Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

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1 TVS (Transient Voltage Suppressor) Bi-directional,. V,.8 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air), ± kv (contact discharge) - IEC6-4-4 (EFT): ±2 kv / ±4 A (/ ns) - IEC6-4- (Surge): ±. A (8/2 μs) Bi-directional working voltage up to: V RWM = ±. V Line capacitance: C L =.8 pf (typical) at f = MHz Clamping voltage: V CL = 7. V (typical) at I TLP = 6 A with R DYN =. Ω (typical) Very low reverse current: I R < na (typical) Small form factor SMD Size 2 and low profile.8 mm x.28 mm x. mm Bidirectional and symmetric I/V characteristics for optimized design and assembly Pb-free (RoHS compliant) and halogen free package Guidelines for optimized PCB design and assembly process are available in [2] Potential applications IC/ASICs in audio, headset Human digital interfaces, buttons, GPIO Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/2/22 Device information a ) Pin configuration b ) Schematic diagram Figure Table Pin configuration and schematic diagram Part information Type Package Configuration Marking code ESD24-B-W2 WLL-2-3 line, bi-directional CA ) The device does not have any marking on the device top. The marking code is on the pads. Datasheet Please read the Important Notice and Warnings at the end of this document Revision.

2 Table of contents Table of contents Features Potential applications Product validation Device information Table of contents Maximum ratings Electrical characteristics Typical characteristic diagrams Package information WLL-2-3 package References Revision history Trademarks Datasheet 2 Revision.

3 Maximum ratings Maximum ratings Note: T A = 2 C, unless otherwise specified ) Table 2 Maximum ratings Parameter Symbol Values Unit Reverse working voltage V RWM ±. V ESD discharge 2) V ESD (contact) ± kv V ESD (air) ±8 Peak pulse power 3) P PK 44 W Peak pulse current 3) I PP ±. A Operating temperature range T OP - to 2 C Storage temperature T stg -6 to C Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the component. Device is electrically symmetrical 2 V ESD according to IEC6-4-2 (R = 33 Ω, C = pf discharge network) 3 Stress pulse: 8/2μs current waveform according to IEC6-4- Datasheet 3 Revision.

4 Electrical characteristics 2 Electrical characteristics IF I PP VF... Forward voltage IF... Forward current VR... Reverse voltage IR... Reverse current I TLP R DYN ΔV ΔI ΔI ΔV VR V CL V TLP V t ΔV V h ΔI V RWM R DYN I R ΔV ΔI I T I R I T I PP I TLP V RWM V h V t V CL V TLP VF RDYN... Dynamic resistance VRWM... Reverse working voltage max. Vt... Trigger voltage Vh... Holding voltage VCL... Clamping voltage VTLP... TLP voltage IR... Reverse leakage current Ipp... Peak pulse current ITLP... TLP current IT... Test current Figure 2 Definitions of electrical characteristics IR Diode_Characteristic_Curve_with_snapback_Bi-directional.svg Datasheet 4 Revision.

5 Electrical characteristics Table 3 DC characteristics (T A = 2 C, unless otherwise specified) ) Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Trigger voltage 2)3) V t 6 V Holding voltage 4) V h V I R = ma Reverse current I R < 3 na V R =. V Table 4 AC characteristics (T A = 2 C, unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Line capacitance C L.8 pf V R = V, f = MHz.8 V R = V, f = GHz Table ESD and Surge characteristics (T A = 2 C, unless otherwise specified) ) Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Clamping voltage ) V CL 7. V I TLP = 6 A, t p = ns 9 I TLP = 3 A, t p = ns Clamping voltage 6) 6 I PP = A, t p = 8/2 µs 7. I PP = A, t p = 8/2 µs Dynamic resistance ) R DYN. Ω t p = ns Device is electrically symmetrical 2 Verified by design 3 Voltage forced 4 Current forced Please refer to Application Note AN2[]. TLP parameters: Z = Ω, t p = ns, t r =.6 ns. 6 Stress pulse: 8/2μs current waveform according to IEC6-4- Datasheet Revision.

6 Typical characteristic diagrams 3 Typical characteristic diagrams Note: T A = 2 C, unless otherwise specified I R [A] V R [V] Figure 3 Reverse leakage current: I R = f(v R ) C L [pf] V R [V] Figure 4 Line capacitance: C L = f(v R ), f = MHz Datasheet 6 Revision.

7 Typical characteristic diagrams 2 Scope: 6 GHz, 2 GS/s 2 V CL [V] V CL-max-peak = 2 V V CL-3ns-peak = 4 V t p [ns] Figure Clamping voltage (ESD): V CL = f(t), 8 kv positive pulse according to IEC6-4-2 Scope: 6 GHz, 2 GS/s - V CL [V] V CL-max-peak = -9 V V CL-3ns-peak = -4 V t p [ns] Figure 6 Clamping voltage (ESD): V CL = f(t), 8 kv negative pulse according to IEC6-4-2 Datasheet 7 Revision.

8 Typical characteristic diagrams 4 3 Scope: 6 GHz, 2 GS/s V CL [V] V CL-max-peak = 33 V V CL-3ns-peak = V t p [ns] Figure 7 Clamping voltage (ESD): V CL = f(t), kv positive pulse according to IEC6-4-2 Scope: 6 GHz, 2 GS/s V CL [V] V CL-max-peak = -3 V V CL-3ns-peak = -6 V t p [ns] Figure 8 Clamping voltage (ESD): V CL = f(t), kv negative pulse according to IEC6-4-2 Datasheet 8 Revision.

9 Typical characteristic diagrams 3 2 ESD24-B-W2 R DYN 2. 2 R DYN =. Ω 7. I TLP [A] Equivalent V IEC [kv] R DYN =. Ω V TLP [V] Figure 9 Clamping voltage (TLP): I TLP = f(v TLP ) [] Datasheet 9 Revision.

10 Typical characteristic diagrams I PP [A] V CL [V] Figure Clamping voltage (Surge): I PP = f(v CL ) [] Datasheet Revision.

11 Typical characteristic diagrams Insertion Loss ( S 2 ) [db] 2 ESD24-B-W2 3.. Frequency [GHz] Figure Insertion loss vs. frequency in a Ω system Datasheet Revision.

12 Package information 4 Package information 4. WLL-2-3 package BOTTOM VIEW.28±.3.±..24±.2.8±.3.36 (.9) 2.7±.2 ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 28 & PROJECTION METHOD [ ] Figure 2 WLL-2-3 package outline (dimension in mm) STENCIL THICKNESS <8UM STENCIL THICKNESS 8UM copper solder mask stencil apertures ALL DIMENSIONS ARE IN UNITS MM Figure 3 WLL-2-3 footprint (dimension in mm), recommendation for Printed Circuit Board Assembly see [2] ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 28 & PROJECTION METHOD [ ] Figure 4 WLL-2-3 packing (dimension in mm) Marking on pad-side 2 Type code Type code 2 Figure WLL-2-3 marking example (see Table ) Datasheet 2 Revision.

13 References References [] Infineon AG - Application Note AN2: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendation for Printed Circuit Board Assembly of Infineon WLL Packages [3] Infineon AG - Application Note AN392: TVS Diodes in ChipScalePackage reduce size and save cost Revision history Revision history: Rev..9., Page or Item Subjects (major changes since previous revision) Revision., All Final datasheet Datasheet 3 Revision.

14 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 8726 Munich, Germany 27 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? erratum@infineon.com Document reference IFX-izp IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury

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