THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc 6 C / W Junction-to-Ambient R θja 42 C / W STATIC

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1 N- & annel Enhancement Mode P3ND5G PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 3 mω 5A annel -3 36mΩ -9A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 5 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel annel UNITS Drain-Source Voltage V DS 3-3 V Gate-Source Voltage V GS ± ± V T C = 5 C 5-9 Continuous Drain Current T C = 7 C -5 T A = 5 C 9-7 T A = 7 C Pulsed Drain Current I DM Avalanche Current I AS 9-8 Avalanche Energy L =.mh E AS 8 7 mj T C = 5 C Power Dissipation T C = 7 C 3 T A = 5 C 3 T A = 7 C Junction & Storage Temperature Range T j, T stg -55 to 5 Lead Temperature ( / 6 from case for sec.) T L 75 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc 6 C / W Junction-to-Ambient R θja 4 C / W Pulse width limited by maximum junction temperature. I D P D A W ELECTRICAL CHARACTERISTICS (T C = 5 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC V GS = V, I D = 5μA Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = -5μA LIMITS MIN TYP MAX 3-3 UNIT V REV. May--9

2 N- & annel Enhancement Mode P3ND5G V DS = V GS, I D = 5μA.7.5 Gate Threshold Voltage V GS(th) V DS = V GS, I D = -5μA Gate-Body Leakage I GSS V DS = V, V GS = ±V V DS = V, V GS = ±V ± ± na V DS = 4V, V GS = V Zero Gate Voltage Drain Current I DSS V DS = -4V, V GS = V V DS = V, V GS = V, T J = 55 C - μa V DS = -V, V GS = V, T J = 55 C - On-State Drain Current I D(ON) V DS = 5V, V GS = V V DS =-5V, V GS = -V A V GS = 4.5V, I D = 6A 6 3 Drain-Source On-State Resistance R DS(ON) V GS = -4.5V, I D = -5A V GS = V, I D = 7A mω V GS = -V, I D = -6A Forward Transconductance g fs V DS = V, I D = 7A V DS = -V, I D = -6A 9 5 S DYNAMIC Input Capacitance C iss annel Output Capacitance C oss V GS = V, V DS = V, f = MHz annel 6 67 pf Reverse Transfer Capacitance C rss V GS = V, V DS = -V, f = MHz 7 Gate Resistance Rg VGS = V, VDS = V, f = MHz 6.7 Ω Total Gate Charge Q g annel V DS =.5V (BR)DSS, V GS = V, Gate-Source Charge Gate-Drain Charge Q gs Q gd I D = 6A annel V DS =.5V (BR)DSS, V GS = -V, I D = -5A nc REV. May--9

3 N- & annel Enhancement Mode P3ND5G Turn-On Delay Time t d(on) annel 5 5 Rise Time t r V DS = V I D A, V GS = V, R GEN = 6Ω 6 Turn-Off Delay Time Fall Time t d(off) t f annel V DS = -V, R L = Ω I D -A, V GS = -V, R GEN = 6Ω 4 5 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 5 C) Continuous Current I S 9-7 A Forward Voltage V SD I F = I S, V GS = V I F = I S, V GS = V - V Pulse test : Pulse Width 3 μsec, Duty Cycle %. Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH P3ND5G, DATE CODE or LOT # REV. May--9 3

4 N- & annel Enhancement Mode P3ND5G TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL ID, Drain-To-Source Current(A).8 Output Characteristics 6 V GS = V V GS = 6V V GS = 4.5V V GS = 3V VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature ID, Drain-To-Source Current(A) Transfer Characteristics T J=5 C T J=5 C T J= - C E+3 VGS, Gate-To-Source Voltage(V) Capacitance Characteristic VGS=V ID=7A C, Capacitance(pF) 5.E+3 Ciss 4.E+3 3.E+3.E+3 Coss.E+3 Crss.E TJ, Junction Temperature( C) On-Resistance VS Drain Current. VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source VGS = 4.5V VGS = V ID = 7A ID, Drain-To-Source Current VGS, Gate-To-Source Voltage(V) REV. 4 May--9

5 N- & annel Enhancement Mode P3ND5G VGS, Gate-To-Source Voltage(V) Gate charge Characteristics 8 ID=6A VDS=5V Qg, Total Gate Charge IS, Source Current(A) Source-Drain Diode Forward Voltage.E+3.E+ T J =5 C.E+.E+ T J =5 C.E-.E-.E-3.E VSD, Source-To-Drain Voltage(V) ID, Drain Current(A) NOTE :.VGS= V.TC=5 C 3.RθJC = 6 C/W 4.Single Pulse.. Safe Operating Area Operation in This Area is Limited by RDS(ON) us ms ms ms S S DC VDS, Drain-To-Source Voltage(V) Power(W) Single Pulse Maximum Power Dissipation SINGLE PULSE RθJC = 6 C/W TC=5 C.... Single Pulse Time(s) r(t), Normalized Effective Transient Thermal Resistance.E+.E+.E-.E-.E-3.E-4 Duty Cycle= single Pluse Transient Thermal Response Curve Note. Duty cycle, D= t / t. R thjc = 6 /W 3. TJ-T C = P*R thjc 4. R thjc (t) = r(t)*r thjc.e-6.e-5.e-4.e-3.e-.e-.e+.e+.e+ T, Square Wave Pulse Duration[sec] REV. 5 May--9

6 N- & annel Enhancement Mode P3ND5G P-CHANNEL Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) 4 3 VGS = -V VGS = -6V VGS = -4.5V VGS = -3V VDS, Drain-To-Source Voltage(V) ID, Drain-To-Source Current(A) 4 3 TJ=5 C TJ=5 C TJ= - C VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain-Current Capacitance Characteristic.8 8.E VGS= -V ID= -6A TJ, Junction Temperature( C) On-Resistance VS Drain Current C, Capacitance(pF) 7.E+3 Ciss 6.E+3 5.E+3 4.E+3 3.E+3.E+3 Coss Crss.E+3.E VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source VGS = 4.5V VGS = V 3 -ID, Drain-To-Source Current ID = -6A VGS, Gate-To-Source Voltage(V) REV. 6 May--9

7 N- & annel Enhancement Mode P3ND5G Gate charge Characteristics Source-Drain Diode Forward Voltage.E+3 -VGS, Gate-To-Source Voltage(V) 8 ID=-5A VDS=-5V Qg, Total Gate Charge -IS, Source Current(A).E+.E+.E+.E-.E-.E-3.E-4. T J =5 C T J =5 C VSD, Source-To-Drain Voltage(V) Safe Operating Area Operation in This Area Single Pulse Maximum Power Dissipation ID, Drain Current(A) is Limited by RDS(ON) NOTE :.VGS= V.TC=5 C 3.RθJC = 6 C/W 4.Single Pulse us ms ms ms S S DC Power(W) SINGLE PULSE RθJC = 6 C/W TC=5 C VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve r(t), Normalized Effective Transient Thermal Resistance.E+.E+.E-.E-.E-3.E-4 Duty Cycle= single Pluse.E-6.E-5.E-4.E-3.E-.E-.E+.E+.E+ T, Square Wave Pulse Duration[sec] Note. Duty cycle, D= t / t. R thjc = 6 /W 3. TJ-T C = P*R thjc 4. R thjc = r(t)*r thjc REV. 7 May--9

8 N- & annel Enhancement Mode P3ND5G REV. 8 May--9