NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
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1 April 996 NP6060L / NB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, C/C converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 48A, 60V. R S(ON) = V GS = 5V. Low drive requirements allowing operation directly from logic drivers. V GS(TH) < 2.0V. Critical C electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 75 C maximum junction temperature rating. High density cell design for extremely low R S(ON). TO-220 and TO-263 ( 2 PAK) package for both through hole and surface mount applications. G S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter NP6060L NB6060L Units V SS rain-source Voltage 60 V V GR rain-gate Voltage (R GS < MΩ) 60 V V GSS Gate-Source Voltage - Continuous ± 6 V - Nonrepetitive (t P < 50 µs) ± 25 I rain Current - Continuous 48 A - Pulsed 44 P Total Power T C = 25 C 00 W erate above 25 C 0.67 W/ C T J,T STG Operating and Storage Temperature -65 to 75 C T L Maximum lead temperature for soldering purposes, /8" from case for 5 seconds 275 C 997 Fairchild Semiconductor Corporation NP6060L Rev. / NB6060L Rev. E
2 Electrical Characteristics (T C = 25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units RAIN-SOURCE AVALANCHE RATINGS (Note ) W SS Single Pulse rain-source Avalanche Energy V = 25 V, I = 48 A 200 mj I AR Maximum rain-source Avalanche Current 48 A OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = 0 V, I = 250 µa 60 V I SS Zero Gate Voltage rain Current V S = 60 V, V GS = 0 V 250 µa T J = 25 C ma I GSSF Gate - Body Leakage, Forward V GS = 6 V, V S = 0 V 00 na I GSSR Gate - Body Leakage, Reverse V GS = -6 V, V S = 0 V -00 na ON CHARACTERISTICS (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = 250 µa 2 V T J = 25 C R S(ON) Static rain-source On-Resistance V GS = 5 V, I = 24 A Ω T J = 25 C 0.04 V GS = 0 V, I = 24 A 0.02 I (on) On-State rain Current V GS = 5 V, V S = 0 V 48 A g FS Forward Transconductance V S = 0 V, I = 24 A 0 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = 25 V, V GS = 0 V, pf C oss Output Capacitance f =.0 MHz pf C rss Reverse Transfer Capacitance pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time V = 30 V, I = 48 A, 5 30 ns t r Turn - On Rise Time V GS = 5 V, R GEN = 5 Ω, R GS = 5 Ω ns t (off) Turn - Off elay Time ns t f Turn - Off Fall Time ns Q g Total Gate Charge V S = 48 V, nc Q gs Gate-Source Charge I = 48 A, V GS = 5 V 8.2 nc Q gd Gate-rain Charge 2 nc NP6060L Rev. / NB6060L Rev. E
3 Electrical Characteristics (T C = 25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units RAIN-SOURCE IOE CHARACTERISTICS I S Maximum Continuos rain-source iode Forward Current 48 A I SM Maximum Pulsed rain-source iode Forward Current 44 A V S rain-source iode Forward Voltage V GS = 0 V, I S = 24 A (Note ).3 V T J = 25 C.2 t Reverse Recovery Time V rr GS = 0 V, I F = 48 A, ns di F /dt = 00 A/µs I Reverse Recovery Current A rr THERMAL CHARACTERISTICS R θjc Thermal Resistance, Junction-to-Case.5 C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 C/W Note:. Pulse Test: Pulse Width < 300 µs, uty Cycle < 2.0%. NP6060L Rev. / NB6060L Rev. E
4 Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) V GS = 0V V, RAIN-SOURCE VOLTAGE (V) S Figure. On-Region Characteristics R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE 2.5 V = 3.0V GS I, RAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and rain Current. 0 R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = 24A V GS = 5V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = 5.0V GS T = 25 C J 25 C -55 C T, JUNCTION TEMPERATURE ( C) J Figure 3. On-Resistance Variation with Temperature I, RAIN CURRENT (A) Figure 4. On-Resistance Variation with rain Current and Temperature. I, RAIN CURRENT (A) V S = 0V T = -55 C J V, GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. 25 C 25 C V GS(th), NORMALIZE GATE-SOURCE THRESHOL VOLTAGE V S = V GS I = 250µA T, JUNCTION TEMPERATURE ( C) J Figure 6. Gate Threshold Variation with Temperature. NP6060L Rev. / NB6060L Rev. E
5 S SS Typical Electrical Characteristics (continued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = 250µA T J, JUNCTION TEMPERATURE ( C) Figure 7. Breakdown Voltage Variation with Temperature. I, REVERSE RAIN CURRENT (A) T = 25 C J 25 C -55 C V = 0V GS V S, BOY IOE FORWAR VOLTAGE (V) Figure 8. Body iode Forward Voltage Variation with Current and Temperature. CAPACITANCE (pf) f = MHz V = 0V GS C iss C oss C rss V, GATE-SOURCE VOLTAGE (V) GS I = 48A V S= 2V 48V 24V V, RAIN TO SOURCE VOLTAGE (V) S Q, GATE CHARGE (nc) g Figure 9. Capacitance Characteristics. Figure 0. Gate Charge Characteristics. V t d(on) t on t r t d(off) t off t f V IN R L 90% 90% V OUT V GEN R GEN G UT V OUT 0% 90% 0% INVERTE R GS S V IN 0% 50% 50% PULSE WITH Figure. Switching Test Circuit. Figure 2. Switching Waveforms. NP6060L Rev. / NB6060L Rev. E
6 Typical Electrical Characteristics (continued) g, TRANSCONUCTANCE (SIEMENS) FS T = -55 C J 25 C 25 C V =0V S I, RAIN CURRENT (A) I, RAIN CURRENT (A) RS(ON) Limit V GS = 5V SINGLE PULSE o R =.5 C/W θjc T C = 25 C 00ms C 0ms ms V S, RAIN-SOURCE VOLTAGE (V) 00µs 0µs Figure 3. Transconductance Variation with rain Current. and Temperature Figure 4. Maximum Safe Operating. Area r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = 0.5 Single Pulse P(pk) R θjc (t) = r(t) * R θjc R =.5 C/W θjc t t 2 T J - T C = P * R (t) θjc uty Cycle, = t /t t,time (ms) Figure 5. Transient Thermal Response Curve. NP6060L Rev. / NB6060L Rev. E
7 TO-220 Tape and Reel ata and Package imensions TO-220 Tube Packing Configuration: Figur e.0 45 units per Tube 2 Tubes per Bag Packaging escription: TO-220 parts are shipped normally in tube. The tube is made of PVC plastic treated with anti-static agent.these tubes in standard option are placed inside a dissipative plastic bag, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box contains two bags maximum (see fig..0). And one or several of these boxes are placed inside a labeled shipping box which comes in different sizes dependi ng on the number of parts shipped. The other option comes in bulk as described in the Packaging Information table. The units in this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually labeled and placed ins ide a larger box (see fig. 3.0). These larger or intermediate boxes then will be placed finally inside a labeled shipping box which still comes in different sizes depending on the number of units shipped. 530mm x 30mm x 83mm Intermediate box 2 bags per Box Conduct ive Plastic Bag TO-220 Packaging Information: Figure 2.0 Packaging Option Packaging type TO-220 Packaging Information Note/Comments Standard (no flow code ) Rail/Tube Qty per Tube/Box 45 Box imension (mm) 530x30x83 Max qty per Box,080 Weight per unit (gm).4378 S62Z BULK 300 4x02x5, FSCINT Label 080 uni ts maximum quantity per box FSCINT Label sample FAIRCHIL SEMICONUCTOR CORPORATION HTB:B LOT: CBVK74B09 QTY: 080 NSI: FP7060 SPEC: /C: 9842 SPEC REV: B2 QA REV: (FSCINT) TO-220 bulk Packing Configuration: Figure 3.0 FSCINT Label An ti-static Bubbl e Sheets 530mm x 30mm x 83mm Intermediate box 300 units per EO70 box 5 EO70 boxe s per per Intermediate Box 500 uni ts maximum quantity per intermediate box 4mm x 02mm x 5mm EO70 Immediate Box FSCINT Label TO-220 Tube Configuration: Figure 4.0 Note: All dim ensions are in inches ± ± ± August 999, Rev. B
8 TO-220 Tape and Reel ata and Package imensions, continued TO-220 (FS PKG Code 37) : Scale : on letter size paper imensions shown below are in: inches [millimeters] Part Weight per unit (gram):.4378 September 998, Rev. A
9 ELECTRO MAGN ETI C, MAG NETIC O R R AIO ACTIVE FI EL S TNR ATE PT NUMBER PEEL STRENGTH MIN gms MAX gms TO-263AB/ 2 PAK Tape and Reel ata and Package imensions TO-263AB/ 2 PAK Packaging Configuration: Figure.0 ELECTROSTATIC SENSITIVE EVICES O NO T SHI P OR STO RE N EAR STRO NG ELECTROSTATIC ES Label CAUTION Antistatic Cover Tape Packaging escription: TO-263/ 2 PAK parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 800 units per 3" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled, dry packed, and placed inside a standard intermediate box (illustrated in figure.0) made of recyclable corrugated brown paper. One box contains one reel maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static issipative Embossed Carrier Tape Moisture Sensitive Label F63TNR Label Customized Label FB603AL F9835 FB603AL F9835 FB603AL F9835 FB603AL F9835 TO-263AB/ 2 PAK Packaging Information Packaging Option Standard (no flow code) L86Z Packaging type TNR Rail/Tube Qty per Reel/Tube/Bag Reel Size 3" ia - Box imension (mm) 359x359x57 530x30x83 Max qty per Box 800,080 Weight per unit (gm) Weight per Reel Note/Comments TO-263AB/ 2 PAK Unit Orientation 359mm x 359mm x 57mm Standard Intermediate box ES Label Moisture Sensitive Label F63TNR Label sample LOT: CBVK74B09 QTY: 800 F63TNR Label FSI: FB6320L SPEC: /C: 9842 QTY: SPEC REV: /C2: QTY2: CPN: N/F: F (F63TNR)3 RYPACK Bag TO-263AB/ 2 PAK Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Trailer Tape 400mm minimum or 25 empty pockets Components Leader Tape 520mm minimum or 95 empty pockets September 999, Rev. B
10 TO-263AB/ 2 PAK Tape and Reel ata and Package imensions, continued TO-263AB/ 2 PAK Embossed Carrier Tape Configuration: Figure 3.0 T P0 0 E F K0 Wc B0 E2 W Tc A0 P User irection of Feed imensions are in millimeter Pkg type A0 B0 W 0 E E2 F P P0 K0 T Wc Tc TO263AB/ 2 PAK (24mm) / / / / / / min.50 +/ / / / / / /-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-48 rotational and lateral movement requirements (see sketches A, B, and C). 0 deg maximum 0.9mm maximum B0 Typical component cavity center line 0.9mm maximum 0 deg maximum component rotation Sketch A (Side or Front Sectional View) Component Rotation TO-263AB/ 2 PAK Reel Configuration: Figure 4.0 A0 Sketch B (Top View) Component Rotation W Measured at Hub Typical component center line Sketch C (Top View) Component lateral movement im A Max B Min im C im A max im N im min ETAIL AA See detail AA W3 3" iameter Option W2 max Measured at Hub Tape Size Reel Option imensions are in inches and millimeters im A im B im C im im N im W im W2 im W3 (LSL-USL) 24mm 3" ia / / / / August 999, Rev. B
11 TO-263AB/ 2 PAK Tape and Reel ata and Package imensions, continued TO-263AB/ 2 PAK (FS PKG Code 45) : Scale : on letter size paper imensions shown below are in: inches [millimeters] Part Weight per unit (gram):.4378 August 998, Rev. A
12 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISCLAIMER ACEx CoolFET CROSSVOLT E 2 CMOS TM FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev.
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FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability
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500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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P-Channel.5V PowerTrench Specified MOSFET January General Description This P-Channel.5V specified MOSFET uses a rugged gate version of Fairchild s advanced PowerTrench process. It has been optimized for
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200V Logic N-Channel MOSFET QFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
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G S D J309 J310 TO-92 N-Channel RF Amplifier MMBFJ309 MMBFJ310 G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable J309 / J310 / MMBFJ309 / MMBFJ310 This device is designed for VHF/UHF
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200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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V N-Channel PowerTrench MOSFET October General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
More informationDescription. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA70N20 200V N-Channel MOSFET Features 70A, 200V, R DS(on) = 0.035Ω @ = 10 V Low gate charge ( typical 66 nc) Low C rss ( typical 89 pf) Fast switching 100% avalanche tested Improved dv/dt capability
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900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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FDD73BL/FDU73BL 3V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationIRFS650B IRFS650B. 200V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics. November 2001.
200V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced
More informationFeatures. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7
April V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage
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September BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,
More informationFeatures. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted
FDB62P 2V P-Channel.8V Specified PowerTrench MOSFET January 24 FDB62P General Description This P-Channel power MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for power management
More informationCharacteristic Value Units Drain-to-Source Voltage. 28 Continuous Drain Current (T C =100 C)
$GYDQFHG 3RZHU 026)(7 IRL540A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10µA (Max.)
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C B E MPSA28 TO-92 MMBTA28 C SuperSOT-3 Mark: 3SS B E PZTA28 C C B SOT-223 E MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor This device is designed for applications requiring extremely high current
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3V P-Channel PowerTrench MOSFET October 2 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management
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100V P-Channel MOSFET QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
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FDAF69N25 250V N-Channel MOSFET Features 34A, 250V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 77 nc) Low Crss ( typical 84 pf) Fast switching Improved dv/dt capability Description September
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900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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Dual N & P-Channel PowerTrench MOSFET October 4 General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench
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