RU7088 N-Channel Advanced Power MOSFET MOSFET Features Pin Description Applications

Transcription

1 N-Channel Advanced Power MOSFET MOSFET Features 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V I DS =40A Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications TO-220 TO-263 TO-220F TO-247 Switching Application Systems Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T A=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 70 V GSS Gate-Source Voltage ±25 T J Maximum Junction Temperature 175 C T STG Storage Temperature Range -55 to 175 C I S Diode Continuous Forward Current T C =25 C 80 A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested T C =25 C 320 A I D P D Continuous Drain Current Maximum Power Dissipation T C =25 C 80 1 T C =100 C 60 T C =25 C 150 T C =100 C 80 R θjc Thermal Resistance-Junction to Case 1.4 C/W Drain-Source Avalanche Ratings E AS Avalanche Energy, Single Pulsed 150 mj V A W TEL: FAX:

2 Electrical Characteristics (T A =25 C Unless Otherwise Noted) Symbol Parameter Test Condition RU7088 Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =-250µA 70 V I DSS Zero Gate Voltage Drain Current V DS = 70V, V GS =0V 1 T J =85 C 30 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-250µA V I GSS Gate Leakage Current V GS =±25V, V DS =0V ±100 na R DS(ON) 2 Drain-Source On-state Resistance VGS = 10V, I DS =40A mω Diode Characteristics V SD 2 Diode Forward Voltage ISD =20 A, V GS =0V V trr Reverse Recovery Time ISD=40A, dlsd/dt=100a/µs 50 ns Reverse Recovery Charge 95 nc Qrr Dynamic Characteristics 3 R G Gate Resistance V GS =0V,V DS =0V,F=1MHz 1.4 Ω C iss Input Capacitance VGS=0V, 3100 C oss Output Capacitance VDS= 30V, 440 Reverse Transfer Capacitance Frequency=1.0MHz 260 C rss t d(on) Turn-on Delay Time t r Turn-on Rise Time VDD=30V, RL=30Ω, IDS= 1A, VGEN= 10V, t d(off) Turn-off Delay Time RG=8Ω Turn-off Fall Time t f Gate Charge Characteristics 3 Q g Total Gate Charge Q gs Gate-Source Charge VDS=30V, VGS= 10V, IDS=40A 14 Gate-Drain Charge 25 Q gd µa pf ns nc Notes: 1Current limited by wire bond. 2Pulse test ; Pulse width 300µs, duty cycle 2%. 3Guaranteed by design, not subject to production testing. 2

3 Typical Characteristics Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) T j - Junction Temperature ( C) T j - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 3

4 Typical Characteristics Output Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mω) V DS - Drain-Source Voltage (V) I D - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (m ) Normalized Threshold Voltage V GS - Gate-Source Voltage (V) 4 T j - Junction Temperature ( C)

5 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) T j - Junction Temperature ( C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) VGS - Gate-Source Voltage (V) V DS - Drain-Source Voltage (V) 5 Q G - Gate Charge (nc)

6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms 6

7 Ordering and Marking Information RU7088 Package (Available) R : TO-220; S: TO-263 ; P: TO-220F Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel 7

8 Package Information TO-220FB-3L SYMBOL MM INCH MM INCH MIN NOM MAX MIN NOM MAX SYMBOL MIN NOM MAX MIN NOM MAX A Øp A e 2.54BSC 0.1BSC A e1 5.08BSC 0.2BSC b H b L C L D L2 2.50REF REF. D Øp DEP Q E θ E θ E ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS 8

9 TO-263-2L SYMBOL MM INCH MM INCH MIN NOM MAX MIN NOM MAX SYMBOL MIN NOM MAX MIN NOM MAX A L A L A L b L4 0.25BSC 0.01BSC b L2 2.50REF REF. c θ C θ D θ E DEP e 2.54BSC 0.1BSC Øp H ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS 9

10 TO-220F-3L SYMBOL MM INCH MM INCH MIN NOM MAX MIN NOM MAX SYMBOL MIN NOM MAX MIN NOM MAX E Øp A θ A θ A DEP A F A F c F D G Q G H G e 2.54BSC 0.1BSC b Øp b L b D E Øp K Øp ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS 10

11 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755)