N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) SOP-8 A D
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1 SM Type N-Channel Enhancement Features VS (V) = 30V SOP-8 I = 6 A (VGS = 0V) RS(ON) < 6.8mΩ (VGS = 0V) HEXFET Power S 8 A S S G 4 5 Absolute Maximum Ratings Ta = 25 Parameter rain-source Voltage Gate-Source Voltage Continuous rain Current Pulsed rain Current Avalanche Current Single Pulse Avalanche Energy Power issipation Thermal Resistance.Junction- to-ambient Thermal Resistance.Junction- to-case Junction Temperature Storage Temperature Range Symbol Rating Unit VS 30 VGS ±20 TA=25 6 TA=70 2 I IM 20 IAR 2 EAS 72 mj TA= P TA=70.6 RthJA 50 RthJC 20 V A W /W TJ 50 Tstg -55 to 50
2 SM Type N-Channel Enhancement Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit rain-source Breakdown Voltage VSS I=250μA, VGS=0V 30 V Zero Gate Voltage rain Current ISS VS=24V, VGS=0V VS=24V, VGS=0V, TJ=25 50 μa Gate-Body Leakage Current IGSS VS=0V, VGS=±20V ±00 na Gate Threshold Voltage VGS(th) VS=VGS, I=250μA V Static rain-source On-Resistance RS(On) VGS=0V, I=6A mω VGS=4.5V, I=3A Forward Transconductance gfs VS=5V, I=2A 64 S Input Capacitance Ciss 2080 Output Capacitance Coss VGS=0V, VS=5V, f=mhz 480 pf Reverse Transfer Capacitance Crss 220 Gate Resistance Rg VGS=0V, VS=0V, f=mhz.0 2. Ω Total Gate Charge Qg 8 27 Gate Source Charge Qgs 4.7 Gate Source Charge Qgs2.6 VGS=4.5V, VS=5V, I=2A Gate rain Charge Qgd 6.2 nc Gate Charge Overdrive Qgodr 5.5 Switch Charge(Qgd+Qgs2) QSW 7.8 Output Charge QOSS VGS=0V, VS=6V 0 Turn-On elaytime td(on) Turn-On Rise Time tr 0 VGS=4.5V, VS=5V,I=2A Turn-Off elaytime td(off) 4 ns Turn-Off Fall Time tf 3.7 Body iode Reverse Recovery Time trr IF= 2A, di/dt= 00A/μs,V=5V Body iode Reverse Recovery Charge Qrr nc Maximum Body-iode Continuous Current IS 3. Pulsed Source Gurrent ISM 20 A iode Forward Voltage VS IS=2A,VGS=0V V 2
3 R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) SM Type N-Channel Enhancement V 0 2.5V 0. 20µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) 20µs PULSE WITH Tj = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I = 6A V GS = 0V I, rain-to-source Current (Α) 00.5 T J = 50 C 0.0 T J = 25 C V S = 5V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 I S, Reverse rain Current (A) I, rain-to-source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) SM Type N-Channel Enhancement 0000 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd 2 0 I = 2A V S = 24V VS= 5V Ciss Coss 4 Crss V S, rain-to-source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITE BY R S (on) T J = 50 C. 0 00µsec T.0 J = 25 C V GS = 0V V S, Source-torain Voltage (V) msec 0msec Tc = 25 C Tj = 50 C Single Pulse V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 I, rain Current (A) V GS(th) Gate threshold Voltage (V) SM Type N-Channel Enhancement I = 250µA T J, Junction Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature T J, Temperature ( C ) Fig 0. Threshold Voltage Vs. Temperature 00 Thermal Response ( Z thja ) = SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri E-006 E t, Rectangular Pulse uration (sec) R 4 R 4 τ C τ τ 4 τ Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Ri ( C/W) τi (sec) 5
6 E A S, Single Pulse Avalanche Energy (mj) SM Type N-Channel Enhancement R S (on), rain-to -Source On Resistance (Ω) I TOP 6.0A 6.9A BOTTOM 2A T J = 25 C 00 T J = 25 C V GS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On-Resistance Vs. Gate Voltage Fig 3c. Maximum Avalanche Energy Vs. rain Current 6
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
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TSA20N60S, TSK20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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General Description uses advanced trench technology to provide excellent Rds(on) and low gate charge. Complementary MOSFET Features N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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AN-1001 Understanding Power MOSFET Parameters www.taiwansemi.com Content 1. Absolute Maximum Ratings... 3 1.1 rain-source Voltage (VS)... 3 1.2 Gate-Source Voltage (VGS)... 3 1.3 Continuous rain Current
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General Description ELM66EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. Maximum Absolute Ratings ELM66EA-S N-channel P-channel Vds=V Vds=-V Id=3.A(Vgs=.V) Id=-.A(Vgs=-.V)
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PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
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PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
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PD - 96227B Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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PD-96958B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 2N7582T IRHMS6764 5V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS6764 K Rads (Si).9Ω 45A*
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Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
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TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET Power MOSFET R DS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l l
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
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IRF794PbF HEXFET Power MOSFET V DS 3 V R DS(on) max Q (@V GS = V).2 R DS(on) max Q2 (@V GS = V).8 Q g (typical) Q 7.5 Q g (typical) Q2 4 I D(@TA = 25 C)Q 7. I D(@TA = 25 C)Q2 mω nc A G S2 S2 G2 2 3 4 8
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Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode Ideal for Synchronous Buck DC-DC Converters Up to A Peak Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier D D 2
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
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