Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
|
|
- Natalie Johnson
- 5 years ago
- Views:
Transcription
1 Product description The BFP8ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for. -. GHz LNA applications. Feature list Unique combination of high end RF performance and robustness: dbm maximum RF input power, kv HBM ESD hardness High transition frequency f T = 7 GHz to enable best in class noise performance at high frequencies: NF min =. db at. GHz,. V, ma High gain G ma = 7. db at. GHz,. V, ma OIP =. dbm at. GHz,. V, ma Suitable for low voltage applications e.g. V CC =. V and.8 V (.8 V,. V,. V require corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC7//. Potential applications Wireless communications: WLAN, WiMAX and Bluetooth Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB (st and nd stage LNA) Multimedia applications such as mobile/portable TV, mobile TV and FM radio G/G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee Device information Table Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP8ESD / BFP8ESDH7XTSA SOT = B = E = C = E T9s Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v.
2 Table of contents Table of contents Product description Feature list Product validation Potential applications Device information Table of contents Absolute maximum ratings Thermal characteristics DC characteristics General AC characteristics Frequency dependent AC characteristics Characteristic DC diagrams Characteristic AC diagrams Package information SOT Revision history Disclaimer Datasheet v.
3 Absolute maximum ratings Absolute maximum ratings Table Absolute maximum ratings at T A = C (unless otherwise specified) Min. Max. Collector emitter voltage V CEO. V Open base.9 T A = - C, open base Collector emitter voltage ) V CES. E-B short circuited.9 T A = - C, E-B short circuited Collector base voltage ) V CBO. Open emitter Base current I B - ma Collector current I C RF input power P RFin dbm. T A = - C, open emitter ESD stress pulse V ESD - kv HBM, all pins, acc. to JESD-A Total power dissipation ) P tot mw T S C Junction temperature T J C Storage temperature T Stg - Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. V CES is similar to V CEO due to design. V CBO is similar to V CEO due to design. T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the PCB. Datasheet v.
4 Thermal characteristics Thermal characteristics Table Thermal resistance Min. Typ. Max. Junction - soldering point R thjs K/W P tot [mw] 8 7 T S [ C] Figure Total power dissipation P tot = f(t S ) Datasheet v.
5 . DC characteristics Table DC characteristics at T A = C Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO..7 V I C = ma, I B =, open base Collector emitter leakage current I CES ) na V CE = V, V BE =, E-B short circuited Collector base leakage current I CBO ) V CB = V, I E =, open emitter Emitter base leakage current I EBO ) μa V EB =. V, I C =, open collector DC current gain h FE V CE =. V, I C = ma, pulse measured. General AC characteristics Table General AC characteristics at T A = C Min. Typ. Max. Transition frequency f T 7 GHz V CE =. V, I C = ma, f = GHz Collector base capacitance C CB ff V CB = V, V BE =, f = MHz, emitter grounded Collector emitter capacitance C CE. pf V CE = V, V BE =, f = MHz, base grounded Emitter base capacitance C EB. V EB =. V, V CB =, f = MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the % test. Datasheet v.
6 . Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T s in a Ω system, T A = C. Top View VC E C Bias-T OUT VB IN Bias-T B (Pin ) E Figure Testing circuit Table AC characteristics, V CE =. V, f = MHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output Table 7 G ms S Min. Typ. Max. 9. NF min. G ass OIP OP db. AC characteristics, V CE =. V, f = 9 MHz db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output G ms S Min. Typ. Max. 9 NF min. G ass OIP. OP db 7 db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Datasheet v.
7 Table 8 AC characteristics, V CE =. V, f =. GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output Table 9 G ms S Min. Typ. Max.. NF min. G ass OIP. OP db 7. AC characteristics, V CE =. V, f =.9 GHz db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output Table G ms S Min. Typ. Max.. NF min. G ass 9. OIP. OP db 8 AC characteristics, V CE =. V, f =. GHz db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output G ms S Min. Typ. Max. 9 NF min. G ass 8 OIP OP db 8 db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Datasheet 7 v.
8 Table AC characteristics, V CE =. V, f =. GHz Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output Table G ma S Min. Typ. Max. 7. NF min. G ass OIP. OP db 8. AC characteristics, V CE =. V, f =. GHz db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Power gain Maximum power gain Transducer gain Noise figure Minimum noise figure Associated gain Linearity rd order intercept point at output db gain compression point at output G ma S Min. Typ. Max... NF min.8 G ass. OIP OP db 8 db dbm I C = ma I C = ma Z S = Z L = Ω, I C = ma Note: G ms = IS / S I for k < ; G ma = IS / S I(k-(k -) / ) for k >. In order to get the NF min values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP value depends on termination of all intermodulation frequency components. Termination used for this measurement is Ω from. MHz to GHz. Datasheet 8 v.
9 . Characteristic DC diagrams I C [ma] 8 8 7µA µa µa µa µa µa µa µa.... V [V] CE Figure Collector current vs. collector emitter voltage I C = f(v CE ), I B = parameter h FE I C [ma] Figure DC current gain h FE = f(i C ), V CE =. V Datasheet 9 v.
10 I C [ma] V [V] BE Figure Collector current vs. base emitter forward voltage I C = f(v BE ), V CE =. V I B [ma] V [V] BE Figure Base current vs. base emitter forward voltage I B = f(v BE ), V CE =. V Datasheet v.
11 I B [A] V [V] EB Figure 7 Base current vs. base emitter reverse voltage I B = f(v EB ), V CE =. V Datasheet v.
12 . Characteristic AC diagrams f T [GHz].V.V.V.V.V.V I C [ma] Figure 8 Transition frequency f T = f(i C ), f = GHz, V CE = parameter C CB [pf] V [V] CB Figure 9 Collector base capacitance C CB = f(v CB ), f = MHz Datasheet v.
13 7 Gms G [db] 8 9 Gma S f [GHz] Figure Gain G ma, G ms, IS I = f(f), V CE =. V, I C = ma G max [db] GHz.9GHz.GHz.9GHz.GHz.GHz.GHz I [ma] C Figure Maximum power gain G max = f(i C ), V CE =. V, f = parameter Datasheet v.
14 G max [db] GHz.9GHz.GHz.9GHz.GHz.GHz.GHz.... V [V] CE Figure Maximum power gain G max = f(v CE ), I C = ma, f = parameter OIP [dbm] V, MHz V, MHz.V, MHz.V, MHz I C [ma] Figure rd order intercept point at output OIP = f(i C ), Z S = Z L = Ω, V CE, f = parameter Datasheet v.
15 8 7 7 I C [ma] V CE [V] 8 9 Figure Compression point at output OP db [dbm] = f(i C, V CE ), Z S = Z L = Ω, f =. GHz I C [ma] V CE [V] Figure rd order intercept point at output OIP [dbm] = f(i C, V CE ), Z S = Z L = Ω, f =. GHz Datasheet v.
16 to GHz ma ma Figure Input reflection coefficient S = f(f), V CE =. V, I C = / ma to GHz ma ma Figure 7 Output reflection coefficient S = f(f), V CE =. V, I C = / ma Datasheet v.
17 ma ma ma Figure 8 Source impedance for minimum noise figure Z S,opt = f(f), V CE =. V, I C = / / ma.. ma ma ma NF min [db] f [GHz] Figure 9 Noise figure NF min = f(f), V CE =. V, Z S = Z S,opt, I C = / / ma Datasheet 7 v.
18 . NF min [db]..8..ghz.ghz.ghz.9ghz I [ma] C Figure Noise figure NF min = f(i C ), V CE =. V, Z S = Z S,opt, f = parameter NF [db] ghz.ghz.ghz.9ghz 8 8 I [ma] C Figure Note: Noise figure NF = f(i C ), V CE =. V, Z S = Ω, f = parameter The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T A = C. Datasheet 8 v.
19 Package information SOT A.±..9±.. MAX.. MIN... A.± ±.... x 8 BFP8ESD Package information SOT. MOLD FLASH, PROTRUSION OR GATE BURRS OF. MM MAXIMUM PER SIDE ARE NOT INCLUDED ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 8 & PROJECTION METHOD [ ] Figure Package outline Figure Foot print TYPE CODE MONTH NOTE OF MANUFACTURER YEAR Figure Marking layout example.. PIN INDEX MARKING.. ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 8 & PROJECTION METHOD [ ] Figure Tape dimensions Datasheet 9 v.
20 Revision history Revision history Document version Date of release Description of changes. New datasheet layout. Datasheet v.
21 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 87 Munich, Germany 8 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? erratum@infineon.com Document reference IFX-rdc798 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
Robust low noise broadband pre-matched RF bipolar transistor
Product description The is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness: dbm maximum RF
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min = 1 db at 5.5 GHz, 3 V, 6 ma High gain G ms = 21 db at 5.5 GHz, 3 V, 15 ma OIP
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The BFP7 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min =.8 db at. GHz, 3 V, 6 ma High gain G ms = 9. db at. GHz, 3 V, ma OIP 3 =.
More informationThe BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.
Product description The is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency f T of
More informationInternally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications
Product description The BGB74L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon s silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure
More informationFor broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications
Features Maximum collector-emitter voltage V CE0 = 15 V Maximum collector current I C = 25 ma Noise figure NF = 3.5 db 3rd order output intercept point OIP 3 = 21.5 dbm 1 db output compression point P
More informationBF776. High Performance NPN Bipolar RF Transistor
High Performance NPN Bipolar RF Transistor High performance low noise amplifier Low minimum noise figure of typ. 0.8 db @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB,
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage
More informationType Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4
Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding Gms = 22.5 db at 1.8 GHz Minimum noise figure NF min = 0.95 db at 1.8 GHz For oscillators up to 15 GHz Transition
More informationType Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, NF min = 1 db at 900 MHz Pbfree (RoHS compliant) package Qualification
More informationBGA855N6 BGA855N6. Low Noise Amplifier for Lower L-Band GNSS Applications GND. Features
Features Operating frequencies: 1164-1300 MHz Insertion power gain: 17.8dB Low noise figure: 0.60 db High linearity performance IIP3: 0 dbm Low current consumption: 4.8 ma Ultra small TSNP-6-10 leadless
More informationType Marking Pin Configuration Package BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343
BFPESD Low Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier High ESD robustness typical value V (HBM) Outstanding G ms =. db @.8 GHz Minimum noise figure NF min =.9 db
More informationType Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast nonsaturated switches at collector currents from 0.5 ma to 20 ma 3 1 2 Pbfree (RoHS compliant) package Qualification report according
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma Power amplifiers for DECT and
More informationType Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143
Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 4 3 0 ma to 80 ma Power amplifier
More informationBFG235. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma 4 3 Power amplifiers for DECT
More informationSmall Footprint Ultra Low Current Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)
BGA123L4 Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Features Operating frequencies: 1550-1615 MHz Ultra low current consumption: 1.1 ma Wide supply
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For IF amplifiers in TVsat tuners and for VCR modulators Pbfree (RoHS compliant) package 1) Qualified according AEC Q101 1 2 ESD (Electrostatic discharge) sensitive device, observe
More informationBFP620. Low Noise SiGe:C Bipolar RF Transistor
Low Noise SiGe:C Bipolar RF Transistor Highly linear low noise RF transistor Provides outstanding performance for a wide range of wireless applications Based on Infineon's reliable high volume Silicon
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
Product description NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term
More informationBGA5L1BN6 BGA5L1BN6. 18dB High Gain Low Noise Amplifier for LTE Lowband VCC GND. Features
BGA5L1BN6 Features Operating frequencies: 600-1000 MHz Insertion power gain: 18.5 db Insertion Loss in bypass mode: 2.7 db Low noise figure: 0.7 db Low current consumption: 8.2 ma Multi-state control:
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
BFP7 NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to GHz and more Ideal for CDMA and WLAN applications
More informationBFP420. NPN Silicon RF Transistor
NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. at. GHz outstanding G ms = at. GHz Transition frequency f T = 5 GHz Gold metallization for high
More informationType Marking Pin Configuration Package BFP540 ATs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding G ms =. at.8 GHz Minimum noise figure NF min =.9 at.8 GHz Pbfree (RoHS compliant) and halogenfree package
More informationType Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor Low noise amplifier designed for low voltage applications, ideal for. V or. V supply voltage Common e.g. in cordless phones, satellite receivers and oscillators
More informationData Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices
Data Sheet, Rev..1, Sept. 11 BGA61 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 11-9- Published by Infineon Technologies AG, 176 München, Germany Infineon Technologies AG
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (Transient Voltage Suppressor) Bi-directional,. V,.8 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air), ± kv (contact discharge)
More informationBGB741L7ESD. ESD-Robust and Easy-To-Use Broadband LNA MMIC. RF & Protection Devices. Data Sheet, Rev. 1.0, April 2009
Data Sheet, Rev. 1.0, April 2009 BGB741L7ESD ESD-Robust and Easy-To-Use Broadband LNA MMIC RF & Protection Devices Edition 2009-04-17 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon
More informationData Sheet, Rev. 2.2, April 2008 BGA622L7. Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection. Small Signal Discretes
Data Sheet, Rev. 2.2, April 2008 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection Small Signal Discretes Edition 2008-04-14 Published by Infineon Technologies AG, 81726
More informationTVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant
TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant Features ESD/transient protection of high speed data lines according to: - IEC61000-4-2 (ESD):
More informationType Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3
Linear Low Noise Silicon Bipolar RF Transistor High linearity low noise driver amplifier Output compression point 9.5 m @.8 GHz Ideal for oscillators up to 3.5 GHz Low noise figure. at.8 GHz Collector
More informationTVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant
TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC),.3 pf, 21, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC61-4-2
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (transient voltage suppressor) Bi-directional, 5.5 V, 3.5 pf, 21, RoHS and halogen free compliant Features ESD/transient protection of susceptible I/O lines to: - IEC61-4-2 (ESD): ±3 kv (air/contact
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (Transient Voltage Suppressor) Bi-directional, 3.3 V, 6. pf, 2, RoHS and Halogen Free compliant Feature list ESD/transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air/contact discharge) -
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (transient voltage suppressor) Bi-directional, 5.5 V,.2 pf, 5, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC6-4-2 (ESD): ±25 kv
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (transient voltage suppressor) Bi-directional, 5.5 V,.3 pf, 21, RoHS and halogen free compliant Features ESD/transient protection of high speed data lines according to: - IEC61-4-2 (ESD): ±18 kv (air/contact
More informationNPN wideband silicon RF transistor
Rev. 1 15 December 21 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
More informationNPN wideband silicon germanium RF transistor
Rev. 1 22 April 211 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low current applications Smallest Package 1.4 x 0.8 x 0.59 mm Noise figure F = 1.25 db at 1.8 GHz outstanding G ms = 23 db at 1.8 GHz Transition frequency f T = 25 GHz Gold
More informationType Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor
More informationBFP405. NPN Silicon RF Transistor
BFP5 NPN Silicon RF Transistor For low current applications For oscillators up to GHz Noise figure F =.5 db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization for
More informationBFP420. NPN Silicon RF Transistor
BFP NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization
More informationData Sheet, Rev. 2.3, Sept BGA428. Gain and PCS Low Noise Amplifier. RF & Protection Devices
Data Sheet, Rev. 2.3, Sept. 2011 BGA428 Gain and PCS Low Noise Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG
More informationNPN wideband silicon RF transistor
Rev. 2 11 January 211 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to GHz and more Ideal for CDMA and WLAN applications
More informationBCR129 BCR129S BCR129W
BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9S: Two internally isolated transistors with good matching in one
More informationBFP842ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,
Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 21--11 RF & Protection Devices Edition 21--11 Published by Infineon Technologies AG 81726 Munich, Germany 21 Infineon Technologies
More informationBCR BCR183 BCR183W BCR183S BCR183U. Type Marking Pin Configuration Package BCR183 BCR183S BCR183U SOT23 SOT363 SC74 SOT323.
BCR8... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω) BCR8S / U: Two internally isolated transistors with good matching
More informationType Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) Pbfree (RoHS compliant) package Qualified according AEC
More informationBCR Type Marking Pin Configuration Package BCR133 BCR133S BCR133W Pb-containing package may be available upon special request C 3
BCR... NPN Silicon Digital Transistor Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R = kω, R = kω) BCRS: Two internally isolated transistors with good matching
More informationBFP840ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.2,
Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany 2013
More informationBFP640ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,
Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013
More informationDual NPN wideband silicon RF transistor
Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The is part
More informationNPN wideband silicon RF transistor. NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.
Rev. 2 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The
More informationNPN 25 GHz wideband transistor
CMPAK-4 Rev. 2 13 September 211 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS
BAT5... Silicon Schottky Diodes Low barrier type for DBS mixer applications up to GHz, phase detectors and modulators Low noise figure Pb-free (RoHS compliant) package BAT5-EL BAT5-ELS BAT5-W BAT5-4W BAT5-5W
More informationType Marking Pin Configuration Package BCR405U L5s 1 = GND 2;3;5 = I out 4 = V S 6 = R ext SC74
LED Driver Supplies stable bias current even at low battery voltage Ideal for stabilizing bias current of LEDs Negative temperature coefficient protects 4 5 6 3 LEDs against thermal overload Suitable for
More informationBFP740. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 215-1-2 RF & Protection Devices Edition 215-1-2 Published by Infineon Technologies AG 81726 Munich, Germany 215 Infineon Technologies
More informationBFP520. NPN Silicon RF Transistor
NPN Silicon RF Transistor For highest gain low noise amplifier at. GHz and ma / V Outstanding Gms =.5 Noise Figure F =.95 For oscillators up to 5 GHz Transition frequency f T = 5 GHz Gold metallisation
More informationBFP760. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 213-8- RF & Protection Devices Edition 213-8- Published by Infineon Technologies AG 81726 Munich, Germany 213 Infineon Technologies
More informationBCR BCR112/F BCR112W. Type Marking Pin Configuration Package BCR112 BCR112F BCR112W. WFs WFs WFs 3=C 3=C 3=C 2=E 2=E 2=E - - -
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) BCRU: Two internally isolated transistors with good matching
More informationBFP843. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor. Revision 1.
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1., 13-6-19 RF & Protection Devices Edition 13-6-19 Published by Infineon Technologies AG 8176 Munich, Germany 13 Infineon
More informationBGB420, Aug BGB420. Active Biased Transistor MMIC. Wireless Silicon Discretes. Never stop thinking.
, Aug. 2001 BGB420 Active Biased Transistor MMIC Wireless Silicon Discretes Never stop thinking. Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon
More informationBAT17... Silicon Schottky Diode For mixer applications in VHF/UHF range For high-speed switching application Pb-free (RoHS compliant) package
Silicon Schottky Diode For mixer applications in VHF/UHF range For highspeed switching application Pbfree (RoHS compliant) package BAT17 BAT17 BAT17W BAT175 BAT175W BAT176W BAT177 " ESD (Electrostatic
More informationPreliminary Data Sheet, Rev.2.2, Oct BGM681L11. GPS Front-End with high Out-of-Band Attenuation. Small Signal Discretes
Preliminary Data Sheet, Rev.2.2, Oct. 2008 BGM681L11 GPS Front-End with high Out-of-Band Attenuation Small Signal Discretes Edition 2008-10-09 Published by Infineon Technologies AG 81726 München, Germany
More informationBAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W
BAS4.../BAS4W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing Pb-free (RoHS compliant) package Qualified according
More informationSilicon NPN Planar RF Transistor
Not for new design, this product will be obsoleted soon BFQ81 Silicon NPN Planar RF Transistor Features Small feedback capacitance Low noise figure Low cross modulation Lead (Pb)-free component e3 2 1
More informationNPN 4 GHz wideband transistor IMPORTANT NOTICE. use
Rev. 03 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data
More informationBFP720ESD. Data Sheet. RF & Protection Devices. Robust High Performance Low Noise Bipolar RF Transistor. Revision 1.0,
Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon
More informationBCR BCR108/F BCR108T/W BCR108S. Type Marking Pin Configuration Package BCR108 BCR108F 2=E 2=E SOT23 TSFP-3 BCR108S BCR108W 3=C 3=C - - 1=B 1=B
BCR8... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =. kω, R =47 kω) BCR8S: Two internally isolated transistors with good matching
More informationBFP640. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2., 21-3-13 RF & Protection Devices Edition 21-3-13 Published by Infineon Technologies AG 81726 Munich, Germany 21 Infineon Technologies
More informationQualified for Automotive Applications. Product Validation according to AEC-Q100/101
Features 5 V, and variable output voltage Output voltage tolerance ±4% 4 ma current capability Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof Reverse polarity proof Suitable
More informationBAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package
Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package BAT68 BAT68- BAT68-W BAT68-6 BAT68-6W BAT68-7W BAT68-8S!!! "!
More informationBFP740F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2., 215-3-12 RF & Protection Devices Edition 215-3-12 Published by Infineon Technologies AG 81726 Munich, Germany 215 Infineon Technologies
More informationNPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
BFR52 Rev. 3 1 September 24 Product data sheet 1. Product profile 1.1 General description The BFR52 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain
More informationBFQ67 / BFQ67R / BFQ67W
Not for new design, this product will be obsoleted soon Silicon NPN Planar RF Transistor BFQ67 / BFQ67R / BFQ67W Features Small feedback capacitance Low noise figure High transition frequency Lead (Pb)-free
More informationESD (Electrostatic discharge) sensitive device, observe handling precautions
Product description The BFQ79 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and cost effective NPN silicon germanium technology. Not internally matched, the BFQ79
More informationData sheet, BGA614, Nov BGA614. Silicon Germanium Broadband MMIC Amplifier MMIC. Secure Mobile Solutions Silicon Discretes. Never stop thinking.
Data sheet, BGA61, Nov. 3 BGA61 Silicon Germanium Broadband MMIC Amplifier MMIC Secure Mobile Solutions Silicon Discretes Never stop thinking. Edition 311 Published by Infineon Technologies AG, St.MartinStrasse
More information65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement
Rev. 01 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product
More informationNPN 9 GHz wideband transistor. The transistor is encapsulated in a plastic SOT23 envelope.
SOT23 Rev. 4 7 September 211 Product data sheet 1. Product profile 1.1 General description The is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications
More informationBFR720L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2-09-03 RF & Protection Devices Edition 2-09-03 Published by Infineon Technologies AG 8726 Munich, Germany 3 Infineon Technologies
More informationBFR740L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,
Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 12-06-21 RF & Protection Devices Edition 12-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 13 Infineon Technologies
More informationPart Ordering code Marking Remarks Package BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3)
Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1
More informationData Sheet, Rev.3.2, Oct BGM781N11. GPS Front-End Module. RF & Protection Devices
Data Sheet, Rev.3.2, Oct. 2010 BGM781N11 GPS Front-End Module RF & Protection Devices Edition 2010-10-28 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All
More informationIRS SOT-23 High-Side Gate Driver IC IRS10752LPBF. Features. Description. Package Options. Applications. Typical Connection Diagram
µhvic TM Features SOT-23 High-Side Gate Driver IC Description Floating gate driver designed for bootstrap operation Fully operational to +100 V Excellent dv/dt immunity Excellent negative V S transient
More informationNPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
SOT23 BFR52 Rev. 4 13 September 211 Product data sheet 1. Product profile 1.1 General description The BFR52 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits
More informationPart Number Order Number Package Quantity Supplying Form. (Pb-Free)
NESGM NPN SiGe RF Transistor for Low Noise, High-in Amplification Flat-Lead -Pin Thin-Type Super Minimold (M) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications.
More informationBFP650. Data Sheet. RF & Protection Devices. High Linearity Silicon Germanium Bipolar RF Transistor. Revision 1.1,
High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon
More information60 V, 1 A PNP medium power transistors
Rev. 8 25 February 28 Product data sheet. Product profile. General description PNP medium power transistor series. Table. Product overview Type number [] Package NPN complement NXP JEITA JEDEC BCP52 SOT223
More informationAUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110
Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
More informationBCR401R LED Driver Features Applications General Description
LED Driver Features LED drive current of ma Output current adjustable up to 60mA with external resistor Supply voltage up to 8V Easy paralleling of drivers to increase current Low voltage overhead of.v
More informationOPTIREG Linear TLE4262
Features Output voltage tolerance ±2% 2 ma output capability Low-drop voltage ery low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof Adjustable reset
More informationPNP 5 GHz wideband transistor IMPORTANT NOTICE. use
Rev. 3 28 September 27 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
More informationBFP720FESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.
Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-16 RF & Protection Devices Edition 2012-10-16 Published by Infineon Technologies AG 81726 Munich, Germany 2013
More informationBGU Product profile. SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass. 1.1 General description. 1.2 Features and benefits
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 14 May 2013 Product data sheet 1. Product profile 1.1 General description The is a Low Noise Amplifier (LNA) for GNSS receiver
More informationESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package
HiRel K-Band GaAs Super Low Noise HEMT HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFR520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFR File under Discrete Semiconductors, SC4 September 99 BFR FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent
More informationBGU General description. 2. Features and benefits. SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS Rev. 3 18 January 2017 Product data sheet 1. General description 2. Features and benefits The is, also known as the GPS1301M, an ultra
More informationTRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L
IGBT TRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and Electrical
More information