Data sheet, BGA614, Nov BGA614. Silicon Germanium Broadband MMIC Amplifier MMIC. Secure Mobile Solutions Silicon Discretes. Never stop thinking.
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1 Data sheet, BGA61, Nov. 3 BGA61 Silicon Germanium Broadband MMIC Amplifier MMIC Secure Mobile Solutions Silicon Discretes Never stop thinking.
2 Edition 311 Published by Infineon Technologies AG, St.MartinStrasse 53, D8151 München Infineon Technologies AG 3. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
3 BGA61 Data sheet Revision History: 311 Previous Version: 57 Page Subjects (major changes since last revision) Preliminary status removed For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
4 Silicon Germanium Broadband MMIC Amplifier BGA61 Features Cascadable 5Ωgain block 3 dbbandwidth: DC to. GHz with 18.5 db typical gain at 1. GHz Compression point P 1dB = 1 dbm at. GHz Noise figure F 5Ω =.3 db at. GHz Absolute stable 7 GHz f T Silicon Germanium technology Applications 3 1 VPS565 Driver amplifier for GSM/PCS/CDMA/UMTS Broadband amplifier for SATTV & LNBs Broadband amplifier for CATV IN, 1 Out, 3 Description The BGA61 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of ma. The BGA61 is based on Infineon Technologies B7HF Silicon Germanium technology. GND,, ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking Chip BGA61 SOT33 BOs T565 Data sheet 311
5 BGA61 Maximum Ratings Parameter Symbol Value Unit Device voltage V D 3 V Device current 8 ma Current into pin In I In.7 ma Input power 1) P IN 1 dbm Total power dissipation, T S < 1 C ) P tot mw Junction temperature T j 15 C Ambient temperature range T A C Storage temperature range T STG C Thermal resistance: junctionsoldering point R th JS K/W Notes: All Voltages refer to GNDNode 1) Valid for Z S =Z L =5Ω, V CC =5V, R Bias =6Ω ) T S is measured on the ground lead at the soldering point Electrical Characteristics at T A =5 C (measured in test circuit specified in fig. 1) V CC =5V, R Bias =6Ω, Frequency=GHz, unless otherwise specified Parameter Symbol min. typ. max. Unit Insertion power gain f =.1GHz f = 1.GHz f =.GHz Noise Figure (Z S =5Ω) f =.1GHz f = 1.GHz f =.GHz S 1 F 5Ω Output Power at 1dB Gain Compression P 1dB 1 dbm Output Third Order Intercept Point OIP 3 5 dbm Input Return Loss RL In 19 db Output Return Loss RL Out db Total Device Current ma db db Data sheet 5 311
6 BGA61 Data sheet Reference Plane V CC = 5V In BiasT In GND R Bias = 6Ω GND Top View Out Reference Plane V D BiasT Out Caution: Device Voltage V D at Pin Out! V D = V CC R Bias Fig.1: Test Circuit for Electrical Characteristics and SParameters SParameter V CC =5V, R Bias =6Ω (see Electrical Characteristics for conditions) Frequency S11 S11 S1 S1 S1 S1 S S [GHz] Mag Ang Mag Ang Mag Ang Mag Ang Data sheet 6 311
7 BGA61 Data sheet Power Gain S 1, G ma = f(f) V CC = 5V, R Bias = 6Ω, I C = ma Matching S 11, S = f(f) V CC = 5V, R Bias = 6Ω, I C = ma G ma S S 1, G ma [db] S 11, S [db] 15 S 6 S Frequency [GHz] Frequency [GHz] Power Gain S 1 = f( ) f = parameter in GHz Output Compression Point P 1dB = f( ), f = GHz S 1 [db] P 1dB [dbm] [ma] 6 8 [ma] Data sheet 7 311
8 BGA61 Data sheet Device Current = f(v CC ) R Bias = parameter in Ω Device Current = f(t A ) V CC = 5V,R Bias = parameter in Ω [ma] [ma] V CC [V] T A [ C] Noise figure F = f(f) V = 5V, R = 6Ω, Z = 5Ω CC Bias S T = parameter in C A F [db] C +5 C C Package Outline ±. 1.3 ± B M B +. acc. to DIN 678.1±.1.9 ±.1.1 max M A 1.5 ±.1 A GPS Frequency [GHz] Data sheet 8 311
9 This datasheet has been download from: Datasheets for electronics components.
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Application Note No. 124
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BAS70.../BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04W BAS70-04S BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W
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