=25 O C unless otherwise noted ) T A C C P D T PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Transcription

1 6 N-hannel Enhancement Mode MOSFET - ES Protected FEATURES R S(ON), R S(ON), Advanced Trench Process Technology High ensity ell esign For Ultra Low On-Resistance ery Low Leakage urrent In Off ondition Specially esigned for Battery Operated Systems, Solid-State Relays rivers : Relays, isplays, Lamps, Solenoids, Memories, etc. ES Protected K HBM omponent are in compliance with EU RoHS /9/E directives MEHANIAL ATA ase: SOT-6 Package Terminals : Solderable per MIL-ST-7,Method 6 Marking : K7 6 Maximum RATINGS and Thermal haracteristics (T A = O unless otherwise noted ) PA RA ME TE R Symb o l Li mi t Uni ts ra i n-s o urce o lta g e 6 Ga te -S o urce o lta g e + o nti nuo us ra i n urre nt I ma ) P ulsed ra i n urre nt I M 8 ma Ma xi mum P o we r i ssi p a ti o n T A = O T A = 7 O P mw Op e ra ti ng Juncti o n a nd S to ra g e Te mp e ra ture Ra ng e T J T, to + S T G - O Junction-to Ambient Thermal Resistance(PB mounted) R θ A J O 6 / W Note:. Maximum current limited by the package. Surface mounted on FR board, t < sec PAN JIT RESERES THE RIGHT TO IMPROE PROUT ESIGN,FUNTIONS AN RELIABILITY WITHOUT NOTIE STA-JAN..7 PAGE.

2 ELETRIAL HARATERISTIS Pa ra me te r Symb o l T e st o nd i ti o n M i n. T yp. Ma x. Uni ts S ta ti c ra i n-s o urce B re a kdown o lta g e B S S =, I = ua Ga te Thre sho ld o lta g e S ( t h ) G S =, I = ua -. ra i n-s o urce On-S ta te Re si sta nce R S ( o n ) ra i n-s o urce On-S ta te Re si sta nce R S ( o n ) GS GS =., I ma = - -. =, I ma = - -. Ω Ze ro Ga te o lta g e ra i n urre nt I S S = 6, = - - ua GS Gate Body Leakage I S S G S G =+, S = ua Forward Transconductance g f S =, I = ma - - ms i o d e F o rwa rd o lta g e S I S ma, = = -.8. ynamic To ta l Ga te ha rg e Q S =, I = ma g =. GS n Turn-On e la y Ti me to n =, R = Ω - - L I = ma, = GE N Turn-Off e la y Ti me t R G = Ω - - o f f ns Inp ut a p a ci ta nce i s s - - =, = Outp ut a p a ci ta nce o s s - - f=. MH Z p F Re ve rse Tra nsfe r a p a ci ta nce r s s - - Switching Test ircuit Gate harge Test ircuit IN RL GS RL OUT RG ma RG STA-JAN..7 PAGE.

3 O Typical haracteristics urves (T A=,unless otherwise noted) I - rain-to-source urrent (A) GS= ~ S - rain-to-source oltage () Fig. -TYPIAL FIG.- Output FORWAR haracteristic HARATERISTI I - rain Source urrent (A). S =.8.6. T J = O. 6 GS - Gate-to-Source oltage () FIG.- Transfer haracteristic R - On-Resistance ( ) S(ON) GS =. GS= R - On-Resistance ( ) S(ON) I =ma I =ma I - rain urrent (A) GS - Gate-to-Source oltage () FIG.- On Resistance vs rain urrent FIG.- On Resistance vs Gate to Source oltage R S(ON) - On-Resistance(Normalized).8 GS=.6 I =ma T J - Junction Temperature ( o ) FIG.- On Resistance vs Junction Temperature STA-JAN..7 PAGE.

4 gs gs(th) Qg(th) Qgs Qg Qsw Qgd Qg GS - Gate-to-Source oltage () S= I =ma Q g -Gateharge(n) Fig.6 - Gate harge Waveform Fig.7 - Gate harge th - G-S Threshold oltage (NORMALIZE) I =ua T J - Junction Temperature ( o ) BSS - Breakdown oltage () I =ua T J - Junction Temperature ( o ) Fig.8 - Threshold oltage vs Temperature Fig.9 - Breakdown oltage vs Junction Temperature IS - Source urrent (A). GS= T J= O O - O S - Source-to-rain oltage () Fig. - Source-rain iode Forward oltage STA-JAN..7 PAGE.

5 MOUNTING PA LAYOUT ORER INFORMATION Packing information T/R - K per " plastic Reel T/R - K per 7 plastic Reel LEGAL STATEMENT opyright PanJit International, Inc 7 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STA-JAN..7 PAGE.