ECE351 Darlington Push-Pull Amplifier Design

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1 EE35 Darlington Push-Pull Amplifier Design Specify the Design Parameters. Load Resistance R L := 8 ohm Load tolerance 5% R Ltol :=.5 Minimum power to load P L := 4 watt Minimum Load Resistance Maximum Load resistance ( ) R Lmin := R L R Ltol ( ) R Lmax := R L R Ltol Specity the available power supply V := 5 volt Find the worst case peak current to the load needed to deliver the specified power. I Lpeak := 2P L R Lmin I Lpeak =.26 amp

2 Find the worst case peak voltage across the load needed to deliver the specified power. V Lpeak := 2R Lmax P L V Lpeak = 8.98 volt Assume the collector current through transistor UA is ILpeak. Find the Tx specs. For the TIP3 at I Lpeak =.26 amp h FEmin := 25 V BEon :=.8 volt V Esat :=.2 volt Find the worst case peak base current through transistor Q I Lpeak I Bpeak := I Bpeak = ma h FEmin ( ) Assume that IBpeak is approximately the collector current of Tx Q3. Find the Tx specs. I 2peak := I Bpeak For thr 2N394 at I 2peak = ma Note: Vbe was not specified at 4 ma, We will assume it has a value close to the h FE2min := 6 V E2sat :=.3 volt V BE2sat :=.95 volt specified value at 5 ma. alculate the peak base current of Tx U3A. I B2peak := I Bpeak ( h FE2min ) I B2peak = µa This current must be supplied through Rb. alculate the Peak voltage at the base of Q3. Specify a 5% value for the emitter resistor. R Emax := R E.5 R E := R Emin := R E.95 Ω ( ) V Bpeak := I Lpeak R Emax R Lmax V BEon V BE2sat V Bpeak = volt alculate an upper limit on a 5 % resistor for RB. V V Bpeak R B := I B2peak (.5)

3 RB must be less than R B = 3.76 kω hoose a standard 5% resistor for RB. R B := 3.3 kω alculate the power dissipated by the various elements. The power supplied by Vcc is P Vcc := π V I Lpeak P Vcc = watt Find the max and min power dissipated by each resistor. P REmax := 4 I Lpeak 2 R Emax P REmin := 4 I Lpeak 2 R Emin P RLmax := 4 I Lpeak 2 R Lmax P RLmin := 4 I Lpeak 2 R Lmin P REmax =.276 watt P REmin =.25 watt P RLmax = 2.2 watt P RLmin = 2 watt P.RLmin is only /2 the power spec because this is the power supplied to RL from Vcc. The other half comes from Vee. alculate the max power dissipated by the UA. P tip := P Vcc P RLmin P REmin P tip = watt

4 SEMIONDUTOR TEHNIAL DATA Order this document by TIP3A/D... designed for use in general purpose amplifier and switching applications. ollector Emitter Saturation Voltage VE(sat) =.2 Vdc I = 3. Adc ollector Emitter Sustaining Voltage VEO(sus) = 6 Vdc (Min) TIP3A, TIP32A VEO(sus) = 8 Vdc (Min) TIP3B, TIP32B VEO(sus) = Vdc (Min) TIP3, TIP32 High urrent Gain Bandwidth Product ft = 3. MHz I = 5 madc ompact TO 22 AB Package *MAXIMUM RATINGS TIP3A TIP38 TIP3 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol TIP32AÎÎÎÎ TIP32B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ TIP32ÎÎÎ ÎÎÎ Unit ollector Emitter Voltage VEO 6 8 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ Vdc ollector Base Voltage VB 6 8 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ Vdc Emitter Base Voltage VEB 5. Vdc ollector urrent ontinuous I 3. ÎÎÎÎÎÎÎÎÎÎÎ Adc Peak 5. Base urrent ÎÎÎÎ IB ÎÎÎÎÎÎÎÎ. ÎÎÎ Adc ÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation ÎÎÎÎ PD ÎÎÎÎÎÎÎÎÎÎ T = 25 4 ÎÎÎ Watts ÎÎÎÎÎÎÎÎÎÎÎ Derate above 25 ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ.32 W/ Total Power Dissipation TA = 25 ÎÎÎÎÎÎÎÎÎÎÎ 2. ÎÎÎ Watts ÎÎÎÎÎÎÎÎÎÎÎ Derate above 25.6 W/ Unclamped Inductive ÎÎÎÎ E ÎÎÎÎÎÎÎÎ 32 ÎÎÎ mj ÎÎÎÎÎÎÎÎÎÎÎ Load Energy () Operating and Storage Junction TJ, ÎÎÎÎ Tstg 65 to 5 ÎÎÎÎÎÎÎÎÎÎ Temperature Range THERMAL HARATERISTIS haracteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 62.5 /W ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to ase RθJ () I =.8 A, L = 2 mh, P.R.F. = Hz, V = V, RBE = Ω.. ÎÎÎ 3.25 /W *Motorola Preferred Device 3 AMPERE POWER TRANSISTORS OMPLEMENTARY SILION 6 8 VOLTS 4 WATTS ASE 22A 6 TO 22AB Preferred devices are Motorola recommended choices for future use and best overall value. REV Motorola, Inc. 995 Motorola Bipolar Power Transistor Device Data 3

5 ÎÎÎÎÎÎÎÎÎÎÎ ELETRIAL HARATERISTIS (T = 25 unless otherwise noted) haracteristic ÎÎÎÎ Symbol ÎÎÎÎ Min ÎÎÎÎ Max ÎÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎ OFF HARATERISTIS ollector Emitter Sustaining Voltage () VEO(sus)ÎÎÎÎÎÎÎÎÎ Vdc (I = 3 madc, IB = ) TIP3A, TIP32A 6 TIP3B, TIP32B ÎÎÎÎ ÎÎÎÎ TIP3, TIP32 8 ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ollector utoff urrent (VE = 3 Vdc, IB = ) TIP3A, TIP32A ÎÎÎÎ IEO.3 madc ÎÎÎÎ ÎÎÎÎÎÎ ollector utoff urrent (VE = 6 Vdc, IB = ) TIP3B, TIP3 ÎÎÎÎÎÎ TIP32B, TIP32 ÎÎÎÎÎÎ.3.3 ollector utoff urrent ÎÎÎÎ IES ÎÎÎÎ ÎÎÎÎÎÎ µadc (VE = 6 Vdc, VEB = ) TIP3A, TIP32A 2 (VE = 8 Vdc, VEB = ) TIP3B, TIP32B ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ (VE = Vdc, VEB = ) TIP3, TIP32 ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 2 ÎÎÎ 2 Emitter utoff urrent (VBE = 5. Vdc, I = ) ÎÎÎÎ IEBO ÎÎÎÎ ÎÎÎÎ. ÎÎÎ madc ON HARATERISTIS () ÎÎÎÎÎÎÎÎÎÎÎ D urrent Gain (I =. Adc, VE = 4. Vdc) hfe 25 D urrent Gain (I = 3. Adc, VE = 4. Vdc) ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 5 ÎÎÎ ollector Emitter Saturation Voltage (I = 3. Adc, IB = 375 madc) ÎÎÎÎ VE(sat) ÎÎÎÎ ÎÎÎÎ.2 ÎÎÎ Vdc Base Emitter On Voltage (I = 3. Adc, VE = 4. Vdc) ÎÎÎÎ VBE(on) ÎÎÎÎ ÎÎÎÎ.8 ÎÎÎ Vdc DYNAMI HARATERISTIS ÎÎÎÎÎÎÎÎÎÎÎ urrent Gain Bandwidth Product (I = 5 madc, VE = Vdc, ftest =. MHz) ft 3. MHz ÎÎÎÎÎÎÎÎÎÎÎ Small Signal urrent Gain (I =.5 Adc, VE = Vdc, f =. khz) 2 () Pulse Test: Pulse Width 3 µs, Duty ycle 2.%. hfe T 4 TA 4. PD, POWER DISSIPATION (WATTS) T TA T, TEMPERATURE ( ) Figure. Power Derating 6 TURN ON PULSE APPROX V Vin VEB(off) APPROX V Vin t t3 V Vin t 7. ns < t2 < 5 µs t3 < 5 ns RB R jd << eb 4. V SOPE t, TIME ( µ s) V = V V = 3 V I/IB = TJ = 25 VEB(off) = 2. V t2 TURN OFF PULSE DUTY YLE 2.% APPROX 9. V RB and R VARIED TO OBTAIN DESIRED URRENT LEVELS. Figure 2. Switching Time Equivalent ircuit I, OLLETOR URRENT (AMP) Figure 3. Turn On Time 3 2 Motorola Bipolar Power Transistor Device Data

2N394 / MMBT394 / MMPQ394 / PZT394 N 2N394 TO-92 B E MMPQ394 E B E B E B E B SOI-6 MMBT394 SOT-23 Mark: A PZT394 SOT-223 Discrete Power & Signal Technologies B B E E NPN General Purpose Amplifier

Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 4 V V BO ollector-base Voltage 6 V V EBO Emitter-Base Voltage 6.

6 2N394 / MMBT394 / MMPQ394 / PZT394 N 2N394 TO-92 B E MMPQ394 E B E B E B E B SOI-6 MMBT394 SOT-23 Mark: A PZT394 SOT-223 Discrete Power & Signal Technologies B B E E NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to ma as a switch and to MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 4 V V BO ollector-base Voltage 6 V V EBO Emitter-Base Voltage 6. V I ollector urrent - ontinuous 2 ma T J, T stg Operating and Storage Junction Temperature Range -55 to 5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

7 Electrical haracteristics TA = 25 unless otherwise noted NPN General Purpose Amplifier (continued) Symbol Parameter Test onditions Min Max Units OFF HARATERISTIS V (BR)EO ollector-emitter Breakdown Voltage I = ma, I B = 4 V V (BR)BO ollector-base Breakdown Voltage I = µa, I E = 6 V V (BR)EBO Emitter-Base Breakdown Voltage I E = µa, I = 6. V I BL Base utoff urrent V E = 3 V, V EB = 5 na I EX ollector utoff urrent V E = 3 V, V EB = 5 na ON HARATERISTIS* h FE D urrent Gain I =. ma, V E =. V I =. ma, V E =. V I = ma, V E =. V I = 5 ma, V E =. V I = ma, V E =. V V E(sat) ollector-emitter Saturation Voltage I = ma, I B =. ma I = 5 ma, I B = 5. ma V BE(sat) Base-Emitter Saturation Voltage I = ma, I B =. ma I = 5 ma, I B = 5. ma V V V V 2N394 / MMBT394 / MMPQ394 / PZT394 SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Product I = ma, V E = 2 V, f = MHz obo Output apacitance V B = 5. V, I E =, f =. MHz ibo Input apacitance V EB =.5 V, I =, f =. MHz NF Noise Figure (except MMPQ394) I = µa, V E = 5. V, R S =.kω, f= Hz to 5.7 khz 3 MHz 4. pf 8. pf 5. db SWITHING HARATERISTIS (except MMPQ394) t d Delay Time V = 3. V, V BE =.5 V, 35 ns t r Rise Time I = ma, I B =. ma 35 ns t s Storage Time V = 3. V, I = ma 2 ns tf Fall Time I B = I B2 =. ma 5 ns *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% Spice Model NPN (Is=6.734f Xti=3 Eg=. Vaf=74.3 Bf=46.4 Ne=.259 Ise=6.734 Ikf=66.78m Xtb=.5 Br=.737 Nc=2 Isc= Ikr= Rc= jc=3.638p Mjc=.385 Vjc=.75 Fc=.5 je=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=3.2p Itf=.4 Vtf=4 Xtf=2 Rb=)

2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E PNP General Purpose Amplifier

8 2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of µa to ma. Sourced from Process 66. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 4 V V BO ollector-base Voltage 4 V V EBO Emitter-Base Voltage 5. V I ollector urrent - ontinuous 2 ma T J, T stg Operating and Storage Junction Temperature Range -55 to 5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

9 2N396 / MMBT396 / MMPQ396 / PZT396 PNP General Purpose Amplifier (continued) Electrical haracteristics TA = 25 unless otherwise noted Symbol Parameter Test onditions Min Max Units OFF HARATERISTIS V (BR)EO ollector-emitter Breakdown Voltage* I =. ma, I B = 4 V V (BR)BO ollector-base Breakdown Voltage I = µa, I E = 4 V V (BR)EBO Emitter-Base Breakdown Voltage I E = µa, I = 5. V I BL Base utoff urrent V E = 3 V, V BE = 3. V 5 na I EX ollector utoff urrent V E = 3 V, V BE = 3. V 5 na ON HARATERISTIS h FE D urrent Gain * I =. ma, V E =. V I =. ma, V E =. V I = ma, V E =. V I = 5 ma, V E =. V I = ma, V E =. V V E(sat) ollector-emitter Saturation Voltage I = ma, I B =. ma I = 5 ma, I B = 5. ma V BE(sat) Base-Emitter Saturation Voltage I = ma, I B =. ma I = 5 ma, I B = 5. ma V V V V SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Product I = ma, V E = 2 V, f = MHz obo Output apacitance V B = 5. V, I E =, f = khz ibo Input apacitance V EB =.5 V, I =, f = khz NF Noise Figure (except MMPQ396) I = µa, V E = 5. V, R S =.kω, f= Hz to 5.7 khz 25 MHz 4.5 pf. pf 4. db SWITHING HARATERISTIS (except MMPQ396) t d Delay Time V = 3. V, V BE =.5 V, 35 ns t r Rise Time I = ma, I B =. ma 35 ns t s Storage Time V = 3. V, I = ma 225 ns t f Fall Time I B = I B2 =. ma 75 ns *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% Spice Model PNP (Is=.4f Xti=3 Eg=. Vaf=8.7 Bf=8.7 Ne=.5 Ise= Ikf=8m Xtb=.5 Br=4.977 Nc=2 Isc= Ikr= Rc=2.5 jc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 je=8.63p Mje=.3677 Vje=.75 Tr=33.42n Tf=79.3p Itf=.4 Vtf=4 Xtf=6 Rb=)

10 D D Vcc 5.V Vcc B 646.5mV -65.5mV.295V -.3V DN4 DN4 DN4 DN4 RB 3.3k D D2 D3 D mV Q3 Q2N mV mV Q2N396 Q4 Q TIP3 RE RE2 Q2 TIP mV Vo Load 8 Vee - - V2 D = 5 V3 D = 5 B RB2 3.3k -5.V Vee A EE Department 55 Wabash Avenue Terre Haute, IN 4783 Ph: (82) FAX: (253) A Name: Marc E. Herniter lass: EE 35 Size Document Name Rev A <Project Name> Date: Thursday, January 7, 22 Sheet of 2

11 D D Vcc Vcc RB 3.3k Q3 - V2 D = 5 DN4 D Q2N394 Q TIP3 - V3 D = 5 B Transient Analysis - V4 Vin AMPLITUDE = 9.5 FREQUENY = k DN4 DN4 DN4 D2 D3 D4 Q2N396 Q4 RE RE2 Q2 TIP32 Vo Vo Load 8 Vee B RB2 3.3k Vee A EE Department 55 Wabash Avenue Terre Haute, IN 4783 Ph: (82) FAX: (253) A Name: Marc E. Herniter lass: EE 35 Size Document Name Rev A <Project Name> Date: Thursday, January 7, 22 Sheet of 2

12 ** Profile: "SHEMATI-Transient" [ :\Website\Rose_lasses\EE35\Homework\Winter-2\HW5\darlington... Date/Time run: /7/2 2:3:4 Temperature: A (A) darlington push-pull amplifier-shemati-transient.dat (active).a Load urrent A -.A -2.A s.5ms.ms.5ms 2.ms I(Load) Time Date: January 7, 22 Page Time: 2:32:28

13 ** Profile: "SHEMATI-Transient" [ :\Website\Rose_lasses\EE35\Homework\Winter-2\HW5\darlington... Date/Time run: /7/2 2:3:4 Temperature: 27. V (B) darlington push-pull amplifier-shemati-transient.dat (active) Input and Output Voltages 5V V -5V -V s.2ms.4ms.6ms.8ms.ms.2ms.4ms.6ms.8ms 2.ms V(Vo) V(Vin) Time Date: January 7, 22 Page 2 Time: 2:32:28

17 - V2 D = 5 I D = 4m - V3 D = 5 D DN4 Q TIP3 Vo D2 DN4 R 8 Vin Q3 Q2N396 Transient Analysis - V AMPLITUDE = FREQUENY = k Q2 TIP3

18 ** Profile: "SHEMATI-Trans" [ :\Documents and Settings\herniter\My Documents\Website\Rose_lasses\E... Date/Time run: /9/6 9:25:36 Temperature: 27. (A) Trans.dat (active) 2V 8V 4V V -4V -8V -2V s.ms 2.ms 3.ms 4.ms 5.ms V(Vin) V(Vo) Time Date: January 9, 26 Page Time: 9:27:3

TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units 2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general