Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
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1 Product description The is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min = 1 db at 5.5 GHz, 3 V, 6 ma High gain G ms = 21 db at 5.5 GHz, 3 V, 15 ma OIP 3 = 24 dbm at 5.5 GHz, 3 V, 15 ma Product validation Qualified for industrial applications according to the relevant tests of JEDEC47//22. Potential applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel / H6327XTSA1 TSFP = B 2 = E 3 = C 4 = E R7s 3 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v3.
2 Table of contents Table of contents Product description Feature list Product validation Potential applications Device information Table of contents Absolute maximum ratings Thermal characteristics DC characteristics General AC characteristics Frequency dependent AC characteristics Characteristic DC diagrams Characteristic AC diagrams Package information TSFP Revision history Disclaimer Datasheet 2 v3.
3 Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings T A = 25 C (unless otherwise specified) Min. Max. Collector emitter voltage V CEO 4. V Open base 3.5 T A = -55 C, open base Collector emitter voltage V CES 13 E-B short circuited Collector base voltage V CBO 13 Open emitter Emitter base voltage V EBO 1.2 Open collector Base current I B 4 ma Collector current I C 45 Total power dissipation 1) P tot 16 mw T S 12 C Junction temperature T J 15 C Storage temperature T Stg -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v3.
4 Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Min. Typ. Max. Junction - soldering point R thjs 3 K/W P tot [mw] T S [ C] Figure 1 Total power dissipation P tot = f(t S ) Datasheet 4 v3.
5 3 3.1 DC characteristics Table 4 DC characteristics at T A = 25 C Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO V I C = 1 ma, I B =, open base Collector emitter leakage current I CES ) na V CE = 13 V, V BE = 4 1) V CE = 5 V, V BE =, E-B short circuited Collector base leakage current I CBO 1 4 1) V CB = 5 V, I E =, open emitter Emitter base leakage current I EBO 1 4 1) V EB =.5 V, I C =, open collector DC current gain h FE V CE = 3 V, I C = 25 ma, pulse measured 3.2 General AC characteristics Table 5 General AC characteristics at T A = 25 C Min. Typ. Max. Transition frequency f T 45 GHz V CE = 3 V, I C = 25 ma, f = 2 GHz Collector base capacitance C CB.8.12 pf V CB = 3 V, V BE =, f = 1 MHz, emitter grounded Collector emitter capacitance C CE.3 V CE = 3 V, V BE =, f = 1 MHz, base grounded Emitter base capacitance C EB.4 V EB =.5 V, V CB =, f = 1 MHz, collector grounded 1 Maximum values not limited by the device but by the short cycle time of the 1% test Datasheet 5 v3.
6 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T s in a 5 Ω system, T A = 25 C. Top View VC Bias-T OUT E C VB IN Bias-T B (Pin 1) E Figure 2 Table 6 AC characteristics, V CE = 3 V, f = 45 MHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output 1 db gain compression point at output G ms S 21 2 Min. Typ. Max NF min.4 G ass 26.5 OIP OP 1dB 6.5 db dbm I C = 15 ma I C = 6 ma Z S = Z L = 5 Ω, I C = 15 ma Datasheet 6 v3.
7 Table 7 AC characteristics, V CE = 3 V, f = 9 MHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output 1 db gain compression point at output Table 8 G ms S 21 2 Min. Typ. Max NF min.45 G ass 25 OIP 3 23 OP 1dB 8 AC characteristics, V CE = 3 V, f = 1.5 GHz db dbm I C = 15 ma I C = 6 ma Z S = Z L = 5 Ω, I C = 15 ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output 1 db gain compression point at output Table 9 G ms S 21 2 Min. Typ. Max NF min.5 G ass 23 OIP OP 1dB 8 AC characteristics, V CE = 3 V, f = 1.9 GHz db dbm I C = 15 ma I C = 6 ma Z S = Z L = 5 Ω, I C = 15 ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output 1 db gain compression point at output G ms S 21 2 Min. Typ. Max NF min.55 G ass 21.5 OIP OP 1dB 8 db dbm I C = 15 ma I C = 6 ma Z S = Z L = 5 Ω, I C = 15 ma Datasheet 7 v3.
8 Table 1 AC characteristics, V CE = 3 V, f = 2.4 GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output 1 db gain compression point at output Table 11 G ms S 21 2 Min. Typ. Max NF min.6 G ass OIP 3 24 OP 1dB 8 AC characteristics, V CE = 3 V, f = 3.5 GHz db dbm I C = 15 ma I C = 6 ma Z S = Z L = 5 Ω, I C = 15 ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output 1 db gain compression point at output Table 12 G ms S 21 2 Min. Typ. Max NF min.75 G ass 17.5 OIP OP 1dB 8 AC characteristics, V CE = 3 V, f = 5.5 GHz db dbm I C = 15 ma I C = 6 ma Z S = Z L = 5 Ω, I C = 15 ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output 1 db gain compression point at output G ms S 21 2 Min. Typ. Max NF min.8 G ass 14 OIP 3 24 OP 1dB 8 db dbm I C = 15 ma I C = 6 ma Z S = Z L = 5 Ω, I C = 15 ma Datasheet 8 v3.
9 Table 13 AC characteristics, V CE = 3 V, f = 1 GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output 1 db gain compression point at output G ma S 21 2 Min. Typ. Max NF min 1.5 G ass 1 OIP OP 1dB 8 db dbm I C = 15 ma I C = 6 ma Z S = Z L = 5 Ω, I C = 15 ma Note: G ms = IS 21 / S 12 I for k < 1; G ma = IS 21 / S 12 I(k-(k 2-1) 1/2 ) for k > 1. In order to get the NF min values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP 3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 5 Ω from.2 MHz to 12 GHz. Datasheet 9 v3.
10 3.4 Characteristic DC diagrams I C [ma] µA 9µA 8µA 7µA 6µA 5µA 4µA 3µA µa 1µA V [V] CE Figure 3 Collector current vs. collector emitter voltage I C = f(v CE ), I B = parameter 1 3 h FE I C [A] Figure 4 DC current gain h FE = f(i C ), V CE = 3 V Datasheet 1 v3.
11 I C [ma] V [V] BE Figure 5 Collector current vs. base emitter forward voltage I C = f(v BE ), V CE = 2 V I B [ma] V [V] BE Figure 6 Base current vs. base emitter forward voltage I B = f(v BE ), V CE = 2 V Datasheet 11 v3.
12 I B [A] V EB [V] Figure 7 Base current vs. base emitter reverse voltage I B = f(v EB ), V CE = 2 V Datasheet 12 v3.
13 3.5 Characteristic AC diagrams V f T [GHz] V 2.5V 2.V 1.V I C [ma] Figure 8 Transition frequency f T = f(i C ), f = 2 GHz, V CE = parameter OIP 3 [dbm] V, 24MHz 3V, 24MHz 2V, 55MHz 3V, 55MHz I [ma] C Figure 9 3rd order intercept point OIP 3 = f(i C ), Z S = Z L = 5 Ω, V CE, f = parameters Datasheet 13 v3.
14 I C [ma] V CE [V] Figure 1 3rd order intercept point at output OIP 3 [dbm] = f(i C, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz Figure 11 Compression point at output OP 1dB [dbm] = f(i C, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz Datasheet 14 v3.
15 .2.16 C CB [pf] V [V] CB Figure 12 Collector base capacitance C CB = f(v CB ), f = 1 MHz G ms G [db] 15 S 21 2 G ma 1 5 Figure f [GHz] Gain G ma, G ms, IS 21 I 2 = f(f), V CE = 3 V, I C = 15 ma Datasheet 15 v3.
16 GHz G [db] GHz.9GHz 1.5GHz 1.9GHz 2.4GHz 3.5GHz 5.5GHz 1.GHz I C [ma] Figure 14 Maximum power gain G max = f(i C ), V CE = 3 V, f = parameter in GHz G max [db] GHz.45GHz.9GHz 1.5GHz 1.9GHz 2.4GHz 3.5GHz 5.5GHz 1.GHz V [V] CE Figure 15 Maximum power gain G max = f(v CE ), I C = 15 ma, f = parameter in GHz Datasheet 16 v3.
17 to 1 GHz mA 15mA Figure 16 Input reflection coefficient S 11 = f(f), V CE = 3 V, I C = 6 / 15 ma to 1 GHz mA 15mA Figure 17 Output reflection coefficient S 22 = f(f), V CE = 3 V, I C = 6 / 15 ma Datasheet 17 v3.
18 mA 15mA Figure 18 Source impedance for minimum noise figure Z S,opt = f(f), V CE = 3 V, I C = 6 / 15 ma NF min [db] I C = 15mA I C = 6.mA Figure f [GHz] Noise figure NF min = f(f ),V CE = 3 V, Z S = Z S,opt, I C = 6 / 15 ma Datasheet 18 v3.
19 NF min [db] f = 1GHz f = 8GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 1.5GHz f =.9GHz f =.45GHz I C [ma] Figure Noise figure NF min = f(i C ), V CE = 3 V, Z S = Z S,opt, f = parameter in GHz NF5 [db] f = 1GHz f = 8GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 1.5GHz f =.9GHz f =.45GHz I C [ma] Figure 21 Note: Noise figure NF 5 = f(i C ), V CE = 3 V, Z S = 5 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T A = 25 C. Datasheet 19 v3.
20 Package information TSFP Package information TSFP-4-1 Figure 22 Package outline Figure 23 Foot print Figure 24 Marking layout example Figure 25 Tape dimensions Datasheet v3.
21 Revision history Revision history Document version Date of release Description of changes 3. New datasheet layout. Datasheet 21 v3.
22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG Munich, Germany 18 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? erratum@infineon.com Document reference IFX-akc IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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