BFR93A/BFR93AR/BFR93AW. Silicon NPN Planar RF Transistor. Vishay Semiconductors. Applications. Features. Absolute Maximum Ratings

Size: px
Start display at page:

Download "BFR93A/BFR93AR/BFR93AW. Silicon NPN Planar RF Transistor. Vishay Semiconductors. Applications. Features. Absolute Maximum Ratings"

Transcription

1 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features High power gain High transition frequency Low noise figure BFR93A Marking: +R2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR93AR Marking: +R5 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR93AW Marking: WR2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage V CBO 2 V Collector-emitter voltage V CEO 12 V Emitter-base voltage V EBO 2 V Collector current I C 5 ma Total power dissipation T amb 6 C P tot 2 mw Junction temperature T j 15 C Storage temperature range T stg 65 to +15 C Rev. 3, 2-Jan-99 1 (9)

2 Maximum Thermal Resistance T amb = 25 C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 2 x 1.5) mm 3 R thja 45 K/W plated with 35m Cu Electrical DC Characteristics T amb = 25 C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current V CE = 2 V, V BE = I CES 1 A Collector-base cut-off current V CB = 1 V, I E = I CBO 1 na Emitter-base cut-off current V EB = 2 V, I C = I EBO 1 A Collector-emitter breakdown voltage I C = 1 ma, I B = V (BR)CEO 12 V Collector-emitter saturation voltage I C = 5 ma, I B = 5 ma V CEsat.1.4 V DC forward current transfer ratio V CE = 5 V, I C = 3 ma h FE Electrical AC Characteristics T amb = 25 C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Transition frequency V CE = 5 V, I C = 3 ma, f = 5 MHz f T 6 GHz Collector-base capacitance V CB = 1 V, f = 1 MHz C cb.45 pf Collector-emitter capacitance V CE = 5 V, f = 1 MHz C ce.2 pf Emitter-base capacitance V EB =.5 V, f = 1 MHz C eb 1.5 pf Noise figure V CE = 8 V, Z S = 5, f = 8 MHz, F 1.6 db I C = 5 ma V CE = 8 V, Z S = 5, f = 8 MHz, F 2.1 db I C = 25 ma Power gain V CE = 8 V, I C = 25 ma, Z S = 5, Z L = Z Lopt, f = 8 MHz G pe 14 db Linear output voltage two tone intermodulation test V CE = 8 V, I C = 25 ma, d IM = 6 db, f 1 = 86 MHz, f 2 = 81 MHz, Z S = Z L = 5 V 1 = V 2 26 mv Third order intercept point V CE = 8 V, I C = 25 ma, f = 8 MHz IP 3 31 dbm 2 (9) Rev. 3, 2-Jan-99

3 Common Emitter S Parameters Z = 5 T amb = 25 C, unless otherwise specified S11 S21 S12 S22 V CE /V I C /ma f/mhz deg deg deg deg Rev. 3, 2-Jan-99 3 (9)

4 S11 S21 S12 S22 V CE /V I C /ma f/mhz deg deg deg deg (9) Rev. 3, 2-Jan-99

5 Typical Characteristics (T amb = 25 C unless otherwise specified) P tot Total Power Dissipation ( mw ) f Transition Frequency ( MHz ) T T amb Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature V CE =5V f=5mhz I C Collector Current ( ma ) Figure 2. Transition Frequency vs. Collector Current C cb Collector Base Capacitance ( pf ) F Noise Figure ( db ) f=1mhz V CB Collector Base Voltage ( V ) Figure 3. Collector Base Capacitance vs. Collector Base Voltage V CE =8V f=8mhz Z S = I C Collector Current ( ma ) Figure 4. Noise Figure vs. Collector Current Rev. 3, 2-Jan-99 5 (9)

6 V CE = 8 V, I C = 25 ma, Z = 5 S 11 S 12 j.5 j j GHz 6 j.2 2. GHz ÁÁÁ 1..2 ÁÁ 1 ÁÁ 2 ÁÁ 5 j j.2.1 j j.5 j j Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient S 21 S j.5 j j j.2 j GHz 2 4 ÁÁ.2 ÁÁ.5 ÁÁ 1 ÁÁ j.2 2. GHz.1 j j.5 j j2 Figure 6. Forward transmission coefficient Figure 8. Output reflection coefficient 6 (9) Rev. 3, 2-Jan-99

7 Dimensions of BFR93A in mm Dimensions of BFR93AR in mm Rev. 3, 2-Jan-99 7 (9)

8 Dimensions of BFR93AW in mm (9) Rev. 3, 2-Jan-99

9 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () Rev. 3, 2-Jan-99 9 (9)

10 This datasheet has been download from: Datasheets for electronics components.

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu Silicon NPN Planar RF Transistor BFW92 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features High power gain Low noise figure 3 2 94 9308

More information

RF-amplifier up to GHz range specially for wide band antenna amplifier.

RF-amplifier up to GHz range specially for wide band antenna amplifier. Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. RF-amplifier up to GHz range specially for wide band antenna amplifier. Features High power

More information

Part Ordering code Marking Remarks Package BFR91A BFR91AGELB-GS08 BFR91A Packed in Bulk TO-50(3)

Part Ordering code Marking Remarks Package BFR91A BFR91AGELB-GS08 BFR91A Packed in Bulk TO-50(3) Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1

More information

BFR91. Silicon NPN Planar RF Transistor. Vishay Semiconductors

BFR91. Silicon NPN Planar RF Transistor. Vishay Semiconductors Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1

More information

Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor TELEFUNKEN Semiconductors BFR 9 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition

More information

BFR 93 / BFR 93 R. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance

BFR 93 / BFR 93 R. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor BFR 93 / BFR 93 R Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure

More information

Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise applications such as preamplifiers, mixers and oscillators in analog and digital

More information

Part Ordering code Marking Remarks Package BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3)

Part Ordering code Marking Remarks Package BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3) Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1

More information

Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor Not for new design, this product will be obsoleted soon BFQ81 Silicon NPN Planar RF Transistor Features Small feedback capacitance Low noise figure Low cross modulation Lead (Pb)-free component e3 2 1

More information

BFQ67 / BFQ67R / BFQ67W

BFQ67 / BFQ67R / BFQ67W Not for new design, this product will be obsoleted soon Silicon NPN Planar RF Transistor BFQ67 / BFQ67R / BFQ67W Features Small feedback capacitance Low noise figure High transition frequency Lead (Pb)-free

More information

BPV11F. Silicon NPN Phototransistor VISHAY. Vishay Semiconductors

BPV11F. Silicon NPN Phototransistor VISHAY. Vishay Semiconductors VISHAY BPV11F Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR

More information

Part Ordering code Marking Remarks MMBT2222A MMBT2222A-GS18 or MMBT2222A-GS08 1P Tape and Reel

Part Ordering code Marking Remarks MMBT2222A MMBT2222A-GS18 or MMBT2222A-GS08 1P Tape and Reel Small Signal Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. This transistor is also available in the TO-92 case with the type designation MPS2222A.

More information

BPW85. Silicon NPN Phototransistor. Description. Features. Applications. Absolute Maximum Ratings

BPW85. Silicon NPN Phototransistor. Description. Features. Applications. Absolute Maximum Ratings Silicon NPN Phototransistor Description is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T (ø 3 mm) plastic package. Due to its waterclear epoxy the device

More information

Part Type differentiation Ordering code Remarks 2N3904 2N3904-BULK or 2N3904-TAP Bulk / Ammopack

Part Type differentiation Ordering code Remarks 2N3904 2N3904-BULK or 2N3904-TAP Bulk / Ammopack Small Signal Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor 2N3906 is recommended. On special request,

More information

BPW17N. Silicon NPN Phototransistor. Vishay Semiconductors. Description. Features. Applications Detector in electronic control and drive circuits

BPW17N. Silicon NPN Phototransistor. Vishay Semiconductors. Description. Features. Applications Detector in electronic control and drive circuits Silicon NPN Phototransistor BPW17N Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 lens. With a lead center to center spacing of 2.54mm and

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output TCRT0/ TCRT1010 Reflective Optical Sensor with Transistor Output Description The TCRT0/ TCRT1010 have a compact construction where the emitting-light source and the detector are arranged in the same direction

More information

BP104. Silicon PIN Photodiode. Vishay Semiconductors

BP104. Silicon PIN Photodiode. Vishay Semiconductors Silicon PIN Photodiode Description BP4 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5

More information

Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, T L =constant R thja 110 K/W

Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, T L =constant R thja 110 K/W Silicon Epitaxial Planar Z Diodes Features Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications Voltage stabilization 94

More information

BPV11. Silicon NPN Phototransistor. Vishay Semiconductors

BPV11. Silicon NPN Phototransistor. Vishay Semiconductors Silicon NPN Phototransistor Description is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output Reflective Optical Sensor with Transistor Output Description The CNY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence

More information

TV Vertical Deflection Output Amplifier

TV Vertical Deflection Output Amplifier TELEFUNKEN Semiconductors TDA 73 TV Vertical Deflection Output Amplifier Technology: Bipolar Features Output peak current, I = 2. A Flyback current, peak to peak, I 3 = A Thermal protection, T j 0 C Case:

More information

BPW41N. Silicon PIN Photodiode. Vishay Semiconductors

BPW41N. Silicon PIN Photodiode. Vishay Semiconductors Silicon PIN Photodiode Description BPW4N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs

More information

BPW17N. Silicon NPN Phototransistor. Vishay Semiconductors

BPW17N. Silicon NPN Phototransistor. Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 lens. With a lead center to center spacing of 2.54 mm and a package

More information

CNY70. Reflective Optosensor with Transistor Output. Description. Applications. Features. Pin Connection

CNY70. Reflective Optosensor with Transistor Output. Description. Applications. Features. Pin Connection Reflective Optosensor with Transistor Output Description The CNY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Ambient Light Sensor Description TEPT5600 is a silicon NPN epitaxial planar

More information

TEPT5600. Ambient Light Sensor. Vishay Semiconductors

TEPT5600. Ambient Light Sensor. Vishay Semiconductors Ambient Light Sensor Description TEPT56 is a silicon NPN epitaxial planar photo transistor in a standard T-1 3/4" plastic package. Peak of responsivity is in the visible spectrum. Infrared spectrum is

More information

Voltage stabilization

Voltage stabilization Silicon Epitaxial Planar Z Diodes Features Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications Voltage stabilization 94

More information

GaAs Infrared Emitting Diode in Miniature (T ) Package

GaAs Infrared Emitting Diode in Miniature (T ) Package GaAs Infrared Emitting Diode in Miniature (T ) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity

More information

Diode capacitance V R = 0 V, f = 1 MHz, E = 0 C D 1.2 nf V R = 5 V, f = 1 MHz, E = 0 C D 400 pf Dark Resistance V R = 10 mv R D 38 GΩ Optical

Diode capacitance V R = 0 V, f = 1 MHz, E = 0 C D 1.2 nf V R = 5 V, f = 1 MHz, E = 0 C D 400 pf Dark Resistance V R = 10 mv R D 38 GΩ Optical Silicon PN Photodiode BPW21R E-MAIL: Description BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its

More information

TEFT4300. Silicon NPN Phototransistor. Vishay Semiconductors

TEFT4300. Silicon NPN Phototransistor. Vishay Semiconductors TEFT43 Silicon NPN Phototransistor Description TEFT43 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ( 3 mm) plastic package. The epoxy package itself

More information

(U813BS-SP, U813BSE-SP)

(U813BS-SP, U813BSE-SP) 1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High

More information

BPW41N. Silicon PIN Photodiode. Vishay Semiconductors

BPW41N. Silicon PIN Photodiode. Vishay Semiconductors Silicon PIN Photodiode Description BPW4N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs

More information

S186P. Silicon PIN Photodiode. Vishay Semiconductors

S186P. Silicon PIN Photodiode. Vishay Semiconductors S86P Silicon PIN Photodiode Description S86P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs

More information

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero High Speed Infrared Emitting Diode, 87 nm, GaAlAs Double Hetero Description The series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

More information

Part Ordering code Type Marking Remarks BAT41 BAT41-TR or BAT41-TAP BAT41 Tape and Reel/Ammopack

Part Ordering code Type Marking Remarks BAT41 BAT41-TR or BAT41-TAP BAT41 Tape and Reel/Ammopack Small Signal Schottky Diode Features For general purpose applications This diode features low turn-on voltage and high breakdown voltage. This device e2 is protected by a PN junction guard ring against

More information

TDA 1072 A. AM Receiver Circuit. Preliminary Information. Technology: Bipolar Features. TELEFUNKEN Semiconductors. Controlled RF preamplifier

TDA 1072 A. AM Receiver Circuit. Preliminary Information. Technology: Bipolar Features. TELEFUNKEN Semiconductors. Controlled RF preamplifier TELEFUNKEN Semiconductors TDA 1072 A AM Receiver Circuit Technology: Bipolar Features Controlled RF preamplifier Multiplicative balanced mixer Separate oscillator with amplitude control IF amplifier with

More information

BPW46L. Silicon PIN Photodiode. Vishay Semiconductors

BPW46L. Silicon PIN Photodiode. Vishay Semiconductors Silicon PIN Photodiode Description BPW46L is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared

More information

Part Ordering code Type Marking Remarks BAT41 BAT41-TR or BAT41-TAP BAT41 Tape and Reel/Ammopack

Part Ordering code Type Marking Remarks BAT41 BAT41-TR or BAT41-TAP BAT41 Tape and Reel/Ammopack Small Signal Schottky Diode Features For general purpose applications This diode features low turn-on voltage and high breakdown voltage. This device e2 is protected by a PN junction guard ring against

More information

Part Ordering code Type Marking Remarks BAS85 BAS85-GS18 or BAS85-GS08 - Tape and Reel

Part Ordering code Type Marking Remarks BAS85 BAS85-GS18 or BAS85-GS08 - Tape and Reel Small Signal Schottky Diode Features For general purpose applications This diode features low turn-on voltage e2 The devices are protected by a PN junction guard ring against excessive voltage, such as

More information

GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T 1) Package

GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T 1) Package TSAL6 GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T 1) Package Description TSAL6 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.

More information

TDS.31.. Standard 7 Segment Display 10 mm. Vishay Semiconductors. Description. Features. Applications

TDS.31.. Standard 7 Segment Display 10 mm. Vishay Semiconductors. Description. Features. Applications TDS.3.. Standard 7 Segment Display mm Color Type Circuitry TDSR35. Common anode TDSR36. Common cathode Orange red TDSO35. Common anode Orange red TDSO36. Common cathode Yellow TDSY35. Common anode Yellow

More information

Part Ordering code Remarks TSMS3700-GS08 TSMS3700-GS08 MOQ: 7500 pcs TSMS3700-GS18 TSMS3700-GS18 MOQ: 8000 pcs

Part Ordering code Remarks TSMS3700-GS08 TSMS3700-GS08 MOQ: 7500 pcs TSMS3700-GS18 TSMS3700-GS18 MOQ: 8000 pcs TSMS37 Infrared Emitting Diode, 95 nm, GaAs Description TSMS37 is a standard GaAs infrared emitting diode in a miniature PLCC-2 package. Its flat window provides a wide aperture, making it ideal for use

More information

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical

More information

Type Ordering Code Remarks

Type Ordering Code Remarks Silicon Epitaxial Planar Z Diodes BZX85C... Features Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications Voltage stabilization

More information

BPV10NF. High Speed Silicon PIN Photodiode. Vishay Semiconductors

BPV10NF. High Speed Silicon PIN Photodiode. Vishay Semiconductors BPVNF High Speed Silicon PIN Photodiode Description BPVNF is a high sensitive and wide bandwidth PIN photodiode in a standard T-¾ plastic package. The black epoxy is an universal IR filter, spectrally

More information

Part Ordering code Marking Remarks BAW56-V BAW56-V-GS18 or BAW56-V-GS08 JD Tape and Reel

Part Ordering code Marking Remarks BAW56-V BAW56-V-GS18 or BAW56-V-GS08 JD Tape and Reel Small Signal Switching Diode, Dual Features Silicon Epitaxial Planar Diode Fast switching dual diode with common e anode This diode is also available in other configurations including: a single with type

More information

Part Ordering code Marking Remarks BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel

Part Ordering code Marking Remarks BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel Small Signal Switching Diode, Dual Features Fast switching speed High conductance Surface mount package ideally suited for automatic insertion Connected in series Lead (Pb)-free component Component in

More information

TEKS5400. Silicon Photodetector with Logic Output VISHAY. Vishay Semiconductors

TEKS5400. Silicon Photodetector with Logic Output VISHAY. Vishay Semiconductors Silicon Photodetector with Logic Output Description is a high sensitive photo Schmitt Trigger in a sideview molded plastic package with spherical lens. It is designed with an infrared filter to spectrally

More information

Extended Type Number Package Remarks U2535B-FP. Supply voltage for PIN diode Integrator C 3 C 2. Figure 1. Block diagram

Extended Type Number Package Remarks U2535B-FP. Supply voltage for PIN diode Integrator C 3 C 2. Figure 1. Block diagram Preamplifier for IR Remote Control Description Features The IC U2535B is a complete IR receiver for data communication. The PIN photodiode converts the transmitted IR telegram into electronic input signals.

More information

TDA4439. Video IF Amplifier for Multistandard TV and VTR. Technology: Bipolar. Features. Case: DIP18. TELEFUNKEN Semiconductors

TDA4439. Video IF Amplifier for Multistandard TV and VTR. Technology: Bipolar. Features. Case: DIP18. TELEFUNKEN Semiconductors Video IF Amplifier for Multistandard TV and VTR Technology: Bipolar Features Standard B/G-L suitable, processes negatively and positively modulated IF-signals with equal polarity of the output signal Ultra

More information

BPV23NF(L) Silicon PIN Photodiode. Vishay Semiconductors

BPV23NF(L) Silicon PIN Photodiode. Vishay Semiconductors Silicon PIN Photodiode Description BPV23NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection FEATURES Isolation test voltage 5 V RMS A C 6 5 B C Long term stability Industry standard dual-in-line package Lead (Pb-free component NC E Component in accordance to RoHS /95/EC and WEEE /96/EC i79 AGENCY

More information

Part Ordering code Marking Remarks BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel

Part Ordering code Marking Remarks BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel Small Signal Switching Diode, Dual Features Fast switching speed High conductance Surface mount package ideally suited for automatic insertion Connected in series Lead (Pb)-free component Component in

More information

BAS81 / 82 / 83. Small Signal Schottky Diodes. Vishay Semiconductors. Features Integrated protection ring against static discharge

BAS81 / 82 / 83. Small Signal Schottky Diodes. Vishay Semiconductors. Features Integrated protection ring against static discharge Small Signal Schottky Diodes Features Integrated protection ring against static discharge e2 Low capacitance Low leakage current Low forward voltage drop Very low switching time Lead (Pb)-free component

More information

TCLT10.. Series. Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package VISHAY. Vishay Semiconductors

TCLT10.. Series. Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package VISHAY. Vishay Semiconductors TCLT.. Series Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package Features SMD Low profile 4 lead package High Isolation 5 V RMS CTR flexibility available see order information Special

More information

TDSG / O / Y11.. Standard 7- Segment Display 7 mm VISHAY. Vishay Semiconductors

TDSG / O / Y11.. Standard 7- Segment Display 7 mm VISHAY. Vishay Semiconductors VISHAY TDSG / O / Y.. Standard 7- Segment Display 7 mm Description The TDS... series are 7 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance

More information

TDSG / O / Y31.. Standard 7- Segment Display 10 mm VISHAY. Vishay Semiconductors

TDSG / O / Y31.. Standard 7- Segment Display 10 mm VISHAY. Vishay Semiconductors VISHAY TDSG / O / Y3.. Standard 7- Segment Display mm Description The TDS.3.. series are mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance

More information

Optocoupler, Phototransistor Output, no Base Connection

Optocoupler, Phototransistor Output, no Base Connection CNY7F Optocoupler, Phototransistor FEATURES 86 DESCRIPTION The CNY7F is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector

More information

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero VISHAY TSHA44. High Speed Infrared Emitting Diode, 87 nm, GaAlAs Double Hetero Description The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear,

More information

TCMT11.. Series/ TCMT4100

TCMT11.. Series/ TCMT4100 TCMT.. Series/ TCMT4 Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package Features Low profile package (half pitch) AC Isolation test voltage 375 V RMS Low coupling capacitance

More information

1N5221B to 1N5267B. Small Signal Zener Diodes. Vishay Semiconductors

1N5221B to 1N5267B. Small Signal Zener Diodes. Vishay Semiconductors Small Signal Zener Diodes Features Silicon Planar Power Zener Diodes Standard Zener voltage tolerance is ± 5 % e2 These diodes are also available in Mini- MELF case with the type designationtzm522...tzm5267,

More information

Parameter Test condition Symbol Value Unit Power dissipation T L 25 C P tot 500 mw Z-current I Z P tot /V Z ma

Parameter Test condition Symbol Value Unit Power dissipation T L 25 C P tot 500 mw Z-current I Z P tot /V Z ma Small Signal Zener Diodes Features Silicon Planar Power Zener Diodes Standard Zener voltage tolerance is ± 5 % e2 These diodes are also available in Mini- MELF case with the type designation TZM522...

More information

TLMC310. Low Current SMD LED VISHAY. Vishay Semiconductors

TLMC310. Low Current SMD LED VISHAY. Vishay Semiconductors VISHAY TLMC31. Low Current SMD LED Description These new devices have been designed to meet the increasing demand for low current SMD LEDs. The package of the TLMC31. is the PLCC-2 (equivalent to a size

More information

Optocoupler, Phototransistor Output, AC Input

Optocoupler, Phototransistor Output, AC Input K84P, K824P, K844P Optocoupler, Phototransistor FEATURES Endstackable to 2.54 mm (.") spacing 722_2 C E A C 4pin DESCRIPTION 8 pin The K84P, K824P, K844P consist of a phototransistor optically coupled

More information

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Part Symbol Value Unit

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Part Symbol Value Unit Ultra Fast Sinterglass Diode Features High temperature metallurgically bonded construction Cavity-free glass passivated junction Superfast recovery time for high efficiency Low forward voltage, high current

More information

Optocoupler, Phototransistor Output, Low Input Current

Optocoupler, Phototransistor Output, Low Input Current Optocoupler, Phototransistor Output, SFH68A/SFH686 FEATURES Good CTR linearity depending on forward current Low CTR degradation High collector emitter voltage, V CEO = 55 V i796 DESCRIPTION A C 2 The SFH68A

More information

CNY17 Series. Optocoupler with Phototransistor Output. Description. Applications. TELEFUNKEN Semiconductors

CNY17 Series. Optocoupler with Phototransistor Output. Description. Applications. TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors CNY17 Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY17 Series consist of a phototransistor optically coupled

More information

BPV22NF(L) Silicon PIN Photodiode. Vishay Semiconductors

BPV22NF(L) Silicon PIN Photodiode. Vishay Semiconductors Silicon PIN Photodiode Description BPV22NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally

More information

MCL103A / 103B / 103C

MCL103A / 103B / 103C Small Signal Schottky Diodes Features Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Lead (Pb)-free component Component in accordance to

More information

ZMY3V9 to ZMY100. Zener Diodes. Vishay Semiconductors

ZMY3V9 to ZMY100. Zener Diodes. Vishay Semiconductors ZMYV9 to ZMY Zener Diodes Features Silicon Planar Power Zener Diodes For use in stablilizing and clipping circuits with high power rating e The Zener voltages are graded according to the international

More information

Optocoupler, Photodarlington Output, AC Input, Internal R BE

Optocoupler, Photodarlington Output, AC Input, Internal R BE Vishay Semiconductors Optocoupler, Photodarlington Output, AC FEATURES Internal R BE for better stability A/C 1 6 NC BV CEO < 60 V i179040 DESCRIPTION C/A 2 NC 3 The IL766B is a bidirectional input, optically

More information

CNY17 Series. Optocoupler with Phototransistor Output. Description. Applications. Order Nos. and Classification table is on sheet 2.

CNY17 Series. Optocoupler with Phototransistor Output. Description. Applications. Order Nos. and Classification table is on sheet 2. Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY17 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting

More information

Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. TSAL61 High Power Infrared Emitting Diode, 95 nm, GaAlAs/GaAs Description

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. High Speed Infrared Emitting Diode in T-1¾ Package TSHG8200 Description

More information

SD103AW-V/103BW-V/103CW-V

SD103AW-V/103BW-V/103CW-V Small Signal Schottky Diodes Features The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low e3 logic

More information

MMSZ4681-V to MMSZ4717-V

MMSZ4681-V to MMSZ4717-V Small Signal Zener Diodes Features Silicon planar Zener diodes Standard Zener voltage tolerance is ± 5 %. e3 High temperature soldering guaranteed: 26 C/4x s set terminals These diodes are also available

More information

Parameter Test condition Symbol Value Unit Junction ambient l = 4 mm, T L = constant R thja 300 K/W

Parameter Test condition Symbol Value Unit Junction ambient l = 4 mm, T L = constant R thja 300 K/W Small Signal Zener Diodes Features Very sharp reverse characteristic Low reverse current level Very high stability e2 Low noise Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE

More information

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS i17906 Optocoupler, Phototransistor Output, DESCRIPTION The SFH610A (DIP) and SFH6106 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have

More information

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Part Symbol Value Unit

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Part Symbol Value Unit Fast Avalanche Sinterglass Diode Features Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Lead (Pb)-free component Component in accordance to RoHS

More information

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSAL74 High Power Infrared Emitting Diode, 95 nm, GaAlAs/GaAs Description TSAL74 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison

More information

Low Current 7 mm 7-Segment Display

Low Current 7 mm 7-Segment Display Low Current 7 mm 7-Segment Display TDSL50, TDSL60 DESCRIPTION 9235 The TDSL.0 series are 7 mm character seven segment low current LED displays in a very compact package. The displays are designed for a

More information

CNY75(G) Series. Optocoupler with Phototransistor Output. Description. Applications. Order Nos. and Classification table is on sheet 2.

CNY75(G) Series. Optocoupler with Phototransistor Output. Description. Applications. Order Nos. and Classification table is on sheet 2. Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting

More information

Ambient Light Sensor, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released

Ambient Light Sensor, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released Ambient Light Sensor, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q11 Released Description TEMT6X1 ambient light sensor plays a key role in power savings strategies by controlling LCD

More information

MMBZ4681-V to MMBZ4717-V

MMBZ4681-V to MMBZ4717-V Small Signal Zener Diodes Features Silicon planar Zener diodes. Standard Zener voltage tolerance is ± 5 %. Other tolerances are available upon e3 request. These diodes are also available in DO35 case with

More information

Low Current 10 mm 7-Segment Display

Low Current 10 mm 7-Segment Display Low Current mm 7-Segment Display TDSL3, TDSL36 936 DESCRIPTION The TDSL3. series are mm character seven segment low current LED displays in a very compact package. The displays are designed for a viewing

More information

TLHE / G / K / P510. High Intensity LED, 5 mm Untinted Non-Diffused VISHAY. Vishay Semiconductors

TLHE / G / K / P510. High Intensity LED, 5 mm Untinted Non-Diffused VISHAY. Vishay Semiconductors VISHAY TLHE / G / K / P5. High Intensity LED, 5 mm Untinted Non-Diffused Description The TLH.5.. series is a clear, non diffused 5 mm LED for outdoor application. These clear lamps utilize the highly developed

More information

BAS19-V / 20-V / 21-V

BAS19-V / 20-V / 21-V Small Signal Switching Diodes, High Voltage BAS19-V / 20-V / 21-V Features Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. e3 These diodes

More information

Part Ordering code Type Marking Remarks BAT85S BAT85S-TR or BAT85S-TAP BAT85S Tape and Reel/Ammopack

Part Ordering code Type Marking Remarks BAT85S BAT85S-TR or BAT85S-TAP BAT85S Tape and Reel/Ammopack BAT85S Small Signal Schottky Diode Features Integrated protection ring against static discharge Very low forward voltage AEC-Q0 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE

More information

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications

More information

TSHG6400. High Speed IR Emitting Diode in T-1¾ Package. Vishay Semiconductors

TSHG6400. High Speed IR Emitting Diode in T-1¾ Package. Vishay Semiconductors High Speed IR Emitting Diode in T-¾ Package TSHG64 Description TSHG64 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHG6

More information

SD103A/103B/103C. Small Signal Schottky Diodes. Vishay Semiconductors

SD103A/103B/103C. Small Signal Schottky Diodes. Vishay Semiconductors Small Signal Schottky Diodes Features The SD3 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. e2 The low forward voltage drop and fast switching make

More information

S07B / 07D / 07G / 07J / 07M

S07B / 07D / 07G / 07J / 07M Small Signal Fast Switching Diode, High Voltage Features For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 C/ 10 seconds

More information

Linear Optocoupler, PCMCIA Package

Linear Optocoupler, PCMCIA Package Linear Optocoupler, PCMCIA Package i179085 DESCRIPTION The family of linear optocoupler consist of an IRLED optically coupled to two photodiodes. The emitter is located such that both photodiodes receive

More information

Optocoupler, Phototransistor Output, AC Input, with Base Connection

Optocoupler, Phototransistor Output, AC Input, with Base Connection i79025 DESCRIPTION The is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in reverse parallel and coupled to a silicon NPN phototransistor detector. These

More information

Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released

Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released TEMD511X1 Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q11 Released Description TEMD511X1 is a high speed and high sensitive PIN photodiode. It is a miniature

More information

TEA1007. Simple Phase Control Circuit. Description. Features. Block Diagram

TEA1007. Simple Phase Control Circuit. Description. Features. Block Diagram Simple Phase Control Circuit Description Integrated circuit, TEA1007, is designed as a general phase control circuit in bipolar technology. It has an internal supply voltage limitation. With typical 150

More information

Optocoupler, Photodarlington Output, High Gain, With Base Connection

Optocoupler, Photodarlington Output, High Gain, With Base Connection Optocoupler, Photodarlington Output, High Gain, With Base Connection Features Very high current transfer ratio, 500 % Min. High isolation resistance, 0 Ω Typical Standard plastic DIP package Lead-free

More information

TCLT10.. Series. Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package. Vishay Semiconductors

TCLT10.. Series. Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package. Vishay Semiconductors TCLT.. Series Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package Features SMD Low profile 4 lead package High Isolation 5 V RMS CTR flexibility available see order information e3 Special

More information

Reflective Optical Sensor with PIN Photodiode Output. Parameter Test condition Symbol Value Unit Reverse Voltage V R 5 V Forward current I F 100 ma

Reflective Optical Sensor with PIN Photodiode Output. Parameter Test condition Symbol Value Unit Reverse Voltage V R 5 V Forward current I F 100 ma Reflective Optical Sensor with PIN Photodiode Output TCND5 Description The TCND5 is a reflective sensor that includes an infrared emitter and PIN photodiode in a surface mount package which blocks visible

More information

Optocoupler, Photodarlington Output, High Gain, with Base Connection

Optocoupler, Photodarlington Output, High Gain, with Base Connection Optocoupler, Photodarlington Output, 4N32/4N33 FEATURES A 6 B Very high current transfer ratio, 500 % min. High isolation resistance, 0 Ω typical C NC 2 3 5 4 C E Standard plastic DIP package Lead (Pb)-free

More information