Low Noise Transistor LMBT5087LT3G. PNP Silicon LESHAN RADIO COMPANY, LTD. 1/7 ORDERING INFORMATION MAXIMUM RATINGS DEVICE MARKING
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1 Low Noise Transistor PNP ilicon We declare that the material of product compliance with oh requirements. 3 ODEING INFOMATION Device Marking hipping 2Q 3/Tape & eel 1 2 LMBT587LT3G 2Q /Tape & eel OT 23 (TO 236AB) MAXIMUM ATING ating ymbol Value Unit ollector Emitter Voltage V EO 5 Vdc ollector Base Voltage V BO 5 Vdc Emitter Base Voltage V EBO 3. Vdc ollector urrent ontinuous 5 madc DEVIE MAKING =2Q THEMAL HAATEITI 1 BAE 3 OLLETO 2 EMITTE haracteristic ymbol Max Unit Total Device Dissipation F-5 Board (1) P D 225 mw T A =25 Derate above mw/ Thermal esistance, Junction to Ambient θja 556 /W Total Device Dissipation P D 3 mw Alumina ubstrate, (2) T A = 25 Derate above mw/ Thermal esistance, Junction to Ambient θja 417 /W Junction and torage Temperature T J, T stg 55 to +15 ELETIAL HAATEITI (T A = 25 unless otherwise noted) haracteristic ymbol Min Max Unit OFF HAATEITI ollector Emitter Breakdown Voltage V (B)EO 5 Vdc ( = madc, I B = ) ollector Base Breakdown Voltage V (B)BO 5 Vdc ( = µadc, I E = ) ollector utoff urrent BO n Adc (V B = 1 Vdc, I E= ) 1 (V B = 35 Vdc, I E= ) 5 1. F 5 = x.75 x.62 in. 2. Alumina =.4 x.3 x.24 in. 99.5% alumina. 1/7
2 ELETIAL HAATEITI (T A = 25 unless otherwise noted) (ontinued) haracteristic ymbol Min Max Unit ON HAATEITI D urrent Gain h FE ( = µadc, V E = 5. Vdc) 25 8 ( = madc, V E = 5. Vdc) 25 ( = 1 madc, V E = 5. Vdc) 25 ollector Emitter aturation Voltage ( = 1 madc, I B = madc) V E(sat).3 Vdc Base Emitter aturation Voltage V BE(sat) 5 Vdc ( = 1 madc, I B = madc) MALL IGNAL HAATEITI urrent Gain Bandwidth Product ( = µadc, V E= 5. Vdc, f = 2 MHz) f T 4 MHz Output apacitance (V B= 5. Vdc, I E =, f = MHz) obo 4. pf mall ignal urrent Gain h fe 25 9 (= madc, V E = 5.Vdc, f = khz) Noise Figure N F db ( = 2 madc, V E= 5. Vdc, s =1kΩ, f = khz) 2. ( = µadc, V E= 5. Vdc, s =3.kΩ, f = khz) 2. 2/7
3 TYPIAL NOIE HAATEITI (V E = 5. Vdc, T A = 25 ) e n, NOIE VOLTAGE (nv) ma =1 µa 3µA µa 3µA 1. BANDWIDTH = Hz ~ BANDWIDTH = Hz ~ 3. =ma, NOIE UENT (pa) I n µA µa 3µA 1µA k 2.k 5.k 1k k 2.k 5.k 1k f, FEQUENY (Hz) Figure 1. Noise Voltage f, FEQUENY (Hz) Figure 2. Noise urrent NOIE FIGUE ONTOU (V E = 5. Vdc, T A = 25 ), OUE EITANE ( Ω ) M k k k 5k 2k 1k 5.k 2.k.5 db db BANDWIDTH = Hz k 2.dB 3. db 5. db K I, OLLETO UENT (µa) Figure 3. Narrow Band, Hz, OUE EITANE ( Ω ) M k BANDWIDTH = Hz k k 5k 2k 1k 5.k.5 db 2.k db k 2. db 3. db 5. db K I, OLLETO UENT (µa) Figure 4. Narrow Band, khz, OUE EITANE ( Ω ) M k k k 5k 2k 1k 5.k 2.k k.5db K I, OLLETO UENT (µa) Figure 5. Wideband 1 Hz to 15.7kHz db 2.dB 3. db 5. db Noise Figure is Defined as: e n + 4KT + I n 4KT NF = 2 log 1 ( ) 1/ 2 e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise urrent of the Transistor referred to the input. (Figure 4) K = Boltzman s onstant (1.38 x 1 23 j/ K) T = Temperature of the ource esistance ( K) s = ource esistance ( Ω ) 3/7
4 TYPIAL TATI HAATEITI, OLLETO EMITTE VOLTAGE (VOLT) V, VOLTAGE (VOLT) V E I B, BAE UENT (ma) Figure 6. ollector aturation egion T J =25 = ma 1 ma 5 ma ma V /I B = 1 V V E = V V /I B = 1 Figure 1. On Voltages T A = , TEMPEATUE OEFFIIENT (mv/ ) θ V T A = 25 PULE WIDTH =3 µs DUTY YLE<2.% 3µA V E, OLLETO EMITTE VOLTAGE (VOLT) Figure 7. ollector haracteristics *APPLIE for / I B < h FE / 2 θ V for V E(sat) θ VB for V BE 35µA I B = 4 µa µa 15 µa 25 µa µa to to to 125 5µA 55 to Figure 11. Temperature oefficients 4/7
5 TYPIAL DYNAMI HAATEITI t, TIME (ns) V = 3. V /I B = 1 T J= 25 3 t r 2 t V =.5 V BE(off) t, TIME (ns) t s t f V = 3. V /I B = 1 I B1 =I B2 T J= Figure 1. Turn On Time Figure 11. Turn Off Time, UENT GAIN BANDWIDTH PODUT (MHz) f T 3 7 T J = 25 V E =2 V 5. V , APAITANE (pf) ib T J= 25 ob Figure 12. urrent Gain Bandwidth Product V, EVEE VOLTAGE (VOLT) Figure 13. apacitance r ( t ) TANIENT THEMAL EITANE(NOMALIZED) D = FIGUE 16 DUTY YLE, D = t.5 / t D UVE APPLY FO POWE.5 P (pk) PULE TAIN HOWN.2.3 t EAD TIME AT t 1 (EE AN 569) 1.1 Z INGLE PULE θja(t) = r(t).2 θja t 2 T J(pk) T = P Z A (pk) θja(t) k 2.k 5.k 1k 2k 5k k t, TIME (ms) Figure 14. Thermal esponse 5/7
6 , OLLETO UENT (na) V = 3 V EO BO AND V = 3. V BE(off) T J, JUNTION TEMPEATUE ( ) Figure 15. Typical ollector Leakage urrent DEIGN NOTE: UE OF THEMAL EPONE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find Z θja(t), multiply the value obtained from Figure 14 by the steady state value θja. Example: Dissipating 2. watts peak under the following conditions: t 1 = ms, t 2 = 5. ms. (D = ) Using Figure 16 at a pulse width of ms and D =, the reading of r(t) is 2. The peak rise in junction temperature is therefore T = r(t) x P x = 2 x 2. x = 88. (pk) θja For more information, see AN /7
7 OT-23 NOTE: 1. DIMENIONING AND TOLEANING PE ANI A L Y14.5M, ONTOLLING DIMENION: INH. V G B DIM INHE MILLIMETE MIN MAX MIN MAX A B D G H D H K J J K L V inches mm 7/7
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Is Now Part of To learn more about ON Semiconductor, please visit our website at
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45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A
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Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856
NST3906DXV6T1, NST3906DXV6T5. Dual General Purpose Transistor
NST396DXV6T1, NST396DXV6T5 Dual General Purpose Transistor The NST396DXV6T1 device is a spin off of our popular SOT23/SOT323 threeleaded device. It is designed for general purpose amplifier applications
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
MMUN2111LT1 SERIES. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
Bias Resistor Transistor
SEMICONDUCTOR TECHNICAL DATA DTC ~ 8 DTC ~ / /7 DTC / Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
MPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc
TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS
High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features 25 V to V (Min) V
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors
TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features
NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS
- MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching motor control applications. Features Similar
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
E SOT-23 Mark: ED B This device is designed for general purpose amplifier applications at collector currents to 5 ma. Sourced from Process 19. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
DSS5240T. Features. Mechanical Data NEW PRODUCT. Application. Ordering Information (Note 4 & 5) Marking Information
YM NEW PRODUT 40V PNP LOW STURTION TRNSISTOR IN SOT23 Features BV EO > -40V I = -2 high ontinuous ollector urrent I M = -3 Peak Pulse urrent Low Saturation Voltage -225mV Max @ I = -. R E(ST) = 90mΩ at
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD, NJVMJD (NPN), MJD7, NJVMJD7 (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead
MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
LMUN2211LT1 SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160