For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications
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1 Features Maximum collector-emitter voltage V CE0 = 15 V Maximum collector current I C = 25 ma Noise figure NF = 3.5 db 3rd order output intercept point OIP 3 = 21.5 dbm 1 db output compression point P -1dB = 10 dbm Transition frequency f T = 1.4 GHz Maximum total power dissipation P tot = 280 mw Package: SOT23 Pb-free (RoHS compliant) package Potential Applications For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications Device Information ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type / Ordering code Marking Pin Configuration Package BFS17P / BFS17PE6327HTSA1 MCs 1=B 2=E 3=C SOT23 Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.1
2 Table of contents Table of contents Features Potential Applications Device Information Table of contents Maximum Ratings Thermal Resistance Electrical Characteristics Typical characteristics diagrams Package information SOT23 package Revision History Trademarks Datasheet 2 Revision 1.1
3 Maximum Ratings 1 Maximum Ratings Table 1 Maximum Rating at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note or Test Condition Collector-emitter voltage V CEO 15 V Collector-base voltage V CBO 25 Emitter-base voltage V EBO 2.5 Collector current I C 25 ma Peak collector current I CM 50 Total power dissipation 1) P tot 280 mw T S 95 C Junction temperature T j 150 C Ambient temperature T A Storage temperature T Stg Thermal Resistance Table 2 Thermal resistance Parameter Symbol Values Unit Note or Test Condition Junction - soldering point R thjs 195 K/W Note: For calculation of R thja please refer to Application Note AN077 (Thermal Resistance Calculation) 1 T S is measured on the collector lead at the soldering point to the pcb Datasheet 3 Revision 1.1
4 Electrical Characteristics 3 Electrical Characteristics Table 3 DC Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note or Test Condition Collector-emitter breakdown voltage Min. Typ. Max. V (BR)CEO 15 V I C = 1 ma, = 0 Collector-base cutoff current I CBO 0.05 µa V CB = 10 V, I E = 0 10 V CB = 25 V, I E = 0 Emitter-base cutoff current I EBO 100 µa V EB = 2.5 V, I C = 0 DC current gain h FE I C = 2 ma, V CE = 1 V pulse measured Collector-emitter saturation voltage I C = 25 ma, V CE = 1 V pulse measured V CEsat V I C = 10 ma, = 1 ma Table 4 AC Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Transition frequency f T GHz I C = 2 ma, V CE = 5 V, f = 200 MHz I C = 25 ma, V CE = 5 V, f = 200 MHz Collector-base capacitance C cb pf V CB = 5 V, f = 1 MHz, V BE = 0, emitter grounded Collector emitter capacitance C ce 0.27 pf V CE = 5 V, f = 1 MHz, V BE = 0, base grounded Emitter-base capacitance C eb pf V EB = 0.5 V, f = 1 MHz, V CB = 0, collector grounded Minimum noise figure NF min db I C = 2 ma, V CE = 5 V, Z S = 50Ω, f = 800 MHz Transducer gain S 21e 2 13 db I C = 20 ma, V CE = 5 V, Z S = Z L = 50Ω, f = 500 MHz Third order intercept point at output OIP dbm V CE = 5 V, I C = 20 ma, f = 800 MHz, Z S = Z Sopt, Z L = Z Lopt 1dB compression point P -1dB 10 dbm I C = 20 ma, V CE = 5 V, Z S = Z L = 50Ω, f = 800 MHz Datasheet 4 Revision 1.1
5 Typical characteristics diagrams 4 Typical characteristics diagrams Figure 1 Total Power Dissipation 10 3 R thjs [K/W] D = 0 D =.005 D =.01 D =.02 D =.05 D =.1 D =.2 D = t p [sec] Figure 2 Permissible Pulse Load R thjs = f (t p ) Datasheet 5 Revision 1.1
6 Typical characteristics diagrams 100 P tot max / P tot DC [W] 10 D = 0 D =.005 D =.01 D =.02 D =.05 D =.1 D =.2 D = t p [sec] Figure 3 Permissible Pulse Load P totmax / P totdc = f (t p ) P tot = 280mW =429µA =382µA =336µA =289µA I C [ma] V CE [V] =243µA =196µA =150µA =103µA =57µA =10µA Figure 4 Collector current I C = f(v CE ), = parameter Datasheet 6 Revision 1.1
7 Typical characteristics diagrams hfe I C [ma] Figure 5 Current gain h FE = f(i C ), V CE = 8 V C CB C EB C [pf] V CB ; V EB [V] Figure 6 Collector-Base C CB =f(v CB ); Emitter-Base Capacitance C EB =f(v EB ) Datasheet 7 Revision 1.1
8 Typical characteristics diagrams ft [GHz] V 5V 3V 2V V IC [ma] Figure 7 Transition frequency f T = f(i C ), V CE = parameter Datasheet 8 Revision 1.1
9 Package information 5 Package information 5.1 SOT23 package ) M B C 2.9 ± B C M A 2.4 ± MIN. 1± MAX ±0.1 A 1) Lead width can be 0.6 max. in dambar area SOT23-PO V08 Figure 8 SOT23 package outline Soldering Type: Reflow Soldering Soldering Type: Wave Soldering SOT23-FPR V08 Transport direction SOT23-FPW V MIN MIN. Figure 9 SOT23 foot frint EH s Manufacturer 2005, June Date code (YM) Pin 1 BCW66 Type code Figure 10 SOT23 marking layout (example) Pin SOT23-TP V02 Figure 11 SOT23 tape and reel Datasheet 9 Revision 1.1
10 Revision History Revision History Major changes since previous revision Revision History Reference Description All pages : Conversion to new document template R thjs : Update of value Datasheet 10 Revision 1.1
11 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG Munich, Germany 2017 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? erratum@infineon.com Document reference IFX-kwg IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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