Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel)

Size: px
Start display at page:

Download "Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel)"

Transcription

1 Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω = V R DS(ON) = 8mΩ = 4.5V -4V/-5A, R DS(ON) = 35mΩ =-V R DS(ON) = 48mΩ =-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications () G D DD D S GS G Top View of SOP 8 (8) (7) D D (4) G (3) S Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S () N-Channel MOSFET D D (5) (6) MOSFET Ordering and Marking Information APM4568 APM4568 K : APM4568 XXXXX Assembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.

2 Absolute Maximum Ratings (T A = 5 C unless otherwise noted) Symbol Parameter Rating N Channel P Channel V DSS Drain-Source Voltage 4-4 S Gate-Source Voltage ± ± I D * Continuous Drain Current =V (N) I DM * Pulsed Drain Current =-V (P) 5 - I S * Diode Continuous Forward Current A T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 P D * Power Dissipation T A =5 C T A = C.8 R θja * Thermal Resistance-Junction to Ambient 6.5 C/W Note : *Surface Mounted on in pad area, t sec. Unit V A C W Electrical Characteristics (T A = 5 C unless otherwise noted) APM4568K Symbol Parameter Test Conditions Min. Typ. Max. Static Characteristics BV DSS Drain-Source Breakdown =V, I DS =5µA N-Ch Voltage =V, I DS =-5µA P-Ch Unit V I DSS Zero Gate Voltage Drain Current (th) Gate Threshold Voltage I GSS Gate Leakage Current R DS(ON) a Drain-Source On-State Resistance V DS =3V, =V - - N-Ch T J =85 C V DS =-3V, =V P-Ch T J =85 C V DS =, I DS =5µA N-Ch.3.5 V DS =, I DS =-5µA P-Ch =±V, V DS =V N-Ch - - ± =±V, V DS =V P-Ch - - ± =V, I DS =6.5A N-Ch - 8 =-V, I DS =-5A P-Ch =4.5V, I DS =4.5A N-Ch =-4.5V, I DS =-3A P-Ch µa V na mω

3 Electrical Characteristics (Cont.) (T A = 5 C unless otherwise noted) APM4568K Symbol Parameter Test Conditions Min. Typ. Max. Diode Characteristics V SD a I SD =A, =V N-Ch -.8. Diode Forward Voltage I SD =-A, =V P-Ch Unit V Dynamic Characteristics b N-Ch - - R G Gate Resistance =V,V DS =V,F=MHz P-Ch C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel N-Ch =V, P-Ch V DS =V, Frequency=.MHz N-Ch - - P-Ch =V, V DS =-V, N-Ch Frequency=.MHz P-Ch Ω pf t d(on) T r Turn-on Delay Time Turn-on Rise Time t d(off) Turn-off Delay Time T f t rr Q rr Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge N-Channel V DD =V, R L =Ω, I DS =A, V GEN =V, R G =6Ω V DD =-V, R L =Ω, I DS =-A, V GEN =-V, R G =6Ω N-Channel I SD =6.5A, di SD /dt =A/µs N-Ch P-Ch - 3 N-Ch P-Ch - 39 N-Ch P-Ch N-Ch - 6 P-Ch - N-Ch - - P-Ch N-Ch I SD =-5A, di SD /dt =A/µs P-Ch - - ns ns nc Q g Total Gate Charge N-Channel N-Ch - 8 V DS =V, =V, I DS =6.5A Q gs Gate-Source Charge V DS =-V, =-V, Gate-Drain Charge I DS =-5A Q gd Note a : Pulse test ; pulse width 3ms, duty cycle %. Note b : Guaranteed by design, not subject to production testing. P-Ch - 8 N-Ch P-Ch N-Ch P-Ch nc 3

4 Typical Operating Characteristics N-Channel Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) T A =5 o C T A =5 o C,V G =V Safe Operation Area Thermal Transient Impedance ID - Drain Current (A). Rds(on) Limit 3us ms ms ms s DC T. A =5 O C.. Normalized Transient Thermal Resistance Single Pulse. Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E-4 E VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4

5 Typical Operating Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 3 = 5, 6, 7, 8, 9, V 5 ID - Drain Current (A) V 4V 3.5V RDS(ON) - On - Resistance (mω) =4.5V =V 3V VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 5 I D =6.5A.6 I DS =5µA RDS(ON) - On - Resistance (mω) Normalized Threshold Voltage VGS - Gate - Source Voltage (V) 5

6 Typical Operating Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward.8.6 = V I DS = 6.5A 3 Normalized On Resistance IS - Source Current (A) T j =5 o C T j =5 o C.6 R j =5 o C: mω VSD - Source - Drain Voltage (V) C - Capacitance (pf) Capacitance 4 Frequency=MHz Ciss Coss Crss VDS - Drain - Source Voltage (V) VGS - Gate - source Voltage (V) V DS = V I D = 6.5A Gate Charge QG - Gate Charge (nc) 6

7 Typical Operating Characteristics (Cont.) Power Dissipation Drain Current Ptot - Power (W).5. -ID - Drain Current (A) T A =5 o C T A =5 o C,V G =-V Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A). Rds(on) Limit 3us ms ms ms s DC T. A =5 O C.. Normalized Transient Thermal Resistance Single Pulse Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E-4 E VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 7

8 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) = -5, -6, -7, -8, -9, -V -4V -3.5V -3V RDS(ON) - On - Resistance (mω) = -4.5V = -V VDS - Drain - Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mω) I D = -5A Normalized Threshold Voltage I DS = -5µA VGS - Gate - Source Voltage (V)

9 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward.8.6 = -V I DS = -5A Normalized On Resistance IS - Source Current (A) T j =5 o C T j =5 o C. R j =5 o C: 35mΩ VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) Crss Frequency=MHz Ciss Coss -VGS - Gate - source Voltage (V) V DS = -V I D = -5A VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) 9

10 Package Information SOP-8 D SEE VIEW A E E h X 45 e b c A A A VIEW A L.5 GAUGE PLANE SEATING PLANE S Y M SOP-8 B O L MIN. MAX. MIN. A.75 A..5.4 MAX..69. A.5.49 b c D E E e.7 BSC.5 BSC h L MILLIMETERS INCHES Note:. Follow JEDEC MS- AA.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side.

11 Carrier Tape & Reel Dimensions OD P P P A H A E OD B A T B W F K B A SECTION A-A SECTION B-B d T Application A H T C d D W E F MIN..5 MIN.. MIN SOP-8 P P P D D T A B K MIN (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 5

12 Taping Direction Information SOP-8 USER DIRECTION OF FEED Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin t L Ramp-down ts Preheat 5 t 5 C to Peak Time Reliability Test Program Test item Method Description SOLDERABILITY MIL-STD-883D-3 45 C, 5 sec HOLT MIL-STD-883D-5.7 Hrs C PCT JESD--B, A 68 Hrs, %RH, C TST MIL-STD-883D C~5 C, Cycles

13 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (T L to T P ) 3 C/second max. 3 C/second max. Preheat C 5 C - Temperature Min (Tsmin) - Temperature Max (Tsmax) 5 C C 6- seconds 6-8 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L ) - Time (t L ) 83 C 6-5 seconds 7 C 6-5 seconds Peak/Classification Temperature (Tp) See table See table Time within 5 C of actual Peak Temperature (tp) -3 seconds -4 seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 5 C to Peak Temperature 6 minutes max. 8 minutes max. Note: All temperatures refer to topside of the package. Measured on the body surface. Table. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 Table. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 > <.6 mm 6 + C* 6 + C* 6 + C*.6 mm.5 mm 6 + C* 5 + C* 45 + C*.5 mm 5 + C* 45 + C* 45 + C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 6 C+ C) at the rated MSL level. <35 Volume mm 3 35 <.5 mm 4 +/-5 C 5 +/-5 C.5 mm 5 +/-5 C 5 +/-5 C Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindain City, Taipei County 346, Taiwan Tel : Fax :

Pin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON)

Pin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON) Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense

More information

Assembly Material. Handling Code Temperature Range Package Code

Assembly Material. Handling Code Temperature Range Package Code Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R

More information

APM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.

APM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4. Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available

More information

Features. N-Channel Enhancement Mode MOSFET

Features. N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free

More information

Features. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V

Features. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and

More information

Temperature Range Package Code

Temperature Range Package Code N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green

More information

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead

More information

Features. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V

Features. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green

More information

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices

More information

Features. P-Channel Enhancement Mode MOSFET

Features. P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell

More information

APM9948K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 60V/4A, R DS(ON) = 10V

APM9948K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 60V/4A, R DS(ON) = 10V ual N-Channel Enhancement Mode MOSFET Features 60V/4, R S(ON) = 60mΩ(typ.) @ V GS = 0V R S(ON) = 72mΩ(typ.) @ V GS = 4.5V Super High ense Cell esign Reliable and Rugged Lead Free and Green evices vailable

More information

Package Code S : SOP-8. Date Code YYXXX WW

Package Code S : SOP-8. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D

More information

Features. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V

Features. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View

More information

Package Code. Handling Code. Assembly Material

Package Code. Handling Code. Assembly Material P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices

More information

APM4953. Features. Pin Description. Applications. Ordering and Marking Information. Absolute Maximum Ratings (T A

APM4953. Features. Pin Description. Applications. Ordering and Marking Information. Absolute Maximum Ratings (T A Dual P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-4.9A, R DS(ON) = 53mΩ(typ.) @ V GS = -V R DS(ON) = 8mΩ(typ.) @ V GS = -4.5V S 8 Super High Density Cell Design G 7 Reliable and Rugged

More information

advise customers to obtain the latest version of relevant information to verify before placing orders.

advise customers to obtain the latest version of relevant information to verify before placing orders. N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOFET Features Pin Description 3V/7, R D(ON) =4.5mΩ (typ.) @ V G = V R D(ON) =6mΩ (typ.) @ V G = 4.5V uper High Dense Cell Design valanche Rated Reliable and Rugged Lead Free

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON)

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON) N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, R DS(ON) =25mΩ(max.) @ V GS =10V R DS(ON) =35mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

More information

Package Code. Handling Code. Assembly Material

Package Code. Handling Code. Assembly Material P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free

More information

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON) Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable

More information

G D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW

G D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G

More information

P HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)

P HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON) N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max. SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and

More information

P HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application

P HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G

More information

Package Code. Date Code YYXXX WW

Package Code. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max. P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable

More information

Date Code Assembly Material

Date Code Assembly Material N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max. N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)

More information

Date Code Assembly Material

Date Code Assembly Material N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max. P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS

More information

Package Code P : TO-220FB-3L. Date Code YYXXX WW

Package Code P : TO-220FB-3L. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS

More information

SM2607CSC. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/5A, R DS(ON)

SM2607CSC. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/5A, R DS(ON) Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =38mW(max.) @ =4.5V R DS(ON) =54mW(max.) @ =2.5V R DS(ON) =85mW(max.) @ =.8V P-Channel -2V/-3.3A, R DS(ON)

More information

Handling Code Temperature Range

Handling Code Temperature Range N-Channel Enhancement Mode MOSFET Features Pin Description 60V/12A, R DS(ON) = 6.6mW (max.) @ V GS =V R DS(ON) = 8.0mW (max.) @ V GS =4.5V 0% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices

More information

SM4337NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/55A, R DS(ON) =7.1mW V GS

SM4337NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/55A, R DS(ON) =7.1mW V GS N-Channel Enhancement Mode MOSFET Features Pin Description 3V/55, R DS(ON) =7.1mW (max.) @ V GS =V R DS(ON) =mw (max.) @ V GS =4.5V % E S (UIS) test ESD Protection D D D D S S S G DFN5x6-8 Pin 1 Lead Free

More information

SM2001CS K : Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/9.

SM2001CS K : Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/9. Dual Enhancement Mode MOSFET (N- and P-Channel) Features N-Channel V/9.5A, P-Channel R DS(ON) =4mW(max.) @ = 4.5V R DS(ON) =8mW(max.) @ =.5V -V/-6A, R DS(ON) =45mW(max.) @ =-4.5V R DS(ON) =65mW(max.) @

More information

SM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max.

SM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max. Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 3V/64A, R DS(ON) = 5.2mΩ (max.) @ = V R DS(ON) = 7.5mΩ (max.) @ = 4.5V Channel 2 3V/85A, G2 S2S2S2 D G DD S/D2 (Pin 9) DFN5x6D-8_EP2

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/15A, R DS(ON) = 10V. = V GS = 4.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/15A, R DS(ON) = 10V. = V GS = 4. N-Channel Enhancement Mode MOSFET Features 100V/15A, R DS(ON) = 100mW(max.) @ V GS = 10V R DS(ON) = 110mW(max.) @ V GS = 4.5V 100% UIS + R g Tested ESD Protection Reliable and Rugged Lead Free and Green

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 40V/66A, R DS(ON) =3.2mW V GS. =10V =4mW (Max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 40V/66A, R DS(ON) =3.2mW V GS. =10V =4mW (Max. N-Channel Enhancement Mode MOSFET Features Pin Description 4V/66A, R DS(ON) =3.2mW (Max.) @ V GS =V R DS(ON) =4mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices

More information

Handling Code Temperature Range Package Code. Assembly Material

Handling Code Temperature Range Package Code. Assembly Material N-Channel Enhancement Mode MOSFET Features 75V/7 a, R DS(ON) = 4.3mW (Max.) @ V GS =V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) Pin Description D S G Top View of TO-263-3

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/85A, R DS(ON) =10V = 4.6mW V GS. = 3mW (Max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/85A, R DS(ON) =10V = 4.6mW V GS. = 3mW (Max. N-Channel Enhancement Mode MOSFET Features Pin Description 3V/85, R DS(ON) = 3mW (Max.) @ V GS =V R DS(ON) = 4.6mW (Max.) @ V GS =4.5V Reliable and Rugged D G S Lead Free and Green Devices vailable (RoHS

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/35A, R DS(ON) = 10V 100% UIS + R g. = 38mW(max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/35A, R DS(ON) = 10V 100% UIS + R g. = 38mW(max. N-Channel Enhancement Mode MOSFET Features Pin Description 15V/35A, R DS(ON) = 38mW(max.) @ V GS = V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G DS Top

More information

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features 20V/3A, R DS(ON) =50mΩ(typ.) @ V GS =4.5V Pin Description R DS(ON) =90mΩ(typ.) @ V GS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT23-3L

More information

SM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V

SM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available

More information

Handling Code Temperature Range Package Code

Handling Code Temperature Range Package Code N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max. N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices

More information

G : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX

G : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested

More information

Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS

Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T

More information

SM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET

SM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS

More information

S1 / D2 (3)(4) (2)(5)(6)(7)

S1 / D2 (3)(4) (2)(5)(6)(7) Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V

More information

SM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.

SM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max. N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max. P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS

More information

Handling Code Temperature Range. TU : Tube. Assembly Material

Handling Code Temperature Range. TU : Tube. Assembly Material N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available

More information

V OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel

V OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel Low Dropout 6mA Linear Regulator for DC Fan Control Features Low Dropout Voltage: mv (typical) @ 6mA Low Quiescent Current: 4mA Selectable Adjustable/Full Speed Mode O/I Voltage Ratio in Adjustable Mode

More information

OUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code.

OUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code. Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features Single Phase Full Wave Fan Driver Silent Driver Low Supply Current Built-in Lock Protection and Auto Restart Function (External Capacitor

More information

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3. ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free

More information

General Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8

General Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8 1A Low Dropout, Fast Response Fixed Voltage Regulator Features General Description Guaranteed Output Voltage Accuracy within 2% Fast Transient Response Load Regulation : 1mV Typ. Line Regulation : 4mV

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON) SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS

More information

Features. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC

Features. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of

More information

Features. General Description. Applications. 8-PIN Synchronous Buck PWM Controller

Features. General Description. Applications. 8-PIN Synchronous Buck PWM Controller 8-PIN Synchronous Buck PWM Controller Features General Description Operating with Single 5V or 1V Input Drives N-Channel MOSFETs Simple Single-Loop Control Design - Voltage-Mode PWM Control - Full 0% to

More information

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2 N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

RU4953BH. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings

RU4953BH. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings P-Channel Advanced Power MOSFET Features -3V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =7mΩ(Typ.)@V GS =-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices

More information

General Description. Pin Configuration. Applications. Three-Terminal Low Current Positive Voltage Regulator

General Description. Pin Configuration. Applications. Three-Terminal Low Current Positive Voltage Regulator Three-Terminal Low Current Positive Voltage Regulator Features Three-Terminal Regulators Maximum Input Voltage : 30V Output Voltages of 5V, 12V Output Current Up to 100m No External Components Internal

More information

Taiwan Goodark Technology Co.,Ltd TGD0103M

Taiwan Goodark Technology Co.,Ltd TGD0103M TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

RU20P5E. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings

RU20P5E. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings P-Channel Advanced Power MOSFET Features -2V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-4.5V R DS (ON) =65mΩ(Typ.)@V GS =-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green

More information

High Input Voltage, Low Quiescent Current, 150mA LDO Regulator

High Input Voltage, Low Quiescent Current, 150mA LDO Regulator High Input Voltage, Low Quiescent Current, 150mA LDO Regulator Features Wide Input Voltage Range: 5.4V to 25V Ultra Low Ground Current: 10mA High Output Accuracy: ±2.5% Excellent Load/Line Transient Low

More information

RU20P7C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. -20V/-5A, R DS (ON) GS =-2.5V

RU20P7C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. -20V/-5A, R DS (ON) GS =-2.5V P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

RU1HP60R. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings -100V/-60A,

RU1HP60R. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings -100V/-60A, P-Channel Advanced Power MOSFET Features -V/-6A, R DS (ON) =8mΩ(Typ.)@V GS =-V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating

More information

Single-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description

Single-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description Single-Phase Full-Wave Motor Driver with uilt-in Hall Sensor Features On-chip Hall Sensor High Sensitivity Hall Effect Sensor IC: ±15G(Typ.) uilt-in Lock Protection and Auto Restart Function Speed Controllable

More information

KS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings

KS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D

More information

RU30D20H. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. S2 Dual N-Channel MOSFET

RU30D20H. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. S2 Dual N-Channel MOSFET N-Channel Advanced Power MOSFET Features 3V/2A, R DS (ON) =mω(typ.)@v GS =V R DS (ON) =2mΩ(Typ.)@V GS =4.V Fast Switching Speed Low gate Charge % avalanche tested Lead Free and Green Devices Available

More information

RU30P4B. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings

RU30P4B. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings RU3P4B P-Channel Advanced Power MOSFET Features -25V/-4A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =6mΩ(Typ.)@V GS =-4.5V R DS (ON) =8mΩ(Typ.)@V GS =-2.5V Low On-Resistance Super High Dense Cell Design

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

RU1HE16L. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO252. Power Management. N-Channel MOSFET

RU1HE16L. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO252. Power Management. N-Channel MOSFET N-Channel Advanced Power MOSFET MOSFET Features 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V Pin Description Super High Dense Cell Design ESD protected Reliable and Rugged Lead

More information

TO-252 Pin Configuration

TO-252 Pin Configuration WSF46 General Description The WSF46 is the highest performance trench with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

More information

RU20P4C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings SOT23-3. Power Management Load Switch.

RU20P4C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings SOT23-3. Power Management Load Switch. P-Channel Advanced Power MOSFET Features -20V/-4A, RDS (ON) =40m (Typ.) @ VGS=-4.5V RDS (ON) =55m (Typ.) @ VGS=-2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead

More information

P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM

More information

PJM8205DNSG Dual N Enhancement Field Effect Transistor

PJM8205DNSG Dual N Enhancement Field Effect Transistor DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection

More information

PE2302C. N-Channel Enhancement Mode Power MOSFET 2302C DESCRIPTION GENERAL FEATURES. Application. Page 1

PE2302C. N-Channel Enhancement Mode Power MOSFET 2302C DESCRIPTION GENERAL FEATURES. Application. Page 1 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE30C uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is

More information

RU205B. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings SOT-23. Load Switch PWM Applications.

RU205B. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings SOT-23. Load Switch PWM Applications. N-Channel Advanced Power MOSFET MOSFET Features 20V/5A, RDS (ON) =30mΩ (Typ.) @ VGS=4.5V RDS (ON) =38mΩ (Typ.) @ VGS=2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged

More information

N & P-Channel 100-V (D-S) MOSFET

N & P-Channel 100-V (D-S) MOSFET N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives

More information

N-Channel Power MOSFET 30V, 185A, 1.8mΩ

N-Channel Power MOSFET 30V, 185A, 1.8mΩ TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in

More information

Taiwan Goodark Technology Co.,Ltd TGD01P30

Taiwan Goodark Technology Co.,Ltd TGD01P30 TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

RU30C8H. Complementary Advanced Power MOSFET. Applications. Absolute Maximum Ratings. N-Channel 30V/8A, P-Channel -30V/-7A,

RU30C8H. Complementary Advanced Power MOSFET. Applications. Absolute Maximum Ratings. N-Channel 30V/8A, P-Channel -30V/-7A, RUC8H Complementary Advanced Power MOSFET Features N-Channel V/8A, R DS (ON) =mω(typ.) @ V GS =V R DS (ON) =6mΩ(Typ.) @ V GS =4.5V P-Channel -V/-7A, R DS (ON) =8mΩ (Typ.) @ V GS =-V R DS (ON) =5mΩ (Typ.)

More information

Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator V IN. Enable VIN 1 GND 2 SHDN 3

Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator V IN. Enable VIN 1 GND 2 SHDN 3 Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator Features General Description Wide Operating Voltage: 2.5~6V Low Dropout Voltage: 290mV@3V/300mA Fixed Output Voltages: 1.2~3.6V with Step

More information

N- and P-Channel 60V (D-S) Power MOSFET

N- and P-Channel 60V (D-S) Power MOSFET TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC

Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free

More information

N-Channel Power MOSFET 100V, 46A, 16mΩ

N-Channel Power MOSFET 100V, 46A, 16mΩ TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU

More information

NCE40P06J. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE40P06J. NCE P-Channel Enhancement Mode Power MOSFET.  Description. General Features. Application Pb Free Product http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4822 can provide excellent R DS(ON) and low gate charge by using advanced trench technology. The UT4822 is suitable for

More information

RU75N08S. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings TO-263. Switching Application Systems.

RU75N08S. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings TO-263. Switching Application Systems. N-Channel Advanced Power MOSFET Features 75V/80A, RDS (ON) =8mΩ (typ.) @VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche

More information

RU75N08. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings. Switching Application Systems.

RU75N08. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings. Switching Application Systems. N-Channel Advanced Power MOSFET MOSFET Features 75V/80A, RDS (ON) =8mΩ VGS=10V I DS =40A Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100%

More information