2N7002KTB. 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES MECHANICAL DATA. =25 O C unless otherwise noted )
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1 6V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES R R Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS2. (2/65/EU & 25/865/EU directive) Green molding compound as per IEC6249 Std.. (Halogen Free).3(.33).9(.23).52(.3).43(.).67(.7).59(.5).44(.).35(.9).67(.7).59(.5).7(.7).2(.7).24(.6).9(.5) MECHANICAL DATA Case: SOT-523 Package Terminals: Solderable per MIL-STD-75,Method 226 Approx. Weight:.7 ounces,.2 grams Marking: 27.2(.3).4(.) Maximum RATINGS and Thermal Characteristics (T A =25 O C unless otherwise noted ) PARAMETER Symbol Limit Units Drain-Source Voltage 6 V Gate-Source Voltage +2 V Continuous Drain Current I D 5 ma Pulsed Drain Current ) I DM 8 ma Maximum Power Dissipation T A =25 O C T A =75 O C P D 2 5 mw Operating Junction and Storage Temperature Range T J,T STG -55 to + 5 O C Junction-to Ambient Thermal Resistance(PCB mounted) 2 R θja 883 O C/W Note:.Maximum DC current limited by the package 2.Surface mounted on FR4 board, t< sec 3.Pulse width<3us, Duty cycle<2% May 25,27-REV.5 PAGE.
2 ELECTRICAL CHARACTERISTICS Static Parameter Symbol Test Condition Min. Typ. Max. Units Drain-Source Breakdown Voltage BS =V, I D =μa V Gate Threshold Voltage (th) =, I D =25μA V Drain-Source On-State Resistance Drain-Source On-State Resistance Zero Gate Voltage Drain Current R DS(on) =4.5V, I D =2mA Ω R DS(on) =V, I D =5mA I DSS =6V, =V - - μa Gate Body Leakage I GSS =+2V, =V μa Forward Transconductance g fs =5V, I D =25mA - - ms Dynamic Total Gate Charge Q g =5V, I D =2mA =4.5V nc Turn-On D elay Ti me td (on) V DD =3V, R L =5Ω I D =2mA, V GEN =V Turn-Off Delay Time td (off) R G =Ω ns Output Capacitance C oss V =25V, VGS =V DS f=.mh Z - - Reverse Transfer Capacitance C rss pf Source-Drain Diode Diode Forward Voltage V SD I S =2mA, =V V Continuous Diode Forward Current Pulsed Diode Forward Current I s ma I sm ma Switching Test Circuit VDD Gate Charge Test Circuit VDD VIN RL VGS RL VOUT RG ma RG May 25,27 REV.5 PAGE. 2
3 O Typical Characteristics Curves (T =25 C,unless otherwise noted) A I D - Drain-to-Source Current (A) = 6.~V 5.V 4.V 4.V.4 3.V.2 3.V Drain-to-Source Voltage (V) Fig. -TYPICAL FIG.- Output FORWARD Characteristic CHARACTERISTIC ID - Drain Source Current (A) =V T =25 J Gate-to-Source Voltage (V) FIG.2- Transfer Characteristic 5 5 R - On-Resistance ( ) DS(ON) =4.5V VGS=V R - On-Resistance ( ) DS(ON) I D D =2mA A I D =5mA I D -DrainCurrent(A) - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage R DS(ON) - On-Resistance(Normalized) =V I D =5mA T J - Junction Temperature ( o C) FIG.5- On Resistance vs Junction Temperature May 25,27 REV.5 PAGE. 3
4 Vgs Vgs(th) Qg(th) Qgs Qg Qsw Qgd Qg - Gate-to-Source Voltage (V) =V I D=25mA Q g -GateCharge(nC) Fig.6 - Gate Charge Waveform Fig.7 - Gate Charge Vth - G-S Threshold Voltage (NORMALIZED).2 I D =25 A T J - Junction Temperature ( o C) BVDSS - Breakdown Voltage (V) 88 ID = 25uA T J - Junction Temperature ( o C) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature IS - Source Current (A). =V T J = V SD - Source-to-Drain Voltage (V) Fig. - Source-Drain Diode Forward Voltage May 25,27 REV.5 PAGE. 4
5 MOUNTING PAD LAYOUT ORDER INFORMATION Packing information T/R - 4K per 7" plastic Reel May 25,27 REV.5 PAGE. 5
6 Part No_packing code_version 2N72KTB_R_ For example : RB5V-4_R2_ Part No. Serial number Version code means HF Packing size code means 3" Packing type means T/R Packing Code XX Version Code XXXXX Packing type st Code Packing size code 2 nd Code HF or RoHS st Code 2 nd ~5 th Code Tape and Ammunition Box (T/B) Tape and Reel (T/R) Bulk Packing (B/P) Tube Packing (T/P) Tape and Reel (Right Oriented) (TRR) Tape and Reel (Left Oriented) (TRL) FORMING A N/A HF serial number R 7" RoHS serial number B 3" 2 T 26mm X S 52mm Y L F PANASERT T/B CATHODE UP (PBCU) PANASERT T/B CATHODE DOWN (PBCD) U D May 25,27 REV.5 PAGE. 6
7 Disclaimer Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. Panjit International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages resulting from such improper use or sale. Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when complaining. May 25,27 REV.5 PAGE. 7
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