Robust low noise broadband pre-matched RF bipolar transistor

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5 kv HBM ESD hardness High transition frequency enables best in class noise performance at high frequencies: NF min =. db at 5.5 GHz,.8 V, 8 ma High gain G ma = 7 db at 5.5 GHz,.8 V, 5 ma OIP 3 = 9.

1 Product description The is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness: dbm maximum RF input power,.5 kv HBM ESD hardness High transition frequency enables best in class noise performance at high frequencies: NF min =. db at 5.5 GHz,.8 V, 8 ma High gain G ma = 7 db at 5.5 GHz,.8 V, 5 ma OIP 3 = 9.5 dbm at 5.5 GHz,.8 V, 5 ma Suitable for low voltage applications e.g. V CC =. V and.8 V (.85 V, 3.3 V, 3.6 V require a corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC7//. Potential applications WLAN, WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Device information Table Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel / H637XTSA SOT33 = B = E 3 = C = E Ts 3 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v.

2 Table of contents Table of contents Product description Feature list Product validation Potential applications Device information Table of contents Absolute maximum ratings Thermal characteristics DC characteristics General AC characteristics Frequency dependent AC characteristics Characteristic DC diagrams Characteristic AC diagrams Package information SOT Revision history Disclaimer Datasheet v.

3 Absolute maximum ratings Absolute maximum ratings Table Absolute maximum ratings at T A = 5 C (unless otherwise specified) Min. Max. Collector emitter voltage V CEO.5 V Open base. T A = -55 C, open base Collector emitter voltage ) V CES.5 E-B short circuited. T A = -55 C, E-B short circuited Collector base voltage ) V CBO.9 Open emitter Base current I B -5 5 ma Collector current I C 55 RF input power P RFin dbm.6 T A = -55 C, open emitter ESD stress pulse V ESD kv HBM, all pins, acc. to JESD-A Total power dissipation 3) P tot 5 mw T S 99 C Junction temperature T J 5 C Storage temperature T Stg -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. V CES is similar to V CEO due to design. V CBO is similar to V CEO due to design. 3 T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v.

4 Thermal characteristics Thermal characteristics Table 3 Thermal resistance Junction - soldering point R thjs 5 K/W P tot [mw] T S [ C] Figure Total power dissipation P tot = f(t S ) Datasheet v.

5 3 3. DC characteristics Table DC characteristics at T A = 5 C Collector emitter breakdown voltage V (BR)CEO.5.6 V I C = ma, I B =, open base Collector emitter leakage current I CES ) na V CE =.5 V, V BE =, E-B short circuited Collector base leakage current I CBO ) V CB =.5 V, I E =, open emitter Emitter base leakage current I EBO ) μa V EB =.5 V, I C =, open collector DC current gain h FE V CE =.8 V, I C = 5 ma, pulse measured 3. General AC characteristics Table 5 General AC characteristics at T A = 5 C Collector base capacitance ) C CB pf f = MHz, f = GHz, V CB =.8 V, V BE =, emitter grounded Collector emitter capacitance C CE.5 f = MHz, V CE =.8 V, V BE =, base grounded Emitter base capacitance C EB.73 f = MHz, V EB =. V, V CB =, collector grounded Maximum values not limited by the device but by the short cycle time of the % test Including integrated feedback capacitance Datasheet 5 v.

6 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T s in a 5 Ω system, T A = 5 C. Top View VC Bias-T OUT E C VB IN Bias-T B (Pin ) E Figure Testing circuit Table 6 AC characteristics, V CE =.8 V, f = 5 MHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output G ma S.5.5 NF min.9 G ass OIP 3 OP db 7 db dbm I C = 5 ma I C = 8 ma I C = 5 ma, Z S = Z L = 5 Ω Datasheet 6 v.

7 Table 7 AC characteristics, V CE =.8 V, f = 9 MHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output Table 8 G ma S NF min.9 G ass OIP OP db 8 AC characteristics, V CE =.8 V, f =.5 GHz db dbm I C = 5 ma I C = 8 ma I C = 5 ma, Z S = Z L = 5 Ω Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output Table 9 G ma S NF min.95 G ass OIP 3.5 OP db 6 AC characteristics, V CE =.8 V, f =.9 GHz db dbm I C = 5 ma I C = 8 ma I C = 5 ma, Z S = Z L = 5 Ω Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output G ma S.5 NF min.95 G ass OIP 3 OP db 8.5 db dbm I C = 5 ma I C = 8 ma I C = 5 ma, Z S = Z L = 5 Ω Datasheet 7 v.

8 Table AC characteristics, V CE =.8 V, f =. GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output Table G ma S.5 NF min. G ass 9.5 OIP 3 OP db 6.5 AC characteristics, V CE =.8 V, f = 3.5 GHz db dbm I C = 5 ma I C = 8 ma I C = 5 ma, Z S = Z L = 5 Ω Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output Table G ma S NF min. G ass 7.5 OIP 3.5 OP db 7 AC characteristics, V CE =.8 V, f = 5.5 GHz db dbm I C = 5 ma I C = 8 ma I C = 5 ma, Z S = Z L = 5 Ω Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output G ma S NF min. G ass 5 OIP OP db db dbm I C = 5 ma I C = 8 ma I C = 5 ma, Z S = Z L = 5 Ω Datasheet 8 v.

9 Table 3 AC characteristics, V CE =.8 V, f = GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity 3rd order intercept point at output db gain compression point at output G ma S NF min.85 G ass 9 OIP 3 6 OP db db dbm I C = 5 ma I C = 8 ma I C = 5 ma, Z S = Z L = 5 Ω Note: G ms = IS / S I for k < ; G ma = IS / S I(k-(k -) / ) for k >. In order to get the NF min values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP 3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 5 Ω from. MHz to GHz. Datasheet 9 v.

10 3. Characteristic DC diagrams I C [ma] µA 7µA 6µA 5µA µa 3µA µa µa V CE [V] Figure 3 Collector current vs. collector emitter voltage I C = f(v CE ), I B = parameter 3 h FE I c [ma] Figure DC current gain h FE = f(i C ), V CE =.8 V Datasheet v.

11 I C [ma] V BE [V] Figure 5 Collector current vs. base emitter forward voltage I C = f(v BE ), V CE =.8 V I B [ma] V BE [V] Figure 6 Base current vs. base emitter forward voltage I B = f(v BE ), V CE =.8 V Datasheet v.

12 6 7 8 I B [A] V EB [V] Figure 7 Base current vs. base emitter reverse voltage I B = f(v EB ), V CE =.8 V Datasheet v.

13 3.5 Characteristic AC diagrams 8 6 OIP 3 [dbm] 8 6.5V, MHz.8V, MHz.5V, 55MHz.8V, 55MHz I C [ma] Figure 8 3rd order intercept point at output OIP 3 = f(i C ), Z S = Z L = 5 Ω, V CE, f = parameters I C [ma] V CE [V] Figure 9 3rd order intercept point at output OIP 3 [dbm] = f(i C, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz Datasheet 3 v.

14 I C [ma] V CE [V] 6 Figure Compression point at output OP db [dbm] = f(i C, V CE ), Z S = Z L = 5 Ω, f = 5.5 GHz G [db] S G ma f [GHz] Figure Gain G ma, IS I = f(f), V CE =.8 V, I C = 5 ma Datasheet v.

15 G max [db] GHz.9GHz.5GHz.9GHz.GHz 3.5GHz 5.5GHz.GHz I C [ma] Figure Maximum power gain G max = f(i C ), V CE =.8 V, f = parameter in GHz 8 G max [db] GHz.9GHz.5GHz.9GHz.GHz 3.5GHz 5.5GHz.GHz V CE [V] Figure 3 Maximum power gain G max = f(v CE ), I C = 5 ma, f = parameter in GHz Datasheet 5 v.

16 to GHz mA 5mA Figure Input reflection coefficient S = f(f), V CE =.8 V, I C = 8 / 5 ma to GHz mA 5mA Figure 5 Source impedance for minimum noise figure Z S,opt = f(f), V CE =.8 V, I C = 8 / 5 ma Datasheet 6 v.

17 to GHz mA 5mA Figure 6 Output reflection coefficient S = f(f), V CE =.8 V, I C = 8 / 5 ma NF min [db] I C = 5mA I C = 8mA f [GHz] Figure 7 Noise figure NF min = f(f), V CE =.8 V, Z S = Z S,opt, I C = 8 / 5 ma Datasheet 7 v.

18 NF min [db] f = GHz f = 5.5GHz f = 3.5GHz f =.GHz f =.9GHz I C [ma] Figure 8 Noise figure NF min = f(i C ), V CE =.8 V, Z S = Z S,opt, f = parameter in GHz NF 5 [db] f = GHz f = 5.5GHz f = 3.5GHz f =.GHz f =.9GHz I C [ma] Figure 9 Note: Noise figure NF 5 = f(i C ), V CE =.8 V, Z S = 5 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T A = 5 C. Datasheet 8 v.

19 Package information SOT A.5±..9±.. MAX.. MIN... A.± ± x 8 Package information SOT33. MOLD FLASH, PROTRUSION OR GATE BURRS OF. MM MAXIMUM PER SIDE ARE NOT INCLUDED ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 8 & PROJECTION METHOD [ ] Figure Package outline Figure Foot print TYPE CODE MONTH NOTE OF MANUFACTURER YEAR Figure Marking layout example..3 PIN INDEX MARKING.5. ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 8 & PROJECTION METHOD [ ] Figure 3 Tape dimensions Datasheet 9 v.

20 Revision history Revision history Document version Date of release Description of changes New datasheet layout. Datasheet v.

21 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 876 Munich, Germany 8 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? erratum@infineon.com Document reference IFX-yak IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury

The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.

The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Product description The is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance