FMB3904. pin #1. SuperSOT -6. Mark:.1A. Dot denotes pin #1. = 25 C unless otherwise noted T A. Symbol Parameter Value Units

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FFB39 7-6 Mark:.A B E pin # B E NOTE: The pinuts are symmetrical; pin and pin are interchangeable. Units inside the carrier can be f either rientatin and will nt affect the functinality f the device.

A Dt dentes pin # E B MMPQ39 E B B3 E3 B E B E OI-6 Mark: MMPQ39 pin # 33 FFB39 / FMB39 / MMPQ39 NPN Multi-hip General Purpse Amplifier This device is designed as a general purpse amplifier and

1 FFB Mark:.A B E pin # B E NOTE: The pinuts are symmetrical; pin and pin are interchangeable. Units inside the carrier can be f either rientatin and will nt affect the functinality f the device. FMB39 E pin # B uperot -6 Mark:.A Dt dentes pin # E B MMPQ39 E B B3 E3 B E B E OI-6 Mark: MMPQ39 pin # 33 FFB39 / FMB39 / MMPQ39 NPN Multi-hip General Purpse Amplifier This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. urced frm Prcess 3. Abslute Maximum Ratings* T A = unless therwise nted ymbl Parameter alue Units EO llectr-emitter ltage BO llectr-base ltage 6 EBO Emitter-Base ltage 6. I llectr urrent - ntinuus ma T J, T stg Operating and trage Junctin Temperature Range - t + *These ratings are limiting values abve which the serviceability f any semicnductr device may be impaired. NOTE: ) These ratings are based n a maximum junctin temperature f degrees. ) These are steady state limits. The factry shuld be cnsulted n applicatins invlving pulsed r lw duty cycle peratins. 3) All vltages () and currents (A) are negative plarity fr PNP transistrs. Thermal haracteristics T A = unless therwise nted ymbl haracteristic Max Units P D R θja Ttal Device Dissipatin Derate abve Thermal Resistance, Junctin t Ambient Effective Die Each Die FFB39 FMB39 MMPQ39 3 7, mw mw/ /W /W /W 998 Fairchild emicnductr rpratin

2 Electrical haracteristics NPN Multi-hip General Purpse Amplifier T A = unless therwise nted ymbl Parameter Test nditins Min Typ Max Units OFF HARATERITI (BR)EO llectr-emitter Breakdwn ltage I =. ma, I B = (BR)BO llectr-base Breakdwn ltage I = µa, I E = 6 (BR)EBO Emitter-Base Breakdwn ltage I E = µa, I = 6. I BL Base utff urrent E = 3, EB = na I EX llectr utff urrent E = 3, EB = na ON HARATERITI* h FE D urrent Gain I =. ma, E =. MMPQ39 I =. ma, E =. MMPQ39 I = ma, E =. MMPQ39 I = ma, E =. I = ma, E =. E(sat) llectr-emitter aturatin ltage I = ma, I B =. ma I = ma, I B =. ma BE(sat) Base-Emitter aturatin ltage I = ma, I B =. ma I = ma, I B =. ma FFB39 / FMB39 / MMPQ39 MALL IGNAL HARATERITI (MMPQ39 nly) f T urrent Gain - Bandwidth Prduct I = ma, E =, f = MHz b Output apacitance B =., I E =, f = khz ib Input apacitance EB =., I =, f = khz MHz. pf 8. pf *Pulse Test: Pulse Width 3 µs, Duty ycle.% NOTE: All vltages () and currents (A) are negative plarity fr PNP transistrs.

3 Typical haracteristics h - TYPIAL PULED URRENT GAIN FE 3 Typical Pulsed urrent Gain vs llectr urrent -. I - OLLETOR URRENT (ma) E = NPN Multi-hip General Purpse Amplifier - OLLETOR-EMITTER OLTAGE () EAT... llectr-emitter aturatin ltage vs llectr urrent β =. I - OLLETOR URRENT (ma) - FFB39 / FMB39 / MMPQ39 - BAE-EMITTER OLTAGE () BEAT.8.6. Base-Emitter aturatin ltage vs llectr urrent β = -. I - OLLETOR URRENT (ma) - BAE-EMITTER ON OLTAGE () BE(ON).8.6. Base-Emitter ON ltage vs llectr urrent E = -.. I - OLLETOR URRENT (ma) I - OLLETOR URRENT (na) BO. llectr-utff urrent vs Ambient Temperature B = 3 7 T - AMBIENT TEMPERATURE ( ) A APAITANE (pf) 3 apacitance vs Reverse Bias ltage ib f =. MHz b. REERE BIA OLTAGE ()

4 Typical haracteristics NF - NOIE FIGURE (db) 8 6 Nise Figure vs Frequency I =. ma R = Ω I = µa R =. kω I =. ma R = Ω =. E I = µa, R = Ω. f - FREQUENY (khz) NPN Multi-hip General Purpse Amplifier NF - NOIE FIGURE (db) 8 6 Nise Figure vs urce Resistance I =. ma I =. ma I = µa I = µa. R - OURE REITANE ( kω ) FFB39 / FMB39 / MMPQ39 h fe - URRENT GAIN (db) 3 3 urrent Gain and Phase Angle vs Frequency h fe E = I = ma f - FREQUENY (MHz) θ θ - DEGREE P - POWER DIIPATION (W) D.7.. Pwer Dissipatin vs Ambient Temperature OT OI-6 7 TEMPERATURE ( ) TIME (n) Turn-On Time vs llectr urrent. I B= I B= = 3. r t B = I - OLLETOR URRENT (ma) t - RIE TIME (ns) r Rise Time vs llectr urrent T J = = T = J I B= I B= I - OLLETOR URRENT (ma)

5 Ω f Typical haracteristics t - TORAGE TIME (ns) trage Time vs llectr urrent T = J T J = I B= I B= I - OLLETOR URRENT (ma) NPN Multi-hip General Purpse Amplifier t - FALL TIME (ns) Fall Time vs llectr urrent T = J T J = I B= I B= = I - OLLETOR URRENT (ma) FFB39 / FMB39 / MMPQ39 h - URRENT GAIN fe urrent Gain E = f =. khz T A =. I - OLLETOR URRENT (ma) h - OUTPUT ADMITTANE ( mhs) µ e E = f =. khz T A = Output Admittance. I - OLLETOR URRENT (ma) h - INPUT IMPEDANE (k ) ie Input Impedance E = f =. khz T A =.. I - OLLETOR URRENT (ma) h - OLTAGE FEEDBAK RATIO (x ) _ re 7 3 ltage Feedback Rati E = f =. khz T A =. I - OLLETOR URRENT (ma)

6 Test ircuits Duty ycle = % -. 3 ns <. ns.6 NPN Multi-hip General Purpse Amplifier KΩ 3. 7 Ω FIGURE : Delay and Rise Time Equivalent Test ircuit 3. <. pf FFB39 / FMB39 / MMPQ39 < t < µs t.9 7 Ω Duty ycle = % KΩ <. pf - 9. <. ns N96 FIGURE : trage and Fall Time Equivalent Test ircuit

7 TRADEMARK The fllwing are registered and unregistered trademarks Fairchild emicnductr wns r is authrized t use and is nt intended t be an exhaustive list f all such trademarks. AEx Bttmless lfet ROOLT DOME E MO TM Enigna TM FAT FAT Quiet eries FAT DILAIMER LIFE UPPORT POLIY FAIRHILD PRODUT ARE NOT AUTHORIZED FOR UE A RITIAL OMPONENT IN LIFE UPPORT DEIE OR YTEM WITHOUT THE EXPRE WRITTEN APPROAL OF FAIRHILD EMIONDUTOR ORPORATION. As used herein:. Life supprt devices r systems are devices r systems which, (a) are intended fr surgical implant int the bdy, r (b) supprt r sustain life, r (c) whse failure t perfrm when prperly used in accrdance with instructins fr use prvided in the labeling, can be reasnably expected t result in significant injury t the user. PRODUT TATU DEFINITION Definitin f Terms FATr GlbalOptislatr GTO Hie IOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PwerTrench QFET Q QT Optelectrnics Quiet eries ILENT WITHER MART TART uperot -3 uperot -6 uperot -8 yncfet TinyLgic UH X FAIRHILD EMIONDUTOR REERE THE RIGHT TO MAKE HANGE WITHOUT FURTHER NOTIE TO ANY PRODUT HEREIN TO IMPROE RELIABILITY, FUNTION OR DEIGN. FAIRHILD DOE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLIATION OR UE OF ANY PRODUT OR IRUIT DERIBED HEREIN; NEITHER DOE IT ONEY ANY LIENE UNDER IT PATENT RIGHT, NOR THE RIGHT OF OTHER.. A critical cmpnent is any cmpnent f a life supprt device r system whse failure t perfrm can be reasnably expected t cause the failure f the life supprt device r system, r t affect its safety r effectiveness. Datasheet Identificatin Prduct tatus Definitin Advance Infrmatin Preliminary N Identificatin Needed Frmative r In Design First Prductin Full Prductin This datasheet cntains the design specificatins fr prduct develpment. pecificatins may change in any manner withut ntice. This datasheet cntains preliminary data, and supplementary data will be published at a later date. Fairchild emicnductr reserves the right t make changes at any time withut ntice in rder t imprve design. This datasheet cntains final specificatins. Fairchild emicnductr reserves the right t make changes at any time withut ntice in rder t imprve design. Obslete Nt In Prductin This datasheet cntains specificatins n a prduct that has been discntinued by Fairchild semicnductr. The datasheet is printed fr reference infrmatin nly. Rev. G

TO-92 SOT-23 Mark: ZC. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: ZC. TA = 25 C unless otherwise noted. Symbol Parameter Value Units N MMBT N / MMBT B E TO-9 SOT-3 Mark: Z B E This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. Abslute Maximum