Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel)
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1 Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω = V R DS(ON) = 8mΩ = 4.5V -4V/-5A, R DS(ON) = 35mΩ =-V R DS(ON) = 48mΩ =-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications () G D DD D S GS G Top View of SOP 8 (8) (7) D D (4) G (3) S Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S () N-Channel MOSFET D D (5) (6) MOSFET Ordering and Marking Information APM4568 APM4568 K : APM4568 XXXXX Assembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
2 Absolute Maximum Ratings (T A = 5 C unless otherwise noted) Symbol Parameter Rating N Channel P Channel V DSS Drain-Source Voltage 4-4 S Gate-Source Voltage ± ± I D * Continuous Drain Current =V (N) I DM * Pulsed Drain Current =-V (P) 5 - I S * Diode Continuous Forward Current A T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 P D * Power Dissipation T A =5 C T A = C.8 R θja * Thermal Resistance-Junction to Ambient 6.5 C/W Note : *Surface Mounted on in pad area, t sec. Unit V A C W Electrical Characteristics (T A = 5 C unless otherwise noted) APM4568K Symbol Parameter Test Conditions Min. Typ. Max. Static Characteristics BV DSS Drain-Source Breakdown =V, I DS =5µA N-Ch Voltage =V, I DS =-5µA P-Ch Unit V I DSS Zero Gate Voltage Drain Current (th) Gate Threshold Voltage I GSS Gate Leakage Current R DS(ON) a Drain-Source On-State Resistance V DS =3V, =V - - N-Ch T J =85 C V DS =-3V, =V P-Ch T J =85 C V DS =, I DS =5µA N-Ch.3.5 V DS =, I DS =-5µA P-Ch =±V, V DS =V N-Ch - - ± =±V, V DS =V P-Ch - - ± =V, I DS =6.5A N-Ch - 8 =-V, I DS =-5A P-Ch =4.5V, I DS =4.5A N-Ch =-4.5V, I DS =-3A P-Ch µa V na mω
3 Electrical Characteristics (Cont.) (T A = 5 C unless otherwise noted) APM4568K Symbol Parameter Test Conditions Min. Typ. Max. Diode Characteristics V SD a I SD =A, =V N-Ch -.8. Diode Forward Voltage I SD =-A, =V P-Ch Unit V Dynamic Characteristics b N-Ch - - R G Gate Resistance =V,V DS =V,F=MHz P-Ch C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel N-Ch =V, P-Ch V DS =V, Frequency=.MHz N-Ch - - P-Ch =V, V DS =-V, N-Ch Frequency=.MHz P-Ch Ω pf t d(on) T r Turn-on Delay Time Turn-on Rise Time t d(off) Turn-off Delay Time T f t rr Q rr Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge N-Channel V DD =V, R L =Ω, I DS =A, V GEN =V, R G =6Ω V DD =-V, R L =Ω, I DS =-A, V GEN =-V, R G =6Ω N-Channel I SD =6.5A, di SD /dt =A/µs N-Ch P-Ch - 3 N-Ch P-Ch - 39 N-Ch P-Ch N-Ch - 6 P-Ch - N-Ch - - P-Ch N-Ch I SD =-5A, di SD /dt =A/µs P-Ch - - ns ns nc Q g Total Gate Charge N-Channel N-Ch - 8 V DS =V, =V, I DS =6.5A Q gs Gate-Source Charge V DS =-V, =-V, Gate-Drain Charge I DS =-5A Q gd Note a : Pulse test ; pulse width 3ms, duty cycle %. Note b : Guaranteed by design, not subject to production testing. P-Ch - 8 N-Ch P-Ch N-Ch P-Ch nc 3
4 Typical Operating Characteristics N-Channel Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) T A =5 o C T A =5 o C,V G =V Safe Operation Area Thermal Transient Impedance ID - Drain Current (A). Rds(on) Limit 3us ms ms ms s DC T. A =5 O C.. Normalized Transient Thermal Resistance Single Pulse. Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E-4 E VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
5 Typical Operating Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 3 = 5, 6, 7, 8, 9, V 5 ID - Drain Current (A) V 4V 3.5V RDS(ON) - On - Resistance (mω) =4.5V =V 3V VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 5 I D =6.5A.6 I DS =5µA RDS(ON) - On - Resistance (mω) Normalized Threshold Voltage VGS - Gate - Source Voltage (V) 5
6 Typical Operating Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward.8.6 = V I DS = 6.5A 3 Normalized On Resistance IS - Source Current (A) T j =5 o C T j =5 o C.6 R j =5 o C: mω VSD - Source - Drain Voltage (V) C - Capacitance (pf) Capacitance 4 Frequency=MHz Ciss Coss Crss VDS - Drain - Source Voltage (V) VGS - Gate - source Voltage (V) V DS = V I D = 6.5A Gate Charge QG - Gate Charge (nc) 6
7 Typical Operating Characteristics (Cont.) Power Dissipation Drain Current Ptot - Power (W).5. -ID - Drain Current (A) T A =5 o C T A =5 o C,V G =-V Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A). Rds(on) Limit 3us ms ms ms s DC T. A =5 O C.. Normalized Transient Thermal Resistance Single Pulse Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E-4 E VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 7
8 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) = -5, -6, -7, -8, -9, -V -4V -3.5V -3V RDS(ON) - On - Resistance (mω) = -4.5V = -V VDS - Drain - Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mω) I D = -5A Normalized Threshold Voltage I DS = -5µA VGS - Gate - Source Voltage (V)
9 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward.8.6 = -V I DS = -5A Normalized On Resistance IS - Source Current (A) T j =5 o C T j =5 o C. R j =5 o C: 35mΩ VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) Crss Frequency=MHz Ciss Coss -VGS - Gate - source Voltage (V) V DS = -V I D = -5A VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) 9
10 Package Information SOP-8 D SEE VIEW A E E h X 45 e b c A A A VIEW A L.5 GAUGE PLANE SEATING PLANE S Y M SOP-8 B O L MIN. MAX. MIN. A.75 A..5.4 MAX..69. A.5.49 b c D E E e.7 BSC.5 BSC h L MILLIMETERS INCHES Note:. Follow JEDEC MS- AA.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side.
11 Carrier Tape & Reel Dimensions OD P P P A H A E OD B A T B W F K B A SECTION A-A SECTION B-B d T Application A H T C d D W E F MIN..5 MIN.. MIN SOP-8 P P P D D T A B K MIN (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 5
12 Taping Direction Information SOP-8 USER DIRECTION OF FEED Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin t L Ramp-down ts Preheat 5 t 5 C to Peak Time Reliability Test Program Test item Method Description SOLDERABILITY MIL-STD-883D-3 45 C, 5 sec HOLT MIL-STD-883D-5.7 Hrs C PCT JESD--B, A 68 Hrs, %RH, C TST MIL-STD-883D C~5 C, Cycles
13 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (T L to T P ) 3 C/second max. 3 C/second max. Preheat C 5 C - Temperature Min (Tsmin) - Temperature Max (Tsmax) 5 C C 6- seconds 6-8 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L ) - Time (t L ) 83 C 6-5 seconds 7 C 6-5 seconds Peak/Classification Temperature (Tp) See table See table Time within 5 C of actual Peak Temperature (tp) -3 seconds -4 seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 5 C to Peak Temperature 6 minutes max. 8 minutes max. Note: All temperatures refer to topside of the package. Measured on the body surface. Table. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 Table. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 > <.6 mm 6 + C* 6 + C* 6 + C*.6 mm.5 mm 6 + C* 5 + C* 45 + C*.5 mm 5 + C* 45 + C* 45 + C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 6 C+ C) at the rated MSL level. <35 Volume mm 3 35 <.5 mm 4 +/-5 C 5 +/-5 C.5 mm 5 +/-5 C 5 +/-5 C Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindain City, Taipei County 346, Taiwan Tel : Fax :
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N-Channel Enhancement Mode MOSFET Features Pin Description 60V/12A, R DS(ON) = 6.6mW (max.) @ V GS =V R DS(ON) = 8.0mW (max.) @ V GS =4.5V 0% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices
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N-Channel Enhancement Mode MOSFET Features 75V/7 a, R DS(ON) = 4.3mW (Max.) @ V GS =V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) Pin Description D S G Top View of TO-263-3
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Features 20V/3A, R DS(ON) =50mΩ(typ.) @ V GS =4.5V Pin Description R DS(ON) =90mΩ(typ.) @ V GS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT23-3L
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P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available
More informationHandling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationG : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T
More informationSM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More informationS1 / D2 (3)(4) (2)(5)(6)(7)
Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.
P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS
More informationHandling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
More informationV OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel
Low Dropout 6mA Linear Regulator for DC Fan Control Features Low Dropout Voltage: mv (typical) @ 6mA Low Quiescent Current: 4mA Selectable Adjustable/Full Speed Mode O/I Voltage Ratio in Adjustable Mode
More informationOUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code.
Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features Single Phase Full Wave Fan Driver Silent Driver Low Supply Current Built-in Lock Protection and Auto Restart Function (External Capacitor
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.
ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free
More informationGeneral Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8
1A Low Dropout, Fast Response Fixed Voltage Regulator Features General Description Guaranteed Output Voltage Accuracy within 2% Fast Transient Response Load Regulation : 1mV Typ. Line Regulation : 4mV
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)
SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS
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Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small
More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
More informationFeatures. General Description. Applications. 8-PIN Synchronous Buck PWM Controller
8-PIN Synchronous Buck PWM Controller Features General Description Operating with Single 5V or 1V Input Drives N-Channel MOSFETs Simple Single-Loop Control Design - Voltage-Mode PWM Control - Full 0% to
More informationGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationRU4953BH. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -3V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =7mΩ(Typ.)@V GS =-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationGeneral Description. Pin Configuration. Applications. Three-Terminal Low Current Positive Voltage Regulator
Three-Terminal Low Current Positive Voltage Regulator Features Three-Terminal Regulators Maximum Input Voltage : 30V Output Voltages of 5V, 12V Output Current Up to 100m No External Components Internal
More informationTaiwan Goodark Technology Co.,Ltd TGD0103M
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationRU20P5E. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -2V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-4.5V R DS (ON) =65mΩ(Typ.)@V GS =-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationHigh Input Voltage, Low Quiescent Current, 150mA LDO Regulator
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More informationRU20P7C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. -20V/-5A, R DS (ON) GS =-2.5V
P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationRU1HP60R. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings -100V/-60A,
P-Channel Advanced Power MOSFET Features -V/-6A, R DS (ON) =8mΩ(Typ.)@V GS =-V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating
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Single-Phase Full-Wave Motor Driver with uilt-in Hall Sensor Features On-chip Hall Sensor High Sensitivity Hall Effect Sensor IC: ±15G(Typ.) uilt-in Lock Protection and Auto Restart Function Speed Controllable
More informationKS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D
More informationRU30D20H. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. S2 Dual N-Channel MOSFET
N-Channel Advanced Power MOSFET Features 3V/2A, R DS (ON) =mω(typ.)@v GS =V R DS (ON) =2mΩ(Typ.)@V GS =4.V Fast Switching Speed Low gate Charge % avalanche tested Lead Free and Green Devices Available
More informationRU30P4B. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
RU3P4B P-Channel Advanced Power MOSFET Features -25V/-4A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =6mΩ(Typ.)@V GS =-4.5V R DS (ON) =8mΩ(Typ.)@V GS =-2.5V Low On-Resistance Super High Dense Cell Design
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationRU1HE16L. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO252. Power Management. N-Channel MOSFET
N-Channel Advanced Power MOSFET MOSFET Features 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V Pin Description Super High Dense Cell Design ESD protected Reliable and Rugged Lead
More informationTO-252 Pin Configuration
WSF46 General Description The WSF46 is the highest performance trench with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
More informationRU20P4C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings SOT23-3. Power Management Load Switch.
P-Channel Advanced Power MOSFET Features -20V/-4A, RDS (ON) =40m (Typ.) @ VGS=-4.5V RDS (ON) =55m (Typ.) @ VGS=-2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead
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DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationPJM8205DNSG Dual N Enhancement Field Effect Transistor
DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection
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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE30C uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is
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More informationRU205B. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings SOT-23. Load Switch PWM Applications.
N-Channel Advanced Power MOSFET MOSFET Features 20V/5A, RDS (ON) =30mΩ (Typ.) @ VGS=4.5V RDS (ON) =38mΩ (Typ.) @ VGS=2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged
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More informationTaiwan Goodark Technology Co.,Ltd TGD01P30
TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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RUC8H Complementary Advanced Power MOSFET Features N-Channel V/8A, R DS (ON) =mω(typ.) @ V GS =V R DS (ON) =6mΩ(Typ.) @ V GS =4.5V P-Channel -V/-7A, R DS (ON) =8mΩ (Typ.) @ V GS =-V R DS (ON) =5mΩ (Typ.)
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TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
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Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free
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TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
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More informationRU75N08S. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings TO-263. Switching Application Systems.
N-Channel Advanced Power MOSFET Features 75V/80A, RDS (ON) =8mΩ (typ.) @VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche
More informationRU75N08. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings. Switching Application Systems.
N-Channel Advanced Power MOSFET MOSFET Features 75V/80A, RDS (ON) =8mΩ VGS=10V I DS =40A Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100%
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