2N7002K. 60V N-Channel Enhancement Mode MOSFET - ESD Protected I D T A C C P D T J FEATURES MECHANICAL DATA

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1 6 N-hannel Enhancement Mode MOFET - E Protected FEATURE R R Advanced Trench Process Technology High ensity ell esign For Ultra Low On-Resistance ery Low Leakage urrent In Off ondition pecially esigned for Battery Operated ystems, olid-tate Relays rivers : Relays, isplays, Lamps, olenoids, Memories, etc. E Protected K HBM Lead free in compliance with EU RoH /65/EU directive Green molding compound as per IE649 td.. (Halogen Free).(3.4).(.8).56(.4).47(.).79(.).7(.8).6(.5)MIN..8(.).3(.8) MEHANIAL ATA ase: OT-3 Package Terminals: olderable per MIL-T-75,Method 6 Marking: K7 Approx. Weight:.3 ounce,.84 gram.4(.).(.).(.5).3(.35).44(.).35(.9) Maximum RATING and Thermal haracteristics (T A =5 O unless otherwise noted ) PA RA ME TE R ymb o l Li mi t Uni ts ra i n- o urce Ga te - o urce o lta g e o lta g e 6 G + o nti nuo us ra i n urre nt I 3 ma ) P ulsed ra i n urre nt Ma xi mum Op e ra ti ng Ra ng e P o we r Juncti o n I M T A = 5 O T A = 7 5 O a nd to ra g e Te mp e ra ture i ssi p a ti o n Junction-to Ambient Thermal Resistance(PB mounted) R θ A 3 5 P ma T J, T 5 5 to + 5 TG mw - O J 5 7 O 3 / W Note:.Maximum current limited by the package.urface mounted on FR4 board, t< sec 3.Pulse width<3us, uty cycle<% May 3,5-RE.3 PAGE.

2 ELETRIAL HARATERITI Pa ra me te r ymb o l T e st o nd i ti o n M i n. T yp. Ma x. Uni ts ta ti c ra i n- o urce o lta g e B re a kdown B G =, I = ua Ga te Thre sho ld o lta g e G (th) ra i n- o urce On- ta te Re si sta nce ra i n- o urce On- ta te Re si sta nce Ze ro Ga te o lta g e ra i n urre nt R (o n) R (o n) I Gate Body Leakage IG G G =, I = 5 ua -. 5 G = 4.5, I ma =, I 5mA = 6, G G =+, = = = - - ua = Ω ua Forward ynamic Transconductance g f = 5, I = 5 ma - - m To ta l Ga te ha rg e Q = 5, I = ma g =5 G n Turn- On Ti me Turn- Off Ti me t o n = 3, R = 5Ω - - L I = ma, = GEN R G = Ω o t ff ns Inp ut a p a ci ta nce i ss = 5, = Outp ut a p a ci ta nce G o ss - - f=. MH Z Re ve rse Tra nsfe r a p a ci ta nce rss p F o urce- ra i n i o d e i o d e F o rwa rd o lta g e o nti nuo us urre nt i o d e F o rwa rd P ulse i o d e F o rwa rd urre nt I ma, = G = I ma ma I M witching Test ircuit Gate harge Test ircuit IN RL G RL OUT RG ma RG May 3,5-RE.3 PAGE.

3 O Typical haracteristics urves (T A=5,unless otherwise noted) I - rain-to-ource urrent (A) G= ~ rain-to-ource oltage () Fig. -TYPIAL FIG.- Output FORWAR haracteristic HARATERITI I - rain ource urrent (A). = T J = G - Gate-to-ource oltage () FIG.- Transfer haracteristic 5 5 R (ON) - On-Resistance ( ) 4 3 G =4.5 G= R (ON) - On-Resistance ( ) 4 3 I =ma I =5mA I - rain urrent (A) G - Gate-to-ource oltage () FIG.3- On Resistance vs rain urrent FIG.4- On Resistance vs Gate to ource oltage R (ON) - On-Resistance(Normalized).8 G=.6 I =5mA T J - Junction Temperature ( o ) FIG.5- On Resistance vs Junction Temperature May 3,5-RE.3 PAGE. 3

4 gs gs(th) Qg(th) Qgs Qg Qsw Qgd Qg G - Gate-to-ource oltage () = 8 I =5mA Q g - Gate harge (n) Fig.6 - Gate harge Waveform Fig.7 - Gate harge th - G- Threshold oltage (NORMALIZE) I =5 A B - Breakdown oltage () I = 5 A T J - Junction Temperature ( ) T J - Junction Temperature ( o ) Fig.8 - Threshold oltage vs Temperature Fig.9 - Breakdown oltage vs Junction Temperature I - ource urrent (A). G = T J =5 o -55 o 5 o - apacitance (pf) iss oss f=mhz G = rss ource-to-rain oltage () - rain-to-ource oltage () Fig. - ource-rain iode Forward oltage Fig. - apacitance vs rain to ource oltage May 3,5-RE.3 PAGE. 4

5 MOUNTING PA LAYOUT.35 MIN. (.9) MIN..3 MIN. (.8) MIN..37 (.95).43 (.).78 (.).43 (.).6 (.7) ORER INFORMATION Packing information T/R - K per 3" plastic Reel T/R - 3K per 7" plastic Reel May 3,5-RE.3 PAGE. 5

6 Part No_packing code_ersion N7K_R_ N7K_R_ For example : RB5-4_R_ Part No. erial number ersion code means HF Packing size code means 3" Packing type means T/R Packing ode XX ersion ode XXXXX Packing type st ode Packing size code nd ode HF or RoH st ode nd ~5 th ode Tape and Ammunition Box (T/B) Tape and Reel (T/R) Bulk Packing (B/P) Tube Packing (T/P) Tape and Reel (Right Oriented) (TRR) Tape and Reel (Left Oriented) (TRL) FORMING A N/A HF serial number R 7" RoH serial number B 3" T 6mm X 5mm Y L F PANAERT T/B ATHOE UP (PBU) PANAERT T/B ATHOE OWN (PB) U May 3,5-RE.3 PAGE. 6

7 isclaimer Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. Panjit International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Applications shown on the herein document are examples of standard use and operation. ustomers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages resulting from such improper use or sale. ince Panjit uses lot number as the tracking base, please provide the lot number for tracking when complaining. May 3,5-RE.3 PAGE. 7

=25 O C unless otherwise noted ) T A C C P D T PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

=25 O C unless otherwise noted ) T A C C P D T PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE 6 N-hannel Enhancement Mode MOSFET - ES Protected FEATURES R S(ON), GS @,I S @ma=ω R S(ON), GS @.,I S @ma=ω Advanced Trench Process Technology High ensity ell esign For Ultra Low On-Resistance ery Low

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