MCC. BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW. Features. NPN General Purpose Transistors. Maximum Ratings SOT-323
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1 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low current (max. 100mA) Low voltage (max. 65V) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Halogen free available upon request by adding suffix "-HF" Maximum Ratings Operating temperature : -65 to +150 Storage temperature : -65 to +150 Thermal resistance from junction to ambient*: 625K/W Symbol MCC Parameter Min Max Units OFF CHARACTERISTICS V (BR)CBO Collector-Base Breakdown Voltage (I C=10µAdc, IE=0) BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW V (BR)CEO Collector-Emitter Breakdown Voltage (I C=10mAdc, IB=0) BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW V (BR)EBO Emitter-Base Breakdown Voltage (I E=1µAdc, I C=0) BC846AW/BW, BC847AW/BW/CW BC848AW/BW/CW omponents Marilla Street Chatsworth!"# $%!"# Marking: BC846AW1A ; BC846BW1B BC847AW1E ; BC847BW1F ; BC847CW1G BC848AW1JS/1J ; BC848BW1KS/1K ; BC848CW1LS/1L Electrical 25 Unless Otherwise Specified 6 5 I C Collector Current (DC) 100 madc I CM Peak Collector Current 200 madc I BM Peak Base Current 200 madc * Transistor mounted on an FR4 printed-circuit board BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW NPN General Purpose Transistors F A E D SOT-323 G H J K B INCHES MM DIM MIN MAX MIN MAX NOTE A B C D.026 Nominal 0.65Nominal E F G H J K C Suggested Solder Pad Layout 0.70 DIMENSIONS B C E inches mm Revision: C 1 of /09/24
2 ON CHARACTERISTICS Symbol Parameter Min Typ Max Units I CBO Collector-base Cut-off Current (I CE=0, V CB=30) (I CE=0, V CB=30, T j=150 ) 15 5 na µa I CEO Emitter-base Cut-off Current (I C=0, V EB=5) 100 na V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage (I C=10mAdc, I B=0.5mAdc) (I C=100mAdc, I B=5mAdc*) Base-Emitter Saturation Voltage (I C=10mAdc,I B=0.5mAdc) (I C=100mAdc, I B=5mAdc*) DC Current Gain (I C=10µA; V CE=5V) BC846AW; BC847AW;BC848AW BC846BW; BC847BW;BC848BW BC847CW;BC848CW DC Current Gain (I C=2mA; V CE=5V) BC846AW; BC847AW;BC848AW BC846BW; BC847BW;BC848BW BC847CW;BC848CW V BE Base-emitter Voltage (I C=2mAdc,V CE=5V) (I C=10mAdc,V CE=5V) Cc Collector Capacitance (V CB=10V; I E=I e=0; f=1mhz) 4.5 pf f T Transition Frequency (V CE=5V; I C=10mA; f=100mhz) 100 MHz F Noise Figure (V CE=5V; I C=200µA; f=1khz; B=200Hz; R S=2K ) 10 db * Pulse test: t P 300µs; of 5
3 Typical Characteristics 846AW,BW;BC847AW, BW, CW;BC848AW, BW, CW 3 of 5
4 4 of 5
5 Ordering Information : Device Part Number-TP Packing Tape&Reel;3Kpcs/Reel Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF ***IMPORTANT NOTICE*** Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Corp. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights,nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Corp. and all the companies whose products are represented on our website, harmless against all damages. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 5 of 5 3
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BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m
NSS22WTG 2, 2 A, Low CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
BC846ALT1G Series. General Purpose Transistors. NPN Silicon
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: > 4 V ESD Rating Machine Model: > 4 V S and NSV Prefix for Automotive and Other
BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon
BC87-6L, SBC87-6L, BC87-25L, SBC87-25L, BC87-4L, SBC87-4L General Purpose Transistors NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION
M C C. MT200CB18T2 MT200CB16T Amp THYRISTOR/DIODE. Features. MODULE 800~1800 Volts. Applications. Circuit
Features pplications omponents 2736 Marilla Street Chatsworth!"# $%!"# Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix designates RoHS Compliant. See ordering information) International standard package
ZXT12N50DX. SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 3A MSOP8
ZXT12N50DX SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 45m ;I C = 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: V CEO =15V; V CE(sat) =.1V; I C = 1.5A; PNP: V CEO =-12V; V CE(sat) =-.1V; I C = -1.25A; DESCRIPTION This new combination device comprises
M C C SMBJ11AHE3 THRU SMBJ78CAHE3. Features. Transient Voltage Suppressor 11 to 78 Volts 600 Watt
omponents 2736 Marilla Street Chatsworth!"# $%!"# SMBJAHE3 THU SMBJ78CAHE3 Features For surface mount applicationsin order to optimize board space Lead Free Finish/ohs Compliant (Note) ("P"Suffix designates
NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
Part Type differentiation Ordering code Remarks 2N3904 2N3904-BULK or 2N3904-TAP Bulk / Ammopack
Small Signal Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor 2N3906 is recommended. On special request,
0.3W, PNP Plastic-Encapsulate Transistor
0.3W, PNP Plastic-Encapsulate Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR FCX705 SUMMARY V CEO =120V; V CE(sat) = 1.3V; I C = -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance
BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor
Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications
Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9
Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)
DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC
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65 V, 00 ma NPN general-purpose transistors Rev. 06 7 February 006 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Polarity V (BR)CEO IC (max.) h FE (1) 100 krad (Si) low dose rate
Datasheet Hi-Rel NPN and PNP complementary transistors 60 V, 0.8 A 8 5 Features Polarity V (BR)CEO IC (max.) h FE NPN 60 V 0.8 A 160 1 4 Flat-8 PNP -60-0.8 A 160 1. at IC = 1 A and V CE = 2 V 100 krad
MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30