UNISONIC TECHNOLOGIES CO., LTD MMBT4401
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1 UNISONIC TECHNOLOGIES CO., LTD MMBT441 NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION The UTC MMBT441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. 2 1 SOT-23 (JEDEC TO-236) SOT-323 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing MMBT441G-AE3-R SOT-23 E B C Tape Reel MMBT441G-AL3-R SOT-323 E B C Tape Reel Note: Pin Assignment: E: Emitter B: Base C: Collector MARKING 1 of 6 Copyright 216 Unisonic Technologies Co., Ltd
2 ABSOLUTE MAXIMUM RATING (T A =25 C, unless otherwise specified) (Note) PARAMETER SYMBOL RATINGS UNIT Collector-Base oltage CBO 6 Collector-Emitter oltage CEO 4 Emitter-Base oltage EBO 6 Collector Current-Continuous I C 6 ma Total Device Dissipation 35 mw P D Derate above 25 C 2.8 mw/ C Junction Temperature T J +15 C Storage Temperature T STG -4 ~ +15 C Note: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (T A =25 C, unless otherwise specified) CHARACTERISTIC SYMBOL RATING UNIT Junction to Ambient θ JA 357 C/W ELECTRICAL CHARACTERISTICS (T A =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown oltage B CBO I C =.1mA, I E = 6 Collector-Emitter Breakdown oltage (note) B CEO I C =1mA, I B = 4 Emitter-Base Breakdown oltage B EBO I E =.1mA, I C = 6 Collector Cut-off Current I CEX CE =35, EB =.4 µa Base Cut-off Current I BL CE =35, EB =.4 µa ON CHARACTERISTICS (note) h FE1 CE =1, I C =.1mA 2 h FE2 CE =1, I C =1mA 4 DC Current Gain h FE3 CE =1, I C =1mA 8 h FE4 CE =1, I C =15mA 1 3 h FE5 CE =2, I C =5mA 4 Collector-Emitter Saturation oltage Base-Emitter Saturation oltage CE(SAT1 ) CE(SAT2) BE(SAT1) BE(SAT2) I C =15mA, I B =15mA I C =5mA, I B =5mA I C =15mA, I B =15mA I C =5mA, I B =5mA SMALL SIGNAL CHARACTERISTICS1 Current Gain Bandwidth Product f T CE =1, I C =2mA, f=1mhz 25 MHz Collector-Base Capacitance C CB CB =5, I E =, f=14khz 6.5 pf Emitter-Base Capacitance C EB BE =.5, I C =, f=14khz 3 pf Input Impedance h IE CE =1, I C =1mA, f=1khz 1 15 kω oltage Feedback Ratio h RE CE =1, I C =1mA, f=1khz Small-Signal Current Gain h FE CE =1, I C =1mA, f=1khz 4 5 Output Admittance h OE CE =1, I C =1mA, f=1khz 1 3 µmhos SWITCHING CHARACTERISTICS Delay Time t D CC =3, EB =2, I C =15mA I B1 =15mA 15 ns CC =3, EB =2, I C =15mA Rise Time t R I B1 =15mA 2 ns Storage Time t S 225 ns Fall Time t F CC =3, I C =15mA I B1 = I B2 =15mA 3 ns Note: Pulse test: PulseWidth 3 s, Duty Cycle 2% UNISONIC TECHNOLOGIES CO., LTD 2 of 6.75
3 TEST CIRCUIT 22ns 16 1KΩ 5Ω 3 2Ω Figure1. Saturated Turn-On Switching Timer Note:B EBO =5 3 22ns 1KΩ 5Ω 1k 37Ω Figure2. Saturated Turn-Off Switching Timer UNISONIC TECHNOLOGIES CO., LTD 3 of 6
4 TYPICAL CHARACTERISTICS Typical Pulsed Current Gain, hfe Typical Pulsed Current Gain 125 C 25 C -4 C CE = Collector-Emitter oltage, CESAT () Collector-Emitter Saturation oltage.4 β= C.2 25 C.1-4 C Base-Emitter oltage, BESAT () Base-Emitter Onoltage, BEON () 5 1 Collector-Cutoff Current vs Ambient Temperature CB =4 Emitter Transition and Output Capacitance vs Reverse Bias oltage 2 f=1mhz C te.1 8 C ob Ambient Temperature, T A ( ) Reverse Bias oltage () UNISONIC TECHNOLOGIES CO., LTD 4 of 6
5 TYPICAL CHARACTERISTICS(Cont.) 4 Turn On and Turn Off Times 4 Switching Times CC =25 I B1 =I B2 = I C CC =25 I B1 =I B2 = I C t S 8 t on t off t F t R t D Char.Relative To oltage at TA=25 Char.Relative To oltage at CE=1 Power Dissipation, PD (W) Char.Relative To oltage At IC=1mA UNISONIC TECHNOLOGIES CO., LTD 5 of 6
6 TYPICAL CHARACTERISTICS(Cont.) DC S.O.A 1S 1mS CE, Collector-Emitter oltage (olts) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 6 of 6
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UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
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UNISONIC TECHNOLOGIES CO., LTD 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-263 1 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power
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UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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