BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC

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1 65 V, 00 ma NPN general-purpose transistors Rev February 006 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table : Product overview Type number [] Package PNP Philips JEITA JEDEC complement BC846 SOT - TO-6AB BC856 BC846W SOT SC-70 - BC856W BC846T SOT46 SC-75 - BC856T BC546A [] SOT54 SC-4A TO-9 BC556A BC546B [] SOT54 SC-4A TO-9 BC556B [] Valid for all available selection groups. [] Also available in SOT54A and SOT54 variant packages (see Section ).. Features General-purpose transistors SMD plastic packages Two different gain selections. Applications General-purpose switching and amplification.4 Quick reference data Table : Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CEO collector-emitter voltage open base V I C collector current ma h FE DC current gain V CE =5V; I C =ma h FE group A h FE group B

2 65 V, 00 ma NPN general-purpose transistors. Pinning information Table : Pinning Pin Description Simplified outline Symbol SOT; SOT; SOT46 base emitter collector 006aaa44 sym0 SOT54 emitter base collector SOT54A emitter base collector SOT54 variant emitter base collector 00aab47 00aab48 00aab447 sym06 sym06 sym06 Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February 006 of 4

3 65 V, 00 ma NPN general-purpose transistors. Ordering information Table 4: Ordering information Type number [] Package Name Description Version BC846 - plastic surface mounted package; leads SOT BC846W SC-70 plastic surface mounted package; leads SOT BC846T SC-75 plastic surface mounted package; leads SOT46 BC546A [] SC-4A plastic single-ended leaded (through hole) package; SOT54 leads BC546B [] SC-4A plastic single-ended leaded (through hole) package; leads SOT54 [] Valid for all available selection groups. [] Also available in SOT54 and SOT54 variant packages (see Section and Section 9). 4. Marking Table 5: Marking codes Type number Marking code [] Type number Marking code [] BC846 D* BC846T M BC846A A* BC846AT A BC846B B* BC846BT B BC846W D* BC546A C546A BC846AW A* BC546B C546B BC846BW B* - - [] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February 006 of 4

4 65 V, 00 ma NPN general-purpose transistors 5. Limiting values 6. Thermal characteristics Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 604). Symbol Parameter Conditions Min Max Unit V CBO collector-base voltage open emitter - 80 V V CEO collector-emitter voltage open base - 65 V V EBO emitter-base voltage open collector - 6 V I C collector current - 00 ma I CM peak collector current single pulse; - 00 ma t p ms I BM peak base current single pulse; t p ms - 00 ma P tot total power dissipation T amb 5 C [] SOT - 50 mw SOT - 00 mw SOT46-50 mw SOT mw T j junction temperature - 50 C T amb ambient temperature C T stg storage temperature C [] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air [] SOT K/W SOT K/W SOT K/W SOT K/W [] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February of 4

5 65 V, 00 ma NPN general-purpose transistors 7. Characteristics Table 8: Characteristics T amb =5 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit I CBO collector-base cut-off current V CB =0V; I E =0A na V CB =0V; I E =0A; µa T j = 50 C I EBO emitter-base cut-off V EB =5V; I E = 0 A na current h FE DC current gain h FE group A V CE =5V; I C =0µA h FE group B V CE =5V; I C =0µA DC current gain V CE =5V; I C = ma h FE group A V CE =5V; I C = ma h FE group B V CE =5V; I C = ma V CEsat collector-emitter I C = 0 ma; I B = 0.5 ma mv saturation voltage I C = 00 ma; I B =5mA [] mv V BEsat base-emitter I C = 0 ma; I B = 0.5 ma [] mv saturation voltage I C = 00 ma; I B =5mA [] mv V BE base-emitter voltage I C = ma; V CE =5V [] mv I C = 0 ma; V CE =5V [] mv f T transition frequency V CE =5V; I C = 0 ma; f = 00 MHz MHz C c collector capacitance V CB =0V; I E =i e =0A; f=mhz - pf C e emitter capacitance V EB = 0.5 V; I C =i c =0A; - - pf f=mhz NF noise figure I C = 00 µa; V CE =5V; R S =kω; f = khz; B = 00 Hz - 0 db [] Pulse test: t p 00 µs; δ 0.0. [] V BEsat decreases by approximately.7 mv/k with increasing temperature. [] V BE decreases by approximately mv/k with increasing temperature. Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February of 4

6 65 V, 00 ma NPN general-purpose transistors 400 h FE 00 () mgt7 00 V BE (mv) () mgt74 () 00 () () 400 () 00 Fig V CE =5V () T amb = 50 C () T amb =5 C () T amb = 55 C Selection A: DC current gain as a function of collector current; typical values Fig V CE =5V () T amb = 55 C () T amb =5 C () T amb = 50 C Selection A: Base-emitter voltage as a function of collector current; typical values 0 V CEsat (mv) mgt75 00 V BEsat (mv) 000 mgt76 () 800 () 0 () () () () 00 Fig I C /I B =0 () T amb = 50 C () T amb =5 C () T amb = 55 C Selection A: Collector-emitter saturation voltage as a function of collector current; typical values Fig I C /I B =0 () T amb = 55 C () T amb =5 C () T amb = 50 C Selection A: Base-emitter saturation voltage as a function of collector current; typical values Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February of 4

7 65 V, 00 ma NPN general-purpose transistors 600 h FE 500 () mgt77 00 V BE (mv) 000 mgt () 00 () 600 () () 00 () 00 Fig V CE =5V () T amb = 50 C () T amb =5 C () T amb = 55 C Selection B: DC current gain as a function of collector current; typical values Fig V CE =5V () T amb = 55 C () T amb =5 C () T amb = 50 C Selection B: Base-emitter voltage as a function of collector current; typical values 0 4 V CEsat (mv) mgt79 00 V BEsat (mv) 000 mgt () () () 0 () 400 () () 00 Fig I C /I B =0 () T amb = 50 C () T amb =5 C () T amb = 55 C Selection B: Collector-emitter saturation voltage as a function of collector current; typical values Fig I C /I B =0 () T amb = 55 C () T amb =5 C () T amb = 50 C Selection B: Base-emitter saturation voltage as a function of collector current; typical values Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February of 4

8 65 V, 00 ma NPN general-purpose transistors 8. Package outline Fig 9. Package outline SOT (TO-6AB) Fig 0. Package outline SOT (SC-70) Fig. Package outline SOT46 (SC-75) Fig. Package outline SOT54 (SC-4A/TO-9) max max Fig. Package outline SOT54A Fig 4. Package outline SOT54 variant Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February of 4

9 65 V, 00 ma NPN general-purpose transistors 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the NC ordering code. [] Type number [] Package Description Packing quantity BC846 SOT 4 mm pitch, 8 mm tape and reel BC846W SOT 4 mm pitch, 8 mm tape and reel BC846T SOT46 4 mm pitch, 8 mm tape and reel BC546A SOT54 bulk, straight leads SOT54A tape and reel, wide pitch tape ammopack, wide pitch SOT54 variant bulk, delta pinning BC546B SOT54 bulk, straight leads SOT54A tape and reel, wide pitch tape ammopack, wide pitch SOT54 variant bulk, delta pinning [] For further information and the availability of packing methods, see Section 6. [] Valid for all available selection groups. Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February of 4

10 65 V, 00 ma NPN general-purpose transistors 0. Soldering solder lands solder resist occupied area (x) solder paste 0.50 (x) 0.60 (x).00.0 MSA49 Fig 5. Reflow soldering footprint SOT (TO-6AB).40.0 (x) solder lands solder resist occupied area preferred transport direction during soldering MSA47 Fig 6. Wave soldering footprint SOT (TO-6AB) Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February of 4

11 65 V, 00 ma NPN general-purpose transistors solder lands (x) 0.50 (x).90 solder resist occupied area solder paste 0.55 (x).40 MSA49 Fig 7. Reflow soldering footprint SOT (SC-70) solder lands solder resist occupied area 0.90 (x) preferred transport direction during soldering MSA49 Fig 8. Wave soldering footprint SOT (SC-70) solder lands (x) (x).50 MSA48 solder resist occupied area solder paste Fig 9. Reflow soldering footprint SOT46 (SC-75) Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February 006 of 4

12 65 V, 00 ma NPN general-purpose transistors. Revision history Table 0: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes Product data sheet - - BC846_BC847_ BC848_5 BC846T_847T_ SERIES_ BC846W_BC847W_ BC848W_4 BC546_547_4 Modifications: BC846_BC847_BC848_ Product specification BC846T_847T_SERIES_ 0005 Product specification BC846W_BC847W_ BC848W_4 The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. This data sheet is a type combination out of the previous data sheets BC846_BC847_BC848_5, BC846T_847T_SERIES_, BC846W_BC847W_BC848W_4 and BC546_547_4. Table 8 Characteristics : F redefined to NF noise figure Product specification BC546_547_ Product specification BC846_BC847_ BC848_ BC846T_847T_ BC846W_847W_ BC546_547_ Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February 006 of 4

13 65 V, 00 ma NPN general-purpose transistors. Data sheet status Level Data sheet status [] Product status [] [] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [] Please consult the most recently issued data sheet before initiating or completing a design. [] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL [] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.. Definitions Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 604). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 4. Disclaimers customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 5. Trademarks Notice All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 6. Contact information For additional information, please visit: For sales office addresses, send an to: sales.addresses@ Koninklijke Philips Electronics N.V All rights reserved. Product data sheet Rev February 006 of 4

14 65 V, 00 ma NPN general-purpose transistors 7. Contents Product profile General description Features Applications Quick reference data Pinning information Ordering information Marking Limiting values Thermal characteristics Characteristics Package outline Packing information Soldering Revision history Data sheet status Definitions Disclaimers Trademarks Contact information Koninklijke Philips Electronics N.V. 006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 7 February 006 Document number: Published in The Netherlands

PDTD113E series. NPN 500 ma, 50 V resistor-equipped transistors; R1 = 1 kω, R2 = 1 kω. 500 ma NPN Resistor-Equipped Transistors (RET) family.

PDTD113E series. NPN 500 ma, 50 V resistor-equipped transistors; R1 = 1 kω, R2 = 1 kω. 500 ma NPN Resistor-Equipped Transistors (RET) family. PDTDE series NPN 500 ma, 50 V resistor-equipped transistors; R = kω, R = kω Rev. 0 4 April 005 Product data sheet. Product profile. General description 500 ma NPN Resistor-Equipped Transistors (RET) family.