package Reel Size Tape width Quantity 3400 RM3400 SOT-23 Ø180mm 8 mm 3000 units

Device Marking Device Device Package Reel Size Tape width Quantity 3400 RM3400 SOT-23 Ø180mm 8 mm 3000 units RM3400 N-Channel Enhancement Mode Power MOSFET Description The RM3400 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This

More information

High power and current handing capability Lead free product is acquired Surface mount package SOT-23-6L top view

High power and current handing capability Lead free product is acquired Surface mount package SOT-23-6L top view N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted

More information

SIS2040 V V Complementary MOSFET. General Features. N-Channel PRODUCT SUMMARY. P-Channel PRODUCT SUMMARY

SIS2040 V V Complementary MOSFET. General Features. N-Channel PRODUCT SUMMARY. P-Channel PRODUCT SUMMARY 20V Complementary MOSFET General Features N-Channel PRODUCT SUMMARY VDSS ID RDS(ON)(mΩ) Typ 20 @ VGS=4.5V 20V 4.5A 25 @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged SOT-23-6L package P-Channel

More information

Device Marking Device Device Package Reel Size Tape width Quantity 8205A HM8205A TSSOP-8 Ø330mm 12mm 3000 units. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity 8205A HM8205A TSSOP-8 Ø330mm 12mm 3000 units. Parameter Symbol Limit Unit Dual N-Channel Enhancement Mode Power MOSFET Description The HM8205A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This

More information

Battery protection Load switch Power management SOT23-6L top view

Battery protection Load switch Power management SOT23-6L top view http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge.this device is suitable for use as

More information

Device Marking Device Device Package Reel Size Tape width Quantity HM4812 HM4812 SOP-8 Ø180mm 8 mm 3000 units. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity HM4812 HM4812 SOP-8 Ø180mm 8 mm 3000 units. Parameter Symbol Limit Unit Dual N-Channel Enhancement Mode Power MOSFET Description The HM4812 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.this device is suitable for use as a load switch and

More information

Device Marking Device Device Package Reel Size Tape width Quantity 6003 NCE6003Y SOT-23-3L Ø180mm 8 mm 3000 units

Device Marking Device Device Package Reel Size Tape width Quantity 6003 NCE6003Y SOT-23-3L Ø180mm 8 mm 3000 units http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low

More information

Device Marking Device Device Package Reel Size Tape width Quantity A2SHB HM2302A SOT-23 Ø180mm 8 mm 3000 units. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity A2SHB HM2302A SOT-23 Ø180mm 8 mm 3000 units. Parameter Symbol Limit Unit N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device

More information

NCE3415Y. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE3415Y. NCE P-Channel Enhancement Mode Power MOSFET.   Description. General Features. Application http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low

More information

DFN3X3-8 Pin Configuration. Units Symbol. Parameter

DFN3X3-8 Pin Configuration. Units Symbol. Parameter General Description Product Summery Description The WSD20L75DN uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Operating Junction and 55 to +175 C Storage Temperature Range

Operating Junction and 55 to +175 C Storage Temperature Range Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage

More information

PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity

PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity DESCRIPTION The SSF1341 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

RM1216. P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package marking and ordering information

RM1216. P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package marking and ordering information RM1216 P-Channel Enhancement Mode Power MOSFET Description The RM1216 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages.this device is suitable

More information

SSF6014D 60V N-Channel MOSFET

SSF6014D 60V N-Channel MOSFET Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

N-Channel Super Junction Power MOSFET

N-Channel Super Junction Power MOSFET RM21N650T7 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super

More information

N & P-Channel 100-V (D-S) MOSFET

N & P-Channel 100-V (D-S) MOSFET N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives

More information

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage

More information

Device Marking Device Device Package Reel Size Tape width Quantity. HM6602 HM6602 SOT-23-6L Ø180mm 8 mm 3000 units

Device Marking Device Device Package Reel Size Tape width Quantity. HM6602 HM6602 SOT-23-6L Ø180mm 8 mm 3000 units N and P-Channel Enhancement Mode Power MOSFET Description The HM6602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a Battery protection

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

RM1002. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Marking:1002

RM1002. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Marking:1002 RM1002 N-Channel Enhancement Mode Power MOSFET Description The 1002 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

KS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings

KS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D

More information

SSF11NS65UF 650V N-Channel MOSFET

SSF11NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche

More information

MT4160. N-Channel PowerTrench MOSFET. 60V, 9A, 10m. Absolute Maximum Ratings(TA =25. Thermal Characteristic. Package Marking and Ordering Information

MT4160. N-Channel PowerTrench MOSFET. 60V, 9A, 10m. Absolute Maximum Ratings(TA =25. Thermal Characteristic. Package Marking and Ordering Information N-Channel PowerTrench MOSFET 60V, 9A, 10m This N-Channel MOSFET is produced using Mos-tech Semiconductor s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance.

More information

HCD80R600R 800V N-Channel Super Junction MOSFET

HCD80R600R 800V N-Channel Super Junction MOSFET HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS

More information

HMS21N70,HMS21N70F. N-Channel Super Junction Power MOSFET II. General Description. Features. Application. Schematic diagram

HMS21N70,HMS21N70F. N-Channel Super Junction Power MOSFET II. General Description. Features. Application. Schematic diagram N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction

More information

N-Channel Super Junction Power MOSFET Ⅲ

N-Channel Super Junction Power MOSFET Ⅲ N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super

More information

Device Marking Device Device Package Reel Size Tape width Quantity. HM4622A HM4622A SOP-8 Ø330mm 12mm 2500 units

Device Marking Device Device Package Reel Size Tape width Quantity. HM4622A HM4622A SOP-8 Ø330mm 12mm 2500 units N and P-Channel Enhancement Mode Power MOSFET Description The HM4622A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch

More information

UNISONIC TECHNOLOGIES CO., LTD UT4411

UNISONIC TECHNOLOGIES CO., LTD UT4411 UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

PFP15T140 / PFB15T140

PFP15T140 / PFB15T140 FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel

More information

HCS80R1K4E 800V N-Channel Super Junction MOSFET

HCS80R1K4E 800V N-Channel Super Junction MOSFET HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

PPMT12V4 P-Channel MOSFET

PPMT12V4 P-Channel MOSFET P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -2 0.045 @ V GS =-4.5V -4.3 G() S(2)

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information