Micro Commercial Components MCP140N10Y N-Channel Enhancement Mode Field Effect Transistor TO-220 Symbol Parameter Rating Unit 1 2 3

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1 omponents 2736 Marilla Street Chatsworth!"# $%!"# MCP4NY Features Trench Power MV MOSFET technology Low DS(ON) Halogen free available upon request by adding suffix "-HF" Low Gate Charge Optimized for fast-switching applications Epoxy meets UL 94 V- flammability rating Moisture Sensitivity Level Maximum 25 O C Unless Otherwise Specified Symbol Parameter ating Unit V DS Drain-source Voltage V I DM 3) Pulsed Drain Current (Note 5 A I D Continuous Drain Current T C = 25 C 4 (Note 7) T C = C 5 A V GS Gate-source Voltage ±2 V P DSM Power Dissipation (Note ) T C = 25 C 22 T C = C W E AS Single pulse avalanche energy (Note 3) 8 mj T J Operating Junction Temperature -55 to +75 T STG Storage Temperature -55 to +75 N-Channel Enhancement Mode Field Effect Transistor F A K H B 2 3 TO-22 Q U T C S L G N V D J Internal Block Diagram.GATE 2.DAIN 3.SOUCE G D S DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A B C D F G H J K L N Q S T U V of 5 evision: A 27//27

2 Electrical characteristics (T a =25 unless otherwise noted) M C C Symbol Parameter Conditions Min Typ Max Units STATIC PAAMETES BV DSS Drain-Source Breakdown Voltage I D =25 A, V GS =V V I DSS V DS =V, V GS =V Zero Gate Voltage Drain Current A T J =55 C 5 I GSS Gate-Body leakage current V DS =V, V GS =±2V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =25 A V DS(ON) V GS =V, I D =5A Static Drain-Source On-esistance m T J =25 C g FS Diode Forward Voltage V DS =5V, I D =5A 8 S V SD Diode Forward Voltage I S =5A,V GS =V V I S Maximum Body-Diode Continuous Current (Note 7) 4 A DYNAMIC PAAMETES C iss Input Capacitance 692 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 26 pf C rss everse Transfer Capacitance 34 pf g Gate resistance V GS =V, V DS =V, f=mhz 2.6 SWITCHING PAAMETES Q g Total Gate Charge 7 nc Q gs Gate Source Charge V GS =V, V DS =5V, I D =5A 4 nc Q gd Gate Drain Charge 37 nc t D(on) Turn-on Delay Time 48 ns t r Turn-on ise Time V GS =V, V DS =5V, L =2.5Ω, 56 ns t D(off) Turn-off Delay Time GEN =3Ω 75 ns t f Turn-off Fall Time 33 ns t rr Body Diode everse ecovery Time I F =2A,di/dt=5A/µs 6 ns Q rr Body Diode everse ecovery charge I F =2A,di/dt=5A/µs 56 nc. The value of θja is measured with the device mounted on in2 F 4 board with 2oz. Copper, in a still air environment with TA =25 C. The Power dissipation PDSM is based on θja t s and the maximum allowed junction temperature of 5 C. The value in any given application depends on the user's specific board design. 2. The power dissipation PD is based on TJ(MAX)=75 C, using junction to case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3. Single pulse width limited by junction temperature TJ(MAX)=75 C. 4. The θja is the sum of the thermal impedance from junction to case θjc and case to ambient. 5. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.5% max. 6. These curves are based on the junction to case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=75 C. The SOA curve provides a single pulse rating. 7. The maximum current rating is package limited. evision: A 2 of 5 27//27

3 8 Fig : Output Characte teristi tics V 6.5V 6.V 5.5V 8 Fig 2: Transfe ansfer Characte acteristi stics V DS DS =5V 6 4 V GS GS =5.V C 25 C Fig 3: ds(o (on) vs Drai ain Current and Gate Voltage Fig 4: ds(o (on) vs Gate Voltage I D =2A DS(on) (mω) V GS =V DS(on) (mω) Fig 5: ds(o (on) vs. Temperature V GS =V I D =5A Fig 6: Capacitance Characteristics Ciss DS(on) on)_norm _Normalized C - Capaci apacitance (PF) Coss.8.6 V GS =V f=mhz Crss Tj - Junction Temperature ( C) evision: A 3 of 5 27//27

4 Fig 7: Gate Charge Charac acte teristics V DS DS =5V I D =5A I S - Diode Current rrent(a) Fig 8: Body-di dy-diode de Forwar ard Characte acteristi stics 25 C 25 C Qg (nc) V SD - Diode Forward rd Voltage( age(v) Fig 9: Powe wer Dissipati pation Fig : Drai ain Current Derati ating P tot (W) Tc - Case Temperature erature ( C) Tc - Case Temperature erature ( C) Fig : Safe Operating Area Limited by ds(on) us us us ms ms DC Single pulse Tc=25 C.. evision: A 4 of 5 27//27

5 Ordering Information : Device Part Number-BP Note : Adding "-HF" suffix for halogen free, eg. Part Number-BP-HF Packing Bulk;Kpcs/Box ***IMPOTANT NOTICE*** Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Corp. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights,nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Corp. and all the companies whose products are represented on our website, harmless against all damages. ***LIFE SUPPOT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Corporation. ***CUSTOME AWAENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 5 of 5 evision: A 27//27