BFP760. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

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1 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, RF & Protection Devices

2 Edition Published by Infineon Technologies AG Munich, Germany 213 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 BFP76, Low Noise Silicon Germanium Bipolar RF Transistor Revision History: , Revision 1.1 Page Subjects (major changes since last revision) This data sheet replaces the revision from Pages 14,1,16: Fig. -2, -4, -, -6 corrected. Table -4: outlier value for OIP3 corrected. Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE ; PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update Data Sheet 3 Revision 1.1,

4 Table of Contents Table of Contents Table of Contents List of Figures List of Tables Product Brief Features Maximum Ratings Thermal Characteristics DC Characteristics General AC Characteristics Frequency Dependent AC Characteristics Characteristic DC Diagrams Characteristic AC Diagrams Simulation Data Package Information SOT Data Sheet 4 Revision 1.1,

5 List of Figures List of Figures Figure 4-1 Total Power Dissipation P tot = f (T s ) Figure -1 BFP76 Testing Circuit Figure -2 Collector Current vs. Collector Emitter Voltage I C = f (V CE ), I B = Parameter in µa Figure -3 DC Current Gain h FE = f (I C ), V CE = 3 V Figure -4 Collector Current vs. Base Emitter Voltage I C = f (V BE ), V CE = 2 V Figure - Base Current vs. Base Emitter Forward Voltage I B = f (V BE ), V CE = 2 V Figure -6 Base Current vs. Base Emitter Reverse Voltage I B = f (V EB ), V CE = 2 V Figure -7 Transition Frequency f T = f (I C ), f = 1 GHz, V CE = Parameter in V Figure -8 3rd Order Intercept Point OIP 3 = f (I C ), Z S = Z L = Ω, V CE, f = Parameters Figure -9 3rd Order Intercept Point at output OIP 3 [dbm] = f (I C, V CE ), Z S = Z L = Ω, f =. GHz Figure -1 Compression Point at output OP 1dB [dbm] = f (I C, V CE ), Z S = Z L = Ω, f =. GHz Figure -11 Collector Base Capacitance C CB = f (V CB ), f = 1 MHz Figure -12 Gain G ma, G ms, IS 21 I² = f (f), V CE = 3 V, I C = 3 ma Figure -13 Maximum Power Gain G max = f (I C ), V CE = 3 V, f = Parameter in GHz Figure -14 Maximum Power Gain G max = f (V CE ), I C = 3 ma, f = Parameter in GHz Figure -1 Input Reflection Coefficient S 11 = f (f), V CE = 3 V, I C = 1 / 3 ma Figure -16 Source Impedance for Minimum Noise Figure Z opt = f (f), V CE = 3 V, I C = 1 / 3 ma Figure -17 Output Reflection Coefficient S 22 = f (f), V CE = 3 V, I C = 1 / 3 ma Figure -18 Noise Figure NF min = f (f), V CE = 3 V, I C = 1 / 3 ma, Z S = Z opt Figure -19 Noise Figure NF min = f (I C ), V CE = 3 V, Z S = Z opt, f = Parameter in GHz Figure -2 Noise Figure NF = f (I C ), V CE = 3 V, Z S = Ω, f = Parameter in GHz Figure 7-1 Package Outline Figure 7-2 Package Footprint Figure 7-3 Marking Example (Marking BFP76: R6s) Figure 7-4 Tape Dimensions Data Sheet Revision 1.1,

6 List of Tables List of Tables Table 3-1 Maximum Ratings at T A = 2 C (unless otherwise specified) Table 4-1 Thermal Resistance Table -1 DC Characteristics at T A = 2 C Table -2 General AC Characteristics at T A = 2 C Table -3 AC Characteristics, V CE = 3 V, f =.9 GHz Table -4 AC Characteristics, V CE = 3 V, f = 1.8 GHz Table - AC Characteristics, V CE = 3 V, f = 2.4 GHz Table -6 AC Characteristics, V CE = 3 V, f = 3. GHz Table -7 AC Characteristics, V CE = 3 V, f =. GHz Data Sheet 6 Revision 1.1,

7 Product Brief 1 Product Brief The BFP76 is a linear and very low noise wideband NPN bipolar RF transistor. The device is based on Infineon s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to V CEO = 4. V and currents up to I C = 7 ma. With its high linearity at currents as low as 1 ma (see Fig. -8) the device supports energy efficient designs. The typical transition frequency is approximately 4 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads. Data Sheet 7 Revision 1.1,

8 Features 2 Features Very low noise amplifier based on Infineon s reliable, high volume SiGe:C technology High linearity OIP 3 = 27 GHz, 3 V, 3 ma High transition frequency f T = 4 1 GHz, 3 V, 3mA NF min =.9 GHz, 3 V, 1 ma Maximum power gain Gms = GHz, 3 V, 3 ma Low power consumption, ideal for mobile applications Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads Qualification report according to AEC-Q11 available Applications As Low Noise Amplifier (LNA) in Mobile and fixed connectivity applications: WLAN 82.11a/b/g/n/ac, WiMAX 2./3. GHz, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, buffer amplifier in VCOs Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package Pin Configuration Marking BFP76 SOT343 1 = B 2 = E 3 = C 4 = E R6s Data Sheet 8 Revision 1.1,

9 Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at T A = 2 C (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Min. Max. Collector emitter voltage V CEO Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit V Open base T A = 2 C T A = - C Collector emitter voltage V CES 13 V E-B short circuited Collector base voltage V CBO 13 V Open emitter Emitter base voltage V EBO 1.2 V Open collector Collector current I C 7 ma Base current I B 4 ma Total power dissipation 1) P tot 24 mw T S 9 C Junction temperature T J 1 C Storage temperature T Stg - 1 C 1) T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the pcb. Data Sheet 9 Revision 1.1,

10 Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point 1) R thjs 23 K/W 1)For the definition of R thjs please refer to Application Note AN77 (Thermal Resistance Calculation) P tot [mw] T S [ C] Figure 4-1 Total Power Dissipation P tot = f (T s ) Data Sheet 1 Revision 1.1,

11 .1 DC Characteristics Table -1 DC Characteristics at T A = 2 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO V I C =1mA, I B = Open base Collector emitter leakage current I CES ) 4 1) 1) Maximum values not limited by the device but by the short cycle time of the 1% test na V CE =13 V, V BE = V CE = V, V BE = E-B short circuited Collector base leakage current I CBO 1 4 1) na V CB =V, I E = Open emitter Emitter base leakage current I EBO 1 4 1) na V EB =.V, I C = Open collector DC current gain h FE V CE =3V, I C = 3 ma Pulse measured.2 General AC Characteristics Table -2 General AC Characteristics at T A =2 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency f T 4 GHz V CE =3V, I C =3mA f =1GHz Collector base capacitance C CB.13.2 pf V CB =3V, V BE = f =1MHz Emitter grounded Collector emitter capacitance C CE.42 pf V CE =3V, V BE = f =1MHz Base grounded Emitter base capacitance C EB.6 pf V EB =.V, V CB = f =1MHz Collector grounded Data Sheet 11 Revision 1.1,

12 .3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T s in a Ω system, T A = 2 C Top View VC Bias -T OUT E C VB IN Bias-T B (Pin 1) E Figure -1 BFP76 Testing Circuit Data Sheet 12 Revision 1.1,

13 Table -3 AC Characteristics, V CE = 3 V, f =.9 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain db Maximum power gain G ms 29 I C =3mA Transducer gain S I C =3mA Minimum Noise Figure db Minimum noise figure NF min. I C =1mA Associated gain G ass 2. I C =1mA Linearity dbm Z S = Z L = Ω 1 db compression point at output OP 1dB 14 I C =3mA 3rd order intercept point at output OIP 3 27 I C =3mA Table -4 AC Characteristics, V CE = 3 V, f = 1.8 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain db Maximum power gain G ms 2 I C =3mA Transducer gain S I C =3mA Minimum Noise Figure db Minimum noise figure NF min. I C =1mA Associated gain G ass 2. I C =1mA Linearity dbm Z S = Z L = Ω 1 db compression point at output OP 1dB 14. I C =3mA 3rd order intercept point at output OIP 3 28 I C =3mA Table - AC Characteristics, V CE = 3 V, f = 2.4 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain db Maximum power gain G ms 23. I C =3mA Transducer gain S I C =3mA Minimum Noise Figure db Minimum noise figure NF min.6 I C =1mA Associated gain G ass 19 I C =1mA Linearity dbm Z S = Z L = Ω 1 db compression point at output OP 1dB 14 I C =3mA 3rd order intercept point at output OIP 3 28 I C =3mA Data Sheet 13 Revision 1.1,

14 Table -6 AC Characteristics, V CE = 3 V, f = 3. GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain db Maximum power gain G ms 21. I C =3mA Transducer gain S I C =3mA Minimum Noise Figure db Minimum noise figure NF min.7 I C =1mA Associated gain G ass 16 I C =1mA Linearity dbm Z S = Z L = Ω 1 db compression point at output OP 1dB 14. I C =3mA 3rd order intercept point at output OIP I C =3mA Table -7 AC Characteristics, V CE = 3 V, f =. GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain db Maximum power gain G ms 16. I C =3mA Transducer gain S I C =3mA Minimum Noise Figure db Minimum noise figure NF min.9 I C =1mA Associated gain G ass 12. I C =1mA Linearity dbm Z S = Z L = Ω 1 db compression point at output OP 1dB 13 I C =3mA 3rd order intercept point at output OIP 3 27 I C =3mA Note: OIP 3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is Ω from.2 MHz to 12 GHz Data Sheet 14 Revision 1.1,

15 .4 Characteristic DC Diagrams I C [ma] μA 2μA 18μA 16μA 14μA 12μA 1μA 8μA 6μA 4μA 2μA V CE [V] Figure -2 Collector Current vs. Collector Emitter Voltage I C = f (V CE ), I B = Parameter in µa 1 3 h FE I C [ma] Figure -3 DC Current Gain h FE = f (I C ), V CE = 3 V Data Sheet 1 Revision 1.1,

16 I C [ma] V BE [V] Figure -4 Collector Current vs. Base Emitter Voltage I C = f (V BE ), V CE = 2 V I B [ma] V [V] BE Figure - Base Current vs. Base Emitter Forward Voltage I B = f (V BE ), V CE = 2 V Data Sheet 16 Revision 1.1,

17 1 11 I B [A] V EB [V] Figure -6 Base Current vs. Base Emitter Reverse Voltage I B = f (V EB ), V CE = 2 V Data Sheet 17 Revision 1.1,

18 . Characteristic AC Diagrams f T [GHz] V 3.V 3.V 2.V 2.V 1.V 1.V I [ma] C Figure -7 Transition Frequency f T = f (I C ), f = 1 GHz, V CE = Parameter in V 3 2 OIP 3 [dbm] V, 24MHz 3V, 24MHz 2V, MHz 3V, MHz I C [ma] Figure -8 3rd Order Intercept Point OIP 3 = f (I C ), Z S = Z L = Ω, V CE, f = Parameters Data Sheet 18 Revision 1.1,

19 BFP I C [ma] V CE [V] 26 Figure -9 3rd Order Intercept Point at output OIP 3 [dbm] = f (I C, V CE ), Z S = Z L = Ω, f =. GHz I C [ma] V [V] CE Figure -1 Compression Point at output OP 1dB [dbm] = f (I C, V CE ), Z S = Z L = Ω, f =. GHz Data Sheet 19 Revision 1.1,

20 C CB [pf] V [V] CB Figure -11 Collector Base Capacitance C CB = f (V CB ), f = 1 MHz G [db] G ms S 21 2 G ma f [G] Figure -12 Gain G ma, G ms, IS 21 I² = f (f), V CE = 3 V, I C = 3 ma Data Sheet 2 Revision 1.1,

21 G max [db] GHz.4GHz.9GHz 1.GHz 1.9GHz 2.4GHz 3.GHz.GHz 1.GHz I [ma] C Figure -13 Maximum Power Gain G max = f (I C ), V CE = 3 V, f = Parameter in GHz G max GHz.4GHz.9GHz 1.GHz 1.9GHz 2.4GHz 3.GHz.GHz 1.GHz V [V] CE Figure -14 Maximum Power Gain G max = f (V CE ), I C = 3 ma, f = Parameter in GHz Data Sheet 21 Revision 1.1,

22 to 1 GHz mA 1mA Figure -1 Input Reflection Coefficient S 11 = f (f), V CE = 3 V, I C = 1 / 3 ma mA 1mA Figure -16 Source Impedance for Minimum Noise Figure Z opt = f (f), V CE = 3 V, I C = 1 / 3 ma Data Sheet 22 Revision 1.1,

23 to 1 GHz mA 1mA Figure -17 Output Reflection Coefficient S 22 = f (f), V CE = 3 V, I C = 1 / 3 ma NF min [db] I C = 3mA I C = 1mA f [GHz] Figure -18 Noise Figure NF min = f (f), V CE = 3 V, I C = 1 / 3 ma, Z S = Z opt Data Sheet 23 Revision 1.1,

24 NF min [db] f = 8GHz 2.6 f =.GHz 2.4 f = 3.GHz 2.2 f = 2.4GHz 2 f = 1.8GHz 1.8 f =.9GHz I C [ma] Figure -19 Noise Figure NF min = f (I C ), V CE = 3 V, Z S = Z opt, f = Parameter in GHz 6. NF [db] f = 8GHz f =.GHz f = 3.GHz f = 2.4GHz f = 1.8GHz f =.9GHz I [ma] C Figure -2 Noise Figure NF = f (I C ), V CE = 3 V, Z S = Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T A =2 C Data Sheet 24 Revision 1.1,

25 Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFP76 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 1 GHz using typical devices. The BFP76 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 2 Revision 1.1,

26 Package Information SOT343 7 Package Information SOT ± MAX..1.9 ±.1 A x.1 M ±.1.1 MIN..2 M A ±.1 SOT343-PO V8 Figure 7-1 Package Outline SOT343-FP V8 Figure 7-2 Package Footprint Type code Date code (YM) 2, June 6 XYs Manufacturer Pin 1 Figure 7-3 Marking Example (Marking BFP76: R6s) Pin SOT323-TP V2 Figure 7-4 Tape Dimensions Data Sheet 26 Revision 1.1,

27 Published by Infineon Technologies AG

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