BC846AW-AU ~ BC850CW-AU
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- Brice Walton
- 5 years ago
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1 NPN GENERAL PURPOSE TRANSISTORS OLTAGE 30/45/65 lt POWER 250 mwatt FEATURES General purpse amplifier applicatins NPN epitaxial silicn, planar design Cllectr current IC = 100mA AEC-Q101 qualified Lead free in cmpliance with EU RHS 2.0 Green mlding cmpund as per IEC standard MECHANICAL DATA Case: SOT-323, Plastic Terminals: Slderable per MIL-STD-750, Methd 2026 Apprx. Weight: unce, gram Device Marking: BC846AW-AU=46A BC847AW-AU=47A BC848AW-AU=48A BC846BW-AU=46B BC847BW-AU=47B BC848BW-AU=48B BC849BW-AU=49B BC850BW-AU=50B BC847CW-AU=47C BC848CW-AU=48C BC849CW-AU=49C BC850CW-AU=50C ABSOLUTE RATINGS Parameter Symbl alue Units Cllectr - Emitter ltage Cllectr - Base ltage Emitter - Base ltage BC846W-AU BC847W-AU, BC850W-AU BC848W-AU, BC849W-AU BC846W-AU BC847W-AU, BC850W-AU BC848W-AU, BC849W-AU BC846W-AU BC847W-AU, BC850W-AU BC848W-AU, BC849W-AU CEO CBO EBO Cllectr Current - Cntinuus I C 100 ma THERMAL CHARACTERISTICS Parameter Symbl alue Units Max Pwer Dissipatin (Nte 1) P TOT 250 mw Typical thermal Resistance R θja 500 R θjc 100 O C/W Junctin Temperature T J -55 t 150 O C Strage Temperature T STG -55 t 150 O C Nte 1: Transistr munted n FR-5 bard 1.0 x 0.75 x in. PAGE. 1
2 ELECTRICAL CHARACTERISTICS Parameter Symbl Test Cnditin MIN. TYP. MAX. Units Cllectr - Emitter Breakdwn ltage BC846AW-AU,BW-AU BC847AW-AU/BW-AU/CW-AU,BC850BW-AU/CW-AU BC848AW-AU/BW-AU/CW-AU,BC849BW-AU/CW-AU (BR)CEO IC=10mA, IB= Cllectr - Base Breakdwn ltage BC846AW-AU,BW-AU BC847AW-AU/BW-AU/CW-AU,BC850BW-AU/CW-AU BC848AW-AU/BW-AU/CW-AU,BC849BW-AU/CW-AU (BR)CBO IC=10μA, IE= Emitter - Base Breakdwn ltage BC846AW-AU,BW-AU BC847AW-AU/BW-AU/CW-AU,BC850BW-AU/CW-AU BC848AW-AU/BW-AU/CW-AU,BC849BW-AU/CW-AU (BR)EBO IE=1μA, IC= Emitter-Base Cutff Current IEBO EB= na Cllectr-Base Cutff Current ICBO CB=30, IE=0 CB=30, IE=0,T J =150 O C na μa DC Current Gain BC846~BC848 Suffix "AW-AU" BC846~BC850 Suffix "BW-AU" BC847~BC850 Suffix "CW-AU" h FE IC=10μA, CE= DC Current Gain BC846~BC848 Suffix "AW-AU" BC846~BC850 Suffix "BW-AU" BC847~BC850 Suffix "CW-AU" h FE IC=2mA, CE= Cllectr - Emitter Saturatin ltage CE(SAT) IC=10mA, IB =0.5mA IC=100mA, IB =5.0mA Base - Emitter Saturatin ltage BE(SAT) IC=10mA, IB =0.5mA IC=100mA, IB =5mA Base - Emitter ltage BE(ON) IC=2mA, CE=5 IC=10mA, CE= Cllectr - Base Capacitance C CBO CB=10, IE=0, f=1mhz pf PAGE. 2
3 ELECTRICAL CHARACTERISTICS CURE ( BC846 AW-AU, BAC847 AW-AU, BC848 AW-AU ) Fig.1 Typical I CBO vs. Junctin Temperature Fig.2 Typical h FE vs. Cllectr Current Fig.3 Typical BE(ON) vs. Cllectr Current Fig.4 Typical CE(SAT) vs. Cllectr Current Fig.5 Typical BE(SAT) vs. Cllectr Current Fig.6 Typical Capacitances vs.reverse ltage PAGE. 3
4 ELECTRICAL CHARACTERISTICS CURE ( BC846 BW-AU, BAC847 BW-AU, BC848 BW-AU, BC849BW-AU) ( BC850 BW-AU) Fig.1 Typical I CBO vs. Junctin Temperature Fig.2 Typical h FE vs. Cllectr Current Fig.3 Typical BE(ON) vs. Cllectr Current Fig.4 Typical CE(SAT) vs. Cllectr Current Fig.5 Typical BE(SAT) vs. Cllectr Current Fig.6 Typical Capacitances vs.reverse ltage PAGE. 4
5 ELECTRICAL CHARACTERISTICS CURE ( BAC847 CW-AU, BC848 CW-AU, BC849 CW-AU, BC850 CW-AU) Fig.1 Typical I CBO vs. Junctin Temperature Fig.2 Typical h FE vs. Cllectr Current Fig.3 Typical BE(ON) vs. Cllectr Current Fig.4 Typical CE(SAT) vs. Cllectr Current Fig.5 Typical BE(SAT) vs. Cllectr Current Fig.6 Typical Capacitances vs.reverse ltage PAGE. 5
6 MOUNTING PAD LAYOUT (0.66) (1.85) (0.86) (0.65) (0.65) ORDER INFORMATION Packing infrmatin T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel PAGE. 6
7 Part N_packing cde_ersin BC846AW-AU_R1_000A1 BC846AW-AU_R2_000A1 Fr example : RB500-40_R2_00001 Part N. Serial number ersin cde means HF Packing size cde means 13" Packing type means T/R Packing Cde XX ersin Cde XXXXX Packing type 1 st Cde Packing size cde 2 nd Cde HF r RHS 1 st Cde 2 nd ~5 th Cde Tape and Ammunitin Bx (T/B) Tape and Reel (T/R) Bulk Packing (B/P) Tube Packing (T/P) Tape and Reel (Right Oriented) (TRR) Tape and Reel (Left Oriented) (TRL) FORMING A N/A 0 HF 0 serial number R 7" 1 RHS 1 serial number B 13" 2 T 26mm X S 52mm Y L F PANASERT T/B CATHODE UP (PBCU) PANASERT T/B CATHODE DOWN (PBCD) U D PAGE. 7
8 Disclaimer Reprducing and mdifying infrmatin f the dcument is prhibited withut permissin frm Panjit Internatinal Inc.. Panjit Internatinal Inc. reserves the rights t make changes f the cntent herein the dcument anytime withut ntificatin. Please refer t ur website fr the latest dcument. Panjit Internatinal Inc. disclaims any and all liability arising ut f the applicatin r use f any prduct including damages incidentally and cnsequentially ccurred. Panjit Internatinal Inc. des nt assume any and all implied warranties, including warranties f fitness fr particular purpse, nn-infringement and merchantability. Applicatins shwn n the herein dcument are examples f standard use and peratin. Custmers are respnsible in cmprehending the suitable use in particular applicatins. Panjit Internatinal Inc. makes n representatin r warranty that such applicatins will be suitable fr the specified use withut further testing r mdificatin. The prducts shwn herein are nt designed and authrized fr equipments relating t human life and fr any applicatins cncerning life-saving r life-sustaining, such as medical instruments, aerspace machinery et cetera. Custmers using r selling these prducts fr use in such applicatins d s at their wn risk and agree t fully indemnify Panjit Internatinal Inc. fr any damages resulting frm such imprper use r sale. Since Panjit uses lt number as the tracking base, please prvide the lt number fr tracking when cmplaining. PAGE. 8
BC846BS / BC847AS NPN GENERAL PURPOSE TRANSISTORS. VOLTAGE 45/65 Volt POWER 250 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS
/ NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45/65 Vlt POWER 250 mwatt FEATURES General purpse amplifier applicatins NPN epitaxial silicn, planar design llectr current I = ma Lead free in cmpliance with EU
MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 150 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS THERMAL CHARACTERISTICS
NPN GENERAL PURPOSE SWITHING TRANSISTOR VOLTAGE 40 Vlt POWER 150 mwatt SOT323 Unit: inch(mm) FEATURES NPN epitaxial silicn, planar design llectremitter vltage V E = 40V llectr current I = 200mA Lead free
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC85-AU SERIES NPN GENERAL PURPOSE TRANSISTORS OLTAGE 3/45/65 olt POWER 33 mwatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design
DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) Rating Symbol Value Units Collector-Base Voltage. 50 V Collector-Emitter Voltage
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MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR FEATURES MECHANICAL DATA ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS
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MMBT3904-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS
MMBT3904AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR OLTAGE 40 olt POWER 225 mwatt FEATURES SOT23 Unit: inch(mm) NPN epitaxial silicon, planar design emitter voltage CE = 40 0.120(3.04) 0.110(2.80) current
MMBD914 SURFACE MOUNT SWITCHING DIODE. VOLTAGE 100 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS THERMAL CHARACTERISTICS
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1N4148W SURFACE MOUNT SWITCHING DIODES. VOLTAGE 100 Volt POWER 410mWatt FEATURES MECHANICAL DATA
SURFACE MUNT SWITCHING DIDES VLTAGE 100 Volt PWER 410mWatt FEATURES 0.154(3.90) 0.141(3.60) Fast switching Speed. Electrically ldentical to Standerd JEDEC High Conductance Surface Mount Package ldeally
MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS THERMAL CHARACTERISTICS
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BAV3004W HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
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BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES. VOLTAGE 100 Volt FEATURES MECHANICAL DATA
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Rating Symbol Value Units T STG. Parameter Symbol Conditions Min. Typical Max. Units I BR V R I PP
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US1R SURFACE MOUNT ULTRAFAST RECTIFIER FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS. VOLTAGE 1300 Volt CURRENT 1 Ampere
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MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 400~1000 Volt CURRENT 1.2 Amper. per diode I FSM 50 A
MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 400~000 Volt CURRENT.2 Amper FEATURES Glass Passivated Chip Junciton Ideally Suited for Automatic Assembly Save Space On Printed
Green molding compound as per IEC61249 Std.. (Halogen Free) 0.098(2.5) 0.086(2.2)
SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 50 to 1000 Volt CURRENT 1 Ampere FEATURES Recongnized File #E111753 0.335(8.51) 0.316(8.05) 0.009(0.25) 0.060(1.524) 0.040(1.016) Plastic
List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...
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MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volt CURRENT 1 Amper Recongnized File #E139973
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LOW VF SCHOTTKY RECTIFIER VOLTAGE 40 Volt CURRENT 5 Ampere FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94VO utilizing Flame Retardant Expoxy Molding Compound Ultra
RS1AWG SERIES SURFACE MOUNT FAST RECOVERY RECTIFIER FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SURFACE MOUNT FAST RECOVERY RECTIFIER VOLTAGE 50 to 000 Volts CURRENT Amperes FEATURES For surface mounted applications in order to optimize board space Easy pick and place Fast recovery times for high
SXM54ALF ULTRA LOW VF SCHOTTKY RECTIFIER. VOLTAGE 45 Volt CURRENT 5 Ampere FEATURES MECHANICAL DATA. MAXIMUM RATINGS(TA=25 o C unless otherwise noted)
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SURFACE MUNT SUPERFAST RECTIFIER VLTAGE 5 to 6 Volts CURRENT 1 Amperes FEATURES For surface mounted applications in order to optimize board space Built-in strain relief Easy pick and place Superfast recovery
SVM1045V LOW VF SCHOTTKY RECTIFIER. VOLTAGE 45 Volt CURRENT 10 Ampere FEATURES MECHANICAL DATA. MAXIMUM RATINGS(TA=25 o C unless otherwise noted)
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1 Watt MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
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SK23L SERIES. LOW VF SCHOTTKY RECTIFIER VOLTAGE 30 to 100 Volts CURRENT 2.0 Amperes FEATURES MECHANICAL DATA
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C 2 B 1 E 1 E 2 B 2 C 1. Top View
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MCC. BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW. Features. NPN General Purpose Transistors. Maximum Ratings SOT-323
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SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 5000 Watt. 20 to 250 Volt MAXIMUM RATINGS AND CHARACTERISTICS. Rating Symbol Value Units
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V DD =30V, I D =200mA, Turn-On Rise Time tr V GS =10V, Turn-Off Delay Time td (off) (Note 1,2) R G =10Ω Turn-Off Fall Time tf
60V N-Channel Enhancement Mode MOSFET ESD Protected Voltage 60 V Current 300mA SOT-23 Unit : inch(mm) Features R DS(ON), V GS @10V, I D @500mA
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omponents 2736 Marilla Street Chatsworth!"# $%!"# BC556A/B/C BC557A/B/C A/B/C Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 15 o C Junction Temperature
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![BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC](/thumbs/72/67715622.jpg "BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC")
65 V, 00 ma NPN general-purpose transistors Rev. 06 7 February 006 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
PARAMETER SYMBOL LIMIT UNITS
20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -4.0A Features RDS(ON), VGS@-4.5V, ID@-4.0A
PJSD03TS~PJSD36TS. SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE 3~36 Volt POWER 120 Watt FEATURES APPLICATIONS
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE 3~36 Volt POWER 120 Watt FEATURES 120 Watts peak pules power( tp=8/20μs) Small package for use in portable electronics Suitable replacement
SOT-563 Plastic-Encapsulate Transistors
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC T SOT-563 Plastic-Encapsulate Transistors BC847BVN DUAL TRANSISTOR (NPN+PNP) SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W)
BC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
Obsolete Product(s) - Obsolete Product(s)
PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL
BCW68G PNP General-Purpose Amplifier
BW68G PNP General-Purpse Amplifier Descriptin This device is designed fr general-purpse amplifier and switching applicatins at currents t 5 ma. Surced frm prcess 63. SOT-23 Mark: DG B E BW68G PNP General-Purpse
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package
20V N-Channel Enhancement Mode MOSFET ESD Protected PARAMETER SYMBOL LIMIT UNITS
20V N-Channel Enhancement Mode MOSFET ESD Protected Voltage 20 V Current 800mA SOT-523 Unit : inch(mm) Features R DS(ON), V GS@4.5V,I DS@500mA=0.4Ω R DS(ON), V GS@2.5V,I DS@300mA=0.7Ω R DS(ON), V GS@1.8V,I
BC856ALT1 Series. General Purpose Transistors. PNP Silicon. MAXIMUM RATINGS (T A = 25 C unless otherwise noted) MARKING DIAGRAM
Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit CollectorEmitter oltage BC856 BC857 BC858, BC859 CollectorBase oltage BC856 BC857
PARAMETER SYMBOL LIMIT UNITS
20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Voltage -20 V Current -4.3A Unit : inch(mm) Features RDS(ON), VGS@-4.5V, ID@-4.3A
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
TSC873 NPN Silicon Planar High Voltage Transistor
TO-92 Pin Definition: SOT-223 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector 3. Base 1. Base 2. Collector 3. Emitter BV CBO BV CEO I C V CE(SAT) 600V 400V 1A 0.5V @ I C / I B = 500mA / 100mA Features
PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Package: SOT-723 Emitter -Base Breakdown Voltage 11V High DC current gain typical 38 Low Saturation Voltage 8mv.15 continuous collector
Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
Device Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =
DUAL 6 NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: CEO =6; I C = ; h FE =1-3 PNP: CEO =-6; I C = -; h FE =1-3 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6
Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor
PPJW3P10A. 100V P-Channel Enhancement Mode MOSFET. Voltage -100 V Current -2.6 A. Features. Mechanical Data
100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -2.6 A Features SOT-223 R DS(ON), V GS @-10V,I D @-2.6A
DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon
BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4140DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2001 Dec 13
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low V CEsat NPN/PNP transistor 2001 Dec 13 FEATURES 600 mw total power dissipation Low collector-emitter saturation voltage High
CPC1004NTR. 4 Pin SOP OptoMOS Relay
4 Pin SOP OptMOS Relay Units Blcking Vltage (DC) V Lad Current (DC) 3 ma Max R ON 4 Ω Features Small 4 Pin SOP Package Lw Drive Pwer Requirements (TTL/CMOS Cmpatible) N Mving Parts High Reliability Arc-Free
Dual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
ACPL-8x7. Data Sheet. Multi-Channel Full-Pitch Phototransistor Optocoupler. Description. Features. Applications
Data Sheet ACPL-8x7 Multi-Channel Full-Pitch Phttransistr Optcupler Descriptin The ACPL-827 is a DC-input dual-channel, full-pitch phttransistr ptcupler that cntains tw light emitting dides ptically cupled
List... Package outline... Features Mechanical data... Maximum ratings... Electrical Characteristics... Rating and characteristic curves...
SMD NPN Transistr / Frmsa MS List List... Package utline... 2 Features... 2 Mechanical data... Maximum ratings... Electrical haracteristics... Rating and characteristic curves... 2 2 3~4 5~6 Pinning infrmatin...
STR2550. High voltage fast-switching PNP power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
High voltage fast-switching PNP power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape and
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic TAB Fast-switching speed Applications Voltage regulators High
DATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 NPN/PNP general purpose transistor Supersedes data of 1999 Apr 26 2001 Oct 26 FEATURES Low collector capacitance Low collector-emitter saturation
65 V, 100 ma NPN general-purpose transistors
Rev. 8 24 April 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number
Continental Device India Limited
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS E C B High Current Transistor ABSOLUTE MAXIMUM RATINGS (T a =25ºC) DESCRIPTION
Darlington Amplifier Transistor
We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW
MUN52xxDWT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors;
BC847 series. 1 Product profile. 45 V, 100 ma NPN general-purpose transistors. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 1 2 March 217 Product data sheet 1 Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product
MMBTA42. Small signal NPN transistor. Features. Applications. Description
Small signal NPN transistor Datasheet - production data Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 SOT-23 Figure
CPC1130NTR. 4 Pin SOP OptoMOS Relay
4 Pin SOP OptMOS Relay Units Blcking Vltage 3 V Lad Current 12 ma Max R ON 3 Ω Features Small 4 Pin SOP Package Lw Drive Pwer Requirements (TTL/CMOS Cmpatible) N Mving Parts High Reliability Arc-Free With
UNISONIC TECHNOLOGIES CO., LTD MPSA92/93
UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.