N-Channel Enhancement Mode MOSFET

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1 Features 20V/3A, R DS(ON) V GS =4.5V Pin Description R DS(ON) V GS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT23-3L Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. G Ordering and Marking Information - M24 X Lead Free Code Handing Code Temp. Range Packge Code N-Channel MOSFET Packge Code A: SOT23-3L Operating Junction Temp. Rang C: -55 to 150 C Handing Code TU:Tube TR:Tape & Reel Lead Free Code: L:Lead Free Device Blank:Original Device X:Date Code Note: TECHCODE lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. TECHCODE lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. TECHCODE reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1

2 Absolute Maximum Ratings (T A = 25 C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 ID* Continuous Drain Current 3 IDM* 300µs Pulsed Drain Current VGS=4.5V 10 IS* Diode Continuous Forward Current 1 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 PD* Maximum Power Dissipation TA=25 C 0.83 TA=100 C 0.3 RθJA* Thermal Resistance-Junction to Ambient 150 C/W Note: * Surface Mounted on 1in 2 pad area, t 10sec. Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. V A C W Unit Static Characteristics Drain-Source Breakdown BVDSS Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=250µA 20 V VDS=16V, VGS=0V 1 µa VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA V IGSS Gate Leakage Current VGS=±10V, VDS=0V ±100 na RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=3A mω VGS=2.5V, IDS=2A VSD a Diode Forward Voltage ISD=0.55A, VGS=0V V Gate Charge Characteristics b Qg Total Gate Charge VDS=10V, VGS=4.5V, Qgs Gate-Source Charge IDS=3A 0.7 nc Qgd Gate-Drain Charge 0.7 2

3 Electrical Characteristics (Cont.)(T A = 25 C unless otherwise noted) Symbol Parameter Test Condition Dynamic Characteristicsb Min. Typ. Max. Unit RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 5 Ω Ciss Input Capacitance 255 Coss Output VGS=0V, VDS=15V, Capacitance Frequency=1.0MHz 70 PF Crss Reverse Transfer Capacitance 50 td(on) Turn-on Delay Time 6 15 Tr Turn-on Rise Time VDD=-10V, RL=10Ω, 5 11 IDS=1A, VGEN=4.5V, Turn-off Delay td(off) RG=6Ω Time ns Tf Turn-off Fall Time 6 15 Notes: a : Pulse test ; pulse width 300µs, duty cycle 2%. b : Guaranteed by design, not subject to production testing. 3

4 Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature ( C) Safe Operation Area Tj - Junction Temperature ( C) Thermal Transient Impedance VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4

5 Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance VDS - Drain - Source Voltage (V) Transfer Characteristics ID - Drain Current (A) Gate Threshold Voltage VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 5

6 Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward Tj - Junction Temperature ( C) Capacitance Gate Charge VSD - Source - Drain Voltage(V) VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) 6

7 Packaging Information SOT23-3L Dim Millimeters Inches Min. Max. Min. Max. A A B C D E e 1.90/2.1 BSC /0.083 BSC. H L

8 Physical Specifications Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3 C/second max. 3 C/second max. Preheat Temperature Min (Tsmin) Temperature Max (Tsmax) Time (min to max) (ts) 100 C 150 C seconds 150 C 200 C seconds Time maintained above: 183 C 217 C Temperature (TL) Time (tl) seconds seconds Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5 C of actual Peak seconds seconds Temperature (tp) Ramp-down Rate 6 C/second max 6 C/second max Time 25 C to Peak Temperature 6 minutes max 8minutes max Notes: All temperatures refer to topside of the package.measured on the body surface. 8

9 Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process Package Peak Reflow Temperatures Package Thickness Volume mm3 <350 Volume mm3 350 <2.5 mm /-5 C /-5 C 2.5 mm /-5 C /-5 C Table 2. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm3 <350 Volume mm Volume mm3 >2000 <1.6 mm C* C* C* 1.6 mm 2.5 mm C* C* C* 2.5 mm C* C* C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 C. For example 260 C+0 C) at the rated MSL level. Reliability Test Program Test item Method Description SOLDERABILITY MIL-STD-883D C,5 SEC HOLT MIL-STD 883D Hrs 125 C PCT JESD-22-B, A Hrs, 100% RH, 121 C TST MIL-STD 883D C ~ 150 C, 200 Cycles Carrier Tape & Reel Dimensions 9

10 Carrier Tape & Reel Dimensions Application A B C J T1 T2 W P E 178±1 60 ± ± ± SOT23-3L F D D1 Po P1 Ao Bo Ko t 3.5 ± MIN ± ±0.03 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOT 23-3L

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