BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES
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1 BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC85-AU SERIES NPN GENERAL PURPOSE TRANSISTORS OLTAGE 3/45/65 olt POWER 33 mwatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = ma Acqire quality system certificate : TS6949 AEC-Q qualified Lead free in compliance with EU RoHS 2/65/EU directive Green molding compound as per IEC6249 Std.. (Halogen Free) MECHANICAL DATA Case: SOT-23, Plastic.2(3.4).(2.8).56(.4).47(.2).79(2.).7(.8).6(.5)MIN..8(.2).3(.8) Terminals: Solderable per MIL-STD-75, Method 226 Approx. Weight:.3 ounces,.84 grams.4(.).(.).2(.5).44(.).35(.9).3(.35) Device Marking: BC846A-AU=46A BC847A-AU=47A BC848A-AU=48A BC846B-AU=46B BC847B-AU=47B BC848B-AU=48B BC849B-AU=49B BC85B-AU=5B BC847C-AU=47C BC848C-AU=48C BC849C-AU=49C BC85C-AU=5C ABSOLUTE RATINGS Parameter Symbol alue Units Collector - Emitter oltage BC846-AU BC847-AU,BC85-AU BC848-AU,BC849-AU CEO Collector - Base oltage BC846-AU BC847-AU,BC85-AU BC848-AU,BC849-AU CBO Emitter - Base oltage BC846-AU BC847-AU,BC85-AU BC848-AU,BC849-AU EBO Collector Current - Continuous ma THERMAL CHARACTERISTICS Parameter Symbol alue Units Max Power Dissipation (Note ) PTOT 33 mw Thermal Resistance, Junction to Ambient RθJA 375 O C/W Operating Junction Temperature and Storage Temperature Range TJ,TSTG -55 to 5 O C Note : Transistor mounted on FR-4 board 8 cm 2. March,26-RE.7 PAGE.
2 BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC85-AU SERIES ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition MIN. TYP. MAX. Units Collector - Emitter Breakdown oltage BC846A-AU/B-AU BC847A-AU/B-AU/C-AU,BC85B-AU/C-AU BC848A-AU/B-AU/C-AU,BC849B-AU/C-AU (BR)CEO IC=mA, IB= Collector - Base Breakdown oltage BC846A-AU/B-AU BC847A-AU/B-AU/C-AU,BC85B-AU/C-AU BC848A-AU/B-AU/C-AU,BC849B-AU/C-AU (BR)CBO IC=uA, IE= Emitter - Base Breakdown oltage BC846A-AU/B-AU BC847A-AU/B-AU/C-AU,BC85B-AU/C-AU BC848A-AU/B-AU/C-AU,BC849B-AU/C-AU (BR)EBO IE=uA, IC= Emitter-Base Cutoff Current IEBO EB=5 - - na Collector-Base Cutoff Current ICBO CB=3, IE= CB=3, IE=,TJ=5 O C na μa DC Current Gain BC846-AU~BC848-AU Suffix "A" BC846-AU~BC85-AU Suffix "B" BC847-AU~BC85-AU Suffix "C" h FE IC=uA, CE DC Current Gain BC846-AU~BC848-AU Suffix "A" BC846-AU~BC85-AU Suffix "B" BC847-AU~BC85-AU Suffix "C" h FE IC=2mA, CE Collector - Emitter Saturation oltage CE(SAT) IC=mA, IB=.5mA IC=mA, IB=5mA Base - Emitter Saturation oltage BE(SAT) IC=mA, IB=.5mA IC=mA, IB=5mA Base - Emitter oltage BE(ON) IC=2mA, CE IC=mA, CE Collector - Base Capacitance C CBO CB=, IE=, f=mhz pf NPN March,26-RE.7 PAGE. 2
3 BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC85-AU SERIES ELECTRICAL CHARACTERISTICS CURE (BC846A-AU,BC847A-AU,BC848A-AU) 3 =5 C CB =3 25 B, Collector Current (na) hfe CE = C =25 C Collector Current, I Junction Temperature, ( O C C) Fig.. Typical B vs. Junction Temperature Fig. 2. Typical h FE vs. Collector Current 2 8 = C = C BE(ON) 6 4 CE(sat) = 5 C 2 = 5 C CE =2.... Fig. 3. Typical BE(ON) vs. Collector Current Fig. 4. Typical CE(SAT) vs. Collector Current 2 C ib (EB) BE(sat) = C Capacitance, C (pf) C ob (CB) 2 = 5 C =2... Reverse oltage () Fig. 5. Typical BE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse oltage March,26 RE.7 PAGE. 3
4 BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC85-AU SERIES ELECTRICA5L CHARACTERISTICS CURE (BC846B-AU,BC847B-AU,BC848B-AU,BC849B-AU,BC85B-AU) 5 B, Collector Current (na) CB =3 hfe =25 C =5 C CE = C Junction Temperature, ( O C) 5.. Collector Current, IC Fig.. Typical B vs. Junction Temperature Fig. 2. Typical h FE vs. Collector Current 2 BE(ON) 8 6 = C CE(sat) = 5 C = C 4 2 = 5 C CE =2.. Fig. 3. Typical BE(ON) vs. Collector Current.. Fig. 4. Typical CE(SAT) vs. Collector Current 2 C ib (EB) BE(sat) = C Capacitance, C (pf) C ob (CB) 2 = 5 C =2... Reverse oltage () Fig. 5. Typical BE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse oltage March,26 RE.7 PAGE. 4
5 BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC85-AU SERIES ELECTRICAL CHARACTERISTICS CURE (BC847C-AU,BC848C-AU,BC849C-AU,BC85C-AU) 2 B, Collector Current (na) CB =3 hfe =5 C = C =25 C CE Junction Temperature, ( O C) Fig.. Typical B vs. Junction Temperature.. Collector Current, IC, Fig. 2. Typical h FE vs. Collector Current 2 BE(ON) 8 6 = C CE(sat) = 5 C = C 4 2 = 5 C CE =2.. Fig. 3. Typical BE(ON) vs. Collector Current.. Fig. 4. Typical CE(SAT) vs. Collector Current 2 BE(sat) = C Capacitance, C (pf) C ib (EB) C ob (CB) 2 = 5 C =2... Reverse oltage () Fig. 5. Typical BE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse oltage March,26 RE.7 PAGE. 5
6 BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC85-AU SERIES MOUNTING PAD LAYOUT SOT-23 Unit: inch(mm).35 MIN. (.9) MIN..3 MIN. (.8) MIN..37 (.95).43 (.).78 (2.).43 (.).6 (2.7) ORDER INFORMATION Packing information T/R - 2K per 3" plastic Reel T/R - 3K per 7 plastic Reel March,26 RE.7 PAGE. 6
7 BC846,BC847,BC848,BC849,BC85 SERIES Part No_packing code_ersion BC846-AU_R_A BC846-AU_R2_A For example : RB5-4_R2_ Part No. Serial number ersion code means HF Packing size code means 3" Packing type means T/R Packing Code XX ersion Code XXXXX Packing type st Code Packing size code 2 nd Code HF or RoHS st Code 2 nd ~5 th Code Tape and Ammunition Box (T/B) Tape and Reel (T/R) Bulk Packing (B/P) Tube Packing (T/P) Tape and Reel (Right Oriented) (TRR) Tape and Reel (Left Oriented) (TRL) FORMING A N/A HF serial number R 7" RoHS serial number B 3" 2 T 26mm X S 52mm Y L F PANASERT T/B CATHODE UP (PBCU) PANASERT T/B CATHODE DOWN (PBCD) U D March,26 RE.7 PAGE. 7
8 BC846,BC847,BC848,BC849,BC85 SERIES Disclaimer Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. Panjit International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages resulting from such improper use or sale. Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when complaining. March,26 RE.7 PAGE. 8
DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) Rating Symbol Value Units Collector-Base Voltage. 50 V Collector-Emitter Voltage
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MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR FEATURES MECHANICAL DATA ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS
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MMBT3904-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS
MMBT3904AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR OLTAGE 40 olt POWER 225 mwatt FEATURES SOT23 Unit: inch(mm) NPN epitaxial silicon, planar design emitter voltage CE = 40 0.120(3.04) 0.110(2.80) current
MMBD914 SURFACE MOUNT SWITCHING DIODE. VOLTAGE 100 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS THERMAL CHARACTERISTICS
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MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS THERMAL CHARACTERISTICS
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BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES. VOLTAGE 100 Volt FEATURES MECHANICAL DATA
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES VOLTAGE 00 Volt FEATURES Smallest 00V Dual, isolated Schottky diode currently available Lead free in compliance with EU RoHS 20/65/EU directive
BC846AW-AU ~ BC850CW-AU
NPN GENERAL PURPOSE TRANSISTORS OLTAGE 30/45/65 lt POWER 250 mwatt FEATURES General purpse amplifier applicatins NPN epitaxial silicn, planar design Cllectr current IC = 100mA AEC-Q101 qualified Lead free
Rating Symbol Value Units T STG. Parameter Symbol Conditions Min. Typical Max. Units I BR V R I PP
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE 5 Volt POWER 200 Watt FEATURES 200 Watts peak pules power( tp=8/20μs) Small package for use in portable electronics IEC61000-4-2 8KV
BAV3004W HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
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SVM1045V2 LOW VF SCHOTTKY RECTIFIER. VOLTAGE 45 Volt CURRENT 10 Ampere FEATURES MECHANICAL DATA. MAXIMUM RATINGS(TA=25 o C unless otherwise noted)
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MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 400~1000 Volt CURRENT 1.2 Amper. per diode I FSM 50 A
MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 400~000 Volt CURRENT.2 Amper FEATURES Glass Passivated Chip Junciton Ideally Suited for Automatic Assembly Save Space On Printed
US1R SURFACE MOUNT ULTRAFAST RECTIFIER FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS. VOLTAGE 1300 Volt CURRENT 1 Ampere
SURFACE MOUNT ULTRAFAST RECTIFIER VOLTAGE 300 Volt CURRENT Ampere FEATURES For surface mounted applications in order to optimize board space Easy pick and place Ultrafast recovery times for high efficiency
Green molding compound as per IEC61249 Std.. (Halogen Free) 0.098(2.5) 0.086(2.2)
SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 50 to 1000 Volt CURRENT 1 Ampere FEATURES Recongnized File #E111753 0.335(8.51) 0.316(8.05) 0.009(0.25) 0.060(1.524) 0.040(1.016) Plastic
SVM1045V LOW VF SCHOTTKY RECTIFIER. VOLTAGE 45 Volt CURRENT 10 Ampere FEATURES MECHANICAL DATA. MAXIMUM RATINGS(TA=25 o C unless otherwise noted)
.. SVM45V LOW VF SCHOTTKY RECTIFIER VOLTAGE 45 Volt CURRENT Ampere FEATURES Ideal for automated placement Ultra low forward voltage drop, low power loss High efficiency Operation 0.172(4.35) 0.167(4.25)
MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volt CURRENT 1 Amper Recongnized File #E139973
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2N7002KDW. 60V N-Channel Enhancement Mode MOSFET - ESD Protected. Parameter Symbol Limit Units 60 V. Drain-Source Voltage V DS + 20 V
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SXM54ALF ULTRA LOW VF SCHOTTKY RECTIFIER. VOLTAGE 45 Volt CURRENT 5 Ampere FEATURES MECHANICAL DATA. MAXIMUM RATINGS(TA=25 o C unless otherwise noted)
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1N4148W SURFACE MOUNT SWITCHING DIODES. VOLTAGE 100 Volt POWER 410mWatt FEATURES MECHANICAL DATA
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PJSD05LCFN2 TYPICAL CHARACTERISTIC CURVES. I R,Reverse Current (na) Percent of Rated Peak Reverse Voltage (%) time, s.
BI-DIRECTIONAL ESD PROTECTION DIODE This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V dc and below.this
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MS4~MS20 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volt CURRENT Ampere FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O For surface mounted applications
RS1AWG SERIES SURFACE MOUNT FAST RECOVERY RECTIFIER FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SURFACE MOUNT FAST RECOVERY RECTIFIER VOLTAGE 50 to 000 Volts CURRENT Amperes FEATURES For surface mounted applications in order to optimize board space Easy pick and place Fast recovery times for high
2N7002KTB. 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES MECHANICAL DATA. =25 O C unless otherwise noted )
6V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES R DS(ON), @V,I DS @5mA=3Ω R DS(ON), @4.5V,I DS @2mA=4Ω Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance
SS12L SERIES LOW VF SURFACE MOUNT SCHOTTKY RECTIFIER MECHANICAL DATA. VOLTAGE 20 to 90 Volt CURRENT 1.0 Ampere FEATURES
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PBAT54-AU SERIES. SURFACE MOUNT SCHOTTKY DIODES Voltage 30 V Current 0.2 A. Features. Mechanical Data
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SK54BLF LOW VF SCHOTTKY RECTIFIER. VOLTAGE 40 Volt CURRENT 5 Ampere FEATURES MECHANICAL DATA. MAXIMUM RATINGS (TA=25 o C unless otherwise noted)
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PUF5GI / UF504IG ULTRAFAST RECOVERY RECTIFIERS. Voltage 400 V Current 5 A. Features UF504IG DO-201AD. Mechanical Data UF5GI SMC
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1N4736A SERIES SILICON ZENER DIODE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FEATURES MECHANICAL DATA
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PSX34-AU. SURFACE MOUNT LOW VF SCHOTTKY BARRIER RECTIFIER Voltage 40 V Current 3 A. Features. Mechanical Data
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1 Watt MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 3.3 to 51 Volt POWER 1 Watt FEATURES For surface mounted applications in order to optimize board space Low inductance Plastic package has Underwriters Laboratory
MBR1040VL SURFACE MOUNT LOW FORWARD DROP SCHOTTKY BARRIER. VOLTAGE 40 Volt CURRENT 1 Amper FEATURES MECHANICAL DATA ABSOLUTE RATINGS
SURFAE MOUNT LOW FORWARD DROP SHOTTKY BARRIER VOLTAGE 40 Volt URRENT 1 Amper FEATURES Fast switching speed Surface mount package ideally suited for automatic insertion 0.115(2.90) 0.106(2.70) 0.075(1.90)
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PARAMETER SYMBOL LIMIT UNITS
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PJSD12LCFN2 BI-DIRECTIONAL ESD PROTECTION DIODE
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V DD =30V, I D =200mA, Turn-On Rise Time tr V GS =10V, Turn-Off Delay Time td (off) (Note 1,2) R G =10Ω Turn-Off Fall Time tf
60V N-Channel Enhancement Mode MOSFET ESD Protected Voltage 60 V Current 300mA SOT-23 Unit : inch(mm) Features R DS(ON), V GS @10V, I D @500mA
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20V N-Channel Enhancement Mode MOSFET ESD Protected PARAMETER SYMBOL LIMIT UNITS
20V N-Channel Enhancement Mode MOSFET ESD Protected Voltage 20 V Current 800mA SOT-523 Unit : inch(mm) Features R DS(ON), V GS@4.5V,I DS@500mA=0.4Ω R DS(ON), V GS@2.5V,I DS@300mA=0.7Ω R DS(ON), V GS@1.8V,I
300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
PARAMETER SYMBOL LIMIT UNITS
20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Voltage -20 V Current -4.3A Unit : inch(mm) Features RDS(ON), VGS@-4.5V, ID@-4.3A
PJSD05CW SERIES. Fig.130. Single Line TVS Diode for ESD Protection in Portable Electronics FEATURES MECHANICAL DATA ABSOLUTE MAXIMUM RATINGS
Single Line TS Diode for ESD Protection in Portable Electronics OLTAGE 5 to 36 olt POWER 35 Watt FEATURES Transient protection for data lines to IE 6-4-2 (ESD) + 15k (air),+ 8k (contact).78(1.95).68(1.75)
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 5000 Watt. 20 to 250 Volt MAXIMUM RATINGS AND CHARACTERISTICS. Rating Symbol Value Units
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 5000 Watt STAND-OFF VOLTAGE 20 to 250 Volt FEATURES For surface mounted applications in order to optimize board space. Glass passivated junction
300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
ER2DAF SURFACE MOUNT RECTIFIER. VOLTAGE 200 Volts CURRENT 2 Amperes FEATURES MECHANICAL DATA
SURFACE MOUNT FEATURES RECTIFIER VOLTAGE 200 Volts CURRENT 2 Amperes Plastic package has Underwriters Laboratory Flammability Classification 94V-O For surface mounted applications Glass passivated junction
ES1A~ES1J SURFACE MOUNT SUPERFAST RECTIFIER FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SURFACE MUNT SUPERFAST RECTIFIER VLTAGE 5 to 6 Volts CURRENT 1 Amperes FEATURES For surface mounted applications in order to optimize board space Built-in strain relief Easy pick and place Superfast recovery
PPJW3P10A. 100V P-Channel Enhancement Mode MOSFET. Voltage -100 V Current -2.6 A. Features. Mechanical Data
100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -2.6 A Features SOT-223 R DS(ON), V GS @-10V,I D @-2.6A
NPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
PSBT30100VYT ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER. Voltage 100 V Current 30 A. Features. Mechanical Data
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER Voltage 100 V Current 30 A Features TO220AB Unit: inch(mm) Ultra low forward voltage drop, low power loss High efficiency operation Lead free in compliance with
0.3W, PNP Plastic-Encapsulate Transistor
0.3W, PNP Plastic-Encapsulate Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to
BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor
Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications
C 2 B 1 E 1 E 2 B 2 C 1. Top View
MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification
BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor
NPN Transistor A/B/C ~ BC550A/B/C FEATURES For switching and AF amplifier applications These types are subdivided into three groups A, B and C according to their current gain Moisture sensitivity level
5 to 70 Volt DEVICES FOR BIPOLAR APPLICATIONS
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watt STAND-OFF VOLTAGE 5 to 70 Volt Recongnized File # E210467 FEATURES For surface mounted applications in order to optimize board space AEC-Q101 qualified
NPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
MCC BC558A/B/C. Features. PNP Silicon Amplifier Transistor 625mW
omponents 2736 Marilla Street Chatsworth!"# $%!"# BC556A/B/C BC557A/B/C A/B/C Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 15 o C Junction Temperature
BC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
TO-92 NPN Bipolar Transistor
/Y/R/BL FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, R, BL - Pb free and RoHS compliant NPN Bipolar Transistor MECHANICAL DATA - Case: small outline
Obsolete Product(s) - Obsolete Product(s)
MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon
BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2
PT23T5401 Transistor. Feature. Mechanical Characteristics. Absolute maximum Top View. Parameter Symbol Value Units
PT23T54 Transistor Feature 3 - Collector PNP epitaxial planar silicon transistor - Base Top View 2 - Emitter Mechanical Characteristics Lead finish:% matte Sn(Tin) Mounting position: Any Qualified max
MMBT2222A SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY
BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free
-HF Thru. -HF Series (PNP) RoHS Device Halogen Free Features - Ideally suited for automatic insertion - Power dissipation PCM:.25W (@T=25 C) - Low current.(max. 1m) - Collector-base voltage CBO: = -8 =
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
BC846BS / BC847AS NPN GENERAL PURPOSE TRANSISTORS. VOLTAGE 45/65 Volt POWER 250 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS
/ NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45/65 Vlt POWER 250 mwatt FEATURES General purpse amplifier applicatins NPN epitaxial silicn, planar design llectr current I = ma Lead free in cmpliance with EU
BC856ALT1 Series. General Purpose Transistors. PNP Silicon. MAXIMUM RATINGS (T A = 25 C unless otherwise noted) MARKING DIAGRAM
Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit CollectorEmitter oltage BC856 BC857 BC858, BC859 CollectorBase oltage BC856 BC857
PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Package: SOT-723 Emitter -Base Breakdown Voltage 11V High DC current gain typical 38 Low Saturation Voltage 8mv.15 continuous collector
MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 150 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS THERMAL CHARACTERISTICS
NPN GENERAL PURPOSE SWITHING TRANSISTOR VOLTAGE 40 Vlt POWER 150 mwatt SOT323 Unit: inch(mm) FEATURES NPN epitaxial silicn, planar design llectremitter vltage V E = 40V llectr current I = 200mA Lead free
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.
Device Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
2N7002K. 60V N-Channel Enhancement Mode MOSFET - ESD Protected I D T A C C P D T J FEATURES MECHANICAL DATA
6 N-hannel Enhancement Mode MOFET - E Protected FEATURE R (ON), G @,I @5mA=3Ω R (ON), G @4.5,I @ma=4ω Advanced Trench Process Technology High ensity ell esign For Ultra Low On-Resistance ery Low Leakage
BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856
Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor
BC856ALT1G Series. General Purpose Transistors. PNP Silicon
General Purpose Transistors PNP Silicon Features S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices
Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
UNISONIC TECHNOLOGIES CO., LTD MMBT4401
UNISONIC TECHNOLOGIES CO., LTD MMBT441 NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION The UTC MMBT441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. 2 1
P6AF3.3A-AU~P6AF64A-AU
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Voltage 3.3~64 V Power 600 W SMAF Unit: inch(mm) Features For surface mounted applications in order to optimize board space. Ultra thin profile package for space
Single Pulsed (Note 4) E AS 1100 mj Repetitive (Note 5) E AR 29 mj Peak Diode Recovery dv/dt (Note 5) dv/dt 15 V/ns 290 TO-3PL P D 220
500V N-Channel MOSFET Voltage 500 V Current 24A Features: R DS(ON), @,I D@ 12.0A
DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 15 2004 Oct 11 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and
UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2N441 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. ORDERING
BC846ALT1G Series. General Purpose Transistors. NPN Silicon
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: > 4 V ESD Rating Machine Model: > 4 V S and NSV Prefix for Automotive and Other
UNISONIC TECHNOLOGIES CO., LTD MPSA92/93
UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
SOT-563 Plastic-Encapsulate Transistors
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC T SOT-563 Plastic-Encapsulate Transistors BC847BVN DUAL TRANSISTOR (NPN+PNP) SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W)
MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW
MUN52xxDWT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors;
Obsolete Product(s) - Obsolete Product(s)
PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL
General Purpose Transistors
General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =
DUAL 6 NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: CEO =6; I C = ; h FE =1-3 PNP: CEO =-6; I C = -; h FE =1-3 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6
UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089
UNISONIC TECHNOLOGIES CO., LTD MMBT5088/ NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 3 The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from
DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
TSC873 NPN Silicon Planar High Voltage Transistor
TO-92 Pin Definition: SOT-223 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector 3. Base 1. Base 2. Collector 3. Emitter BV CBO BV CEO I C V CE(SAT) 600V 400V 1A 0.5V @ I C / I B = 500mA / 100mA Features