MMBT2222A. SOT-23 Mark: 1P. = 25 C unless otherwise noted T A. Symbol Parameter Value Units
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1 B E PN2222A TO-92 MMBT2222A This device is fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Surced frm Prcess 9. SOT-23 Mark: P B E PZT2222A E B SOT-223 Abslute Maximum Ratings* T A = 25 unless therwise nted Symbl Parameter alue Units EO llectr-emitter ltage 4 BO llectr-base ltage 75 EBO Emitter-Base ltage 6. I llectr urrent - ntinuus. A T J, T stg Operating and Strage Junctin Temperature Range -55 t +5 *These ratings are limiting values abve which the serviceability f any semicnductr device may be impaired. NOTES: ) These ratings are based n a maximum junctin temperature f 5 degrees. 2) These are steady state limits. The factry shuld be cnsulted n applicatins invlving pulsed r lw duty cycle peratins. Thermal haracteristics T A = 25 unless therwise nted Symbl haracteristic Max Units PN2222A *MMBT2222A **PZT2222A P D Ttal Device Dissipatin Derate abve , 8. mw mw/ R θj Thermal Resistance, Junctin t ase 83.3 /W R θja Thermal Resistance, Junctin t Ambient /W *Device munted n FR-4 PB.6" X.6" X.6." **Device munted n FR-4 PB 36 mm X 8 mm X.5 mm; munting pad fr the cllectr lead min. 6 cm Fairchild Semicnductr rpratin
2 Electrical haracteristics T A = 25 unless therwise nted Symbl Parameter Test nditins Min Max Units OFF HARATERISTIS (BR)EO llectr-emitter Breakdwn ltage* I = ma, I B = 4 (BR)BO llectr-base Breakdwn ltage I = µa, I E = 75 (BR)EBO Emitter-Base Breakdwn ltage I E = µa, I = 6. I EX llectr utff urrent E = 6, EB(OFF) = 3. na I BO llectr utff urrent B = 6, I E = B = 6, I E =, T A = 5. µa µa I EBO Emitter utff urrent EB = 3., I = na I BL Base utff urrent E = 6, EB(OFF) = 3. 2 na ON HARATERISTIS h FE D urrent Gain I =. ma, E = I =. ma, E = I = ma, E = I = ma, E =, T A = -55 I = 5 ma, E = * I = 5 ma, E =. * I = 5 ma, E = * E(sat) llectr-emitter Saturatin I = 5 ma, I B = 5 ma ltage* I = 5 ma, I B = 5 ma BE(sat) Base-Emitter Saturatin ltage* I = 5 ma, I B = 5 ma I = 5 ma, I B = 5 ma SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Prduct I = 2 ma, E= 2, f= MHz 3 MHz b Output apacitance B =, I E =, f = khz 8. pf ib Input apacitance EB =.5, I =, f = khz 25 pf rb llectr Base Time nstant I = 2 ma, B= 2, f= 3.8 MHz 5 ps NF Nise Figure I = µa, E =, R S =. kω, f =. khz Re(h ie) Real Part f mmn-emitter I = 2 ma, E = 2, High Frequency Input Impedance f = 3 MHz 4. db 6 Ω SWITHING HARATERISTIS t d Delay Time = 3, BE(OFF) =.5, ns t r Rise Time I = 5 ma, I B = 5 ma 25 ns t s Strage Time = 3, I = 5 ma, 225 ns t f Fall Time I B = I B2 = 5 ma 6 ns *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% Spice Mdel NPN (Is=4.34f Xti=3 Eg=. af=74.3 Bf=255.9 Ne=.37 Ise=4.34f Ikf=.2847 Xtb=.5 Br=6.92 Nc=2 Isc= Ikr= Rc= jc=7.36p Mjc=.346 jc=.75 Fc=.5 je=22.p Mje=.377 je=.75 Tr=46.9n Tf=4.p Itf=.6 tf=.7 Xtf=3 Rb=)
3 Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE Typical Pulsed urrent Gain vs llectr urrent I - OLLETOR URRENT (ma) = 5 E - OLLETOR-EMITTER OLTAGE () ESAT llectr-emitter Saturatin ltage vs llectr urrent β = 25 5 I - OLLETOR URRENT (ma) BASE-EMITTER OLTAGE () BESAT Base-Emitter Saturatin ltage vs llectr urrent β = I - OLLETOR URRENT (ma) BASE-EMITTER ON OLTAGE () BE (ON) Base-Emitter ON ltage vs llectr urrent E = I - OLLETOR URRENT (ma) I - OLLETOR URRENT (na) BO 5. llectr-utff urrent vs Ambient Temperature = 4 B T - AMBIENT TEMPERATURE ( ) A APAITANE (pf) Emitter Transitin and Output apacitance vs Reverse Bias ltage b te f = MHz. REERSE BIAS OLTAGE ()
4 Typical haracteristics TIME (ns) Turn On and Turn Off Times vs llectr urrent I c I B= I B2= cc = 25 t n t ff I - OLLETOR URRENT (ma) TIME (ns) Switching Times vs llectr urrent I c I B= I B2= cc = 25 6 t s t r 8 t f t d I - OLLETOR URRENT (ma) Pwer Dissipatin vs Ambient Temperature P - POWER DISSIPATION (W) D TO-92 SOT-23 SOT TEMPERATURE ( )
5 Typical mmn Emitter haracteristics (f =.khz) HAR. RELATIE TO ALUES AT I = ma mmn Emitter haracteristics 8 E = T A = 25 h ie I - OLLETOR URRENT (ma) h e h re h fe HAR. RELATIE TO ALUES AT T = 25 A mmn Emitter haracteristics E = I = ma T - AMBIENT TEMPERATURE ( ) A h re h ie hfe h e HAR. RELATIE TO ALUES AT = E mmn Emitter haracteristics OLLETOR OLTAGE () E I = ma T A = 25 h fe h ie h re h e
6 Test ircuits 2ns 6 5 Ω. KΩ 3 2 Ω FIGURE : Saturated Turn-On Switching Time NOTE: B EBO = 5. k 37 Ω 3. KΩ 2ns 5 Ω FIGURE 2: Saturated Turn-Off Switching Time
7 TRADEMARKS The fllwing are registered and unregistered trademarks Fairchild Semicnductr wns r is authrized t use and is nt intended t be an exhaustive list f all such trademarks. AEx Bttmless lfet ROSSOLT DOME E 2 MOS TM EnSigna TM FAT FAT Quiet Series FAST DISLAIMER LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life supprt devices r systems are devices r systems which, (a) are intended fr surgical implant int the bdy, r (b) supprt r sustain life, r (c) whse failure t perfrm when prperly used in accrdance with instructins fr use prvided in the labeling, can be reasnably expected t result in significant injury t the user. PRODUT STATUS DEFINITIONS Definitin f Terms FASTr GlbalOptislatr GTO HiSe ISOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PwerTrench QFET QS QT Optelectrnics Quiet Series SILENT SWITHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLgic UH X FAIRHILD SEMIONDUTOR RESERES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical cmpnent is any cmpnent f a life supprt device r system whse failure t perfrm can be reasnably expected t cause the failure f the life supprt device r system, r t affect its safety r effectiveness. Datasheet Identificatin Prduct Status Definitin Advance Infrmatin Preliminary N Identificatin Needed Frmative r In Design First Prductin Full Prductin This datasheet cntains the design specificatins fr prduct develpment. Specificatins may change in any manner withut ntice. This datasheet cntains preliminary data, and supplementary data will be published at a later date. Fairchild Semicnductr reserves the right t make changes at any time withut ntice in rder t imprve design. This datasheet cntains final specificatins. Fairchild Semicnductr reserves the right t make changes at any time withut ntice in rder t imprve design. Obslete Nt In Prductin This datasheet cntains specificatins n a prduct that has been discntinued by Fairchild semicnductr. The datasheet is printed fr reference infrmatin nly. Rev. G
参考資料 E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
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