PRELIMINARY DATA SHEET PACKAGE OUTLINE
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1 PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES LOW NOISE: :NF = 1.7 db TYP at f = GHz,, lc = 3 ma :NF = 1.5 db TYP at f = GHz, VCE = 3 V, lc = 3 ma HIGH GAIN: : S1E = 3.5 db TYP at f = GHz,, lc = 3 ma : S1E = 8.5 db TYP at f = GHz, VCE = 3 V, lc = ma 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DIFFERENT BUILT-IN TRANSISTORS (: NE688, : NE685) DESCRIPTION The has two different built-in transistors for low cost amplifier and oscillator applications up to L and S band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER PACKAGE OUTLINE TS6 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = µa.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = µa.1 hfe DC Current Gain 1 at, IC = 3 ma 145 ft Gain Bandwidth (1) at, IC = 3 ma, f = GHz GHz ft Gain Bandwidth () at VCE = 3 V, IC = ma, f = GHz GHz 9 Cre Feedback Capacitance at VCB = 1 V, IE =, f = 1 MHz pf S1E Insertion Power Gain (1) at, IC =3 ma, f = GHz db S1E Insertion Power Gain () at VCE = 3 V, IC = ma, f = GHz db 6.5 NF Noise Figure (1) at, IC = 3 ma, f = GHz db NF Noise Figure () at VCE = 3 V, IC = 7 ma, f = GHz db 1.5 ICBO Collector Cutoff Current at VCB = 5 V, IE = µa.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = µa.1 hfe DC Current Gain 1 at VCE = 3 V, IC = ma ft Gain Bandwidth at VCE = 3 V, IC = ma, f = GHz GHz 1 Cre Feedback Capacitance at VCB = 3 V, IE =, f = 1 MHz pf.4.7 S1E Insertion Power Gain at VCE = 3 V, IC = ma, f = GHz db OUTLINE DIMENSIONS (Units in mm).6 ±.1.45 NF Noise Figure at VCE = 3 V, IC = 3 ma, f = GHz db Notes: 1. Pulsed measurement, pulse width 35 µs, duty cycle %.. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter.. ±. 1.3 PIN CONNECTIONS 1. Collector (). Emitter () 3. Collector () 4. Base () 5. Emitter () 6. Base () Package Outline TS6 (Top View) ± ± ~.1.13 ±.5 California Eastern Laboratories (All Leads) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
2 ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V IC Collector Current ma PT Total Power Dissipation mw TJ Junction Temperature C TSTG Storage Temperature C Note: 1. Operation in excess of any one of these parameters may result in permanent damage.. When operating both devices, the power dissipation for either device should not exceed 1 mw. TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE elements in total Free Air when using 1 element when using elements 5 15 Ambient Temperature, TA ( C) vs. BASE TO EMITTER VOLTAGE to +15 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1. Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) Total Power Dissipation, PT (mw) elements in total Free Air when using 1 element when using elements 5 15 Ambient Temperature, TA ( C) vs. BASE TO EMITTER VOLTAGE VCE = 3 V
3 TYPICAL PERFORMANCE CURVES (TA = 5 C) DC Current Gain, hfe Gain Bandwidth Product, ft (GHz) vs. COLLECTOR TO EMITTER VOLTAGE 3 µa 18 µa 16 µa 14 µa µa µa Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. 8 µa 6 µa 4 µa lb = µa GAIN BANDWIDTH PRODUCT vs. f= GHz DC Current Gain, hfe Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. Collector Current lc (ma) GAIN BANDWIDTH PRODUCT vs Gain Bandwidth Product, ft (GHz) vs. COLLECTOR TO EMITTER VOLTAGE µa 4 µa 3 µa µa lb= µa VCE = 3 V 5 V f = GHz 5 V 3 V
4 TYPICAL PERFORMANCE CURVES (TA = 5 C) Insertion Power Gain, S1E (db) Noise Figure, NF (db) Feedback Capacitance, Cre (pf) INSERTION POWER GAIN vs. f= GHz NOISE FIGURE vs. 3 1 f = GHz f = 1 GHz FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz NOISE FIGURE vs. Collector to Base Voltage, VCB (V) Collector to Base Voltage, VCB (V) Insertion Power Gain, S1E (db) Noise Figure, NF (db) Feedback Capacitance, Cre (pf) INSERTION POWER GAIN vs. f = GHz V 3 V VCE = 3 V f = GHz FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz 1 5
5 TYPICAL PERFORMANCE CURVES (TA = 5 C) Maximum Available Power Gain, MAG (db) Insertion Power Gain, S1E (db) Noise Figure, NF (db) MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY IS1EI MAG Frequency, f (GHz) NOISE FIGURE vs. FREQUENCY lc = 5 ma lc = 5 ma.1 1. Frequency, f (GHz) Maximum Available Power Gain, MAG (db) Insertion Power Gain, S1E (db) MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY MAG IS1EI lc = 5 ma Frequency, f (GHz)
6 TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = 1 ma, Z = 5 Ω FREQUENCY S11 S1 S1 S VCE = 3 V, IC = 1 ma, Z = 5 Ω FREQUENCY S11 S1 S1 S
7 TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = 5 ma, Z = 5 Ω FREQUENCY S11 S1 S1 S VCE = 3 V, IC = 5 ma, Z = 5 Ω FREQUENCY S11 S1 S1 S
8 TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = ma, Z = 5 Ω FREQUENCY S11 S1 S1 S VCE = 3 V, IC = ma, Z = 5 Ω FREQUENCY S11 S1 S1 S
9 TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = ma, Z = 5 Ω FREQUENCY S11 S1 S1 S BUILT-IN TRANSISTORS 3-pin small mini mold part No. NE6883 NE6853 The UPA836TF features the and in inverted positions. ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING -T1 3 Tape & Reel
10 BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Parameters IS 3.8e-16 7e-16 MJC BF XCJC 6 NF 1 1 CJS VAF 8 15 VJS IKF.6.19 MJS ISE 3.8e e-13 FC.75 NE TF 11e-1 3e-1 BR XTF NR VTF VAR ITF.61.1 IKR.6 Infinity PTF 5 ISC 3.5e-16 TR 3e-1 1e-9 NC 1.6 EG RE XTB RB 6.14 XTI 3 3 RBM KF 1.5e-14 IRB.1.9 AF 1. 1 RC 4. CJE.796e-1.4e-1 VJE MJE.38 CJC 49e-1.18e-1 VJC (1) Gummel-Poon Model Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency:.1 to 3. GHz Bias: VCE = V to 5 V, IC = 1 ma to ma Date: 11/98 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at for this data.
11 SCHEMATIC Pin_1 Pin_ Pin_3 LC.5 nh C_C1E1.5 pf LE.5 nh LC.5 nh BUILT-IN TRANSISTORS 3-pin small mini mold part No. NE6883 NE6853 CCE1.19 pf LE1.65 nh C_E1C.5 pf CCB.8 pf CCE CCEPKG.7 pf C_C1B.14 pf.1 pf.15 pf CCB1.1 pf CCBPKG1 LB1 C_E1B.3 pf LE.4 nh.5 nh.95 nh LB nh.7 pf CCBPKG C_B1B.5 pf C_BE.5 pf MODEL RANGE Frequency:.1 to 3. GHz Bias: VCE = V to 5 V, IC = 1 ma to ma Date: 11/98 ORDERING INFORMATION Pin_6 Pin_5 Pin_4 PART NUMBER QUANTITY PACKAGING -T1 3 Tape & Reel LB LE.5 nh LB.5 nh The UPA836TF features the and in inverted positions. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 459 Patrick Henry Drive Santa Clara, CA (48) Telex FAX (48) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -/99
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