RU20P7C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. -20V/-5A, R DS (ON) GS =-2.5V
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1 P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S Applications Load Switch Power Management Battery Protection G SOT3-3 D Absolute Maximum Ratings S P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T A =5 C Unless Otherwise Noted) V DSS Drain-Source Voltage - V GSS Gate-Source Voltage ± V T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 C I S Diode Continuous Forward Current T A =5 C - A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T A =5 C - A I D T A =5 C -5 Continuous Drain Current(V GS =-V) A T A =7 C -3. P D Maximum Power Dissipation T A =5 C.3 T A =7 C.8 W R JC Thermal Resistance-Junction to Case - C/W R JA 3 Thermal Resistance-Junction to Ambient C/W Drain-Source Avalanche Ratings E AS 4 Avalanche Energy, Single Pulsed - mj Rev. A MAR., 7
2 Electrical Characteristics (T A =5 C Unless Otherwise Noted) RUP7C Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-5µA - V I DSS V DS =-V, V GS =V - Zero Gate Voltage Drain Current µa T J =5 C -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-5µA V I GSS Gate Leakage Current V GS =±V, V DS =V ± na R DS(ON) 5 V GS =-4.5V, I DS =-5A Drain-Source On-state Resistance VGS =-.5V, I DS =-4A 8 mω 3 38 mω Diode Characteristics 5 V SD Diode Forward Voltage I SD =-A, V GS =V -. V trr Reverse Recovery Time 7 ns ISD=-5A, dlsd/dt=a/µs Qrr Reverse Recovery Charge 3 nc Dynamic Characteristics 6 R G Gate Resistance V GS =V,V DS =V,F=MHz.9 Ω C iss Input Capacitance V GS =V, 64 C oss Output Capacitance V DS =-V, Frequency=.MHz 35 pf C rss Reverse Transfer Capacitance 65 t d(on) Turn-on Delay Time 9 t V r Turn-on Rise Time DD =-V, R L =3.8Ω, 6 I DS =-5A, V GEN =-4.5V, t d(off) Turn-off Delay Time R 45 G =6Ω t f Turn-off Fall Time ns Gate Charge Characteristics 6 Q g Total Gate Charge Q gs Gate-Source Charge V DS =-6V, V GS =-V, I DS =-5A Q gd Gate-Drain Charge 3 nc Notes: Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. 3When mounted on inch square copper board, t sec. The value in any given application depends on the user's specific board design. 4Limited by T Jmax. Starting T J = 5 C. 5Pulse test;pulse width 3µs, duty cycle %. 6Guaranteed by design, not subject to production testing. Rev. A MAR., 7
3 Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RUP7C QXYWW SOT3-3 Tape&Reel 3 7 8mm The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Rev. A MAR., 7 3
4 Typical Characteristics Power Dissipation 6 Drain Current P D -Power (W) -I D - Drain Current (A) T J - Junction Temperature ( C) R DS(ON) limited Safe Operation Area DC µs µs ms ms T A =5 C... -V DS - Drain-Source Voltage (V) R DS(ON) - On - Resistance (mω) -I D - Drain Current (A) VGS=-4.5V T J - Junction Temperature ( C) Drain Current 8 Ids=-5A V GS - Gate-Source Voltage (V) ZthJA - Thermal Response ( C/W) Thermal Transient Impedance Duty=.5,.,.,.5,.,., Single Pulse Single Pulse. R θja = C/W. E Square Wave Pulse Duration (sec) Rev. A MAR., 7 4
5 Typical Characteristics Output Characteristics -I D - Drain Current (A) V -3V -.5V -V -V R DS(ON) - On Resistance (mω) Drain-Source On Resistance -.5V -4.5V V DS - Drain-Source Voltage (V) -I D - Drain Current (A) Normalized On Resistance V GS =-4.5V I D =-5A Drain-Source On Resistance.5 T J =5 C Rds(on)=mΩ T J - Junction Temperature ( C) -I S - Source Current (A). Source-Drain Diode Forward T J =5 C T J =5 C -V SD - Source-Drain Voltage (V) C - Capacitance (pf) Capacitance Frequency=.MHz Ciss Coss Crss -V DS - Drain-Source Voltage (V) -V GS - Gate-Source Voltage (V) VDS=-6V IDS=-5A Gate Charge Q G - Gate Charge (nc) Rev. A MAR., 7 5
6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Rev. A MAR., 7 6
7 EDAAA.eeERUP7C Package Information SOT3-3 LbMIN NOM MAX MIN NOM MAX θcsymbol MM INCH A A A b c D E E e e.8.95 BSC BSC L θ Rev. A MAR., 7 7
8 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) FAX: (86-755) Rev. A MAR., 7 8
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N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationN-Channel Power MOSFET 30V, 185A, 1.8mΩ
TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationTaiwan Goodark Technology Co.,Ltd TGD01P30
TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationDevice Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm
SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSMN01L20Q Logic Level N-Ch Power MOSFET
Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features 0.85A, 200V, R DS(on) =1.35Ω @ V GS =10V Low gate charge: Q g =4nC (Typ.) Fast switching 100% avalanche tested RoHS compliant device D
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TSM33NB4LCR N-Channel Power MOSFET 4V, 2A, 3.3mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested. 75 C Operating Junction Temperature
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Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
More informationMDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω
General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
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August 2 AO348 N-Channel Enhancement Mode Field Effect Transistor General Description The AO348 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
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UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed
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July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP8818AS NCEP8818AS SOP-8 Ø330mm 12mm 2500 units
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 2NNPP06 is a complementary enhancement mode MOSFET H-BRIDGE, it uses
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Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
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WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET Http://www.sh-willsemi.com V DS (V) Typical R DS(on) (mω) -3 11@ =-1V 15 @ =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field
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Dual P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-4.9A, R DS(ON) = 53mΩ(typ.) @ V GS = -V R DS(ON) = 8mΩ(typ.) @ V GS = -4.5V S 8 Super High Density Cell Design G 7 Reliable and Rugged
More informationMDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω
MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
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TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
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PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
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General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,
More informationPNMT50V02E N-Channel MOSFET
N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 5 @V GS =V.22 D (3)
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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