Type Marking Pin Configuration Package BFP450 ANs 1 = B 2 = E 3 = C 4 = E SOT343
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1 NPN Silicon RF Transistor For medium power amplifiers Compression point P = +9 m at. GHz maximum available gain G ma = 5.5 at. GHz Noise figure F =.5 at. GHz Transition frequency f T = GHz Gold metallization for high reliability SIEGET 5 GHz f T Line VPS55 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package ANs = B = E = C = E SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO.5 V Collectorbase voltage V CBO 5 Emitterbase voltage V EBO.5 Collector current ma Base current I B Total power dissipation T S 9 C ) P tot 5 mw Junction temperature T j 5 C Ambient temperature T A Storage temperature T stg Thermal Resistance Junction soldering point ) R thjs K/W TS is measured on the emitter lead at the soldering point to the pcb For calculation of RthJA please refer to Application Note Thermal Resistance Aug
2 Electrical Characteristics at T A = 5 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collectoremitter breakdown voltage V (BR)CEO.5 5 V = ma, I B = Collectorbase cutoff current BO na V CB = 5 V, I E = Emitterbase cutoff current I EBO µa V EB =.5 V, = DC current gain = 5 ma, V CE = V h FE 5 5 AC characteristics (verified by random sampling) Transition frequency f T GHz = 9 ma, V CE = V, f = GHz = 9 ma, V CE = V, f = GHz 5 7 Collectorbase capacitance C cb.. pf V CB = V, f = MHz Collectoremitter capacitance C ce. V CE = V, f = MHz Emitterbase capacitance C eb.75 V EB = V, f = MHz Noise figure F.5 = ma, V CE = V, Z S = Z Sopt, f =. GHz Power gain, maximum available ) G ma 5.5 = 5 ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f =. GHz Insertion power gain S.5 = 5 ma, V CE = V, f =. GHz, Z S = Z L = 5 Third order intercept point IP 9 m = 5 ma, V CE = V, Z S =Z Sopt, Z L =Z Lopt, f =. GHz Compression point = 5 ma, V CE = V, f =. GHz, Z S =Z Sopt, Z L =Z Lopt P 9 G ma = S / S (k(k ) / ) Aug
3 SPICE Parameters (GummelPoon Model, BerkleySPICE G. Syntax) : Transistor Chip Data IS = fa VAF =.5 V NE =.55 VAR =. V NC =.75 RBM =.59 CJE =.7 ff TF = 7.5 ps ITF =.755 ma VJC =.7 V TR =.9 ns MJS = XTI = BF = 7. IKF = 95 A BR =.5 IKR = 7 A RB = 5. RE = VJE =.959 V XTF =.997 PTF = deg MJC = CJS = F XTB = FC =.97 NF =.795 ISE =. fa NR =.9 ISC =.9 fa IRB =. ma RC = MJE =.7 VTF =. V CJC = 9.5 ff XCJC = VJS =.75 V EG =. ev TNOM K C'E'Diode Data (BerkleySPICE G. Syntax) : IS = 5 fa N =.5 RS = 5 All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: C CB L BI =. nh L BO =. nh B L BO L BI B Transistor Chip E C L CI C E Diode L CO C L EI =. nh L EO =.5 nh L CI =.9 nh C BE C CE L CO =. nh L EI C BE = ff C CB =. ff L EO C CE = ff E EHA79 Valid up to GHz The SOT package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of Infineon Technologies AG by: Institut für Mobilund Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: Aug
4 For nonlinear simulation: Use transistor chip parameters in Berkeley SPICE G. syntax for all simulators. If you need simulation of the reverse characteristics, add the diode with the C'E' diode data between collector and emitter. Simulation of package is not necessary for frequencies < MHz. For higher frequencies add the wiring of package equivalent circuit around the nonlinear transistor and diode model. Note: This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. B C E E EHA77 Transistor Schematic Diagram The common emitter configuration shows the following advantages: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. Common Emitter S and Noiseparameter For detailed S and Noiseparameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CDROM or see Internet: Aug
5 Total power dissipation P tot = f (T S ) Ptot 5 mw Transition frequency f T = f ( ) f = GHz V CE = parameter in V ft GHz to.5.75 C 5 T S Permissible Pulse Load R thjs = f (t p ) ma Permissible Pulse Load P totmax /P totdc = f (t p ) RthJS K/W D = 7 5 s t p Ptotmax / PtotDC D = s t p 5 Aug
6 Power gain G ma, G ms, S = f ( f ) V CE = V, = 5 ma Power gain G ma, G ms = f ( ) V CE = V f = parameter in GHz G G ms G.9. S G ma GHz. f Power gain G ma, G ms = f (V CE ) = 5 ma f = Parameter in GHz ma Collectorbase capacitance C cb = f (V CB ) f = MHz..9 pf G. Ccb V.5 V CE V. V CB Aug
7 Noise figure F = f ( ) V CE = V, Z S = Z Sopt Noise figure F = f ( ) V CE = V, f =. GHz F F f = GHz f = GHz f =. GHz f =. GHz f =.9 GHz.5. ZS = 5Ohm ZS = ZSopt. 5 7 ma Noise figure F = f ( f ) V CE = V, Z S = Z Sopt ma Source impedance for min. Noise Figure versus Frequency V CE = V, = ma / 5 ma +j5 +j5 +j. +j F.5.GHz 5.9GHz 5. IC = 5 ma IC = ma j j5.ghz GHz GHz ma 5mA j j GHz.5 f 7 Aug
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