60 V GSS Gate-Source Voltage. 175 C T STG Storage Temperature Range. -55 to 175 C I S Diode Continuous Forward Current
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1 N-Channel Advanced Power MOSFET Features 6V/5A, R DS (ON) =mω(typ.)@vgs=v R DS (ON) =2mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance % avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description D G S Applications Power Management. Switch Applications. Load switch G TO252 D Absolute Maximum Ratings S N-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T C =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 6 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 75 C T STG Storage Temperature Range -55 to 75 C I S Diode Continuous Forward Current T C =25 C 5 A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T C =25 C 2 A I D 2 T C =25 C 5 Continuous Drain Current(V GS =V) A T C = C 36 P D Maximum Power Dissipation T C =25 C 7 T C = C 36 W R JC Thermal Resistance-Junction to Case 2. C/W R JA Thermal Resistance-Junction to Ambient C/W Drain-Source Avalanche Ratings E AS 3 Avalanche Energy, Single Pulsed mj Rev. A JUL., 28
2 Electrical Characteristics (T C =25 C Unless Otherwise Noted) RU65L Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25µA 6 V I DSS V DS =6V, V GS =V Zero Gate Voltage Drain Current µa T J =25 C 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µA 3 V I GSS Gate Leakage Current V GS =±2V, V DS =V ± na R DS(ON) 4 Diode Characteristics V SD 4 V GS =V, I DS =5A 4 mω Drain-Source On-state Resistance V GS =4.5V, I DS =35A 2 8 mω Diode Forward Voltage I SD =5A, V GS =V.2 V trr Reverse Recovery Time 32 ns ISD=5A, dlsd/dt=a/µs Qrr Reverse Recovery Charge 39 nc Dynamic Characteristics 5 R G Gate Resistance V GS=V,V DS=V,F=MHz.6 Ω C iss Input Capacitance V GS =V, 67 C oss Output Capacitance V DS =3V, Frequency=.MHz 34 pf C rss Reverse Transfer Capacitance 45 t d(on) Turn-on Delay Time t r Turn-on Rise Time V DD =3V,I DS =5A, 86 t d(off) Turn-off Delay Time V GEN =V,R G =.5Ω 34 ns t f Turn-off Fall Time 26 Gate Charge Characteristics 5 Q g Total Gate Charge 25 Q gs Gate-Source Charge V DS =48V, V GS =V, I DS =5A 9 Q gd Gate-Drain Charge 8 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. 3Limited by TJmax, IAS =2A, VDD = 32V, RG = 5Ω, Starting TJ = 25 C. 4Pulse test;pulse width 3µs, duty cycle 2%. 5Guaranteed by design, not subject to production testing. Rev. A JUL.,
3 Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU65L RU65L TO252 Tape&Reel 25 3'' 6mm Rev. A JUL.,
4 Typical Characteristics 8 Power Dissipation 45 Drain Current P D -Power (W) I D - Drain Current (A) T J - Junction Temperature ( C) R DS(ON) limited Safe Operation Area DC µs µs ms ms T C =25 C.. V DS - Drain-Source Voltage (V) I D - Drain Current (A) R DS(ON) - On - Resistance (mω) VGS=V T J - Junction Temperature ( C) Drain Current V GS - Gate-Source Voltage (V) Ids=5A ZthJC - Thermal Response ( C/W).. Duty=.5,.2,.,.5,.2,., Single Pulse Thermal Transient Impedance Single Pulse. E Square Wave Pulse Duration (sec) R θjc =2. C/W Rev. A JUL.,
5 Typical Characteristics Output Characteristics 2 5 Drain-Source On Resistance I D - Drain Current (A) Vgs=8,9,V 4.5V 3.5V 3V V DS - Drain-Source Voltage (V) R DS(ON) - On Resistance (mω) V V I D - Drain Current (A) Normalized On Resistance V GS =V I DS =5A Drain-Source On Resistance.5 T J =25 C Rds(on)=mΩ T J - Junction Temperature ( C) I S - Source Current (A). Source-Drain Diode Forward T J =5 C T J =25 C V SD - Source-Drain Voltage (V) C - Capacitance (pf) Capacitance Frequency=.MHz Ciss Coss Crss V DS - Drain-Source Voltage (V) V GS - Gate-Source Voltage (V) VDS=48V IDS=5A Gate Charge Q G - Gate Charge (nc) Rev. A JUL.,
6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Rev. A JUL.,
7 Package Information TO252 θ θ θ θ θ2 SYMBOL MM MIN NOM MAX MIN NOM MAX A A * *. * *.4 b b c D D E REF REF E e H REF REF L L L REF.5 BSC.8 REF.2 BSC L L θ * 8 * 8 θ θ Rev. A JUL., INCH
8 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) FAX: (86-755) Rev. A JUL.,
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Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET
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N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and
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General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationSSF2341E. Main Product Characteristics V DSS -20V. R DS(on) 37mΩ (typ.) I D. Features and Benefit. Description
Main Product Characteristics V DSS -20V R DS(on) 37mΩ (typ.) I D -4A 1 SOT-23 Marking and Pin A s s i gnm e nt Schematic Diagram Features and Benefit Advanced MOSFET process technology Ideal for PWM, load
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationUNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET -21A, -40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized
More informationProduct Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A
SIAI N-Channel Enhancement Mode Power MOSFET General Description The S75NF75 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use
More informationP-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationUNISONIC TECHNOLOGIES CO., LTD UTD408
UNISONIC TECHNOLOGIES CO., LTD UTD408 N-CHANNEL ENHANCEMENT MODE FEATURES * R DS(ON) < 18 mω @ V GS =10V, I D =18A R DS(ON) < 27 mω @ V GS =4.5V, I D =10A * Low capacitance * Optimized gate charge * Fast
More informationS2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
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HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
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MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationUNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 2NNPP06 is a complementary enhancement mode MOSFET H-BRIDGE, it uses
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed
More informationPE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)
N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.
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HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
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General Description The MDV1548 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1548 is suitable
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HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
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WSF46 General Description The WSF46 is the highest performance trench with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
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MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
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UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited)
General Description The MDU4N uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU4N is suitable device
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