SIEGET 25 BFP420. NPN Silicon RF Transistor

Transcription

1 NPN Silicon RF Transistor For High Gain Low Noise Amplifiers For Oscillators up to GHz Noise Figure F = 1.05 at 1.8 GHz Outstanding G ms = 20 at 1.8 GHz Transition Frequency f T = 25 GHz Gold metalization for high reliability SIEGET 25-Line Siemens Grounded Emitter Transistor- 25 GHz f T -Line ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (8-mm taped) Pin Configuration Package 1) BFP420 AMs Q62702-F1591 B E C E SOT343 Maximum Ratings Parameter Symbol Unit Collector-emitter voltage VCEO 4.5 V Collector-base voltage VCBO 15 V Emitter-base voltage VEBO 1.5 V Collector current IC 35 ma Base current IB 3 ma Total power dissipation, Ts 7 C 2)3) Ptot 160 mw Junction temperature Tj 150 C Ambient temperature range TA C C Storage temperature range Tstg C C Thermal Resistance Junction-soldering point 2) Rth JS 270 K/W 1) For detailed information see chapter Package 2) T S is measured on the emitter lead at the soldering point to the pcb. 3) P tot due to Maximum Ratings. At typical Ts 80 C: P tot = 250 mw due to thermical characteristics. Semiconductor Group 1 Edition A06, 09/96

2 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 ma Collector-cutoff current VCB = 5 V, IE = 0 Emitter base cuttoff current VEB = 1.5 V, IC = 0 DC current gain IC = 20 ma, VCE = 4 V V(BR)CEO V ICBO na IEBO µa hfe AC Characteristics Transition frequency IC = 30 ma, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz Noise figure IC = 5 ma, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt Power gain IC = 20 ma, VCE = 2 V, f = 1.8 GHz, ft GHz Ccb pf Cce pf Ceb pf F G ms 1) ZS =ZSopt, ZL = ZLopt Insertion power gain S IC = 20 ma, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50Ω Third order intercept point at output IP m IC = 20 ma, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt, Z L = Z Lopt 1 Compression point IC = 20 ma, VCE = 2 V, f = 1.8 GHz, P m ZS = ZSopt, Z L = Z Lopt S 1) Gms = 21 S12 Semiconductor Group 2 Edition A06, 09/96

3 Total Power Dissipation Permissible Pulse Power Dissipation versus Soldering Point Temperature versus On-Time (V CE0max = 4.5 V) Ptot 600 mw Ptot_max Ptot_DC according maximum ratings C 150 Ts tp Transition Frequency versus Collector Current f = 2 GHz Collector-base Capacitance versus Collector-base Voltage V BE = 0 V, f = 1MHz ft GHz 25 Vce= 3 V, 4 V 1 V 2 V Ccb pf V ma Ic 1 2 V 4 Vcb Semiconductor Group 3 Edition A06, 09/96

4 Power Gain versus Frequency V CE = 2 V, I C = 20 ma Power Gain versus Collector Current V CE = 2 V f= 1 GHz Gma Gms S21 ² 50 Gma Gms GHz 30 Gms 15 3 GHz 4 GHz 5 GHz 20 S21 ² Gma 6 GHz GHz Power Gain versus Collector Voltage I C = 20 ma f 20 ma Ic 30 Gma Gms f= 1 GHz 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz V 4 Vce Semiconductor Group 4 Edition A06, 09/96

5 Noise Figure versus Collector Current VCE = 2 V, ZS = ZSopt Noise Figure versus Collector Current VCE = 2 V, f = 1.8 GHz F GHz 5.0 GHz 4.0 GHz F GHz GHz 1.8 GHz 2 Zs=50 Ohms GHz 1 1 Zsopt ma Ic 20 ma Ic Noise Figure versus Frequency VCE = 2 V, I C = 5 ma / 20 ma, ZS = ZSopt Source Impedance for min. Noise Figure versus Frequency V CE = 2 V, I C = 5 ma / 20 ma F ma +j 0 +j25 +j GHz 3 GHz 4 GHz GHz 0.9 GHz 5 ma 0 +j0 1 5 ma -j 5 GHz 6 GHz 20 ma 0.5 -j25 -j GHz f -j50 Semiconductor Group 5 Edition A06, 09/96

6 Common Emitter S-Parameters ƒ S11 S 21 S 12 S 22 GHz MAG ANG MAG ANG MAG ANG MAG ANG V CE = 2 V, I C = 20 ma V CE = 2 V, I C = 5 ma Common Emitter Noise Parameters ƒ Fmin 1) G a 1) Γ opt R N r n F 50Ω 2) S ) GHz MAG ANG Ω - V CE = 2 V, I C = 5 ma ) Input matched for minimum noise figure, output for maximum gain 2) ZS=ZL=50Ω For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a SIEMENS Application Notes CD-ROM or see Internet: Semiconductor Group 6 Edition A06, 09/96

7 SPICE Parameters: Transistor Chip Data T502 (Berkeley-SPICE 2G.6 Syntax): IS = fa BF = NF = VAF = V IKF = A ISE = fa NE = BR = NR = VAR = V IKR = A ISC = fa NC = RB = OHM IRB = ma RBM = OHM RE = OHM RC = 0.5 OHM CJE = ff VJE = V MJE = TF = ps XTF = VTF = V ITF = 1.0 ma PTF = 0 deg CJC = ff VJC = V MJC = XCJC = TR = ns CJS = 0 ff VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 ev XTI = FC = Tnom = 300 K C'-E'- Diode Data (Berkeley-SPICE 2G.6 Syntax): IS = 3.5 fa N = RS = Ω All parameters are ready to use, no scaling is necessary. Package Equivalent Circuit: CCB SOT343-3: B LBO LBI CBE B' transistor chip E' LEI C' LCI C'-E'-diode CCE LCO C LBI = 0.47 nh LBO = 0.53 nh LEI = 0.23 nh LEO = 0.05 nh LCI = 0.56 nh LCO = 0.58 nh CBE = 136 ff CCE = 134 ff CCB = 6.9 ff LEO E valid up to 6 GHz The SOT343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil- und Satellitenfunktechnik (IMST) 1996 SIEMENS AG For more examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a SIEMENS Application Notes CD-ROM or see Internet: Semiconductor Group 7 Edition A06, 09/96

8 For non-linear simulation: Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need simulation of the reverse characteristics, add the diode with the C'-E'-diode data between collector and emitter. Simulation of the package is not necessary for frequencies < 0 MHz. For higher frequencies add the wiring of the package equivalent circuit around the non-linear transistor and diode model. Note: - This transistor is constructed in a common emitter configuration. This feature causes an additional, reverse biased diode between emitter and collector, which does not effect normal operation. Transistor Schematic Diagram The common emitter configuration shows the following advantages: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted on the copper emitter leadframe. Please note, that the broadest lead is the emitter lead. - The AC-Characteristics are verified by random sampling. Semiconductor Group 8 Edition A06, 09/96

9 Package Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D München Siemens AG All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se,not for applications,processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Semiconductor Group 9 Edition A06, 09/96