NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 May 994 NP78A / NP78AE / NP78B / NP78BE NB78A / NB78AE / NB78B / NB78BE N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-channel enhancement mode power field 6 and 54A, 8V. R S(ON) =. and.5ω. effect transistors are produced using Fairchild's Critical C electrical parameters specified at proprietary, high cell density, MOS technology. This elevated temperature. very high density process has been especially tailored to minimize on-state resistance, provide Rugged internal source-drain diode can eliminate the need for an external Zener diode transient superior switching performance, and withstand high suppressor. energy pulses in the avalanche and commutation modes. These devices are particularly suited for low 75 C maximum junction temperature rating. voltage applications such as automotive, C/C High density cell design (3 million/in²) for extremely converters, PWM motor controls, and other battery low R S(ON). powered circuits where fast switching, low in-line TO- and TO-63 ( PAK) package for both power loss, and resistance to transients are needed. through hole and surface mount applications. G S Absolute Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter NP78A NP78AE NB78A NB78AE NP78B NP78BE NB78B NB78BE V SS rain-source Voltage 8 V V GR rain-gate Voltage (R GS < MΩ) 8 V S Gate-Source Voltage - Continuous ± V - Nonrepetitive (t P < 5 µs) ±4 V I rain Current - Continuous 6 54 A - Pulsed 8 6 A P Total Power T C = 5 C 5 W Units erate above 5 C W/ C,T STG Operating and Storage Temperature Range -65 to 75 C T L Maximum lead temperature for soldering purposes, /8" from case for 5 seconds 75 C 997 Fairchild Semiconductor Corporation NP78.SAM

2 Electrical Characteristics (T C = 5 C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units RAIN-SOURCE AVALANCHE RATINGS (Note ) E AS Single Pulse rain-source Avalanche Energy V = 5 V, I = 6 A NP78AE NP78BE NB78AE NB78BE 6 mj I AR Maximum rain-source Avalanche Current 6 A OFF CHARACTERISTICS BV SS I SS rain-source Breakdown Voltage Zero Gate Voltage rain Current = V, I = 5 µa ALL 8 V V S = 8 V, = V ALL 5 µa = 5 C ma I GSSF Gate - Body Leakage, Forward = V, V S = V ALL na I GSSR Gate - Body Leakage, Reverse = - V, V S = V ALL - na ON CHARACTERISTICS (Note ) (th) Gate Threshold Voltage V S =, I = 5 µa R S(ON) Static rain-source On-Resistance = V, I = 3 A = V, I = 7 A I (on) On-State rain Current = V, V S = V NP78A NP78AE NB78A NB78AE ALL.6 4 V = 5 C V NP78A.6. Ω = 5 C NP78AE NB78A NB78AE.5.4 Ω NP78B.5 Ω = 5 C NP78BE NB78B NB78BE.44 Ω NP78B NP78BE NB78B NB78BE 6 A 54 A g FS Forward Transconductance V S = V, I = 3 A ALL 6 33 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = 5 V, = V, ALL 8 36 pf f =. MHz C oss Output Capacitance ALL 78 pf C rss Reverse Transfer Capacitance ALL 85 4 pf NP78.SAM

3 Electrical Characteristics (T C = 5 C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note ) t (ON) Turn - On elay Time V = 4 V, I = 6 A, ALL 5 5 ns t r Turn - On Rise Time = V, R GEN = 5 Ω ALL 43 3 ns t (OFF) Turn - Off elay Time ALL 58 9 ns t f Turn - Off Fall Time ALL 8 8 ns Q g Total Gate Charge V S = 64 V, ALL 94 3 nc Q gs Gate-Source Charge I = 6 A, = V ALL 6 nc Q gd Gate-rain Charge ALL 5 nc RAIN-SOURCE IOE CHARACTERISTICS I S Maximum Continuos rain-source iode Forward Current NP78A NP78AE NB78A NB78AE NP78B NP78BE NB78B NB78BE I SM Maximum Pulsed rain-source iode Forward Current NP78A NP78AE NB78A NB78AE V S (Note ) rain-source iode Forward Voltage = V, I S = 3 A NP78B NP78BE NB78B NB78BE 6 A 54 A 8 A 6 A ALL.9.3 V = 5 C. V t Reverse Recovery Time V rr GS = V, I S = 6 A, ALL 98 4 ns di S /dt = A/µs I Reverse Recovery Current ALL 6.5 A rr THERMAL CHARACTERISTICS R θjc Thermal Resistance, Junction-to-Case ALL C/W R θja Thermal Resistance, Junction-to-Ambient ALL 6.5 C/W Notes:. NP78A/78B and NB78A/78B are not rated for operation in avalanche mode.. Pulse Test: Pulse Width < 3 µs, uty Cycle <.%. NP78.SAM

4 Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) = V V, RAIN-SOURCE VOLTAGE (V) S Figure. On-Region Characteristics. R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = 5V GS I, RAIN CURRENT (A) Figure. On-Resistance Variation with Gate Voltage and rain Current R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.4.6. I = 3A = V T, JUNCTION TEMPERATURE ( C) J Figure 3. On-Resistance Variation with Temperature. R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = V GS T = 5 C J 5 C -55 C I, RAIN CURRENT (A) Figure 4. On-Resistance Variation with rain Current and Temperature. I, RAIN CURRENT (A) V S = V T = -55 C J Figure 5. Transfer Characteristics. 5 V, GATE TO SOURCE VOLTAGE (V) GS 5 V th, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE (V) V = V S GS I = 5µA T J, JUNCTION TEMPERATURE ( C) Figure 6. Gate Threshold Variation with Temperature. NP78.SAM

5 S Typical Electrical Characteristics (continued) BV SS, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE (V) I = 5µA T J, JUNCTION TEMPERATURE ( C) Figure 7. Breakdown Voltage Variation with Temperature. I, REVERSE RAIN CURRENT (A) 5. = V T = 5 C J 5 C -55 C V, BOY IOE FORWAR VOLTAGE (V) S Figure 8. Body iode Forward Voltage Variation with Current and Temperature. CAPACITANCE (pf) f = MHz = V C iss C oss C rss, GATE-SOURCE VOLTAGE (V) 5 5 I = 6A V S= V V, RAIN TO SOURCE VOLTAGE (V) S Figure 9. Capacitance Characteristics Q, GATE CHARGE (nc) g Figure. Gate Charge Characteristics. V t on t off V IN R L t d(on) tr 9% t d(off) 9% t f R GEN G UT V OUT Output, Vout Input, Vin % 5% % 9% 5% Inverted S % Pulse Width Figure. Switching Test Circuit. Figure. Switching Waveforms. NP78.SAM

6 Typical Electrical Characteristics (continued) g, TRANSCONUCTANCE (SIEMENS) FS T = -55 C J 5 C 5 C V S = V I, RAIN CURRENT (A) = V t p t is adjusted to reach p the desired peak inductive current, I. L t p I L L + V - BV SS V Figure 3. Transconductance Variation with rain Current and Temperature. Figure 4. Unclamped Inductive Load Circuit and Waveforms. 3 RS(ON) Limit µs µs I, RAIN CURRENT (A) 5 = V SINGLE PULSE T C = 5 C ms ms ms C V S, RAIN-SOURCE VOLTAGE (V)) Figure 5. Maximum Safe Operating Area. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE =.5 Single Pulse R θjc (t) = r(t) * R θjc R =. C/W θjc - T = P * R (t) C θjc uty Cycle, = t /t t,time (ms) P(pk) t t Figure 6. Transient Thermal Response Curve. NP78.SAM

7 This datasheet has been downloaded from: atasheets for electronic components.