CYStech Electronics Corp.

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1 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH BVDSS 2V -2V Features Simple drive requirement Low gate charge Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : /3 ID.5A(VGS=.5V) -3A(VGS=-.5 V) 2mΩ(VGS=.5V) 56mΩ(VGS=-.5V) RDSON 28mΩ(VGS=2.5V) 7mΩ(VGS=-2.5V) (TYP.) 69mΩ(VGS=.5V) 25mΩ(VGS=-.5V) Equivalent Circuit Outline TSOP-6 D S D 2 G:Gate S:Source D:Drain Pin # S2 G2 G Ordering Information Device Package Shipping --T-G TSOP-6 (Pb-free lead plating and halogen-free package) 3 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T : 3 pcs / tape & reel,7 reel Product rank, zero for no rank products Product name

2 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : 2/3 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits N-channel P-channel Unit Drain-Source Breakdown Voltage BVDSS 2-2 Gate-Source Voltage VGS ±2 ±2 V Continuous Drain C (Note ).5-3 ID Continuous Drain C (Note ) A Pulsed Drain Current (Note 2) IDM 2-2 Total Power Dissipation (Note ) Pd. W Linear Derating Factor. W / C Operating Junction and Storage Temperature Tj, Tstg -55~+5 C Note :.Surface mounted on in² copper pad of FR- board, t 5 sec 2.Pulse width limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 8 Thermal Resistance, Junction-to-ambient, max RθJA (Note ) C/W Note :.Surface mounted on in² copper pad of FR- board, t 5 sec; 8 C/W when mounted on minimum copper pad N-Channel Electrical Characteristics (Tj=25 C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS V VGS=V, ID=25μA BVDSS/ Tj V/ C Reference to 25 C, ID=mA VGS(th) V VDS=VGS, ID=25μA IGSS - - ± na VGS=±2V, VDS=V IDSS - - VDS=2V, VGS=V μa - - VDS=6V, VGS=V, Tj=7 C ID=3.5A, VGS=.5V *RDS(ON) mω ID=.2A, VGS=2.5V ID=.5A, VGS=.5V *GFS S VDS=5V, ID=3A Dynamic Ciss Coss pf VDS=2V, VGS=V, f=mhz Crss *td(on) - - *tr *td(off) *tf ns VDS=5V, ID=A, VGS=5V, RG=3.3Ω, RD=5Ω

3 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : 3/3 *Qg *Qgs nc VDS=6V, ID=3A, VGS=.5V *Qgd Source-Drain Diode *VSD V VGS=V, IS=.2A *trr ns *Qrr nc IF=3A, VGS=V, dif/dt=a/μs *Pulse Test : Pulse Width 3μs, Duty Cycle 2% P-Channel Electrical Characteristics (Tj=25 C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS V VGS=V, ID=-25μA BVDSS/ Tj V/ C Reference to 25 C, ID=-mA VGS(th) V VDS=VGS, ID=-25μA IGSS - - ± na VGS=±2V, VDS=V IDSS VDS=-2V, VGS=V μa VDS=-6V, VGS=V, Tj=7 C ID=-2.5A, VGS=-.5V *RDS(ON) mω ID=-2A, VGS=-2.5V ID=-.5A, VGS=-.5V *GFS S VDS=-5V, ID=-2A Dynamic Ciss Coss pf VDS=-2V, VGS=V, f=mhz Crss - - *td(on) - - *tr VDS=-V, ID=-A, ns *td(off) VGS=-V, RG=3.3Ω, RD=Ω *tf *Qg *Qgs - - nc VDS=-6V, ID=-2A, VGS=-.5V *Qgd Source-Drain Diode *VSD V VGS=V, IS=-.2A *trr ns *Qrr nc IF=-2A, VGS=V, dif/dt=a/μs *Pulse Test : Pulse Width 3μs, Duty Cycle 2%

4 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : /3 N-channel Typical Characteristics Typical Output Characteristics Brekdown Voltage vs Ambient Temperature 2. ID, Drain Current(A) V, 5V, V, 3V, 2.5V,2V VGS=.5V BVDSS, Normalized Drain-Source Breakdown Voltage ID=25μA, VGS=V VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage.2 RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=2V VGS=.5V VGS=V VGS=2.5V.. ID, Drain Current(A) VSD, Source-Drain Voltage(V) VGS=V Tj=25 C Tj=5 C IDR, Reverse Drain Current(A) RDS(on), Static Drain-Source On- State Resistance(mΩ) Static Drain-Source On-State Resistance vs Gate-Source Voltage ID=3.5A ID=.2A VGS, Gate-Source Voltage(V) RDS(on), Normalized Static Drain- Source On-State Resistance Drain-Source On-State Resistance vs Junction Tempearture VGS=.5V, ID=3.5A RDS(ON)@Tj=25 C :2mΩ typ

5 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : 5/3 N-channel Typical Characteristics(Cont.) Capacitance---(pF) Capacitance vs Drain-to-Source Voltage Ciss C oss Crss VGS(th), NormalizedThreshold Voltage Threshold Voltage vs Junction Tempearture ID=mA ID=25μA VDS, Drain-Source Voltage(V) Single Pulse Power Rating, Junction to Ambient Gate Charge Characteristics 5 Power (W) 3 2 TJ(MAX)=5 C TA=25 C RθJA= C/W VGS, Gate-Source Voltage(V) VDS=V VDS=6V ID=3A... Pulse Width(s) Qg, Total Gate Charge(nC) Maximum Safe Operating Area Maximum Drain Current vs JunctionTemperature 5.5 ID, Drain Current(A). RDS(ON) Limited TA=25 C, Tj=5 C, VGS=.5V, RθJA= C/W Single Pulse μs ms ms ms... VDS, Drain-Source Voltage(V) DC ID, Maximum Drain Current(A) TA=25 C, VGS=.5V, RθJA= C/W

6 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : 6/3 N-channel Typical Characteristics(Cont.) ID, Drain Current(A) VDS=5V Typical Transfer Characteristics VGS, Gate-Source Voltage(V) PD, Power Dissipation(W) Power Derating Curve Mounted on FR- board with in² pad area TA, Ambient Temperature( ) Transient Thermal Response Curves D=.5 r(t), Normalized Transient Thermal Resistance Single Pulse.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t/t2 3.TJM-TA=PDM*RθJA(t).RθJA= C/W..E-.E-3.E-2.E-.E+.E+.E+2 t, Square Wave Pulse Duration(s) Forward Transfer Admittance vs Drain Current GFS, Forward Transfer Admittance(S). VDS= 5V V 5V Pulsed Ta=25 C.... ID, Drain Current(A)

7 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : 7/3 P-channel Typical Characteristics Typical Output Characteristics Brekdown Voltage vs Ambient Temperature 2 -VGS=V, 5V, V,.6 -ID, Drain Current (A) V -VGS=2V -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-25μA, VGS=V VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage.2 RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-.5V VGS=-.5V VGS=-2.5V VGS=-V -VSD, Source-Drain Voltage(V).8.6. VGS=V Tj=25 C Tj=5 C.. -ID, Drain Current(A) IDR, Reverse Drain Current (A) 3 Static Drain-Source On-State Resistance vs Gate-Source Voltage.6 Drain-Source On-State Resistance vs Junction Tempearture RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-2A ID=-2.5A RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-.5V, ID=-2.5A RDS(ON)@Tj=25 C : 56mΩ VGS, Gate-Source Voltage(V)

8 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : 8/3 P-channel Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage Threshold Voltage vs Junction Tempearture Capacitance---(pF) Ciss C oss Crss -VGS(th),Normalized Threshold Voltage ID=-25μA ID=-mA VDS, Drain-Source Voltage(V) Single Pulse Power Rating, Junction to Ambient Gate Charge Characteristics 5 ID=-2A Power (W) 3 2 TJ(MAX)=5 C TA=25 C RθJA= C/W -VGS, Gate-Source Voltage(V) VDS=-V VDS=-6V... Pulse Width(s) Qg, Total Gate Charge(nC) Maximum Safe Operating Area Maximum Drain Current vs JunctionTemperature 3.5 -ID, Drain Current (A). RDS(ON) Limited TA=25 C, Tj=5 C, VGS=-.5V, RθJA= C/W Single Pulse μs ms ms ms DC -ID, Maximum Drain Current(A) TA=25 C, VGS=-.5V, RθJA= C/W... -VDS, Drain-Source Voltage(V)

9 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : 9/3 P-channel Typical Characteristics(Cont.) -ID, Drain Current(A) Typical Transfer Characteristics 2 VDS=-5V PD, Power Dissipation(W) Power Derating Curve Mounted on FR- board with in² pad area VGS, Gate-Source Voltage(V) TA, Ambient Temperature( ) Transient Thermal Response Curves D=.5 r(t), Normalized Transient Thermal Resistance Single Pulse.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t/t2 3.TJM-TA=PDM*RθJA(t).RθJA= C/W..... t, Square Wave Pulse Duration(s) Forward Transfer Admittance vs Drain Current GFS, Forward Transfer Admittance-(S). VDS=-5V -V -5V Pulsed Ta=25 C.... -ID, Drain Current(A)

10 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : /3 Recommended Soldering Footprint Reel Dimension

11 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : /3 Carrier Tape Dimension

12 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : 2/3 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 26 +/-5 C 5 +/- seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3 C/second max. 3 C/second max. Preheat Temperature Min(TS min) Temperature Max(TS max) Time(ts min to ts max) C 5 C 6-2 seconds 5 C 2 C 6-8 seconds Time maintained above: Temperature (TL) Time (tl) 83 C 6-5 seconds 27 C 6-5 seconds Peak Temperature(TP) 2 +/-5 C 26 +/-5 C Time within 5 C of actual peak temperature(tp) -3 seconds 2- seconds Ramp down rate 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note :. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR- PCB of.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools.

13 Spec. No. : C6G6 Issued Date : Revised Date :27.8. Page No. : 3/3 TSOP-6 Dimension Marking: Device Name Date Code 3585 Style: Pin. Gate (G) Pin 2. Source2 (S2) Pin 3. Gate2 (G2) Pin. Drain2 (D2) Pin 5. Source (S) Pin 6. Drain (D) 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 DIM Millimeters Inches Millimeters Inches DIM Min. Max. Min. Max. Min. Max. Min. Max. A E A.... E A e.95 (BSC).37 (BSC) b e.9 (BSC).75 (BSC) c L D θ 8 8 Notes :.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : Lead :Pure tin plated. Mold Compound : Epoxy resin family, flammability solid burning class:ul9v-. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.