BGB420, Aug BGB420. Active Biased Transistor MMIC. Wireless Silicon Discretes. Never stop thinking.
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1 , Aug BGB420 Active Biased Transistor MMIC Wireless Silicon Discretes Never stop thinking.
2 Edition Published by Infineon Technologies AG, St.-Martin-Strasse 53, D München Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
3 Data sheet Revision History: Previous Version: Page Subjects (major changes since last revision) 7 S-Parameter table added 8 Figure Output Compression Point added 9 SPICE Model added For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
4 Active Biased Transistor BGB420 Features For high gain low noise amplifiers Ideal for wideband applications, cellular telephones, cordless telephones, SAT-TV and high frequency oscillators G ma =17.5dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: V SIEGET -25 technology Bias Bias,4 C,3 Description SIEGET -25 NPN Transistor with integrated biasing for high gain low noise figure applications. I C can be controlled using I Bias according to I C =10*I Bias. B,1 E,2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking Chip BGB420 SOT343 MBs T0514 Data sheet
5 Maximum Ratings Parameter Symbol Value Unit Maximum collector-emitter voltage V CE 3.5 V Maximum collector current I C 30 ma Maximum bias current I Bias 3 ma Maximum emitter-base voltage V EB 1.5 V Maximum base current I B 0.7 ma Total power dissipation, T S < 107 C 1) P tot 120 mw Junction temperature T j 150 C Operating temperature range T OP C Storage temperature range T STG C Thermal resistance: junction-soldering point R th JS <270 K/W Notes: For detailed symbol description refer to figure 1. 1) T S is measured on the emitter lead at the soldering point to the PCB I Bias I C Bias,4 C,3 Bias V CE B,1 E,2 I B V EB Fig. 1: Symbol definition Data sheet
6 V D I D R Bias Bias-T RF Out I Bias I C Bias,4 C,3 Bias RF In N.C. Bias-T B,1 E,2 Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter Electrical Characteristics at T A =25 C (measured in test circuit specified in fig. 2, min./max. values verified by random sampling) P OIP Parameter Symbol min. typ. max. Unit Maximum available power gain V D =2V, I c =20mA, f=1.8ghz G MA db Insertion power gain f=0.9ghz S db V D =2V, I c =20mA f=1.8ghz 16 Insertion loss f=0.9ghz IL 21 db V D =2V, I c =0mA f=1.8ghz 15 Noise figure (Z S =50Ω) f=0.9ghz F 50Ω db V D =2V, I c =5mA f=1.8ghz Output power at 1dB gain compression V D =2V, I c =20mA, f=1.8ghz Z L =Z LOPT 12 dbm Z L =50Ω -1dB 7 10 Output third order intercept point V D =2V, I c =20mA, f=1.8ghz Z L/S =Z L/SOPT 22 dbm Z L/S =50Ω Collector-base capacitance V CB =2V, f=1mhz C CB 0.16 pf Current Ratio I C /I Bias I Bias =0.5mA, V D =3V CR Data sheet
7 S-Parameter V D =2V, I C =20mA (see Electrical Characteristics for conditions) Frequency S11 S11 S21 S21 S12 S12 S22 S22 [GHz] Mag Ang Mag Ang Mag Ang Mag Ang Device Current I D = f(v D, R Bias ) Ω Ω 20 I D [ma] kΩ kΩ 5 4.7kΩ 8.2kΩ V D [V] Data sheet
8 Power Gain S 21 2, Gma, Gms=f(f) V D = 3V, I C =20mA Power Gain Gma, Gms=f(I C ) V D = 3V S 21 2, Gma, Gms [db] Gma/Gms S 21 2 Gma, Gms [db] GHz 0.9GHz 1.9GHz 2.5GHz Frequency [GHz] I C [ma] Matching S 11, S 22 =f(f) V D = 3V, I C =20mA 0 Output Compression Point P = f(i ) 1dB C V = 3V, f = 1.8GHz, Z = 50Ω D L S S 11, S 22 [db] P 1dB [dbm] S Frequency [GHz] I C [ma] Data sheet
9 SPICE Model BGB420-Chip 4 3 Q1 T502 Q2 R2 R1 Q1 Q2 T502 (area factor: 0.1) R1 2.7kΩ R2 27kΩ 2 1 Transistor Chip Data T502 (Berkley-SPICE 2G.6 Syntax).MODEL T502 NPN( + IS = e-16 BF = NF = VAF = IKF = ISE = e-14 NE = BR = NR = VAR = IKR = ISC = e-17 + NC = RB = IRB = RBM = RE = RC = CJE = e-15 VJE = MJE = TF = e-12 XTF = VTF = ITF = PTF = 0 CJC = e-13 VJC = MJC = XCJC = 0.3 TR = e-09 CJS= 0 + VJS = 0.75 MJS = 0 XTB = 0 EG = XTI = 3 FC = ) Package Equivalent Circuit B L BO C 2 C 1 L 1 C 3 L BI L BGB420 CI L CO 1 3 Chip C BE C CB 4 2 L EI L EO C CE L 2 Bias C L BI 0.36 nh L B0 0.4 nh L EI 0.3 nh L EO 0.15 nh L CI 0.36 nh L CO 0.4 nh L nh L nh C BE 95 ff C CB 6 ff C CE 132 ff C 1 28 ff C 2 88 ff C 3 8 ff E Valid up to 3GHz Data sheet
10 Typical Application V Bias DC Bypass R Bias I Bias 4 L I C 3 C Voltage Supply RF Out Fig. 3: Typical application circuit. This proposal demonstrates how to use the BGB420 as a Self-Biased Transistor. As for a discrete Transistor matching circuits have to be applied. A good starting point for various applications are the Application Notes provided for the BFP420. BGB I C =10*I Bias C RF In Package Outline 4 2 ± ±0.1 3 B 0.20 M B +0.2 acc. to DIN ± ± max 1.25 ±0.1 A M A GPS05605 Data sheet
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BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9S: Two internally isolated transistors with good matching in one
NPN wideband silicon germanium RF transistor
Rev. 1 22 April 211 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Product description NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term
Data Sheet, Rev.3.2, Oct BGM781N11. GPS Front-End Module. RF & Protection Devices
Data Sheet, Rev.3.2, Oct. 2010 BGM781N11 GPS Front-End Module RF & Protection Devices Edition 2010-10-28 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All
SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at collector
TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general
5-V Low-Drop Voltage Regulator TLE Bipolar IC
5- Low-Drop oltage Regulator TLE 4267 Bipolar IC Features Output voltage tolerance ± 2 % 4 ma output current capability Low-drop voltage ery low standby current consumption Input voltage up to 4 Overvoltage
NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
BFR52 Rev. 3 1 September 24 Product data sheet 1. Product profile 1.1 General description The BFR52 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain
Type Marking Pin Configuration Package BCR405U L5s 1 = GND 2;3;5 = I out 4 = V S 6 = R ext SC74
LED Driver Supplies stable bias current even at low battery voltage Ideal for stabilizing bias current of LEDs Negative temperature coefficient protects 4 5 6 3 LEDs against thermal overload Suitable for
BGA855N6 BGA855N6. Low Noise Amplifier for Lower L-Band GNSS Applications GND. Features
Features Operating frequencies: 1164-1300 MHz Insertion power gain: 17.8dB Low noise figure: 0.60 db High linearity performance IIP3: 0 dbm Low current consumption: 4.8 ma Ultra small TSNP-6-10 leadless
BCR BCR183 BCR183W BCR183S BCR183U. Type Marking Pin Configuration Package BCR183 BCR183S BCR183U SOT23 SOT363 SC74 SOT323.
BCR8... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω) BCR8S / U: Two internally isolated transistors with good matching
Type Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) Pbfree (RoHS compliant) package Qualified according AEC
Data Sheet, V 1.1, Oct TLE4906H TLE4906L. High Precision Hall-Effect Switch. Sensors
Data Sheet, V 1.1, Oct. 2005 TLE4906H High Precision Hall-Effect Switch Sensors Edition 2005-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies
NPN wideband silicon RF transistor
Rev. 2 11 January 211 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage
TLE4976-1K / TLE4976L
February 2009 / High Precision Hall Effect Switch with Current Interface Data Sheet Rev. 2.0 Sense & Control Edition 2009-02-12 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon
BAS70.../BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04W BAS70-04S BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W
BAS7.../BAS7W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing BAS7-S: For orientation in reel see package information
Application Note No. 099
Application Note, Rev. 2.0, Feb. 0 Application Note No. 099 A discrete based 315 MHz Oscillator Solution for Remote Keyless Entry System using BFR182 RF Bipolar Transistor RF & Protection Devices Edition
techniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
NPN wideband silicon RF transistor
Rev. 1 15 December 21 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.