Type Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3

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1 Linear Low Noise Silicon Bipolar RF Transistor High linearity low noise driver amplifier Output compression point 9.5 GHz Ideal for oscillators up to 3.5 GHz Low noise figure. at.8 GHz Collector design supports 5 V supply voltage Pbfree (RoHS compliant) and halogenfree thin small flat package with visible leads Qualification report according to AECQ available 3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR38F FCs = B = E 3 = C TSFP3 Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Collectoremitter voltage V CEO 6 V Collectoremitter voltage V CES 5 Collectorbase voltage V CBO 5 Emitterbase voltage V EBO Collector current I C 8 ma Base current I B 4 Total power dissipation ) T S 95 C P tot 38 mw Junction temperature T J 5 C Storage temperature T Stg Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 45 K/W T S is measured on the collector lead at the soldering point to the pcb For the definition of R thjs please refer to Application Note AN (Thermal Resistance Calculation) 36

2 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B = V (BR)CEO 6 9 V Collectoremitter cutoff current V CE = 5 V, V BE = V CE = 5 V, V BE = Collectorbase cutoff current V CB = 5 V, I E = Emitterbase cutoff current V EB = V, I C = DC current gain I C = 4 ma, V CE = 3 V, pulse measured I CES na 3 I CBO 3 I EBO 5 h FE

3 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 4 GHz I C = 4 ma, V CE = 3 V, f = GHz Collectorbase capacitance V CB = 5 V, f = MHz, V BE =, emitter grounded C cb.5. pf Collector emitter capacitance V CE = 5 V, f = MHz, V BE =, base grounded Emitterbase capacitance V EB =.5 V, f = MHz, V CB =, collector grounded Minimum noise figure I C = 8 ma, V CE = 3 V, Z S = Z Sopt, f =.8 GHz I C = 8 ma, V CE = 3 V, Z S = Z Sopt, f = 3 GHz Power gain, maximum available ) I C = 4 ma, V CE = 3 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz I C = 4 ma, V CE = 3 V, Z S = Z Sopt, Z L = Z Lopt, f = 3 GHz C ce. C eb NF min G ma Transducer gain S e I C = 4 ma, V CE = 3 V, Z S = Z L = 5Ω, f =.8 GHz f = 3 GHz Third order intercept point at output ) V CE = 3 V, I C = 4 ma, Z S =Z L =5 Ω, f =.8 GHz compression point at output I C = 4 ma, V CE = 3V, f =.8 GHz Z S =Z L =5 Ω Z S = Z Sopt, Z L = Z Lopt IP3 9 m P 9.5 G ma = S e / S e (k(k²) / ) IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 5Ω from. MHz to 6 GHz 3 36

4 Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 4 3 mw Ptot 3 5 RthJS K/W C 5 T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) D= s Collectorbase capacitance C cb = ƒ(v CB ) f = MHz t p.6 pf Ptotmax/PtotDC D = Ccb s V 6 t p V CB 4 36

5 Third order Intercept Point IP 3 =ƒ(i C ) (Output, Z S =Z L =5Ω) V CE = parameter, f =.8GHz Third order Intercept Point IP 3 = ƒ(i C ) (Output, Z S = Z L = 5 Ω ) V CE = parameter, f = 9 MHz 3 m IP V 3V V V ma 9 I C Transition frequency f T = ƒ(i C ) f = GHz V CE = parameter Power gain G ma, G ms = ƒ(i C ) f =.8GHz V CE = parameter 6 GHz 4 5V 5 5V ft 3 3V V G 3 3V V 9 8 V.V V V ma I C ma I C 5 36

6 Power Gain G ma, G ms = ƒ(f) V CE = parameter Power Gain S ² = ƒ(f) V CE = parameter 45 4 Ic = 4mA Ic = 4mA 35 3 G 3 5 5V V V.V G 5 5V V V.V GHz 4.5 f Power Gain G ma, G ms = ƒ(v CE ): S ² = ƒ(v CE ): f = parameter GHz 4.5 f Power gain G ma, G ms = ƒ(i C ) V CE = 3V f = parameter Ic = 4mA.9GHz GHz.9GHz G 6 5 G GHz 3.8GHz.8GHz 9.4GHz 3GHz 9 8 4GHz V 8 V CE ma I C 6 36

7 Minimum noise figure NF min = ƒ(i C ) V CE = 3V, Z S = Z Sopt Noise figure F = ƒ(i C ) V CE = 3V, f =.8 GHz F [] F [].5 f = 4GHz f = 3GHz f =.4GHz.5 Z S = 5Ω Z S = Z Sopt f =.8GHz.5 f =.9GHz I c [ma] Minimum noise figure NF min = ƒ(f) V CE = 3V, Z S = Z Sopt I c [ma] Source impedance for min. noise figure vs. frequency V CE = 3 V, I C = 8.mA/4.mA 36

8 SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the Sparameters (including noise parameters) please refer to our internet website Please consult our website and download the latest versions before actually starting your design. You find the BFR38F SPICE GP model in the internet in MWO and ADSformat, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to GHz using typical devices. The BFR38F SPICE GP model reflects the typical DC and RFperformance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all Sparameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 8 36

9 Package TSFP3 BFR38F 9 36

10 Edition 96 Published by Infineon Technologies AG 86 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (< Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 36