P-Channel MOSFET KI2955DV. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage. Tstg -55 to 150

Transcription

1 P-Channel ( SOT--6 ) Unit: mm. -. Features 6. VS (V) =-6V I =-. A (VGS =-V) RS(ON) < 9mΩ (VGS =-V) RS(ON) < mω (VGS =-.V) G S Absolute Maximum Ratings Ta = Parameter Symbol Rating Unit rain-source Voltage Gate-Source Voltage Continuous rain Current VS -6 VGS ± Ta = -. I Ta = -. Pulsed rain Current (Note.) IM - Power issipation P.6 W Linear erating Factor. W/ Thermal Resistance.Junction- to-ambient (Note.) RthJA 78 /W Junction Temperature TJ Junction Storage Temperature Range Tstg - to Note.:Pulse Width μs, uty Cycle % Note.:.Surface mounted on in² copper pad of FR- board. 6/W when mounted on minimum copper pad. V A

2 P-Channel Electrical Characteristics Ta = Parameter Symbol Test Conditions Min Typ Max Unit rain-source Breakdown Voltage VSS I=-μA, VGS=V -6 V Zero Gate Voltage rain Current ISS VS=-8V, VGS=V ua VS=-8V, VGS=V, TJ=7 Gate-Body leakage current IGSS VS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VS=VGS I=-μA - -. V Static rain-source On-Resistance RS(On) VGS=-V, I=-A 9 mω VGS=-.V, I=-.7A Forward Transconductance gfs VS=-V, I=-A.8 S Input Capacitance Ciss 99 Output Capacitance Coss VGS=V, VS=-V, f=mhz 8 pf Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs VGS=-V, VS=-V, I=-.A nc Gate rain Charge Qgd. Turn-On elaytime td(on) Turn-On Rise Time tr VGS=-V, VS=-V, I=-A,RG=6Ω Turn-Off elaytime td(off) 7 ns Turn-Off Fall Time tf Body iode Reverse Recovery Time trr IF=-A, VGS=V, di/dt=a/μs Body iode Reverse Recovery Charge Qrr 7 nc Maximum Body-iode Continuous Current IS -. A Body-iode Pulsed Current ISM - iode Forward Voltage VS IS=-A,VGS=V -. V Note:Pulse Test : Pulse Width μs, uty Cycle %

3 P-Channel -I, rain Current (A) V 9V 8V 7V 6V.V Typical Output Characteristics -VGS =V -VGS =.V -VGS =V -VGS =.V -VS, rain-source Voltage(V) -BVSS, Normalized rain-source Breakdown Voltage Brekdown Voltage vs Ambient Temperature I=-u A, VGS =V Static rain-source On-State resistance vs rain Current Reverse rain Current vs Source-rain Voltage RS(on), Static rain-source On-State Resistance(mΩ) V GS =-V V GS =-.V V GS=-.V V GS =-V V GS =-V -VS, Source-rain Voltage(V) V GS =V Tj= C Tj= C.. -I, rain Current(A) IR, Reverse rain Current (A) RS(ON), Static rain-source On- State Resistance(mΩ) Static rain-source On-State Resistance vs Gate-Source Voltage I=-A I=-.7A 6 8 -VGS, Gate-Source Voltage(V) RS(ON), Normalized Static rain- Source On-State Resistance rain-source On-State Resistance vs Junction Tempearture V GS =-V, I =-A V GS =-.V, I =-.7A

4 P-Channel Capacitance---(pF) Capacitance vs rain-to-source Voltage Crss Ciss C oss. -VS, rain-source Voltage(V) -VGS(th), Normalized Threshold Voltage Threshold Voltage vs Junction Tempearture. I=-μA GFS, Forward Transfer Admittance-(S). Forward Transfer Admittance vs rain Current V S =-V Pulsed Ta= C -VGS, Gate-Source Voltage(V) 8 6 Gate Charge Characteristics V S=-8V V S =-V V S =-V I=-.A I, rain Current(A) Qg, Total Gate Charge(nC) Maximum Safe Operating Area Maximum rain Current vs JunctionTemperature -I, rain Current (A). R S(ON) Limit TA= C, Tj= C RθJA=78 C/W, VGS =-V Single Pulse μs ms ms ms s C I, Maximum rain Current(A).... TA = C, VGS =-V, RθJA=78 C/W... -VS, rain-source Voltage(V) 7 7

5 P-Channel Transient Thermal Response Curves r(t), Normalized EffectiveTransient Thermal Resistance.. = Single Pulse.RθJA (t)=r(t)*rθja.uty Factor, =t/t.tjm-ta=pm*rθja(t).rθja=78 C/W..E-.E-.E-.E-.E+.E+.E+.E+ t, Square Wave Pulse uration(s)