RU30D20H. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. S2 Dual N-Channel MOSFET

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1 N-Channel Advanced Power MOSFET Features 3V/2A, R DS (ON) =mω(typ.)@v GS =V R DS (ON) =2mΩ(Typ.)@V GS =4.V Fast Switching Speed Low gate Charge % avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems G Pin Description D2 D2 D D pin SOP-8 D G2 S G G2 S2 D2 Absolute Maximum Ratings S S2 Dual N-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T A =2 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±6 V T J Maximum Junction Temperature C T STG Storage Temperature Range - to C I S Diode Continuous Forward Current T A =2 C 2 A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T A =2 C 8 A I D 2 T A =2 C 2 Continuous Drain Current(V GS =4.V) A T A =7 C 3 P D Maximum Power Dissipation T A =2 C 3. T A =7 C 2.3 W R JC Thermal Resistance-Junction to Case - C/W R JA 3 Thermal Resistance-Junction to Ambient C/W Drain-Source Avalanche Ratings E AS 4 Avalanche Energy, Single Pulsed - mj Rev. A July., 27

2 Electrical Characteristics (T A =2 C Unless Otherwise Noted) RU3D2H Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =2µA 3 V I DSS V DS =3V, V GS =V Zero Gate Voltage Drain Current µa T J =2 C 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =2µA 2. V I GSS Gate Leakage Current V GS =±6V, V DS =V ± na R DS(ON) V GS =V, I DS =A 2 mω Drain-Source On-state Resistance VGS =4.V, I DS =8A 2 4 mω Diode Characteristics V SD Diode Forward Voltage I SD =2A, V GS =V.3 V trr Reverse Recovery Time 24 ns ISD=2A, dlsd/dt=a/µs Qrr Reverse Recovery Charge 3 nc Dynamic Characteristics 6 R G Gate Resistance V GS =V,V DS =V,F=MHz Ω C iss Input Capacitance V GS =V, 93 C oss Output Capacitance V DS =V, Frequency=.MHz 23 pf C rss Reverse Transfer Capacitance 9 t d(on) Turn-on Delay Time 8 t r Turn-on Rise Time V DD =V,I DS =2A, t d(off) Turn-off Delay Time V GEN =V,R G =3Ω 7 ns t f Turn-off Fall Time 6 Gate Charge Characteristics 6 Q g Total Gate Charge 8 Q gs Gate-Source Charge V DS =24V, V GS =V, I DS =2A Q gd Gate-Drain Charge 7 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. 3When mounted on inch square copper board, t sec. The value in any given application depends on the user's specific board design. 4Limited by T Jmax. Starting T J = 2 C. Pulse test;pulse width 3µs, duty cycle 2%. 6Guaranteed by design, not subject to production testing. Rev. A July.,

3 Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU3D2H RU3D2H SOP-8 Tape&Reel 2 3 2mm Rev. A July.,

4 Typical Characteristics 3 Power Dissipation 6 Drain Current 4 P D -Power (W) I D - Drain Current (A) V GS =V T J - Junction Temperature ( C) T J - Junction Temperature ( C) I D - Drain Current (A) R DS(ON) limited Safe Operation Area DC µs µs ms ms T A =2 C.. R DS(ON) - On - Resistance (mω) Drain Current I DS =A V DS - Drain-Source Voltage (V) V GS - Gate-Source Voltage (V) ZthJA - Thermal Response ( C/W) Thermal Transient Impedance Duty=.,.2,.,.,.2,., Single Pulse Single Pulse R θja = C/W..... Square Wave Pulse Duration (sec) Rev. A July.,

5 Typical Characteristics Output Characteristics 3 Drain-Source On Resistance I D - Drain Current (A) V 6V 4.V 4V 3.V 3V R DS(ON) - On Resistance (mω) 2 2 V GS =4.V V GS =V V DS - Drain-Source Voltage (V) I D - Drain Current (A) Normalized On Resistance V GS =V I DS =A Drain-Source On Resistance. T J =2 C Rds(on)=mΩ T J - Junction Temperature ( C) I S - Source Current (A). Source-Drain Diode Forward T J = C T J =2 C V SD - Source-Drain Voltage (V) C - Capacitance (pf) Capacitance Frequency=.MHz Ciss Coss Crss V DS - Drain-Source Voltage (V) V GS - Gate-Source Voltage (V) V DS =24V I DS =2A Gate Charge 2 Q G - Gate Charge (nc) Rev. A July., 27

6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Rev. A July.,

7 Package Information SOP-8 θ SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A A A b c.7 *.26.7 *. D E E e.27 BSC. BSC L θ * 8 * 8 Rev. A July.,

8 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-7) FAX: (86-7) Rev. A July.,