Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143

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1 Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from ma to 80 ma Power amplifier for DECT and PCN systems f T = 7.5 GHz, NF min =.3 db at 900 MHz Pbfree (RoHS compliant) package Qualification report according to AECQ available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP96 RIs = C = E 3 = B 4 = E SOT43 Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO Collector current I C 50 ma Base current I B 5 Total power dissipation ) P tot 700 mw T S 77 C Junction temperature T J 50 C Ambient temperature T A Storage temperature T Stg Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 5 K/W T S is measured on the collector lead at the soldering point to the pcb For the definition of R thjs please refer to Application Note AN077 (Thermal Resistance Calculation)

2 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B = 0 Collectoremitter cutoff current I CES 0 µa V CE = 0 V, V BE = 0 Collectorbase cutoff current I CBO 0 na V CB = V, I E = 0 Emitterbase cutoff current I EBO µa V EB = V, I C = 0 DC current gain I C = 50 ma, V CE = 8 V, pulse measured h FE

3 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency I C = 70 ma, V CE = 8 V, f = 500 MHz f T GHz Collectorbase capacitance V CB = V, f = MHz, V BE = 0, emitter grounded Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded C cb pf C ce 0.35 C eb 3.9 Minimum noise figure NF min db I C = 0 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz.3 f =.8 GHz.3 Power gain, maximum available ) G ma I C = 50 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz 6.5 f =.8 GHz.5 Transducer gain S e db I C = 50 ma, V CE = 8 V, Z S = Z L = 50Ω, f = 900 MHz 3 f =.8 GHz 7 Third order intercept point at output ) I C = 50 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 0.9 GHz db Compression point I C = 50 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 0.9 GHz IP 3 3 dbm P db 9 G ma = S / S (k(k²) / ) IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0. MHz to GHz

4 Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) mw K/W 600 Ptot 500 RthJS D = C 50 T S s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D = s 0 t p

5 Package SOT43 BFP

6 Edition 0096 Published by Infineon Technologies AG 876 Munich, Germany 009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (< Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered

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