BFP520. NPN Silicon RF Transistor

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1 NPN Silicon RF Transistor For highest gain low noise amplifier at. GHz and ma / V Outstanding Gms =.5 Noise Figure F =.95 For oscillators up to 5 GHz Transition frequency f T = 5 GHz Gold metallisation for high reliability SIEGET 5 Line ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package APs =B =E =C =E SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage T A > C T A C V CEO V.5. Collectoremitter voltage V CES Collectorbase voltage V CBO Emitterbase voltage V EBO Collector current I C ma Base current I B Total power dissipation ) P tot mw T S 5 C Junction temperature T j 5 C Ambient temperature T A Storage temperature T stg Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 5 K/W T S is measured on the collector lead at the soldering point to pcb For calculation of RthJA please refer to Application Note Thermal Resistance 5

2 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO.5.5 V I C = ma, I B = Collectoremitter cutoff current I CES µa V CE = V, V BE = Collectorbase cutoff current I CBO na V CB = 5 V, I E = Emitterbase cutoff current I EBO 5 µa V EB = V, I C = DC current gain I C = ma, V CE = V, pulse measured h FE 7 7 5

3 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit AC Characteristics (verified by random sampling) Transition frequency I C = ma, V CE = V, f = GHz Collectorbase capacitance V CB = V, f = MHz, V BE =, emitter grounded Collector emitter capacitance V CE = V, f = MHz, V BE =, base grounded Emitterbase capacitance V EB = V, f = MHz, V CB =, collector grounded Noise figure I C = ma, V CE = V, Z S = Z Sopt, f =. GHz Power gain, maximum stable ) I C = ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f =. GHz min. typ. max. f T 5 GHz C cb.6. pf C ce. C eb F.95 G ms.5 Insertion power gain V CE = V, I C = ma, f =. GHz, Z S = Z L = 5 Ω S Third order intercept point at output IP m V CE = V, I C = ma, f =. GHz, Z S = Z Sopt, Z L = Z Lopt V CE = V, I C = 7 ma, f =. GHz, 5 Z S = Z Sopt, Z L = Z Lopt 7 Compression point P I C = ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f =. GHz I C = 7 ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f =. GHz 5 G ms = S / S 5

4 SPICE Parameter (GummelPoon Model, BerkleySPICE G.6 Syntax): Transitor Chip Data: IS = 5 aa VAF = 5 V NE = VAR = V NC = RBM = 7.5 Ω CJE = 5 ff TF =.7 ps ITF =.7 A VJC =.66 V TR = 5 ns MJS =. XTI = BF = 5 IKF =. A BR =.5 IKR =. A RB = Ω RE =.6 VJE =.95 V XTF = PTF = 5 deg MJC =.6 CJS = ff XTB = FC = NF = ISE = 5 fa NR = ISC = fa IRB = A RC = 7.6 Ω MJE = VTF = 5 V CJC = 9 ff XCJC = VJS =.75 V EG =. ev TNOM 9 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil und Satellitentechnik (IMST) Package Equivalent Circuit: L BI =.7 nh L BO = nh L EI =. nh L EO =.5 nh L CI = 6 nh L CO = nh C BE = 6 ff C CB = 6.9 ff C CE = ff Valid up to 6GHz The SOT package has two emitter leads. To avoid high complexity to the package equivalent circuit both leads are combined in one electrical connection For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CDROM or see Internet: http// 5

5 Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) mw 9 Ptot RthJS K/W D = 6 C 5 T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) s Collectorbase capacitance C cb = ƒ(v CB ) f = MHz tp. PtotMAX/PtotDC D = CCB pf s t p.5 V V CB 5 5

6 Transition frequency f T = ƒ(i C ) f = GHz V CE = parameter in V Power gain G ma, G ms, S = ƒ (f) V CE = V, I C = ma 5 GHz 6 6 G ms ft G S ² Gma ma 5 I C Power gain G ma, G ms = ƒ (I C ) V CE = V f = parameter in GHz GHz 6 f Power gain G ma, G ms = ƒ (V CE ) I C = ma f = parameter in GHz G G ma 5 I C.5 V V CE 5 6

7 Noise figure F = ƒ(i C ) V CE = V, Z S = Z Sopt Noise figure F = ƒ(i C ) V CE = V, f =. GHz F F.5.5 f = 6 GHz f = 5 GHz f = GHz f = GHz f =. GHz f =. GHz f =.9 GHz Zs = 5Ohm Zs = Zsopt ma I C Noise figure F = ƒ(f) V CE = V, Z S = Z Sopt ma I C Source impedance for min. noise figure vs. frequency V CE = V, I C = ma / 5 ma +j5 +j5 +j F +j GHz 5GHz GHz.GHz.9GHz.5 6GHz 5 5 GHz j ma 5mA IC = 5 ma IC = ma j5 j j5 5 GHz 6.5 f 5 7

8 Package SOT Package Outline ±... MAX...9 ±. A x. M ±.. MIN. Foot Print.6 Marking Layout Manufacturer Date code (Year/Month) 5, June Pin Type code Example BGA Standard Packing Reel ø mm =. Pieces/Reel Reel ø mm =. Pieces/Reel M A ±..5.9 Pin.5. 5

9 Published by Infineon Technologies AG, St.MartinStrasse 5, 669 München Infineon Technologies AG 5. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 5

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